Designing Isoelectronic Counterparts to Layered Group V Semiconductors

DFT-Based Mechanistic Exploration and Application in Photocatalytic Heterojunctions

Density functional theory (DFT) is one of the most widely used methods in the field of computational materials and has become an important research method for photocatalytic heterojunctions. Based on the research progress of DFT in the field of photocatalytic heterojunctions, this review introduces three kinds of heterojunction modeling in detail as well as the problems encountered in the construction process and the solutions. It provides a comprehensive review of the calculation methods of important parameters related to photocatalytic heterojunctions. Comparison, analysis, and discussion were conducted on some functional selections and calculation results based on experimental data. Finally, the limitations and shortcomings of DFT in the field of photocatalytic heterojunctions are pointed out. This review will provide valuable guidance for the calculation and analysis of the performance of photocatalytic heterojunctions and help promote the wider application of DFT in the field of photocatalysis.

Dimerization Effects and Negative Strain Energy in Silicon Monosulfide Nanotubes

We report on the construction and characterization of silicon monosulfide nanotubes that were obtained by rolling up two-dimensional materials isoelectronic to phosphorene in the recently discovered layered Pmma and β phases. We relaxed and studied the nanotube structures using computational methods within density functional theory (DFT). We found that the nanotubes with a thick Pmma layer remain stable at room temperature, and their electronic properties depend on their diameters. Small-diameter nanotubes display metallic character, while nanotubes with increasing diameter show semiconducting ground states due to the dimerization in the silicon-silicon distances that opens a gap, leading to interesting optical properties in the near-infrared region. Furthermore, we discovered β SiS monolayer nanotubes having negative strain energies, similar to the well-known imogolite inorganic nanotubes. The combined thermal stability, compelling optical properties, and diverse applications of these silicon monosulfide nanotubes underscore the demand for novel synthesis methods to fully explore their potential in various fields.

Computational Design of α-AsP/γ-AsP Vertical Two-Dimensional Homojunction for Photovoltaic Applications

Based on first-principles calculations, we design a α-AsP/γ-AsP homojunction with minimum lattice distortion. It is found that the α-AsP/γ-AsP homojunction has an indirect bandgap with an intrinsic type-II band alignment. The proposed α-AsP/γ-AsP homojunction exhibits high optical absorption of 1.6×106 cm−1 along the zigzag direction. A high power conversion efficiency (PCE) of 21.08% is achieved in the designed α-AsP/γ-AsP homojunction, which implies it has potential applications in solar cells. Under 4% in-plane axial strain along the zigzag direction, a transition from indirect band gap to direct band gap is found in the α-AsP/γ-AsP homojunction. Moreover, the intrinsic type-II band alignment can be tuned to type-I band alignment under in-plane strain, which is crucial for its potential application in optical devices.

Sensitivity Improvement of Surface Plasmon Resonance Biosensors with GeS-Metal Layers

Surface plasmon resonance (SPR) biosensors, with germanium sulfide (GeS) as a sensitive medium and Al/Ag/Au as the metal layers, are reported as we aim to improve the sensitivities of the biosensors. The sensitivities in conventional SPR biosensors, consisting of only metal Al, Ag, and Au layers, are 111°/RIU, 117°/RIU, 139°/RIU, respectively. Additionally, these sensitivities of the SPR biosensors based on the GeS-Al, GeS-Ag, and GeS-Au layers have an obvious improvement, resultant of 320°/RIU, 295°/RIU, and 260°/RIU, respectively. We also discuss the changing sensing medium GeS thickness using layer number to describe the scenario which brought about the diversification on the figure of merit (FOM) and optical absorption (OA) performance of the biosensors. These biosensors show obvious improvement of sensitivity and have strong SPR excitation to analytes; we believe that these kind biosensors could find potential applications in biological detection, chemical examination, and medical diagnosis.

Effect of adsorption and substitutional B doping at different concentrations on the electronic and magnetic properties of a BeO monolayer: a first-principles study

The 2D form of the BeO sheet has been successfully prepared (Hui Zhang et al., ACS Nano, 2021, 15, 2497). Motivated by these exciting experimental results on the 2D layered BeO structure, we studied the effect of the adsorption of B atoms on BeO (B@BeO) and substitutional B atoms (B-BeO) at the Be site at different B concentrations. We investigated the structural stability and the mechanical, electronic, magnetic, and optical properties of the mentioned structures using first-principles calculations. We found out that hexagonal BeO monolayers with adsorbed and dopant B atoms have different mechanical stabilities at different concentrations. B@BeO and B-BeO monolayers are brittle structures, and B@BeO structures are more rigid than B-BeO monolayers (at the same B concentration). The adsorption and the formation energy per B atom decrease as the B concentration increases. In comparison, the work function increases when increasing the B concentration. The work function of B@BeO is higher than the corresponding value of B-BeO (at the same B concentration). The magnetic moment linearly increases as the B concentration increases. BeO is a semiconductor with an indirect bandgap of 5.3 eV. The B@BeO and B-BeO structures are semiconductors, except for 3B-BeO (14.2% doped concentration), which is a metal. The bandgap is 1.25 eV for most of the adsorbed atom concentrations. For B-BeO, the bandgap decreases to zero at a concentration of 14.2%. The bandgap of the B-BeO monolayer at different B concentrations is smaller than the corresponding values of the B@BeO monolayer, which indicates that B substitutional doping has a greater effect on the electronic structure of the BeO monolayer than B adsorption doping. We investigated the optical properties, including the dielectric function and absorption coefficient. The results indicate good optical absorption in the range of infrared and ultraviolet energies for the B adsorbed and doped BeO monolayer.

