Influence of interface structure on mass transport in phase boundaries between different ionic materials: Experimental studies and formal considerations

Tuning Ionic Conductivity in Fluorite Gd-Doped CeO2-Bixbyite RE2O3 (RE = Y and Sm) Multilayer Thin Films by Controlling Interfacial Strain

Interfacial strain in heteroepitaxial oxide thin films is a powerful tool for discovering properties and recognizing the potential of materials performance. Particularly, facilitating ion conduction by interfacial strain in oxide multilayer thin films has always been seen to be a highly promising route to this goal. However, the effect of interfacial strain on ion transport properties is still controversial due to the difficulty in deconvoluting the strain contribution from other interfacial phenomena, such as space charge effects. Here, we show that interfacial strain can effectively tune the ionic conductivity by successfully growing multilayer thin films composed of an ionic conductor Gd-doped CeO2 (GDC) and an insulator RE2O3 (RE = Y and Sm). In contrast to compressively strained GDC-Y2O3 multilayer films, tensile strained GDC-Sm2O3 multilayer films demonstrate the enhanced ionic conductivity of GDC, which is attributed to the increased concentration of oxygen vacancies. In addition, we demonstrate that increasing the number of interfaces has no impact on the further enhancement of the ionic conductivity in GDC-Sm2O3 multilayer films. Our findings demonstrate the unambiguous role of interfacial strain on ion conduction of oxides and provide insights into the rational design of fast ion conductors through interface engineering.

Dislocation-Mediated Conductivity in Oxides: Progress, Challenges, and Opportunities

Dislocations in ionic solids are topological extended defects that modulate composition, strain, and charge over multiple length scales. As such, they provide an extra degree of freedom to tailor ionic and electronic transport beyond limits inherent in bulk doping. Heterogeneity of transport paths as well as the ability to dynamically reconfigure structure and properties through multiple stimuli lend dislocations to particular potential applications including memory, switching, non-Ohmic electronics, capacitive charge storage, and single-atom catalysis. However, isolating, understanding, and predicting causes of modified transport behavior remain a challenge. In this Perspective, we first review existing reports of dislocation-modified transport behavior in oxides, as well as synthetic strategies and multiscale characterization routes to uncover processing-structure-property relationships. We outline a vision for future research, suggesting outstanding questions, tasks, and opportunities. Advances in this field will require highly interdisciplinary, convergent computational-experimental approaches, covering orders of magnitude in length scale, and spanning fields from microscopy and machine learning to electro-chemo-mechanics and point defect chemistry to transport-by-design and advanced manufacturing.

Anisotropic Strain in Rare-Earth Substituted Ceria Thin Films Probed by Polarized Raman Spectroscopy and First-Principles Calculations

Lattice strain in oxygen ion conductors can be used to tune their functional properties for applications in fuel cells, sensors, or catalysis. However, experimental measurements of thin film strain in both in- and out-of-plane directions can be experimentally challenging. We propose a method for measuring strain in rare-earth doped ceria thin films by polarized Raman spectroscopy. We study epitaxial CeO₂ films substituted by La, Gd, and Yb grown on MgO substrates with BaZrO₃ and SrTiO₃ interlayers, where different levels of strain are generated by annealing at distinct temperatures. The films show in-plane compression and out-of-plane expansion, resulting in a lowering from the bulk cubic to tetragonal lattice symmetry. This leads to the splitting of the F_2g Raman mode in the cubic phase to B_2g and E_g modes in the tetragonal lattice. The symmetry and frequency of these modes are determined by polarized Raman in the backscattering and right-angle scattering geometries as well as by first-principal calculations. The frequency splitting of the two modes is proportional to the strain measured by X-ray diffraction and its magnitude agrees with first-principles calculations. The results offer a fast, nondestructive, and precise method for measuring both in- and out-of-plane strain in ceria and can be readily applied to other ionic conductors.

Superionic Conductivity in Ceria-Based Heterostructure Composites for Low-Temperature Solid Oxide Fuel Cells

Ceria-based heterostructure composite (CHC) has become a new stream to develop advanced low-temperature (300-600 °C) solid oxide fuel cells (LTSOFCs) with excellent power outputs at 1000 mW cm-2 level. The state-of-the-art ceria-carbonate or ceria-semiconductor heterostructure composites have made the CHC systems significantly contribute to both fundamental and applied science researches of LTSOFCs; however, a deep scientific understanding to achieve excellent fuel cell performance and high superionic conduction is still missing, which may hinder its wide application and commercialization. This review aims to establish a new fundamental strategy for superionic conduction of the CHC materials and relevant LTSOFCs. This involves energy band and built-in-field assisting superionic conduction, highlighting coupling effect among the ionic transfer, band structure and alignment impact. Furthermore, theories of ceria-carbonate, e.g., space charge and multi-ion conduction, as well as new scientific understanding are discussed and presented for functional CHC materials.

