Improved Exciton Dissociation at Semiconducting Polymer:ZnO Donor:Acceptor Interfaces via Nitrogen Doping of ZnO

Harmonizing the cyano-group and Na to enhance selective photocatalytic O2 activation on carbon nitride for refractory pollutant degradation

Manipulating exciton dissociation and charge-carrier transfer processes to selectively generate free radicals of more robust photocatalytic oxidation capacity for mineralizing refractory pollutants remains challenging. Herein, we propose a strategy by simultaneously introducing the cyano-group and Na into graphitic carbon nitride (CN) to obtain CN-Cy-Na, which makes the charge-carrier transfer pathways the dominant process and consequently achieves the selective generation of free radicals. Briefly, the cyano-group intensifies the local charge density of CN, offering a potential well to attract the hole of exciton, which accelerates the exciton dissociation. Meanwhile, the separated electron transfers efficiently under the robust built-in electric field induced by the cyano-group and Na, and eventually accumulates in the heptazine ring of CN for the following O2 reduction due to the reinforced electron sink effect caused by Na. As a result, CN-Cy-Na exhibits 4.42 mmol L-1 h-1 productivity with 97.6% selectivity for free radicals and achieves 82.1% total organic carbon removal efficiency in the tetracycline photodegradation within 6 h. Additionally, CN-Cy-Na also shows outstanding photodegradation efficiency of refractory pollutants, including antibiotics, pesticide plastic additives, and dyes. This work presents an innovative approach to manipulating the exciton effect and enhancing charge-carrier mobility within two-dimensional photocatalysts, opening an avenue for precise control of free radical generation.

All-Oxide Transparent Photodetector Array for Ultrafast Response through Self-Powered Excitonic Photovoltage Operation

Can photodetectors be transparent and operate in self-powered mode? Is it possible to achieve invisible electronics, independent of the external power supply system, for on-site applications? Here, a ZnO/NiO heterojunction-based high-functional transparent ultraviolet (UV) photodetector operating in the self-powered photovoltaic mode with outstanding responsivity and detectivity values of 6.9 A W-1 and 8.0 × 1012 Jones, respectively, is reported. The highest IUV /Idark value of 8.9 × 104 is attained at a wavelength of 385 nm, together with a very small dark current value of 9.15 × 10-12 A. A large-scale sputtering method is adopted to deposit the heterostructure of n-ZnO and p-NiO sequentially. This deposition instinctively forms an abrupt junction, resulting in a high-quality heterojunction device. Moreover, developing a ZnO/NiO-heterojunction-based 4 × 5 matrix array with an output photovoltage of 4.5 V is preferred for integrating photodetectors into sensing and imaging systems. This transparent UV photodetector exhibits the fastest photo-response time (83 ns) reported for array configurations, which is achieved using an exciton-induced photovoltage based on a neutral donor-bound exciton. Overall, this study provides a simple method for achieving a high-performance large-scale transparent UV photodetector with a self-powered array configuration.

Tuning the band gap and carrier concentration of titania films grown by spatial atomic layer deposition: a precursor comparison

Spatial atomic layer deposition retains the advantages of conventional atomic layer deposition: conformal, pinhole-free films and excellent control over thickness. Additionally, it allows higher deposition rates and is well-adapted to depositing metal oxide nanofilms for photovoltaic cells and other devices. This study compares the morphological, electrical and optical properties of titania thin films deposited by spatial atomic layer deposition from titanium isopropoxide (TTIP) and titanium tetrachloride (TiCl₄) over the temperature range 100-300 °C, using the oxidant H₂O. Amorphous films were deposited at temperatures as low as 100 °C from both precursors: the approach is suitable for applying films to temperature-sensitive devices. An amorphous-to-crystalline transition temperature was observed for both precursors resulting in surface roughening, and agglomerates for TiCl₄. Both precursors formed conformal anatase films at 300 °C, with growth rates of 0.233 and 0.153 nm s^-1 for TiCl₄ and TTIP. A drawback of TiCl₄ use is the HCl by-product, which was blamed for agglomeration in the films. Cl contamination was the likely cause of band gap narrowing and higher defect densities compared to TTIP-grown films. The carrier concentration of the nanofilms was found to increase with deposition temperature. The films were tested in hybrid bilayer solar cells to demonstrate their appropriateness for photovoltaic devices.