Anisotropic and High-Mobility C3S Monolayer as a Photocatalyst for Water Splitting

Taking into account the high conductivity and stability of carbon materials, such as graphene, and the strong polar covalent bonding character of main-group compounds, we explore potential 2D materials in the C-S binary system through first-principles structure search calculations. Herein, a hitherto unknown semiconducting C₃S monolayer is identified, consisting of well-known n-biphenyl and S atom linked benzenes, exhibiting an obvious direction-dependent atomic arrangement. Thus, it exhibits anisotropic mechanical properties and carrier mobility. Its electron mobility reaches 2.14 × 10⁴ cm² V^-1 s^-1 in the b direction, along which n-biphenyl units are arranged, and is much higher than that in the well-used MoS₂ monolayer and black phosphorus. Meanwhile, the C₃S monolayer has high optical absorption coefficients (10⁵ cm^-1), high thermal and dynamical stabilities, and a moderate ability to split water. All these desirable properties make the C₃S monolayer a promising candidate for applications in novel optoelectronic devices.

δ-SnS: An Emerging Bidirectional Auxetic Direct Semiconductor with Desirable Carrier Mobility and High-Performance Catalytic Behavior toward the Water-Splitting Reaction

We propose a novel two-dimensional SnS allotrope (monolayer δ-SnS) based on an auxetic δ-phosphorene configuration using first-principles calculations. This monolayer appears to have outstanding stability as revealed by its energetic, kinetic, thermodynamic, and mechanic calculations, and it can withstand temperatures as high as 900 K. Monolayer δ-SnS is a wide direct-bandgap (2.354 eV) semiconductor, and its electron mobility is as high as ∼1.25 × 10³ cm² V^-1 s ^-1, higher than that of monolayer KTlO (∼450 cm² V^-1 s^-1) and MoS₂ (∼200 cm² V^-1 s^-1). Optical absorption spectra, reaching up to the order of ∼10⁵ cm^-1, are obviously excellent in the visible-light region, suggesting efficient harvesting of solar radiation. Because of its unique atomic motif, monolayer δ-SnS presents an unusual bidirectional auxetic effect: a high negative in-plane Poisson's ratio (-0.048 and -0.068), which is larger than those for many recently reported two-dimensional auxetic materials, e.g., black phosphorene (-0.027), borophene (-0.04), and monolayer penta-B₂N₄ (-0.02). The bandgap and band edge can be substantially manipulated under strain to meet the requirement of the water-splitting reaction. Particularly, when pH = 7, suitable band-edge alignments and small overpotentials of the photocatalytic OER (oxygen evolution reaction) and HER (hydrogen evolution reaction) appear, endowing monolayer δ-SnS with great potential as an efficient visible-light-driven bifunctional photocatalyst for water splitting.

First-principles study of the electronic structures and optical and photocatalytic performances of van der Waals heterostructures of SiS, P and SiC monolayers

Designing van der Waals (vdW) heterostructures of two-dimensional materials is an efficient way to realize amazing properties as well as open up opportunities for applications in solar energy conversion, nanoelectronic and optoelectronic devices. The electronic structures and optical and photocatalytic properties of SiS, P and SiC van der Waals (vdW) heterostructures are investigated by (hybrid) first-principles calculations. Both binding energy and thermal stability spectra calculations confirm the stability of these heterostructures. Similar to the corresponding parent monolayers, SiS–P (SiS–SiC) vdW heterostructures are found to be indirect type-II bandgap semiconductors. Furthermore, absorption spectra are calculated to understand the optical behavior of these systems, where the lowest energy transitions lie in the visible region. The valence and conduction band edges straddle the standard redox potentials of SiS, P and SiC vdW heterostructures, making them promising candidates for water splitting in acidic solution.

The electronic structures and optical and photocatalytic properties of SiS, P and SiC van der Waals (vdW) heterostructures are investigated by (hybrid) first-principles calculations.

2D Silicon-Based Semiconductor Si2 Te3 toward Broadband Photodetection

Silicon-based semiconductor materials dominate modern technology for more than half a century with extraordinary electrical-optical performance and mutual processing compatibility. Now, 2D materials have rapidly established themselves as prospective candidates for the next-generation semiconductor industry because of their novel properties. Considering chemical and processing compatibility, silicon-based 2D materials possess significant advantages in integrating with silicon. Here, a systematic study is reported on the structural, electrical, and optical performance of silicon telluride (Si₂ Te₃ ) 2D material, a IV-VI silicon-based semiconductor with a layered structure. The ultrawide photoluminescence (PL) spectra in the range of 550-1050 nm reveals the intrinsic defects in Si₂ Te₃ . The Si₂ Te₃ -based field-effect transistors (FETs) and photodetectors show a typical p-type behavior and a remarkable broadband spectral response in the range of 405-1064 nm. Notably, the photoresponsivity and detectivity of the photodetector device with 13.5 nm in thickness and upon 405 nm illumination can reach up to 65 A W^-1 and 2.81 × 10¹² Jones, respectively, outperforming many traditional broadband photodetectors. It is believed this work will excite interests in further exploring the practical application of 2D silicon-based materials in the field of optoelectronics.

Polymorphism in Post-Dichalcogenide Two-Dimensional Materials

Two-dimensional (2D) materials exhibit a wide range of atomic structures, compositions, and associated versatility of properties. Furthermore, for a given composition, a variety of different crystal structures (i.e., polymorphs) can be observed. Polymorphism in 2D materials presents a fertile landscape for designing novel architectures and imparting new functionalities. The objective of this Review is to identify the polymorphs of emerging 2D materials, describe their polymorph-dependent properties, and outline methods used for polymorph control. Since traditional 2D materials (e.g., graphene, hexagonal boron nitride, and transition metal dichalcogenides) have already been studied extensively, the focus here is on polymorphism in post-dichalcogenide 2D materials including group III, IV, and V elemental 2D materials, layered group III, IV, and V metal chalcogenides, and 2D transition metal halides. In addition to providing a comprehensive survey of recent experimental and theoretical literature, this Review identifies the most promising opportunities for future research including how 2D polymorph engineering can provide a pathway to materials by design.