Epitaxial 8YSZ/Y2Zr2O7 multilayers: a conductivity and strain study

Thin films of Y2Zr2O7 were grown via pulsed laser deposition (PLD) on substrates of MgO(110), Al2O3(0001) and Al2O3(11[combining macron]02). Electrical properties were investigated via electrical impedance spectroscopy. Unexpectedly, the ionic conductivity is not affected by the microstructure; only minor differences in conductivities and activation energies were measured between epitaxial thin films (on MgO) and textured thin films (on Al2O3, both orientations). This indicates the grain boundaries of such a material to only marginally block the oxygen vacancy transport. Starting from these results, epitaxial multilayers of Y2Zr2O7 and 8 mol% yttria-stabilized zirconia with same overall thickness (between 60 and 70 nm) and different number of interfaces (from 1 up to 9) have been deposited on MgO(110) and the role of the residual compressive strain on the electrical properties has been investigated by means of XRD analysis and impedance spectroscopy. The results, showing no effect of the strain field on the ionic conductivity, indicate the negligible effect of the compressive strain on the ionic transport properties of the material.

Influence of texture and grain misorientation on the ionic conduction in multilayered solid electrolytes – interface strain effects in competition with blocking grain boundaries

We investigate the relaxation of mismatch induced interface strain as a function of the texture and its influence on the ionic conductivity in YSZ/Er₂O₃ multilayer thin films.

The effects of lattice strain, dislocations, and microstructure on the transport properties of YSZ films

We report that lattice strain and dislocations play a negligible role on the ionic conductivity of YSZ films.

YSZ thin films with minimized grain boundary resistivity

The grain boundary resistance of nano-columnar yttria-stabilized zirconia thin films is almost completely eliminated near the film–substrate interface through substrate induced magnesium doping.

Coherency strain and its effect on ionic conductivity and diffusion in solid electrolytes--an improved model for nanocrystalline thin films and a review of experimental data

A phenomenological and analytical model for the influence of strain effects on atomic transport in columnar thin films is presented. A model system consisting of two types of crystalline thin films with coherent interfaces is assumed. Biaxial mechanical strain ε0 is caused by lattice misfit of the two phases. The conjoined films consist of columnar crystallites with a small diameter l. Strain relaxation by local elastic deformation, parallel to the hetero-interface, is possible along the columnar grain boundaries. The spatial extent δ0 of the strained hetero-interface regions can be calculated, assuming an exponential decay of the deformation-forces. The effect of the strain field on the local ionic transport in a thin film is then calculated by using the thermodynamic relation between (isostatic) pressure and free activation enthalpy ΔG(#). An expression describing the total ionic transport relative to bulk transport of a thin film or a multilayer as a function of the layer thickness is obtained as an integral average over strained and unstrained regions. The expression depends only on known material constants such as Young modulus Y, Poisson ratio ν and activation volume ΔV(#), which can be combined as dimensionless parameters. The model is successfully used to describe own experimental data from conductivity and diffusion studies. In the second part of the paper a comprehensive literature overview of experimental studies on (fast) ion transport in thin films and multilayers along solid-solid hetero-interfaces is presented. By comparing and reviewing the data the observed interface effects can be classified into three groups: (i) transport along interfaces between extrinsic ionic conductors (and insulator), (ii) transport along an open surface of an extrinsic ionic conductor and (iii) transport along interfaces between intrinsic ionic conductors. The observed effects in these groups differ by about five orders of magnitude in a very consistent way. The modified interface transport in group (i) is most probably caused by strain effects, misfit dislocations or disordered transition regions.