Fluorescence Invigoration in Carbon-Incorporated Zinc Oxide Nanowires from Passage of Field Emission Electrons

We demonstrate that carbon incorporated Zinc Oxide (C-ZnO) nanowires (NWs) exhibit remarkable improvement in the extent and quality of fluorescence emission after they are utilized as an electron source in a field emission experiment. After the passage of field emission electrons, the intensity of the fluorescence emitted from these NWs in the visible light range exhibits a 2.5 to 8 fold enhancement. The intrinsic exciton peak of the ZnO also becomes heightened, along with the crystalline quality of the NWs showing marked improvement. This invigoration of fluorescence across the entire fluorescence spectrum is attributed to concurrent removal of oxygen and carbon atoms in C-ZnO NWs due to electro-migration of atoms and joule heating during the field emission process. Applications based on ZnO NWs emission from excitonic emissions or visible wavelength emissions or both can benefit from this straightforward method of defect engineering.

Identifying the acceptor state in NiO hole collection layers: direct observation of exciton dissociation and interfacial hole transfer across a Fe2O3/NiO heterojunction

NiO is widely utilized as a hole transport layer in solar energy devices where light absorption in a photoactive layer is followed by charge separation and hole injection into a NiO collection layer. Due to the complex electronic structure of the hybridized valence band in NiO, the chemical nature of the hole acceptor state has remained an open question, despite the fact that hole localization in this material significantly influences device efficiency. To comment on this, we present results of ultrafast charge carrier dynamics in a NiO based model heterojunction (Fe2O3/NiO) using extreme ultraviolet reflection-absorption (XUV-RA) spectroscopy. Element specific XUV-RA spectroscopy demonstrates the formation of transient Ni3+ within 10 ps following selective photoexcitation of the underlying Fe2O3 substrate. This indicates that hole transfer in this system occurs to NiO valence band states composed of significant Ni 3d character. Additionally, we show that this hole injection process proceeds via a two-step sequential mechanism where fast, field-driven exciton dissociation occurs in Fe2O3 in 680 ± 60 fs, followed by subsequent hole injection to NiO in 9.2 ± 2.9 ps. These results reveal the chemical nature of the hole acceptor state in widely used NiO hole transport layers and provides a direct observation of exciton dissociation and interfacial hole transfer in this model system.

Role of the Metal-Oxide Work Function on Photocurrent Generation in Hybrid Solar Cells

ZnO is a widely used metal-oxide semiconductor for photovoltaic application. In solar cell heterostructures they not only serve as a charge selective contact, but also act as electron acceptor. Although ZnO offers a suitable interface for exciton dissociation, charge separation efficiencies have stayed rather poor and conceptual differences to organic acceptors are rarely investigated. In this work, we employ Sn doping to ZnO nanowires in order to understand the role of defect and surface states in the charge separation process. Upon doping we are able to modify the metal-oxide work function and we show its direct correlation with the charge separation efficiency. For this purpose, we use the polymer poly(3-hexylthiophene) as donor and the squaraine dye SQ2 as interlayer. Interestingly, neither mobilities nor defects are prime performance limiting factor, but rather the density of available states around the conduction band is of crucial importance for hybrid interfaces. This work highlights crucial aspects to improve the charge generation process of metal-oxide based solar cells and reveals new strategies to improve the power conversion efficiency of hybrid solar cells.