Group 11 Transition-Metal Halide Monolayers: High Promises for Photocatalysis and Quantum Cutting

Recently, two-dimensional (2D) metal halides have triggered an enormous interest for their tunable mechanical, electronic, magnetic, and topological properties, greatly enriching the family of 2D materials. Here, based on first-principles calculations, we report a systematic study of group 11 transition-metal halide MX (M = Cu, Ag, Au; X = Cl, Br, I) monolayers. Among them, CuBr, CuI, AgBr, and AgI monolayers exhibit high thermodynamic, dynamic, and mechanic stability. The four stable monolayers have a direct band gap of ∼3.12-3.36 eV and possess high carrier mobility (∼10³ cm² V^-1 s^-1), suggestive of future photocatalysts for water splitting applications. What is more, the simulations of optical properties confirm that the stable MX monolayers hold the potential for further applications in ultraviolet optical devices and quantum cutting solar materials.

Recent Advances in 2D Metal Monochalcogenides

The family of emerging low-symmetry and structural in-plane anisotropic two-dimensional (2D) materials has been expanding rapidly in recent years. As an important emerging anisotropic 2D material, the black phosphorene analog group IVA-VI metal monochalcogenides (MMCs) have been surged recently due to their distinctive crystalline symmetries, exotic in-plane anisotropic electronic and optical response, earth abundance, and environmentally friendly characteristics. In this article, the recent research advancements in the field of anisotropic 2D MMCs are reviewed. At first, the unique wavy crystal structures together with the optical and electronic properties of such materials are discussed. The Review continues with the various methods adopted for the synthesis of layered MMCs including micromechanical and liquid phase exfoliation as well as physical vapor deposition. The last part of the article focuses on the application of the structural anisotropic response of 2D MMCs in field effect transistors, photovoltaic cells nonlinear optics, and valleytronic devices. Besides presenting the significant research in the field of this emerging class of 2D materials, this Review also delineates the existing limitations and discusses emerging possibilities and future prospects.

Liquid-Phase Exfoliated GeSe Nanoflakes for Photoelectrochemical-Type Photodetectors and Photoelectrochemical Water Splitting

Photoelectrochemical (PEC) systems represent powerful tools to convert electromagnetic radiation into chemical fuels and electricity. In this context, two-dimensional (2D) materials are attracting enormous interest as potential advanced photo(electro)catalysts and, recently, 2D group-IVA metal monochalcogenides have been theoretically predicted to be water splitting photocatalysts. In this work, we use density functional theory calculations to theoretically investigate the photocatalytic activity of single-/few-layer GeSe nanoflakes for both the hydrogen evolution reaction (HER) and the oxygen evolution reaction (OER) in pH conditions ranging from 0 to 14. Our simulations show that GeSe nanoflakes with different thickness can be mixed in the form of nanoporous films to act as nanoscale tandem systems, in which the flakes, depending on their thickness, can operate as HER- and/or OER photocatalysts. On the basis of theoretical predictions, we report the first experimental characterization of the photo(electro)catalytic activity of single-/few-layer GeSe flakes in different aqueous media, ranging from acidic to alkaline solutions: 0.5 M H2SO4 (pH 0.3), 1 M KCl (pH 6.5), and 1 M KOH (pH 14). The films of the GeSe nanoflakes are fabricated by spray coating GeSe nanoflakes dispersion in 2-propanol obtained through liquid-phase exfoliation of synthesized orthorhombic (Pnma) GeSe bulk crystals. The PEC properties of the GeSe nanoflakes are used to design PEC-type photodetectors, reaching a responsivity of up to 0.32 AW-1 (external quantum efficiency of 86.3%) under 455 nm excitation wavelength in acidic electrolyte. The obtained performances are superior to those of several self-powered and low-voltage solution-processed photodetectors, approaching that of self-powered commercial UV-Vis photodetectors. The obtained results inspire the use of 2D GeSe in proof-of-concept water photoelectrolysis cells.

A nano-lateral heterojunction of selenium-coated tellurium for infrared-band soliton fiber lasers

In this work, ultrafast fiber lasers based on 2D selenium-coated tellurium nanosheets in the infrared band are reported. 2D selenium-coated tellurium as a mode locker is shown with broadband saturable absorption and is capable of supporting ultra-stable pulse trains with several hundred-femtosecond pulse widths in the laser cavity. In particular, the as-fabricated 2D selenium-coated tellurium based fiber laser source operating in the communication band (1.5 μm) exhibits the vector pulse property, which supports the study of the vector soliton in ultrafast fiber lasers. The pulse duration of vector solitons is as short as 800 fs. The 2D selenium-coated tellurium is also available for a mode locked fiber laser operating at 1 μm. The laser oscillator has a pulse duration of several picoseconds and the pulse train is ultra-stable after an amplification to 100 mW, which is a promising seed source in the chirped-pulse amplification system in the future.

Electronic, optical and thermoelectric properties of boron-doped nitrogenated holey graphene

We employ first principles calculations to investigate the electronic, optical, and thermoelectric properties of ten boron-doped nitrogenated holey graphene (NHG) monolayers. We find that most of the proposed structures remain stable during ab initio molecular dynamics simulations, in spite of their increased formation energies. Density functional theory calculations employing a hybrid functional predict band gaps ranging from 0.73 eV to 2.30 eV. In general, we find that boron doping shifts optical absorption towards the visible spectrum, and also reduces light reflection in this region. On the other hand, the magnitude of optical absorption coefficients are reduced. Regarding the thermoelectric properties, we predict that boron doping can enhance the figure of merit ZT of NHG by up to 55%. Our results indicate that boron-doped NHG monolayers may find application in solar cells and thermoelectric devices.

Recent advances in two-dimensional materials and their nanocomposites in sustainable energy conversion applications

Two-dimensional (2D) materials have a wide platform in research and expanding nano- and atomic-level applications. This study is motivated by the well-established 2D catalysts, which demonstrate high efficiency, selectivity and sustainability exceeding that of classical noble metal catalysts for the oxygen reduction reaction (ORR), oxygen evolution reaction (OER), and/or hydrogen evolution reaction (HER). Nowadays, the hydrogen evolution reaction (HER) in water electrolysis is crucial for the cost-efficient production of a pure hydrogen fuel. We will also discuss another important point related to electrochemical carbon dioxide and nitrogen reduction (ECR and N2RR) in detail. In this review, we mainly focused on the recent progress in the fuel cell technology based on 2D materials, including graphene, transition metal dichalcogenides, black phosphorus, MXenes, metal-organic frameworks, and metal oxide nanosheets. First, the basic attributes of the 2D materials were described, and their fuel cell mechanisms were also summarized. Finally, some effective methods for enhancing the performance of the fuel cells based on 2D materials were also discussed, and the opportunities and challenges of 2D material-based fuel cells at the commercial level were also provided. This review can provide new avenues for 2D materials with properties suitable for fuel cell technology development and related fields.

