Versatile and Scalable Strategy To Grow Sol-Gel Derived 2H-MoS2 Thin Films with Superior Electronic Properties: A Memristive Case

Spatially confined synthesis of large-sized MoS2nanosheets in molten KSCN toward efficient hydrogen evolution

Low-temperature KSCN molten salt is a promising technique to synthesize defect-rich MoS2catalysts for hydrogen evolution reaction (HER). However, owing to the fast ion diffusion rate for rapid crystal growth, the resultant catalysts show a morphology of microsphere, which aggregates from MoS2nanosheets, to suppress the catalytic performance. In this work, large-sized few-layer MoS2nanosheets are synthesized via a spatial confinement strategy by adding inert NaCl into the KSCN molten salt. With the NaCl spacer to physically block the long-distance ion diffusion and isolate the chemical reaction, the MoS2nucleation and subsequent crystal growth could be controlled, guiding the nanosheets to grow along the narrow gap between the NaCl crystals to avoid aggregation. As a result, ultrathin MoS2nanosheets with a large geometry size are constructed. Profiting from the architecture to expose active sites and boost charge transfer kinetics, the large-sized few-layer MoS2nanosheets exhibit an impressive HER performance, showing a smallη10of 160 mV and a low Tafel slope of 53 mV dec-1with excellent stability. This work provides not only an efficient HER catalyst but also a facile spatial confinement technique to design and synthesize a large spectrum of transition metal sulfides for broad uses.

Two-dimensional material-based memristive devices for alternative computing

Two-dimensional (2D) materials have emerged as promising building blocks for next generation memristive devices, owing to their unique electronic, mechanical, and thermal properties, resulting in effective switching mechanisms for charge transport. Memristors are key components in a wide range of applications including neuromorphic computing, which is becoming increasingly important in artificial intelligence applications. Crossbar arrays are an important component in the development of hardware-based neural networks composed of 2D materials. In this paper, we summarize the current state of research on 2D material-based memristive devices utilizing different switching mechanisms, along with the application of these devices in neuromorphic crossbar arrays. Additionally, we discuss the challenges and future directions for the field.

From Bulk Molybdenum Disulfide (MoS2) to Suspensions of Exfoliated MoS2 in an Aqueous Medium and Their Applications

Two-dimensional (2D) layered materials like graphene, transition-metal dichalcogenides (TMDs), boron nitrides, etc., exhibit unique and fascinating properties, such as high surface-to-volume ratio, inherent mechanical flexibility and robustness, tunable bandgap, and high carrier mobility, which makes them an apt candidate for flexible electronics with low consumption of power. Because of these properties, they are in tremendous demand for advancement in energy, environmental, and biomedical sectors developed through various technologies. The production and scalability of these materials must be sustainable and ecofriendly to utilize these unique properties in the real world. Here, in this current review, we review molybdenum disulfide (MoS2 nanosheets) in detail, focusing on exfoliated MoS2 in water and the applicability of aqueous MoS2 suspensions in various fields. The exfoliation of MoS2 results in the formation of single or few-layered MoS2. Therefore, this Review focuses on the few layers of exfoliated MoS2 that have the additional properties of 2D layered materials and higher excellent compatibility for integration than existing conventional Si tools. Hence, a few layers of exfoliated MoS2 are widely explored in biosensing, gas sensing, catalysis, photodetectors, energy storage devices, a light-emitting diode (LED), adsorption, etc. This review covers the numerous methodologies to exfoliate MoS2, focusing on the various published methodologies to obtain nanosheets of MoS2 from water solutions and their use.

Efficient Multiple Exciton Generation in Monolayer MoS2

Utilization of the excess energy of photoexcitation that is otherwise lost as thermal effects can improve the efficiency of next-generation light-harvesting devices. Multiple exciton generation (MEG) in semiconducting materials yields two or more excitons by absorbing a single high-energy photon, which can break the Shockley-Queisser limit for the conversion efficiency of photovoltaic devices. Recently, monolayer transition metal dichalcogenides (TMDs) have emerged as promising light-harvesting materials because of their high absorption coefficient. Here, we report efficient MEGs with low threshold energy and high (86%) efficiency in a van der Waals (vdW) layered material, MoS₂. Through different experimental approaches, we demonstrate the signature of exciton multiplication and discuss the possible origin of decisive MEG in monolayer MoS₂. Our results reveal that vdW-layered materials could be a potential candidate for developing mechanically flexible and highly efficient next-generation solar cells and photodetectors.

Wafer-scale solution-processed 2D material analog resistive memory array for memory-based computing

Realization of high-density and reliable resistive random access memories based on two-dimensional semiconductors is crucial toward their development in next-generation information storage and neuromorphic computing. Here, wafer-scale integration of solution-processed two-dimensional MoS2 memristor arrays are reported. The MoS2 memristors achieve excellent endurance, long memory retention, low device variations, and high analog on/off ratio with linear conductance update characteristics. The two-dimensional nanosheets appear to enable a unique way to modulate switching characteristics through the inter-flake sulfur vacancies diffusion, which can be controlled by the flake size distribution. Furthermore, the MNIST handwritten digits recognition shows that the MoS2 memristors can operate with a high accuracy of >98.02%, which demonstrates its feasibility for future analog memory applications. Finally, a monolithic three-dimensional memory cube has been demonstrated by stacking the two-dimensional MoS2 layers, paving the way for the implementation of two memristor into high-density neuromorphic computing system.

