Half-Metallic Behavior in 2D Transition Metal Dichalcogenides Nanosheets by Dual-Native-Defects Engineering

The Controllable Synthesis of High-Quality Two-Dimensional Iron Sulfide with Specific Phases

2D Fe-chalcogenides have drawn significant attention due to their unique structural phases and distinct properties in exploring magnetism and superconductivity. However, it remains a significant challenge to synthesize 2D Fe-chalcogenides with specific phases in a controllable manner since Fe-chalcogenides have multiple phases. Herein, a molecular sieve-assisted strategy is reported for synthesizing ultrathin 2D iron sulfide on substrates via the chemical vapor deposition method. Using a molecular sieve and tuning growth temperatures to control the partial pressures of precursor concentrations, hexagonal FeS, tetragonal FeS, and non-stoichiometric Fe₇ S₈ nanoflakes can be precisely synthesized. The 2D h-FeS, t-FeS, and Fe₇ S₈ have high conductivities of 5.4 × 10⁵ S m^-1 , 5.8 × 10⁵ S m^-1 , and 1.9 × 10⁶ S m^-1 . 2D tetragonal FeS shows a superconducting transition at 4 K. The spin reorientation at ≈30 K on the non-stoichiometric Fe₇ S₈ nanoflakes with ferrimagnetism up to room temperature has also been observed. The controllable synthesis of various phases of 2D iron sulfide may provide a route for synthesizing other 2D compounds with various phases.

Structure modulation of two-dimensional transition metal chalcogenides: recent advances in methodology, mechanism and applications

Together with the development of two-dimensional (2D) materials, transition metal dichalcogenides (TMDs) have become one of the most popular series of model materials for fundamental sciences and practical applications. Due to the ever-growing requirements of customization and multi-function, dozens of modulated structures have been introduced in TMDs. In this review, we present a systematic and comprehensive overview of the structure modulation of TMDs, including point, linear and out-of-plane structures, following and updating the conventional classification for silicon and related bulk semiconductors. In particular, we focus on the structural characteristics of modulated TMD structures and analyse the corresponding root causes. We also summarize the recent progress in modulating methods, mechanisms, properties and applications based on modulated TMD structures. Finally, we demonstrate challenges and prospects in the structure modulation of TMDs and forecast potential directions about what and how breakthroughs can be achieved.

High Curie Temperature and Intrinsic Ferromagnetic Half-Metallicity in Mn2X3 (X = S, Se, Te) Nanosheets

Two-dimensional (2D) intrinsic half-metallic materials with room-temperature ferromagnetism, sizable magnetic anisotropy energy (MAE), and wide half-metallic gap are excellent candidates for pure spin generation, injection, and transport in nanospintronic applications. However, until now, such 2D half metallicity has been rarely observed in experiment. In this work, by using first-principles calculations, we design a series of such materials, namely, Mn₂X₃ (X = S, Se, Te) nanosheets, which could be obtained by controlling the thickness of synthesized α-MnX(111) nanofilm to a quintuple X-Mn-X-Mn-X layer. All these nanosheets are dynamically and thermally stable. Electronic and magnetic studies reveal they are intrinsic half metals with high Curie temperatures between 718 and 820 K, sizable MAEs with -1.843 meV/Mn for Mn₂Te₃ nanosheet, and wide half-metallic gaps from 1.55 to 1.94 eV. Above all, the outstanding features of Mn₂X₃ nanosheets make them promising in fabricating nanospintronic devices working at room temperature.