Two-dimensional NaxSiS as a promising anode material for rechargeable sodium-based batteries: ab initio material design

The rapidly rising demand for energy storage systems presents an imperative need to develop sodium-ion batteries with high energy density, high conductivity, and low barrier energy. In this work, we present a Density Functional study on the properties of two-dimensional NaxSiS as a promising anode material for rechargeable sodium-ion batteries. Energetically stable structures of Na-adsorbed silicene sulfide NaxSiS with various Na contents were explored. It is found that the adsorption energy of a Na atom is higher than -0.4 eV and it decreases with increasing Na content. The electronic structure of pristine silicene sulfide shows semiconductor behaviour with a bandgap of 0.99 eV, while the Na-adsorbed SiS exhibits metallic characteristics. The highest theoretical capacity of 187.2 mA h g-1, which is higher than that of well-known two dimensional materials, is found in the fully intercalated phase of SiS Na0.5SiS which corresponds to per side layer. Furthermore, Na ions can diffuse along two typical pathways on the surface of SiS with a small barrier of 183 meV which is much smaller than that of the two dimensional LixSiS, NaxTiS2, and NaxMoS2. All these characteristics suggest that silicene sulfide SiS can be expected to be a promising anode material for sodium ion batteries.

Quantum Phonon Transport in Nanomaterials: Combining Atomistic with Non-Equilibrium Green's Function Techniques

A crucial goal for increasing thermal energy harvesting will be to progress towards atomistic design strategies for smart nanodevices and nanomaterials. This requires the combination of computationally efficient atomistic methodologies with quantum transport based approaches. Here, we review our recent work on this problem, by presenting selected applications of the PHONON tool to the description of phonon transport in nanostructured materials. The PHONON tool is a module developed as part of the Density-Functional Tight-Binding (DFTB) software platform. We discuss the anisotropic phonon band structure of selected puckered two-dimensional materials, helical and horizontal doping effects in the phonon thermal conductivity of boron nitride-carbon heteronanotubes, phonon filtering in molecular junctions, and a novel computational methodology to investigate time-dependent phonon transport at the atomistic level. These examples illustrate the versatility of our implementation of phonon transport in combination with density functional-based methods to address specific nanoscale functionalities, thus potentially allowing for designing novel thermal devices.

Energy, Phonon, and Dynamic Stability Criteria of Two-Dimensional Materials

First-principles calculations have become a powerful tool to exclude the Edisonian approach in search of novel two-dimensional (2D) materials. However, no universal first-principles criteria to examine the realizability of hypothetical 2D materials have been established in the literature yet. Because of this, and as the calculations are always performed in an artificial simulation environment, one can unintentionally study compounds that do not exist in experiments. Although investigations of physics and chemistry of unrealizable materials can provide some fundamental knowledge, the discussion of their applications can mislead experimentalists for years and increase the gap between experimental and theoretical research. By analyzing energy convex hull, phonon spectra, and structure evolution during ab initio molecular dynamics simulations for a range of synthesized and recently proposed 2D materials, we construct energy, phonon, and dynamic stability filters that need to be satisfied before proposing novel 2D compounds. We demonstrate the power of the suggested filters for several selected 2D systems, revealing that some of them cannot be ever realized experimentally.

2D selenium allotropes from first principles and swarm intelligence

Combining the particle-swarm optimization method with first-principles calculations, we explore a new category of two-dimensional (2D) monolayers composed of solely the element selenium. Three stable structures are screened from outputs of crystal search computations, namely T-Se (1T-MoS₂-like), C-Se (tiled 1D helical chain), and S-Se (square structure). Phonon calculations, as well as formation energy calculations have been performed to confirm the stability of the three phases. The electronic structure calculations show that both T-Se and C-Se are indirect-band-gap semiconductors, with gap values of 1.11 eV and 2.64 eV respectively when using the hybrid HSE06 functional. In particular, C-Se has a centrosymmetry-breaking structure which provides a spontaneous in-plane ferroelectric polarization of about 2.68  ×  10^-10 C m^-1 per layer. Interestingly, S-Se has a Dirac cone that can open up a band gap of 0.11 eV if spin-orbit coupling is included. The tilted Dirac cone of S-Se shows anisotropic band dispersion as characterized with different Fermi velocities of 1.26  ×  10⁶ and 0.24  ×  10⁶ m s^-1 around the Dirac point. Our works enrich the family of 2D materials of selenium allotropes and show that their versatile properties could give rise to potential application in various fields.

Designing a Novel Monolayer β-CSe for High Performance Photovoltaic Device: An Isoelectronic Counterpart of Blue Phosphorene

Using the first-principles method, an unmanufactured structure of blue-phosphorus-like monolayer CSe (β-CSe) was predicted to be stable. Slightly anisotropic mechanical characteristics in β-CSe sheet were discovered: it can endure an ultimate stress of 5.6 N/m at 0.1 along an armchair direction, and 5.9 N/m at 0.14 along a zigzag direction. A strain-sensitive transport direction was found in β-CSe, since β-CSe, as an isoelectronic counterpart of blue phosphorene (β-P), also possesses a wide indirect bandgap that is sensitive to the in-plane strain, and its carrier effective mass is strain-dependent. Its indirect bandgap character is robust, except that armchair-dominant strain can drive the indirect-direct transition. We designed a heterojunction by the β-CSe sheet covering α-CSe sheet. The band alignment of the α-CSe/β-CSe interface is a type-II van der Waals p-n heterojunction. An appreciable built-in electric field across the interface, which is caused by the charges transfering from β-CSe slab to α-CSe, renders energy bands bending, and it makes photo-generated carriers spatially well-separated. Accordingly, as a metal-free photocatalyst, α-CSe/β-CSe heterojunction was endued an enhanced solar-driven redox ability for photocatalytic water splitting via lessening the electron-hole-pair recombination. This study provides a fundamental insight regarding the designing of the novel structural phase for high-performance light-emitting devices, and it bodes well for application in photocatalysis.