A microdot multilayer oxide device: let us tune the strain-ionic transport interaction

In this paper, we present a strategy to use interfacial strain in multilayer heterostructures to tune their resistive response and ionic transport as active component in an oxide-based multilayer microdot device on chip. For this, fabrication of strained multilayer microdot devices with sideways attached electrodes is reported with the material system Gd0.1Ce0.9O(2-δ)/Er2O3. The fast ionic conducting Gd0.1Ce0.9O(2-δ) single layers are altered in lattice strain by the electrically insulating erbia phases of a microdot. The strain activated volume of the Gd0.1Ce0.9O(2-δ) is investigated by changing the number of individual layers from 1 to 60 while keeping the microdot at a constant thickness; i.e., the proportion of strained volume was systematically varied. Electrical measurements showed that the activation energy of the devices could be altered by Δ0.31 eV by changing the compressive strain of a microdot ceria-based phase by more than 1.16%. The electrical conductivity data is analyzed and interpreted with a strain volume model and defect thermodynamics. Additionally, an equivalent circuit model is presented for sideways contacted multilayer microdots. We give a proof-of-concept for microdot contacting to capture real strain-ionic transport effects and reveal that for classic top-electrode contacting the effect is nil, highlighting the need for sideways electric contacting on a nanoscopic scale. The near order ionic transport interaction is supported by Raman spectroscopy measurements. These were conducted and analyzed together with fully relaxed single thin film samples. Strain states are described relative to the strain activated volumes of Gd0.1Ce0.9O(2-δ) in the microdot multilayer. These findings reveal that strain engineering in microfabricated devices allows altering the ionic conduction over a wide range beyond classic doping strategies for single films. The reported fabrication route and concept of strained multilayer microdots is a promising path for applying strained multilayer oxides as active new building blocks relevant for a broad range of microelectrochemical devices, e.g., resistive switching memory prototypes, resistive or electrochemical sensors, or as active catalytic solid state surface components for microfuel cells or all-solid-state batteries.

Reduced ionic conductivity in biaxially compressed ceria

Thin film multilayers composed of Y₂O₃-doped CeO₂(YDC) with CeO₂, with Ce_0.70Zr_0.30O₂(CZO30), or with Ce_0.55Zr_0.45O₂(CZO45) were fabricated to systematically quantify the effect of biaxial compressive strain on oxygen ion conductivity in YDC.

18O-tracer diffusion along nanoscaled Sc2O3/yttria stabilized zirconia (YSZ) multilayers: on the influence of strain

The oxygen tracer diffusion coefficient describing transport along nano-/microscaled YSZ/Sc2O3 multilayers as a function of the thick-ness of the ion-conducting YSZ layers has been measured by isotope exchange depth profiling (IEDP), using secondary ion mass spec-trometry (SIMS). The multilayer samples were prepared by pulsed laser deposition (PLD) on (0001) Al2O3 single crystalline substrates. The values for the oxygen tracer diffusion coefficient were analyzed as a combination of contributions from bulk and interface contributions and compared with results from YSZ/Y2O3-multilayers with similar microstructure. Using the Nernst-Einstein equation as the relation between diffusivity and electrical conductivity we find very good agreement between conductivity and diffusion data, and we exclude substantial electronic conductivity in the multilayers. The effect of hetero-interface transport can be well explained by a simple interface strain model. As the multilayer samples consist of columnar film crystallites with a defined inter-face structure and texture, we also discuss the influence of this particular microstructure on the interfacial strain.

Activation volume tensor for oxygen-vacancy migration in strained CeO2 electrolytes

We examine the effect of mechanical strain on the migration of oxygen vacancies in fluorite-structured ceria by means of density functional theory calculations. Different strain states (uniaxial, biaxial and isotropic) and strain magnitudes (up to ± 7%) are considered. From the calculations we extract the complete activation volume tensor for oxygen-vacancy migration in CeO(2), that is, all diagonal ΔV(mig,kk) and off-diagonal ΔV(mig,kl) tensor elements. These individual tensor elements are found, crucially, to be independent of strain state; they do, however, depend on stress (ΔV(mig,kk)) or effective pressure (ΔV(mig,kl)). Armed with knowledge of all tensor elements we predict strain states for which oxygen-ion transport in ceria is maximized. In general, with our approach the effect of an arbitrary strain state on the migration barrier for mass transport in a solid can be calculated quantitatively.