Spin-Dependent Transport at 2D Solids: From Nonmagnetic Layers to Ferromagnetic van der Waals Structures

Spintronics is a promising alternative to the conventional silicon transistor-based electronics that are gradually approaching their physical limitations. Ultrathin two-dimensional van der Waals (vdW) materials (2D materials) with controllable spin degrees of freedom are recognized as extremely promising spintronic materials in architectures for the post-Moore era. In this Perspective, we review recent progress on spin-dependent transport behaviors (SDTBs) confined at the 2D scale, which are the mainstream paradigms for spintronic devices. We first present the mechanism and the key factors of SDTBs in 2D nonmagnetic materials-based hybrid devices. Then, some chemical modulation strategies for inducing short-range magnetic order and magneto-electric performance into 2D nonmagnetic materials are discussed. Furthermore, we concentrate on introducing intriguing SDTBs in 2D long-range ferromagnetic materials-based vdW devices. Finally, we highlight the current challenges in the study of spin-dependent transport of 2D modified materials and 2D material-based spintronic devices, in the hope of accelerating their applications.

Ferromagnetism of two-dimensional transition metal chalcogenides: both theoretical and experimental investigations

In recent years, with the fast development of integrated circuit electronic devices and technologies, it has become urgent to improve the density of data storage and lower the energy losses of devices. Under these circumstances, two-dimensional (2D) materials, which have a smaller size and lower energy loss compared with bulk materials, are becoming ideal candidates for future spintronic devices. Among them, 2D transition metal chalcogenides (TMCs), which have excellent electronic and optical properties, have attracted great attention from researchers. However, most of them are intrinsically non-magnetic, which severely hinders their further applications in spintronics. Therefore, introducing intrinsic room-temperature ferromagnetism into 2D TMC materials has become an important issue in spintronics. In this work, we review the introduction of intrinsic ferromagnetism into typical 2D TMCs using various strategies, such as defect engineering, doping with transition metal elements, and phase transfer. Additionally, we found that their ferromagnetism could be adjusted via changing the experimental conditions, such as the nucleation temperature, ion irradiation dose, doping amount, and phase ratio. Finally, we provide some insight into prospective solutions for introducing ferromagnetism into 2D TMCs, hoping to shed some light on future spintronics development.

Defect Engineering of Photocatalysts towards Elevated CO2 Reduction Performance

Photocatalytic CO₂ reduction provides a promising solution to address the crises of massive CO₂ emissions and fossil energy shortages. As one of the most effective strategies to promote CO₂ photoconversion, defect engineering shows great potential in modulating the electronic structure and light absorption properties of photocatalysts while increasing surface active sites for CO₂ activation and conversion. This Review summarizes the recent progress in defect engineering of photocatalysts to promote CO₂ reduction performances from the following four aspects: 1) Approaches to defect (mainly vacancy and dopant) generation in photocatalysts; 2) defect structure characterization techniques; 3) physical and chemical properties of defect-engineered photocatalysts; 4) CO₂ reduction performance enhancements in activity, selectivity, and stability of photocatalysts by defect engineering. This Review is expected to present readers with a comprehensive view of progress in the field of photocatalytic CO₂ reduction through defect engineering for elevated CO₂ -to-fuels conversion efficiency.

A first-principles study on the electronic property and magnetic anisotropy of ferromagnetic CrOF and CrOCl monolayers

Two-dimensional ferromagnetic materials with large perpendicular magnetic anisotropy (PMA) hold great potential in realizing low critical switching current, high thermal stability and high density nonvolatile storage in magnetic random-access memories. Our first-principles calculations reveal that CrOF and CrOCl monolayers (MLs) are two-dimensional (2D) ferromagnetic semiconductors with out-of-plane magnetic easy axis, and PMAs of CrOF and CrOCl MLs are mainly contributed by Cr atoms. The magnetic anisotropy of CrOF and CrOCl MLs can be controlled and enhanced by applying biaxial strain. Tensile strain can further enhance PMAs of CrOF and CrOCl MLs by 82.9% and 161.0% higher than those of unstrained systems, respectively. In addition, appropriate compressive strain can switch the magnetic easy axis of CrOF and CrOCl MLs from out-of-plane direction to in-plane direction. The semiconductor natures of CrOF and CrOCl MLs robust against biaxial strain, the band gaps of these systems under biaxial strain are in the range of 1.26 eV to 2.40 eV. By applying biaxial strain, the Curie temperatures of CrOF and CrOCl MLs increase up to 282 K and 163 K, respectively. These tunable properties suggest that CrOF and CrOCl MLs have great application potentials for magnetic data storage.