Highly anisotropic thermoelectric properties of carbon sulfide monolayers

Strain engineering applied to carbon monosulphide monolayers allows to control the bandgap, controlling electronic and thermoelectric responses. Herein, we study the semiconductor-metal phase transition of this layered material driven by strain control on the basis of first-principles calculations. We consider uniaxial and biaxial tensile strain and we find a highly anisotropic electronic and thermoelectonic responses depending on the direction of the applied strain. Our results indicate that strain-induced response could be an effective method to control the electronic response and the thermoelectric performance.

Strain Tunable Bandgap and High Carrier Mobility in SiAs and SiAs2 Monolayers from First-Principles Studies

Searching for new stable free-standing atomically thin two-dimensional (2D) materials is of great interest in the fundamental and practical aspects of contemporary material sciences. Recently, the synthesis of layered SiAs single crystals has been realized, which indicates that their few layer structure can be mechanically exfoliated. Performing a first-principles density functional theory calculations, we proposed two dynamically and thermodynamically stable semiconducting SiAs and SiAs₂ monolayers. Band structure calculation reveals that both of them exhibit indirect band gaps and an indirect to direct band even to metal transition are found by application of strain. Moreover, we find that SiAs and SiAs₂ monolayers possess much higher carrier mobility than MoS₂ and display anisotropic transportation like the black phosphorene, rendering them potential application in optoelectronics. Our works pave a new route at nanoscale for novel functionalities of optical devices.

Atomic structure and electronic properties of A2B2XY (A = Si-Pb, B = Cl-I, and XY = PN and SiS) inorganic double helices: first principles calculations

We study the structural stability and electronic properties of new classes of DNA-like inorganic double helices of the type A2B2XY (A = Si-Pb, B = Cl-I, and XY = PN and SiS) by employing first principles density functional theory (DFT) calculations including van der Waals interactions. In these quaternary double helices PN or SiS forms the inner helix while the AB helix wraps around the inner helix and the two are interconnected. We find that the bromides and iodides of Ge, Sn, and Pb as well as Pb2Cl2PN form structurally stable double helices while Ge2I2SiS as well as bromides and iodides of Sn and Pb have stable double helices. The atomic structures of different double helices have been analyzed in detail to understand the stability of these systems as there is up to about 80% difference in the interatomic distances in the two helices which is remarkable. Also in these new classes of double helices there is polar covalent bonding in the inner helix due to heteroatoms. We have calculated the DDEC6 partial atomic charges and bond orders which suggest strong covalent bonding in the inner helix. The electronic structure reveals that these double helices are semiconducting and in many cases the band gap is direct. Furthermore, we have studied the effects of doping and found that hole doping is the most appropriate way to tuning their electronic properties.

Optoelectronic Properties of X-Doped (X = O, S, Te) Photovoltaic CSe with Puckered Structure

We exploited novel two-dimensional (2D) carbon selenide (CSe) with a structure analogous to phosphorene, and probed its electronics and optoelectronics. Calculating phonon spectra using the density functional perturbation theory (DFPT) method indicated that 2D CSe possesses dynamic stability, which made it possible to tune and equip CSe with outstanding properties by way of X-doping (X = O, S, Te), i.e., X substituting Se atoms. Then systematic investigation on the structural, electronic, and optical properties of pristine and X-doped monolayer CSe was carried out using the density functional theory (DFT) method. It was found that the bonding feature of C-X is intimately associated with the electronegativity and radius of the doping atoms, which leads to diverse electronic and optical properties for doping different group VI elements. All the systems possess direct gaps, except for O-doping. Substituting O for Se atoms in monolayer CSe brings about a transition from a direct Γ-Γ band gap to an indirect Γ-Y band gap. Moreover, the value of the band gap decreases with increased doping concentration and radius of doping atoms. A red shift in absorption spectra occurs toward the visible range of radiation after doping, and the red-shift phenomenon becomes more obvious with increased radius and concentration of doping atoms. The results can be useful for filtering doping atoms according to their radius or electronegativity in order to tailor optical spectra efficiently.

Monolayer CS as a metal-free photocatalyst with high carrier mobility and tunable band structure: a first-principles study

Producing hydrogen fuel using suitable photocatalysts from water splitting is a feasible method to harvest solar energy. A desired photocatalyst is expected to have suitable band gap, moderate band edge position, and high carrier mobility. By employing first-principles calculations, we explore a α-CS monolayer as a metal-free efficient photocatalyst. The α-CS monolayer shows good energetic, dynamic, and thermal stabilities and is insoluble in water, suggesting its experimental practicability. Monolayer and bilayer α-CS present not only appropriate band gaps for visible and ultraviolet light absorption but also moderate band alignments with water redox potentials in pH neutral water. Remarkably, the α-CS monolayer exhibits high (up to 8453.19 cm² V^-1s^-1 for hole) and anisotropic carrier mobility, which is favorable to the migration and separation of photogenerated carriers. In addition, monolayer α-CS experiences an interesting semiconductor-metal transition by applying uniaxial strain and external electric field. Moreover, α-CS under certain strain and electric field is still dynamically stable with the absence of imaginary frequencies. Furthermore, we demonstrate that the graphite (0 0 1) surface is a potential substrate for the α-CS growth with the intrinsic properties of α-CS maintaining. Therefore, our results could pave the way for the application of α-CS as a promising photocatalyst.