Passivating ZnO Surface States by C60 Pyrrolidine Tris-Acid for Hybrid Solar Cells Based on Poly(3-hexylthiophene)/ZnO Nanorod Arrays

Construction of ordered electron acceptors is a feasible way to solve the issue of phase separation in polymer solar cells by using vertically-aligned ZnO nanorod arrays (NRAs). However, the inert charge transfer between conducting polymer and ZnO limits the performance enhancement of this type of hybrid solar cells. In this work, a fullerene derivative named C60 pyrrolidine tris-acid is used to modify the interface of ZnO/poly(3-hexylthiophene) (P3HT). Results indicate that the C60 modification passivates the surface defects of ZnO and improves its intrinsic fluorescence. The quenching efficiency of P3HT photoluminescence is enhanced upon C60 functionalization, suggesting a more efficient charge transfer occurs across the modified P3HT/ZnO interface. Furthermore, the fullerene modified hybrid solar cell based on P3HT/ZnO NRAs displays substantially-enhanced performance as compared to the unmodified one and the devices with other modifiers, which is contributed to retarded recombination and enhanced exciton separation as evidenced by electrochemical impedance spectra. Therefore, fullerene passivation is a promising method to ameliorate the connection between conjugated polymers and metal oxides, and is applicable in diverse areas, such as solar cells, transistors, and light-emitting dioxides.

Rapid open-air deposition of uniform, nanoscale, functional coatings on nanorod arrays

Coating of high-aspect-ratio nanostructures has previously been achieved using batch processes poorly suited for high-throughput manufacturing. It is demonstrated that uniform, nanoscale coatings can be rapidly deposited on zinc oxide nanorod arrays in open-air using an atmospheric pressure spatial deposition system. The morphology of the metal oxide coatings is examined and good electrical contact with the underlying nanorods is observed. The functionality of the coatings is demonstrated in colloidal quantum dot and hybrid solar cells.

Effect of Injection Layer Sub-Bandgap States on Electron Injection in Organic Light-Emitting Diodes

It is generally considered that the injection of charges into an active layer of an organic light-emitting diode (OLED) is solely determined by the energetic injection barrier formed at the device interfaces. Here, we demonstrate that the density of surface states of the electron-injecting ZnO layer has a profound effect on both the charge injection and the overall performance of the OLED device. Introducing a dopant into ZnO reduces both the energy depth and density of surface states without altering the position of the energy levels-thus, the magnitude of the injection barrier formed at the organic/ZnO interface remains unchanged. Changes observed in the density of surface states result in an improved electron injection and enhanced luminescence of the device. We implemented a numerical simulation, modeling the effects of energetics and the density of surface states on the electron injection, demonstrating that both contributions should be considered when choosing the appropriate injection layer.

Surface Structure Modification of ZnO and the Impact on Electronic Properties

Zinc oxide (ZnO) is a widely utilized, versatile material implemented in a diverse range of technological applications, particularly in optoelectronic devices, where its inherent transparency, tunable electronic properties, and accessible nanostructures can be combined to confer superior device properties. ZnO is a complex material with a rich and intricate defect chemistry, and its properties can be extremely sensitive to processing methods and conditions; consequently, surface modification of ZnO using both inorganic and organic species has been explored to control and regulate its surface properties, particularly at heterointerfaces in electronic devices. Here, the properties of ZnO are described in detail, particularly its surface chemistry, along with the role of defects in governing its electronic properties, and methods employed to modulate the behavior of as-grown ZnO. An outline is also given on how the native and modified oxide interact with molecular materials. To illustrate the diverse range of surface modification methods and their subsequent influence on electronic properties, a comprehensive review of the modification of ZnO surfaces at molecular interfaces in hybrid photovoltaic (hPV) and organic photovoltaic (OPV) devices is presented. This is a case study rather than a progress report, aiming to highlight the progress made toward controlling and altering the surface properties of ZnO, and to bring attention to the ways in which this may be achieved by using various interfacial modifiers (IMs).