An Efficient Interfacial Synthesis of Two-Dimensional Metal-Organic Framework Nanosheets for Electrochemical Hydrogen Peroxide Production

Two-dimensional (2D) metal-organic framework nanosheets (MOF NSs) play a vital role in catalysis, but the most preparation is ultrasonication or solvothermal. Herein, a liquid-liquid interfacial synthesis method has been developed for the efficient fabrication of a series of 2D Ni MOF NSs. The active sites could be modulated by readily tuning the ratios of metal precursors and organic linkers (R_M/L ). The Ni MOF NSs display highly R_M/L dependent activities towards 2e oxygen reduction reaction (ORR) to hydrogen peroxide (H₂ O₂ ), where the Ni MOF NSs with the R_M/L of 6 exhibit the optimal near-zero overpotential, ca. 98 % H₂ O₂ selectivity and production rate of ca. 80 mmol g_cat ^-1  h^-1 in 0.1 M KOH. As evidenced by X-ray absorption fine structure spectroscopy, the coordination environment of active sites changed from saturation to unsaturation, and the partially unsaturated metal atoms are crucial to create optimal sites for enhancing the electrocatalysis.

Surface/Interface Chemistry Engineering of Correlated-Electron Materials: From Conducting Solids, Phase Transitions to External-Field Response

Correlated electronic materials (CEMs) with strong electron-electron interactions are often associated with exotic properties, such as metal-insulator transition (MIT), charge density wave (CDW), superconductivity, and magnetoresistance (MR), which are fundamental to next generation condensed matter research and electronic devices. When the dimension of CEMs decreases, exposing extremely high specific surface area and enhancing electronic correlation, the surface states are equally important to the bulk phase. Therefore, surface/interface chemical interactions provide an alternative route to regulate the intrinsic properties of low-dimensional CEMs. Here, recent achievements in surface/interface chemistry engineering of low-dimensional CEMs are reviewed, using surface modification, molecule-solid interaction, and interface electronic coupling, toward modulation of conducting solids, phase transitions including MIT, CDW, superconductivity, and magnetism transition, as well as external-field response. Surface/interface chemistry engineering provides a promising strategy for exploring novel properties and functional applications in low-dimensional CEMs. Finally, the current challenge and outlook of the surface/interface engineering are also pointed out for future research development.

Molten-Salt-Assisted Chemical Vapor Deposition Process for Substitutional Doping of Monolayer MoS2 and Effectively Altering the Electronic Structure and Phononic Properties

Substitutional doping of layered transition metal dichalcogenides (TMDs) has been proved to be an effective route to alter their intrinsic properties and achieve tunable bandgap, electrical conductivity and magnetism, thus greatly broadening their applications. However, achieving valid substitutional doping of TMDs remains a great challenge to date. Herein, a distinctive molten-salt-assisted chemical vapor deposition (MACVD) method is developed to match the volatilization of the dopants perfectly with the growth process of monolayer MoS2, realizing the substitutional doping of transition metal Fe, Co, and Mn. This doping strategy effectively alters the electronic structure and phononic properties of the pristine MoS2. In addition, a temperature-dependent Raman spectrum is employed to explore the effect of dopants on the lattice dynamics and first-order temperature coefficient of monolayer MoS2, and this doping effect is illustrated in depth combined with the theoretical calculation. This work provides an intriguing and powerful doping strategy for TMDs through employing molten salt in the CVD system, paving the way for exploring new properties of 2D TMDs and extending their applications into spintronics, catalytic chemistry and photoelectric devices.