Scalable exfoliation and dispersion of two-dimensional materials - an update

The preparation of dispersions of single- and few-sheet 2D materials in various solvents, as well as the characterization methods applied to such dispersions, is critically reviewed. Motivating factors for producing single- and few-sheet dispersions of 2D materials in liquids are briefly discussed. Many practical applications are expected for such materials that do not require high purity formulations and tight control of donor and acceptor concentrations, as required in conventional Fab processing of semiconductor chips. Approaches and challenges encountered in exfoliating 2D materials in liquids are reviewed. Ultrasonication, mechanical shearing, and electrochemical processing approaches are discussed, and their respective limitations and promising features are critiqued. Supercritical and more conventional liquid and solvent processing are then discussed in detail. The effects of various types of stabilizers, including surfactants and other amphiphiles, as well as polymers, including homopolymeric electrolytes, nonionic polymers, and nanolatexes, are discussed. Consideration of apparent successes of stabilizer-free dispersions indicates that extensive exfoliation in the absence of dispersing aids results from processing-induced surface modifications that promote stabilization of 2D material/solvent interactions. Also apparent paradoxes in "pristineness" and optical extinctions in dispersions suggest that there is much we do not yet quantitatively understand about the surface chemistry of these materials. Another paradox, emanating from modeling dilute solvent-only exfoliation by sonication using polar components of solubility parameters and surface tension for pristine graphene with no polar structural component, is addressed. This apparent paradox appears to be resolved by realizing that the reactivity of graphene to addition reactions of solvent radicals produced by sonolysis is accompanied by unintended polar surface modifications that promote attractive interactions with solvent. This hypothesis serves to define important theoretical and experimental studies that are needed. We conclude that the greatest promise for high volume and high concentration processing lies in applying methods that have not yet been extensively reported, particularly wet comminution processing using small grinding media of various types.

Indium selenide monolayer: strain-enhanced optoelectronic response and dielectric environment-tunable 2D exciton features

Electronic and optical performances of the β-InSe monolayer (ML) are considerably boosted by tuning the corresponding band energies through lattice in-plane compressive strain engineering. First principles calculations show an indirect-direct gap transition with a large bandgap size. The crossover is due to different responses of the near-gap state energies with respect to strain. This is explained by the variation of In-Se bond length, the bond nature of near-band-edge electronic orbital and of the momentum angular contribution versus in-plane compressive strain. The effective masses of charge carriers are also found to be highly modulated and significantly light at the indirect-direct-gap transition. The tuned optical response of the resulting direct-gap ML β-InSe is evaluated versus applied energy to infer the allowed optical transitions, dielectric constants, semiconductor-metal behavior and refractive index. The environmental dielectric engineering of exciton behavior of the resulting direct-gap ML β-InSe is handled within the effective mass Wannier-Mott model and is expected to be important. Our results highlight the increase of binding energy and red-shifted exciton energy with decreasing screening substrates, resulting in a stable exciton at room temperature. The intensity and energy of the ground-state exciton emission are expected to be strongly influenced under substrate screening effect. According to our findings, the direct-gap ML β-InSe assures tremendous 2D optoelectronic and nanoelectronic merits that could overcome several limitations of unstrained ML β-InSe.

Computational methods for 2D materials: discovery, property characterization, and application design

The discovery of two-dimensional (2D) materials comes at a time when computational methods are mature and can predict novel 2D materials, characterize their properties, and guide the design of 2D materials for applications. This article reviews the recent progress in computational approaches for 2D materials research. We discuss the computational techniques and provide an overview of the ongoing research in the field. We begin with an overview of known 2D materials, common computational methods, and available cyber infrastructures. We then move onto the discovery of novel 2D materials, discussing the stability criteria for 2D materials, computational methods for structure prediction, and interactions of monolayers with electrochemical and gaseous environments. Next, we describe the computational characterization of the 2D materials' electronic, optical, magnetic, and superconducting properties and the response of the properties under applied mechanical strain and electrical fields. From there, we move on to discuss the structure and properties of defects in 2D materials, and describe methods for 2D materials device simulations. We conclude by providing an outlook on the needs and challenges for future developments in the field of computational research for 2D materials.

Electronic and optical properties of strained graphene and other strained 2D materials: a review

This review presents the state of the art in strain and ripple-induced effects on the electronic and optical properties of graphene. It starts by providing the crystallographic description of mechanical deformations, as well as the diffraction pattern for different kinds of representative deformation fields. Then, the focus turns to the unique elastic properties of graphene, and to how strain is produced. Thereafter, various theoretical approaches used to study the electronic properties of strained graphene are examined, discussing the advantages of each. These approaches provide a platform to describe exotic properties, such as a fractal spectrum related with quasicrystals, a mixed Dirac-Schrödinger behavior, emergent gravity, topological insulator states, in molecular graphene and other 2D discrete lattices. The physical consequences of strain on the optical properties are reviewed next, with a focus on the Raman spectrum. At the same time, recent advances to tune the optical conductivity of graphene by strain engineering are given, which open new paths in device applications. Finally, a brief review of strain effects in multilayered graphene and other promising 2D materials like silicene and materials based on other group-IV elements, phosphorene, dichalcogenide- and monochalcogenide-monolayers is presented, with a brief discussion of interplays among strain, thermal effects, and illumination in the latter material family.

Two-dimensional silicon and carbon monochalcogenides with the structure of phosphorene

Phosphorene has recently attracted significant interest for applications in electronics and optoelectronics. Inspired by this material an ab initio study was carried out on new two-dimensional binary materials with a structure analogous to phosphorene. Specifically, carbon and silicon monochalcogenides have been considered. After structural optimization, a series of binary compounds were found to be dynamically stable in a phosphorene-like geometry: CS, CSe, CTe, SiO, SiS, SiSe, and SiTe. The electronic properties of these monolayers were determined using density functional theory. By using accurate hybrid functionals it was found that these materials are semiconductors and span a broad range of bandgap values and types. Similarly to phosphorene, the computed effective masses point to a strong in-plane anisotropy of carrier mobilities. The variety of electronic properties carried by these compounds have the potential to broaden the technological applicability of two-dimensional materials.