Transition Metal Dichalcogenides [MX2] in Photocatalytic Water Splitting

The quest for a clean, renewable and sustainable energy future has been highly sought for by the scientific community over the last four decades. Photocatalytic water splitting is a very promising technology to proffer a solution to present day environmental pollution and energy crises by generating hydrogen fuel through a “green route” without environmental pollution. Transition metal dichalcogenides (TMDCs) have outstanding properties which make them show great potential as effective co-catalysts with photocatalytic materials such as TiO2, ZnO and CdS for photocatalytic water splitting. Integration of TMDCs with a photocatalyst such as TiO2 provides novel nanohybrid composite materials with outstanding characteristics. In this review, we present the current state of research in the application of TMDCs in photocatalytic water splitting. Three main aspects which consider their properties, advances in the synthesis routes of layered TMDCs and their composites as well as their photocatalytic performances in the water splitting reaction are discussed. Finally, we raise some challenges and perspectives in their future application as materials for water-splitting photocatalysts.

MoS2 Based Photodetectors: A Review

Photodetectors based on transition metal dichalcogenides (TMDs) have been widely reported in the literature and molybdenum disulfide (MoS2) has been the most extensively explored for photodetection applications. The properties of MoS2, such as direct band gap transition in low dimensional structures, strong light-matter interaction and good carrier mobility, combined with the possibility of fabricating thin MoS2 films, have attracted interest for this material in the field of optoelectronics. In this work, MoS2-based photodetectors are reviewed in terms of their main performance metrics, namely responsivity, detectivity, response time and dark current. Although neat MoS2-based detectors already show remarkable characteristics in the visible spectral range, MoS2 can be advantageously coupled with other materials to further improve the detector performance Nanoparticles (NPs) and quantum dots (QDs) have been exploited in combination with MoS2 to boost the response of the devices in the near ultraviolet (NUV) and infrared (IR) spectral range. Moreover, heterostructures with different materials (e.g., other TMDs, Graphene) can speed up the response of the photodetectors through the creation of built-in electric fields and the faster transport of charge carriers. Finally, in order to enhance the stability of the devices, perovskites have been exploited both as passivation layers and as electron reservoirs.

Synthesis of MoS2 Thin Film by Ionized Jet Deposition: Role of Substrate and Working Parameters

The lack of scalable synthesis of transition metal dichalcogenides, such as molybdenum disulfide (MoS2), has proved to be a significant bottleneck in realization of fundamental devices and has hindered the commercialization of these materials in technologically relevant applications. In this study, a cost-efficient and versatile thin-film fabrication technique based on ionized jet deposition (IJD), i.e., a technique potentially providing high processing efficiency and scalability, is used to grow MoS2 thin films on silicon substrates. The operating conditions of IJD were found to influence mainly the ablation efficiency of the target and only slightly the quality of the deposited MoS2 thin film. All as-deposited films show chemical properties typical of MoS2 with an excess of free, elemental sulfur that can be removed by post-deposition annealing at 300–400 °C, which also promotes MoS2 crystallization. The formation of an interface comprised of several silicon oxide species was observed between MoS2 and the silicon substrate, which is suggested to originate from etching and oxidizing processes of dissociated water molecules in the vacuum chamber during growth. The present study paves the way to further design and improve the IJD approach for TMDC-based devices and other relevant technological applications.

Efficient Photoelectrochemical Water Splitting by Tailoring MoS2/CoTe Heterojunction in a Photoelectrochemical Cell

Solar energy conversion through photoelectrochemical water splitting (PEC) is an upcoming promising technique. MoS2/CoTe heterostructures were successfully prepared and utilized for PEC studies. MoS2 and CoTe were prepared by a hydrothermal method which were then ultrasonicated with wt. % ratios of 1:3, 1:1 and 3:1 to prepare MoS2/CoTe (1:3), MoS2/CoTe (1:1) and MoS2/CoTe (3:1) heterostructure, respectively. The pure materials and heterostructures were characterized by XRD, UV-vis-DRS, SEM, XPS, PL and Raman spectroscopy. Photoelectrochemical measurements were carried out by linear sweep voltammetry and electrochemical impedance spectroscopic measurements. A maximum photocurrent density of 2.791 mA/cm2 was observed for the MoS2/CoTe (1:1) heterojunction which is about 11 times higher than the pristine MoS2. This current density was obtained at an applied bias of 0.62 V vs. Ag/AgCl (1.23 V vs. RHE) under the light intensity of 100 mW/cm2 of AM 1.5G illumination. The enhanced photocurrent density may be attributed to the efficient electron-hole pair separation. The solar to hydrogen conversion efficiency was found to be 0.84% for 1:1 MoS2/CoTe, signifying the efficient formation of the p-n junction. This study offers a novel heterojunction photocatalyst, for PEC water splitting.