Imprinting Ferromagnetism and Superconductivity in Single Atomic Layers of Molecular Superlattices

Ferromagnetism and superconductivity are two antagonistic phenomena since ferromagnetic exchange fields tend to destroy singlet Cooper pairs. Reconciliation of these two competing phases has been achieved in vertically stacked heterostructures where these two orders are confined in different layers. However, controllable integration of these two phases in one atomic layer is a longstanding challenge. Here, an interlayer-space-confined chemical design (ICCD) is reported for the synthesis of dilute single-atom-doped TaS₂ molecular superlattice, whereby ferromagnetism is observed in the superconducting TaS₂ layers. The intercalation of 2H-TaS₂ crystal with bulky organic ammonium molecule expands its van der Waals gap for single-atom doping via co-intercalated cobalt ions, resulting in the formation of quasi-monolayer Co-doped TaS₂ superlattices. Isolated Co atoms are decorated in the basal plane of the TaS₂ via substituting the Ta atom or anchoring at a hollow site, wherein the orbital-selected p-d hybridization between Co and neighboring Ta and S atoms induces local magnetic moments with strong ferromagnetic coupling. This ICCD approach can be applied to various metal ions, enabling the synthesis of a series of crystal-size TaS₂ molecular superlattices.

Performance Improvement by Ozone Treatment of 2D PdSe2

Atomic-scale defects in two-dimensional transition metal dichalcogenides (TMDs) often dominate their physical and chemical properties. Introducing defects in a controllable manner can tailor properties of TMDs. For example, chalcogen atom defects in TMDs were reported to trigger phase transition, induce ferromagnetism, and drive superconductivity. However, reported strategies to induce chalcogen atom defects including postgrowth annealing, laser irradiation, or plasma usually require high temperature (such as 500 °C) or cause unwanted structural damage. Here, we demonstrate low-temperature (60 °C) partial surface oxidation in 2D PdSe₂ with low disorder and good stability. The combination of scanning tunneling microscopy, X-ray photoelectron spectroscopy, and density functional theory calculations provide evidence of atomic-scale partial oxidation with both atomic resolution and chemical sensitivity. We also experimentally demonstrate that this controllable oxygen incorporation effectively tailors the electronic, optoelectronic, and catalytic activity of PdSe₂. This work provides a pathway toward fine-tuning the physical and chemical properties of 2D TMDs and their applications in nanoelectronics, optoelectronics, and electrocatalysis.

First-Principles Study of the Effect of Native Defects on Spin Polarization and Exchange Coupling Interaction in Semimetal V3O4

We use first-principles calculations to investigate the mechanism of the effect of native defects on the spin polarization and exchange coupling interaction in the V₃O₄ semimetal material. Our results reveal that, in contrast to other neutral defects, V vacancy defects in V₃O₄ at A/B sites are in favor of higher spin polarization degrees and lower defect formation energies. Compared to ideal V₃O₄, the V vacancy defects at A/B sites cause slightly lower spin polarization degrees but much higher exchange coupling interactions. Our results suggest an effective route to mediate the spin polarization and exchange coupling by defect engineering, which promotes the applications of the V₃O₄ semimetal material in spintronics.

Switchable metal-to-half-metal transition at the semi-hydrogenated graphene/ferroelectric interface

Tuning the half-metallicity of low-dimensional materials using an electric field is particularly appealing for spintronic applications but typically requires an ultra-high field, hampering practical applications. Interface engineering has been suggested as an alternative practical means to overcome this limitation and control the metal-to-half-metal transition. Here, we show from first-principles calculations that the polarization switching at the interface of semi-hydrogenated graphene (i.e., graphone) and a ferroelectric PbTiO3 layer can reversibly tune a metal to half-metal transition in graphone. Using a simple Hubbard model, this is rationalized using interface atomic orbital hybridization, which also reveals the origin of the high-quality screening of metallic graphone, preserving bulk-like stable ferroelectric polarization in the PbTiO3 film down to a thickness of two unit cells. These findings do not only open a new perspective on engineering half-metallicity at the interface of two-dimensional materials and ferroelectrics, but also identify graphone as a powerful atomically thin electrode, which holds great promise for the design of ultrafast and high integration density information-storage devices.