Photostrictive Two-Dimensional Materials in the Monochalcogenide Family

Photostriction is predicted for group-IV monochalcogenide monolayers, two-dimensional ferroelectrics with rectangular unit cells (the lattice vector a_{1} is larger than a_{2}) and an intrinsic dipole moment parallel to a_{1}. Photostriction is found to be related to the structural change induced by a screened electric polarization (i.e., a converse piezoelectric effect) in photoexcited electronic states with either p_{x} or p_{y} (in-plane) orbital symmetry that leads to a compression of a_{1} and a comparatively smaller increase of a_{2} for a reduced unit cell area. The structural change documented here is 10 times larger than that observed in BiFeO_{3}, making monochalcogenide monolayers an ultimate platform for this effect. This structural modification should be observable under experimentally feasible densities of photexcited carriers on samples that have been grown already, having a potential usefulness for light-induced, remote mechano-optoelectronic applications.

A CO monolayer: first-principles design of a new direct band-gap semiconductor with excellent mechanical properties

Group V monolayers, e.g., nitrogene, phosphorene, arsenene, and antimonene have recently emerged as attractive candidates for electronic and optoelectronic applications. However, these pristine monolayers are not able to possess direct band gaps suitable for ultraviolet-blue photoresponse. First-principles calculations show that the Pmma-CO monolayer has a direct band gap of 2.4 eV, and predict that the system has a good stability. Unlike an easy direct-indirect gap transition under small strains in phosphorene, the direct band gap feature of Pmma-CO is maintained under a strain up to 12%. Surprisingly, Pmma-CO shows excellent mechanical stability with an anisotropic in-plane stiffness up to 475.7 N m^-1 along the b direction, which is higher than that of graphene. The in-plane hole carrier mobility is predicted to be 746.42 cm² V^-1 s^-1, similar to that of black phosphorene. When synthesized, the Pmma-CO monolayer may have great potential in the design of new ultraviolet/blue optoelectronic devices.

Ab initio prediction and characterization of phosphorene-like SiS and SiSe as anode materials for sodium-ion batteries

In this work, a density functional theory (DFT) based first-principles study is carried out to investigate the potential of phosphorene-like SiS and SiSe monolayers as anode materials for sodium-ion (Na-ion) batteries. Results show that both SiS and SiSe have large adsorption energies towards single Na atom of -0.94 and -0.43eV, owing to the charge transfers from Na to SiS or SiSe. In addition, it is found that the highest Na concentration for both SiS and SiSe is x=1 with the chemical formulas of NaSiS and NaSiSe, corresponding to the high theoretical specific capacities for Na storages of 445.6 and 250.4mAhg^-1, respectively. Moreover, Na diffusions are very fast and show strong directional behaviors on SiS and SiSe monolayers, with the energy barriers of only 0.135 and 0.158eV, lower than those of conventional anode materials for Na-ion batteries such as Na₂Ti₃O₇ (0.19eV) and Na₃Sb (0.21eV). Finally, although SiS and SiSe show semiconducting behaviors, they transform to metallic states after adsorbing Na atoms, indicating enhanced electrical conductivity during battery cycling. Given these advantages, it is expected that both SiS and SiSe monolayers are promising anode materials for Na-ion batteries, and in principle, other Na-based batteries as well.

Electronic properties of layered phosphorus heterostructures

By using ab initio approaches, the electronic properties of vertical heterostructured compounds of different structural phases of layered phosphorus have been studied.

Structural Phase Transition and Material Properties of Few-Layer Monochalcogenides

GeSe and SnSe monochalcogenide monolayers and bilayers undergo a two-dimensional phase transition from a rectangular unit cell to a square unit cell at a critical temperature T_{c} well below the melting point. Its consequences on material properties are studied within the framework of Car-Parrinello molecular dynamics and density-functional theory. No in-gap states develop as the structural transition takes place, so that these phase-change materials remain semiconducting below and above T_{c}. As the in-plane lattice transforms from a rectangle into a square at T_{c}, the electronic, spin, optical, and piezoelectric properties dramatically depart from earlier predictions. Indeed, the Y and X points in the Brillouin zone become effectively equivalent at T_{c}, leading to a symmetric electronic structure. The spin polarization at the conduction valley edge vanishes, and the hole conductivity must display an anomalous thermal increase at T_{c}. The linear optical absorption band edge must change its polarization as well, making this structural and electronic evolution verifiable by optical means. Much excitement is drawn by theoretical predictions of giant piezoelectricity and ferroelectricity in these materials, and we estimate a pyroelectric response of about 3×10^{-12}  C/K m here. These results uncover the fundamental role of temperature as a control knob for the physical properties of few-layer group-IV monochalcogenides.

Structure and properties of phosphorene-like IV-VI 2D materials

Because of the excellent physical and chemical properties of phosphorene, phosphorene and phosphorene-like materials have attracted extensive attention. Since phosphorus belongs to group V, some group IV-VI compounds could also form phosphorene-like configurations. In this work, GeO, SnO, GeS, and SnS monolayers were constructed to investigate the structural and electronic properties by employing first-principles computations. Phonon spectra suggest that these monolayers are dynamically stable and could be realized in experiments. These monolayers are all semiconductors with the band gaps of 2.26 ∼ 4.13 eV. Based on the monolayers, GeO, SnO, GeS, and SnS bilayers were also constructed. The band gaps of these bilayers are smaller than those of the corresponding monolayers. Moreover, the optical properties of these monolayers and bilayers were calculated, and the results indicate that the SnO, GeS and SnS bilayers exhibit obvious optical absorption in the visible spectrum. All the results suggest that phosphorene-like IV-VI materials are promising candidates for electronic and optical devices.

Versatile Titanium Silicide Monolayers with Prominent Ferromagnetic, Catalytic, and Superconducting Properties: Theoretical Prediction

On the basis of global structure search and density functional theory calculations, we predict a new class of two-dimensional (2D) materials, titanium silicide (Ti₂Si, TiSi₂, and TiSi₄) monolayers. They are proved to be energetically, dynamically, and thermally stable and own excellent mechanical properties. Among them, Ti₂Si is a ferromagnetic metal with a magnetic moment of 1.37 μ_B/cell, while TiSi₂ is an ideal catalyst for the hydrogen evolution reaction with a nearly zero free energy of hydrogen adsorption. More importantly, electron-phonon coupling calculations suggest that TiSi₄ is a robust 2D phonon-mediated superconductor with a transition temperature of 5.8 K, and the transition temperature can be enhanced up to 11.7 K under a suitable external strain. The versatility makes titanium silicide monolayers promising candidates for spintronic materials, hydrogen evolution catalysts, and 2D superconductors.

