Parallel Nanoimprint Forming of One-Dimensional Chiral Semiconductor for Strain-Engineered Optical Properties

Thermally Stable Ruthenium Contact for Robust p-Type Tellurium Transistors

Tellurium (Te) is attractive for p-channel transistors due to its high hole mobility. Despite having a low thermal budget suitable for back-end-of-line (BEOL) monolithic integration, the practical realization of Te transistors is hindered by its thermal stability. In this work, we investigate thermal stability for Te thin films grown via scalable thermal evaporation. Our findings identify ruthenium as a more thermally stable contact for p-type Te transistors, capable of withstanding temperatures up to 250 °C. Ruthenium exhibits significantly lower diffusivity in Te compared to other contact metals commonly used such as nickel and palladium. Using the transfer-length method, we measured a contact resistance of 1.25 kΩ·μm at the ruthenium-tellurium interface. Additionally, the incorporation of high-κ ZrO2 encapsulation not only suppresses the sublimation of the Te channel at elevated temperatures but also serves as the gate dielectric in top-gate devices operating at 1 V, achieving an on/off current ratio of 105.

Electronics and Optoelectronics Based on Tellurium

As a true 1D system, group-VIA tellurium (Te) is composed of van der Waals bonded molecular chains within a triangular crystal lattice. This unique crystal structure endows Te with many intriguing properties, including electronic, optoelectronic, thermoelectric, piezoelectric, chirality, and topological properties. In addition, the bandgap of Te exhibits thickness dependence, ranging from 0.31 eV in bulk to 1.04 eV in the monolayer limit. These diverse properties make Te suitable for a wide range of applications, addressing both established and emerging challenges. This review begins with an elaboration of the crystal structures and fundamental properties of Te, followed by a detailed discussion of its various synthesis methods, which primarily include solution phase, and chemical and physical vapor deposition technologies. These methods form the foundation for designing Te-centered devices. Then the device applications enabled by Te nanostructures are introduced, with an emphasis on electronics, optoelectronics, sensors, and large-scale circuits. Additionally, performance optimization strategies are discussed for Te-based field-effect transistors. Finally, insights into future research directions and the challenges that lie ahead in this field are shared.

Chiral Inorganic Nanomaterials for Photo(electro)catalytic Conversion

Chiral inorganic nanomaterials due to their unique asymmetric nanostructures have gradually demonstrated intriguing chirality-dependent performance in photo(electro)catalytic conversion, such as water splitting. However, understanding the correlation between chiral inorganic characteristics and the photo(electro)catalytic process remains challenging. In this perspective, we first highlight the chirality source of inorganic nanomaterials and briefly introduce photo(electro)catalysis systems. Then, we delve into an in-depth discussion of chiral effects exerted by chiral nanostructures and their photo-electrochemistry properties, while emphasizing the emerging chiral inorganic nanomaterials for photo(electro)catalytic conversion. Finally, the challenges and opportunities of chiral inorganic nanomaterials for photo(electro)catalytic conversion are prospected. This perspective provides a comprehensive overview of chiral inorganic nanomaterials and their potential in photo(electro)catalytic conversion, which is beneficial for further research in this area.

Circularly Polarized Light-Enabled Chiral Nanomaterials: From Fabrication to Application

For decades, chiral nanomaterials have been extensively studied because of their extraordinary properties. Chiral nanostructures have attracted a lot of interest because of their potential applications including biosensing, asymmetric catalysis, optical devices, and negative index materials. Circularly polarized light (CPL) is the most attractive source for chirality owing to its high availability, and now it has been used as a chiral source for the preparation of chiral matter. In this review, the recent progress in the field of CPL-enabled chiral nanomaterials is summarized. Firstly, the recent advancements in the fabrication of chiral materials using circularly polarized light are described, focusing on the unique strategies. Secondly, an overview of the potential applications of chiral nanomaterials driven by CPL is provided, with a particular emphasis on biosensing, catalysis, and phototherapy. Finally, a perspective on the challenges in the field of CPL-enabled chiral nanomaterials is given.

Large-Scale Ultrafast Strain Engineering of CVD-Grown Two-Dimensional Materials on Strain Self-Limited Deformable Nanostructures toward Enhanced Field-Effect Transistors

Strain engineering of 2D materials is capable of tuning the electrical and optical properties of the materials without introducing additional atoms. Here, a method for large-scale ultrafast strain engineering of CVD-grown 2D materials is proposed. Locally nonuniform strains are introduced through the cooperative deformation of materials and metal@metal oxide nanoparticles through cold laser shock. The tensile strain of MoS₂ changes and the band gap decreases after laser shock. The mechanism of the ultrafast straining is investigated by MD simulations. MoS₂ FETs were fabricated, and the field-effect mobility of devices could be increased from 1.9 to 44.5 cm² V^-1 s^-1 by adjusting the strain level of MoS₂. This is currently the maximum value of MoS₂ FETs grown by CVD with SiO₂ as the dielectric. As a large-scale and ultrafast manufacturing method, laser shock provides a universal strategy for large-scale adjustment of 2D material strain, which will help to promote the manufacturing of 2D nanoelectronic devices.

Growth of Tellurium Nanobelts on h-BN for p-type Transistors with Ultrahigh Hole Mobility

The lack of stable p-type van der Waals (vdW) semiconductors with high hole mobility severely impedes the step of low-dimensional materials entering the industrial circle. Although p-type black phosphorus (bP) and tellurium (Te) have shown promising hole mobilities, the instability under ambient conditions of bP and relatively low hole mobility of Te remain as daunting issues. Here we report the growth of high-quality Te nanobelts on atomically flat hexagonal boron nitride (h-BN) for high-performance p-type field-effect transistors (FETs). Importantly, the Te-based FET exhibits an ultrahigh hole mobility up to 1370 cm² V^-1 s^-1 at room temperature, that may lay the foundation for the future high-performance p-type 2D FET and metal-oxide-semiconductor (p-MOS) inverter. The vdW h-BN dielectric substrate not only provides an ultra-flat surface without dangling bonds for growth of high-quality Te nanobelts, but also reduces the scattering centers at the interface between the channel material and the dielectric layer, thus resulting in the ultrahigh hole mobility .