High-Temperature Ferromagnetism in an Fe3P Monolayer with a Large Magnetic Anisotropy

For the development of high-performance spintronic nanodevices, one of the most urgent and challenging tasks is the preparation of two-dimensional materials with room-temperature ferromagnetism and a large magnetic anisotropic energy (MAE). Through first-principles swarm-intelligence structural search calculations, we identify an ideal ferromagnetic Fe₃P monolayer, in which Fe atoms show a perfect Kagome lattice, leading to strong in-plane Fe-Fe coupling. The predicted Curie temperature of Fe₃P reaches ∼420 K, and its MAE is comparable to those of ferromagnetic materials, such as Fe and Fe₂Si. Moreover, the Fe₃P monolayer remains as an above room-temperature ferromagnet under biaxial strains as large as 10%. Its lattice can be retained at temperatures of ≤1000 K, exhibiting a high thermodynamic stability. All of these desirable properties make the Fe₃P monolayer a promising candidate for applications in spintronic nanodevices.

Engineering the magnetic properties of PtSe2 monolayer through transition metal doping

Using first-principles calculations, we have studied the energetic feasibility and magnetic properties of transition metal (TM) doped PtSe₂ monolayers. Our study shows that TM doped PtSe₂ layers with 6.25% doping exhibit versatile spintronic behaviour depending on the nature of the dopant TM atoms. Groups IVB and VIII10 TM doped PtSe₂ layers are non magnetic semiconductors, while groups IIIB, VB, VIII8, VIII9, IB TM doped PtSe₂ layers are half-metals and finally, groups VIB, VIIB and IIB TM doped PtSe₂ layers are spin polarized semiconductors. The presence of half-metallic and magnetic semiconducting characteristics suggest that TM doped PtSe₂ layers can be considered as a new kind of dilute magnetic semiconductor and thus have the promise to be used in spintronics. By studying the magnetic interactions between two TM dopants in PtSe₂ monolayers for dopant concentration of 12.5% and dopant distance of 12.85 [Formula: see text], we have found that in particular, Fe and Ru doped PtSe₂ systems are ferromagnetic half-metal having above-room-temperature Curie point of 422 and 379.9 K, respectively. By varying the dopant distance and concentration we have shown that the magnetic interaction is strongly dependent on dopant distance and concentration. Interestingly, the Curie temperature of TM doped PtSe₂ layers is affected by the correlation effects on the TM d states and also spin-orbit coupling. We have also studied the magnetic properties of defect complex composed of one TM dopant and one Pt vacancy (TM_Pt  +  V_Pt) which shows novel magnetism.

Defect driven spin state transition and the existence of half-metallicity in CoO

We unveil the native defect induced high spin to low spin state transition in [Formula: see text] and half-metallicity in CoO. First principles calculations unravel that, defect density holds a key role in dictating the spin-state transition in [Formula: see text] ion in CoO, and introducing the half-metallicity. Charge transfer in the vicinity of vacancy plane favors the stabilization and coexistence of bivalent [Formula: see text] and trivalent [Formula: see text] ion in CoO. We propose that defect engineering could serve as a route to design the half metallicity in transition metal mono-oxides.

MnX (X = P, As) monolayers: a new type of two-dimensional intrinsic room temperature ferromagnetic half-metallic material with large magnetic anisotropy

Recent experimentally demonstrated intrinsic two-dimensional (2D) magnetism has sparked intense interest for advanced spintronic applications. However, the rather low Curie temperature and small magnetic anisotropic energy (MAE) greatly limit their application scope. Here, by using density functional theory calculations, we predict a series of stable 2D MnX (X = P, As, Sb) monolayers, among which MnP and MnAs monolayers exhibit intrinsic ferromagnetic (FM) ordering and considerably large MAEs of 166 and 281 μeV per Mn atom, respectively. More interestingly, the 2D MnP and MnAs monolayers exhibit highly desired half-metallicity with wide spin gaps of about 3 eV. Monte Carlo simulations suggest markedly high Curie temperatures of MnP and MnAs monolayers, ∼495 K and 711 K, respectively. Besides, these monolayers are the lowest energy structures in the 2D search space with excellent dynamic and thermal stabilities. A viable experimental synthesis route is also proposed to produce MnX monolayers via the selective chemical etching method. The outstanding attributes of MnP and MnAs monolayers would substantially broaden the applicability of 2D magnetism for a wide range of applications.