Electronic and magnetic properties of SnSe monolayers doped by Ga, In, As, and Sb: a first-principles study

A SnSe monolayer with an orthorhombic Pnma GeS structure is an important two-dimensional (2D) indirect band gap material at room temperature. Based on first-principles density functional theory calculations, we present systematic studies on the electronic and magnetic properties of X (X = Ga, In, As, Sb) atom doped SnSe monolayers. The calculated electronic structures show that the Ga-doped system maintains its semiconducting properties while the In-doped SnSe monolayer is half-metal. The As- and Sb-doped SnSe systems present the characteristics of an n-type semiconductor. Moreover, all considered substitutional doping cases induce magnetic ground states with a magnetic moment of ∼ 1 μB. In addition, the calculated formation energies also show that four types of doped systems are thermodynamically stable. These results provide a new route for the potential applications of doped SnSe monolayers in 2D photoelectronic and magnetic semiconductor devices.

Electronic structures and enhanced optical properties of blue phosphorene/transition metal dichalcogenides van der Waals heterostructures

As a fast emerging topic, van der Waals (vdW) heterostructures have been proposed to modify two-dimensional layered materials with desired properties, thus greatly extending the applications of these materials. In this work, the stacking characteristics, electronic structures, band edge alignments, charge density distributions and optical properties of blue phosphorene/transition metal dichalcogenides (BlueP/TMDs) vdW heterostructures were systematically studied based on vdW corrected density functional theory. Interestingly, the valence band maximum and conduction band minimum are located in different parts of BlueP/MoSe₂, BlueP/WS₂ and BlueP/WSe₂ heterostructures. The MoSe₂, WS₂ or WSe₂ layer can be used as the electron donor and the BlueP layer can be used as the electron acceptor. We further found that the optical properties under visible-light irradiation of BlueP/TMDs vdW heterostructures are significantly improved. In particular, the predicted upper limit energy conversion efficiencies of BlueP/MoS₂ and BlueP/MoSe₂ heterostructures reach as large as 1.16% and 0.98%, respectively, suggesting their potential applications in efficient thin-film solar cells and optoelectronic devices.

Epitaxial Growth of Single Layer Blue Phosphorus: A New Phase of Two-Dimensional Phosphorus

Blue phosphorus, a previously unknown phase of phosphorus, has been recently predicted by theoretical calculations and shares its layered structure and high stability with black phosphorus, a rapidly rising two-dimensional material. Here, we report a molecular beam epitaxial growth of single layer blue phosphorus on Au(111) by using black phosphorus as precursor, through the combination of in situ low temperature scanning tunneling microscopy and density functional theory calculation. The structure of the as-grown single layer blue phosphorus on Au(111) is explained with a (4 × 4) blue phosphorus unit cell coinciding with a (5 × 5) Au(111) unit cell, and this is verified by the theoretical calculations. The electronic bandgap of single layer blue phosphorus on Au(111) is determined to be 1.10 eV by scanning tunneling spectroscopy measurement. The realization of epitaxial growth of large-scale and high quality atomic-layered blue phosphorus can enable the rapid development of novel electronic and optoelectronic devices based on this emerging two-dimensional material.

Two-Dimensional Disorder in Black Phosphorus and Monochalcogenide Monolayers

Ridged, orthorhombic two-dimensional atomic crystals with a bulk Pnma structure such as black phosphorus and monochalcogenide monolayers are an exciting and novel material platform for a host of applications. Key to their crystallinity, monolayers of these materials have a 4-fold degenerate structural ground state, and a single energy scale EC (representing the elastic energy required to switch the longer lattice vector along the x- or y-direction) determines how disordered these monolayers are at finite temperature. Disorder arises when nearest neighboring atoms become gently reassigned as the system is thermally excited beyond a critical temperature Tc that is proportional to EC/kB. EC is tunable by chemical composition and it leads to a classification of these materials into two categories: (i) Those for which EC ≥ kBTm, and (ii) those having kBTm > EC ≥ 0, where Tm is a given material's melting temperature. Black phosphorus and SiS monolayers belong to category (i): these materials do not display an intermediate order-disorder transition and melt directly. All other monochalcogenide monolayers with EC > 0 belonging to class (ii) will undergo a two-dimensional transition prior to melting. EC/kB is slightly larger than room temperature for GeS and GeSe, and smaller than 300 K for SnS and SnSe monolayers, so that these materials transition near room temperature. The onset of this generic atomistic phenomena is captured by a planar Potts model up to the order-disorder transition. The order-disorder phase transition in two dimensions described here is at the origin of the Cmcm phase being discussed within the context of bulk layered SnSe.

Two-Dimensional SiS Layers with Promising Electronic and Optoelectronic Properties: Theoretical Prediction

Two-dimensional (2D) semiconductors can be very useful for novel electronic and optoelectronic applications because of their good material properties. However, all current 2D materials have shortcomings that limit their performance. As a result, new 2D materials are highly desirable. Using atomic transmutation and differential evolution global optimization methods, we identified two group IV-VI 2D materials, Pma2-SiS and silicene sulfide. Pma2-SiS is found to be both chemically, energetically, and thermally stable. Most importantly, Pma2-SiS has shown good electronic and optoelectronic properties, including direct bandgaps suitable for solar cells, good mobility for nanoelectronics, good flexibility of property tuning by layer control and applied strain, and good air stability as well. Therefore, Pma2-SiS is expected to be a promising 2D material in the field of 2D electronics and optoelectronics. The designing principles demonstrated in identifying these two tantalizing examples have great potential to accelerate the finding of new functional 2D materials.

Tunable electronic structures of germanium monochalcogenide nanosheets via light non-metallic atom functionalization: a first-principles study

The binary analogues of phosphorene, GeS and GeSe nanosheets, exhibit versatile electronic and magnetic properties through light atom functionalization.