Comparison of the Impact of Zinc Vacancies on Charge Separation and Charge Transfer at ZnO/Sexithienyl and ZnO/Fullerene Interfaces

The impact of surface zinc vacancies on charge transfer and charge separation at donor/ZnO and acceptor/ZnO interfaces is identified via density functional theory calculations. The results show their effect to be related to the stronger internal electric field present near these vacancies. Thus, such surface defects can have a significant negative impact on the performance of hybrid solar cells using ZnO as electron acceptors.

Surface Modification of ZnO Layers via Hydrogen Plasma Treatment for Efficient Inverted Polymer Solar Cells

Modifications of the ZnO electron extraction layer with low-pressure H plasma treatment increased the efficiency of inverted polymer solar cells (PSCs) based on four different photoactive blends, namely, poly(3-hexylthiophene):[6,6]-phenyl C71 butyric acid methyl ester (P3HT:PC71BM), P3HT:1',1″,4',4″-tetrahydro-di[1,4]methanonaphthaleno-[5,6]ullerene-C60 (P3HT:IC60BA), poly[(9-(1-octylnonyl)-9H-carbazole-2,7-diyl)-2,5-thiophenediyl-2,1,3-benzothiadiazole-4,7-diyl-2,5-thiophenediyl]:PC71BM (PCDTBT:PC71BM), and (poly[[4,8-bis[(2-ethylhexyl)oxy]benzo[1,2-b:4,5-b']dithiophene-2,6-diyl][3-fluoro-2-(2-ethylhexy)carbonyl]thieno[3,4-b]thiophenediyl]]):PC71BM (PTB7:PC71BM), irrespective of the donor:acceptor combination in the photoactive blend. The drastic improvement in device efficiency is dominantly attributable to the reduction in the work function of ZnO followed by a decreased energy barrier for electron extraction from fullerene acceptor. In addition, reduced recombination losses and improved nanomorphology of the photoactive blend in the devices with the H plasma treated ZnO layer were observed, whereas exciton dissociation also improved with hydrogen treatment. As a result, the inverted PSC consisting of the P3HT:PC71BM blend exhibited a high power conversion efficiency (PCE) of 4.4%, the one consisting of the P3HT:IC60BA blend exhibited a PCE of 6.6%, and our champion devices with the PCDTBT:PC71BM and PTB7:PC71BM blends reached high PCEs of 7.4 and 8.0%, respectively.

Inverted polymer light-emitting devices using a conjugated starburst macromolecule as an interlayer

We have demonstrated efficient inverted polymer light-emitting diodes with an alcohol-soluble conjugated starburst macromolecule TrOH as the interlayer.

Broadband photoresponse promoted by interfacial electron transfer in diketopyrrolopyrrole-based compound/ZnO hybrid nanocomposites

High photoresponse covering the UV-vis region was realized in the TTDPP/ZnO hybrid system, which is attributed to the efficient cascade electron transfer process.

Influence of an Inorganic Interlayer on Exciton Separation in Hybrid Solar Cells

It has been shown that in hybrid polymer-inorganic photovoltaic devices not all the photogenerated excitons dissociate at the interface immediately, but can instead exist temporarily as bound charge pairs (BCPs). Many of these BCPs do not contribute to the photocurrent, as their long lifetime as a bound species promotes various charge carrier recombination channels. Fast and efficient dissociation of BCPs is therefore considered a key challenge in improving the performance of polymer-inorganic cells. Here we investigate the influence of an inorganic energy cascading Nb2O5 interlayer on the charge carrier recombination channels in poly(3-hexylthiophene-2,5-diyl) (P3HT)-TiO2 and PbSe colloidal quantum dot-TiO2 photovoltaic devices. We demonstrate that the additional Nb2O5 film leads to a suppression of BCP formation at the heterojunction of the P3HT cells and also a reduction in the nongeminate recombination mechanisms in both types of cells. Furthermore, we provide evidence that the reduction in nongeminate recombination in the P3HT-TiO2 devices is due in part to the passivation of deep midgap trap states in the TiO2, which prevents trap-assisted Shockley-Read-Hall recombination. Consequently a significant increase in both the open-circuit voltage and the short-circuit current was achieved, in particular for P3HT-based solar cells, where the power conversion efficiency increased by 39%.