Atomic-Scale Structural Modification of 2D Materials

2D materials have attracted much attention since the discovery of graphene in 2004. Due to their unique electrical, optical, and magnetic properties, they have potential for various applications such as electronics and optoelectronics. Owing to thermal motion and lattice growth kinetics, different atomic-scale structures (ASSs) can originate from natural or intentional regulation of 2D material atomic configurations. The transformations of ASSs can result in the variation of the charge density, electronic density of state and lattice symmetry so that the property tuning of 2D materials can be achieved and the functional devices can be constructed. Here, several kinds of ASSs of 2D materials are introduced, including grain boundaries, atomic defects, edge structures, and stacking arrangements. The design strategies of these structures are also summarized, especially for atomic defects and edge structures. Moreover, toward multifunctional integration of applications, the modulation of electrical, optical, and magnetic properties based on atomic-scale structural modification are presented. Finally, challenges and outlooks are featured in the aspects of controllable structure design and accurate property tuning for 2D materials with ASSs. This work may promote research on the atomic-scale structural modification of 2D materials toward functional applications.

Structural, vibrational and electronic properties of the superconductor CuxTiSe2: theoretical and experimental insights

The crystal/electronic structure and vibrational properties of the CuxTiSe2 intercalation compounds were studied combining experimental and theoretical techniques. The Cu added into the TiSe2 matrix was characterized as an intercalant atom into van der Waals gaps from Raman spectroscopy analysis. Theoretical and experimental data indicate the Cu-intercalation effect on the crystalline structure as a local disorder affecting [TiSe6] clusters from SeSe layers, which results in a volume expansion. A significant charge transfer from Cu atoms to the host lattice results in a change from Ti4+ to Ti3+ species, narrowing the band-gap and increasing the superconductivity of the material.

High Curie-temperature intrinsic ferromagnetism and hole doping-induced half-metallicity in two-dimensional scandium chlorine monolayers

Two-dimensional (2D) ferromagnetic materials provide new platforms for spintronic applications, but most of the reported 2D magnetic orderings can only be maintained at low temperature. The search for high Curie temperature intrinsic ferromagnetism is still a current hotspot. Herein through comprehensive first-principles calculations and Monte Carlo simulation, we predict a promising 2D scandium chlorine (ScCl) monolayer with intrinsic ferromagnetism and a Curie temperature of 185 K, which is much higher than that of the reported CrI₃ monolayer (45 K) and the boiling point of liquid nitrogen (77 K). Moreover, a small amount of hole doping can induce a transition from a ferromagnetic metal to a half-metal. Furthermore, the ScCl monolayer possesses excellent thermal and dynamical stabilities as well as feasibility of experimental exfoliation from its layered bulk. These intriguing electronic and magnetic properties make the ScCl monolayer a promising candidate for spintronic applications.

Transition-Metal Dihydride Monolayers: A New Family of Two-Dimensional Ferromagnetic Materials with Intrinsic Room-Temperature Half-Metallicity

Two-dimensional (2D) ferromagnetic materials with intrinsic half-metallicity are highly desirable for nanoscale spintronic applications. Here, we predict a new and stable family of 2D transition-metal dihydride (MH₂; M = Sc, Ti, V, Cr, Fe, Co, Ni) monolayers with novel properties. Our density functional theory computation shows that CoH₂ and ScH₂ monolayers are ferromagnetic metals, while the others are antiferromagnetic semiconductors. In particular, the CoH₂ monolayer is a perfect half-metal with a wide spin gap of 3.48 eV. The ScH₂ monolayer can also possess half-metallicity through hole doping. Most importantly, our Monte Carlo simulations show that the CoH₂ monolayer possesses an above-room-temperature Curie point (339 K), while that of the ScH₂ monolayer can also reach 160 K. A synthetic approach is proposed to realize CoH₂ and ScH₂ monolayers in the laboratory. Notably, their half-metallicity can be well maintained on substrates. The new family of MH₂ monolayers are promising functional materials for spintronic applications due to their novel magnetic properties.