Defect chemistry of oxide nanomaterials with high surface area: ordered mesoporous thin films of the oxygen storage catalyst CeO2-ZrO2

Herein we report the electrical transport properties of a series of ordered mesoporous ceria-zirconia (CexZr1-xO2, referred to as mp-CZO) thin films with both a cubic structure of (17±2) nm diameter pores and nanocrystalline walls. Samples over the whole range of composition, including bare CeO2 and ZrO2, were fabricated by templating strategies using the large diblock copolymer KLE as the structure-directing agent. Both the nanoscale structure and the chemical composition of the mesoporous materials were analyzed by a combination of scanning and transmission electron microscopy, grazing incidence small-angle X-ray scattering, X-ray photoelectron spectroscopy, and time-of-flight secondary ion mass spectrometry. The total conductivity as a function of the film composition, temperature, and oxygen partial pressure was measured using impedance spectroscopy. The mesoporous solid solutions of CeO2-ZrO2 prepared in this work showed a higher stability against thermal ripening than both binary oxides, making them ideal model systems to study both the charge transport properties and the oxygen storage at elevated temperatures. We find that the redox properties of nanocrystalline mp-CZO thin films differ significantly from those of bulk CZO materials reported in the literature and, therefore, propose a defect chemical model of surface regions.

Tensile lattice distortion does not affect oxygen transport in yttria-stabilized zirconia-CeO2 heterointerfaces

Biaxially textured epitaxial thin-film heterostructures of ceria and 8 mol % yttria-stabilized zirconia (8YSZ) were grown using pulsed laser deposition (PLD) with the aim to unravel the effect of the interfacial conductivity on the charge transport properties. Five different samples were fabricated, keeping the total thickness constant (300 nm), but with a different number of heterointerfaces (between 4 and 60). To remove any potential contribution of the deposition substrate to the total conductivity, the heterostructures were grown on (001)-oriented MgO single-crystalline wafers. Layers free of high-angle grain boundaries and with low density of misfit dislocations were obtained, as revealed by X-ray diffraction (XRD) and high-resolution transmission electron microscopy (HR-TEM) analysis. The crystallographic quality of these samples allowed the investigation of their conduction properties, suppressing any transport effects along grain boundaries and/or interfacial dislocation pathways. Electrochemical impedance spectroscopy (EIS) and secondary ion mass spectroscopy (SIMS) measurements showed that for these samples the interfacial conductivity has a negligible effect on the transport properties.

Charge carrier accumulation in lithium fluoride thin films due to Li-ion absorption by titania (100) subsurface

The thermodynamically required redistribution of ions at given interfaces is being paid increased attention. The present investigation of the contact LiF/TiO(2) offers a highly worthwhile example, as the redistribution processes can be predicted and verified. It consists in Li ion transfer from LiF into the space charge zones of TiO(2). We not only can measure the resulting increase of lithium vacancy conductivity in LiF, we also observe a transition from n- to p-type conductivity in TiO(2) in consistency with the generalized space charge model.

Ionic conductivity in oxide heterostructures: the role of interfaces

Rapidly growing attention is being directed to the investigation of ionic conductivity in oxide film heterostructures. The main reason for this interest arises from interfacial phenomena in these heterostructures and their applications. Recent results revealed that heterophase interfaces have faster ionic conduction pathways than the bulk or homophase interfaces. This finding can open attractive opportunities in the field of micro-ionic devices. The influence of the interfaces on the conduction properties of heterostructures is becoming increasingly important with the miniaturization of solid-state devices, which leads to an enhanced interface density at the expense of the bulk. This review aims to describe the main evidence of interfacial phenomena in ion-conducting film heterostructures, highlighting the fundamental and technological relevance and offering guidelines to understanding the interface conduction mechanisms in these structures.

Elastic strain at interfaces and its influence on ionic conductivity in nanoscaled solid electrolyte thin films--theoretical considerations and experimental studies

Ionic transport in solids parallel to grain or phase boundaries is usually strongly enhanced compared to the bulk. Transport perpendicular to an interface (across an interface) is often much slower. Therefore in modern micro- and nanoscaled devices, a severe influence on the ionic/atomic transport properties can be expected due to the high density of interfaces.Transport processes in boundaries of ionic materials are still not understood on an atomic scale. In most of the studies on ionic materials the interfacial transport properties are explained by the influence of space charge regions. Here we discuss the influence of interfacial strain at semicoherent or coherent heterophase boundaries on ionic transport along these interfaces in ionic materials. A qualitative model is introduced for (untilted and untwisted) hetero phase boundaries. For experimental verification, the interfacial oxygen ionic conductivity of different multilayer systems consisting of cubic ZrO(2) stabilised by aliovalent dopands (YSZ, CSZ) and an insulating oxide is investigated as a function of structural mismatch. Recent results on extremely fast ionic conduction in YSZ/SrTiO(3) thin film systems ("colossal ionic concuctivity at interfaces") is discussed from the viewpoint of strain effects.