Synthesis and modeling of uniform complex metal oxides by close-proximity atmospheric pressure chemical vapor deposition

A close-proximity atmospheric pressure chemical vapor deposition (AP-CVD) reactor is developed for synthesizing high quality multicomponent metal oxides for electronics. This combines the advantages of a mechanically controllable substrate-manifold spacing and vertical gas flows. As a result, our AP-CVD reactor can rapidly grow uniform crystalline films on a variety of substrate types at low temperatures without requiring plasma enhancements or low pressures. To demonstrate this, we take the zinc magnesium oxide (Zn(1-x)Mg(x)O) system as an example. By introducing the precursor gases vertically and uniformly to the substrate across the gas manifold, we show that films can be produced with only 3% variation in thickness over a 375 mm(2) deposition area. These thicknesses are significantly more uniform than for films from previous AP-CVD reactors. Our films are also compact, pinhole-free, and have a thickness that is linearly controllable by the number of oscillations of the substrate beneath the gas manifold. Using photoluminescence and X-ray diffraction measurements, we show that for Mg contents below 46 at. %, single phase Zn(1-x)Mg(x)O was produced. To further optimize the growth conditions, we developed a model relating the composition of a ternary oxide with the bubbling rates through the metal precursors. We fitted this model to the X-ray photoelectron spectroscopy measured compositions with an error of Δx = 0.0005. This model showed that the incorporation of Mg into ZnO can be maximized by using the maximum bubbling rate through the Mg precursor for each bubbling rate ratio. When applied to poly(3-hexylthiophene-2,5-diyl) hybrid solar cells, our films yielded an open-circuit voltage increase of over 100% by controlling the Mg content. Such films were deposited in short times (under 2 min over 4 cm(2)).

Enhanced performance in fluorene-free organometal halide perovskite light-emitting diodes using tunable, low electron affinity oxide electron injectors

Fluorene-free perovskite light-emitting diodes (LEDs) with low turn-on voltages, higher luminance and sharp, color-pure electroluminescence are obtained by replacing the F8 electron injector with ZnO, which is directly deposited onto the CH3NH3PbBr3 perovskite using spatial atmospheric atomic layer deposition. The electron injection barrier can also be reduced by decreasing the ZnO electron affinity through Mg incorporation, leading to lower turn-on voltages.

Engineering Schottky contacts in open-air fabricated heterojunction solar cells to enable high performance and ohmic charge transport

The efficiencies of open-air processed Cu2O/Zn(1-x)Mg(x)O heterojunction solar cells are doubled by reducing the effect of the Schottky barrier between Zn(1-x)Mg(x)O and the indium tin oxide (ITO) top contact. By depositing Zn(1-x)Mg(x)O with a long band-tail, charge flows through the Zn(1-x)Mg(x)O/ITO Schottky barrier without rectification by hopping between the sub-bandgap states. High current densities are obtained by controlling the Zn(1-x)Mg(x)O thickness to ensure that the Schottky barrier is spatially removed from the p-n junction, allowing the full built-in potential to form, in addition to taking advantage of the increased electrical conductivity of the Zn(1-x)Mg(x)O films with increasing thickness. This work therefore shows that the Zn(1-x)Mg(x)O window layer sub-bandgap state density and thickness are critical parameters that can be engineered to minimize the effect of Schottky barriers on device performance. More generally, these findings show how to improve the performance of other photovoltaic system reliant on transparent top contacts, e.g., CZTS and CIGS.