FeS2 /CoS2 Interface Nanosheets as Efficient Bifunctional Electrocatalyst for Overall Water Splitting

Electrochemical water splitting to produce hydrogen and oxygen, as an important reaction for renewable energy storage, needs highly efficient and stable catalysts. Herein, FeS₂ /CoS₂ interface nanosheets (NSs) as efficient bifunctional electrocatalysts for overall water splitting are reported. The thickness and interface disordered structure with rich defects of FeS₂ /CoS₂ NSs are confirmed by atomic force microscopy and high-resolution transmission electron microscopy. Furthermore, extended X-ray absorption fine structure spectroscopy clarifies that FeS₂ /CoS₂ NSs with sulfur vacancies, which can further increase electrocatalytic performance. Benefiting from the interface nanosheets' structure with abundant defects, the FeS₂ /CoS₂ NSs show remarkable hydrogen evolution reaction (HER) performance with a low overpotential of 78.2 mV at 10 mA cm^-2 and a superior stability for 80 h in 1.0 m KOH, and an overpotential of 302 mV at 100 mA cm^-2 for the oxygen evolution reaction (OER). More importantly, the FeS₂ /CoS₂ NSs display excellent performance for overall water splitting with a voltage of 1.47 V to achieve current density of 10 mA cm^-2 and maintain the activity for at least 21 h. The present work highlights the importance of engineering interface nanosheets with rich defects based on transition metal dichalcogenides for boosting the HER and OER performance.

Novel structured transition metal dichalcogenide nanosheets

Ultrathin two-dimensional (2D) layered transition metal dichalcogenides (TMDs) have attracted considerable attention owing to their unique properties and great potential in a wide range of applications. Great efforts have been devoted to the preparation of novel-structured TMD nanosheets by engineering their intrinsic structures at the atomic scale. Until now, a lot of new-structured TMD nanosheets, such as vacancy-containing TMDs, heteroatom-doped TMDs, TMD alloys, 1T'/1T phase and in-plane TMD crystal-phase heterostructures, TMD heterostructures and Janus TMD nanosheets, have been prepared. These materials exhibit unique properties and hold great promise in various applications, including electronics/optoelectronics, thermoelectrics, catalysis, energy storage and conversion and biomedicine. This review focuses on the most recent important discoveries in the preparation, characterization and application of these new-structured ultrathin 2D layered TMDs.

Metallic CuCo2S4 nanosheets of atomic thickness as efficient bifunctional electrocatalysts for portable, flexible Zn-air batteries

Optimized catalysts show great potential for renewable energy storage and conversion. Herein, we report metallic CuCo2S4 nanosheets (NSs) of atomic thickness as efficient bifunctional electrocatalysts for use in portable, flexible Zn-air batteries. The metallic CuCo2S4 NSs of atomic thickness with 4-atom-thick to 6-atom-thick layers are confirmed by temperature-dependent electrical resistance measurements and atomic force microscopy. Furthermore, extended X-ray absorption fine structure spectroscopy confirms that CuCo2S4 NSs with sulfur vacancies can further increase the OER activity. Due to high electrical conductivity and ultrathin nanosheet structure with abundant defects, CuCo2S4 NSs exhibit excellent reversible oxygen catalytic performance with an overpotential of 287 mV (at j = 10 mA cm-2) for the oxygen evolution reaction (OER) and an onset potential of 0.90 V for the oxygen reduction reaction (ORR). Additionally, the portable, flexible Zn-air battery using CuCo2S4 NSs as the air-cathode displays a high open circuit voltage and strong rechargeable capacity for 18 h. The present study highlights the importance of designing metallic catalysts having atomic thickness with surface defects for highly efficient and stable renewable energy storage and conversion.