Tin(II) Sulfide (SnS) Nanosheets by Liquid-Phase Exfoliation of Herzenbergite: IV-VI Main Group Two-Dimensional Atomic Crystals

Laser-Induced Synthesis of Tin Sulfides

Various polytypes of van der Waals (vdW) materials can be formed by sulfur and tin, which exhibit distinctive and complementary electronic properties. Hence, these materials are attractive candidates for the design of multifunctional devices. This work demonstrates direct selective growth of tin sulfides by laser irradiation. A 532 nm continuous wave laser is used to synthesize centimeter-scale tin sulfide tracks from single source precursor tin(II) o-ethylxanthate under ambient conditions. Modulation of laser irradiation conditions enables tuning of the dominant phase of tin sulfide as well as SnS2/SnS heterostructures formation. An in-depth investigation of the morphological, structural, and compositional characteristics of the laser-synthesized tin sulfide microstructures is reported. Furthermore, laser-synthesized tin sulfides photodetectors show broad spectral response with relatively high photoresponsivity up to 4 AW-1 and fast switching time (τ rise = 1.8 ms and τ fall = 16 ms). This approach is versatile and can be exploited in various fields such as energy conversion and storage, catalysis, chemical sensors, and optoelectronics.

First-Principles Study of the Schottky Contact, Tunneling Probability, and Optical Properties of MX/TiB4 Heterojunctions (M = Ge, Sn; X = S, Se, Te): Strain Engineering Tunability

Designing two-dimensional (2D) heterojunctions with rapid response and minimal energy consumption holds immense significance for the advancement of the next generation of electronic devices. Here, we construct a series of Schottky heterojunctions based on TiB4 monolayer and group-IV monochalcogenide monolayers MX (M = Ge, Sn; X = S, Se, Te). Using first-principles calculations, we investigate the structural stability, Schottky contact barrier, tunneling probability, and optical properties of MX/TiB4 heterojunctions. The calculated binding energies reveal that X-type MX/TiB4 heterojunctions exhibit more stable structures than M- and C-type stacking modes. Schottky barrier heights (SBHs) indicate that X-type GeSe/TiB4 and GeTe/TiB4 form n-type Schottky contacts with SBHs of 0.497 and 0.132 eV, respectively, while SnS/TiB4 and SnSe/TiB4 form p-type Schottky contacts with SBHs of 0.557 and 0.418 eV, respectively. Moreover, X-type MX/TiB4 heterojunctions exhibit high susceptibility to interlayer electron tunneling due to their large tunneling probability and strong interlayer interaction. Meanwhile, enhanced optical absorption capacity in MX/TiB4 heterojunctions is also observed compared with individual TiB4 and MX monolayers. By applying in-plane biaxial strain, the transformation of MX/TiB4 heterojunctions from a Schottky contact to an Ohmic contact can also be realized. Our findings could offer valuable candidate materials and guidance for the design of the next generation of nanodevices with high electronic and optical performances.

Diversity of Behavior after Collisions of Sn and Si Nanoparticles Found Using a New Density Functional Tight-Binding Method

We present a new approach to studying nanoparticle collisions using density functional based tight binding (DFTB). A novel DFTB parametrization has been developed to study the collision process of Sn and Si clusters (NPs) using molecular dynamics (MD). While bulk structures were used as training sets, we show that our model is able to accurately reproduce the cohesive energy of the nanoparticles using density functional theory (DFT) as a reference. A surprising variety of phenomena are revealed for the Si/Sn nanoparticle collisions, depending on the size and velocity of the collision: from core-shell structure formation to bounce-off phenomena.

Phase-Controlled Multi-Dimensional-Structure SnS/SnS2/CdS Nanocomposite for Development of Solar-Driven Hydrogen Evolution Photocatalyst

The quest for water-splitting photocatalysts to generate hydrogen as a clean energy source from two-dimensional (2D) materials has enormous implications for sustainable energy solutions. Photocatalytic water splitting, a major field of interest, is focused on the efficient production of hydrogen from renewable resources such as water using 2D materials. Tin sulfide and tin disulfide, collectively known as SnS and SnS2, respectively, are metal sulfide compounds that have gained attention for their photocatalytic properties. Their unique electronic structures and morphological characteristics make them promising candidates for harnessing solar energy for environmental and energy-related purposes. CdS/SnS/SnS2 photocatalysts with two Sn phases (II and IV) were synthesized using a solvothermal method in this study. CdS was successfully placed on a broad SnS/SnS2 plane after a series of characterizations. We found that it is composited in the same way as a core-shell shape. When the SnS/SnS2 phase ratio was dominated by SnS and the structure was composited with CdS, the degradation efficiency was optimal. This material demonstrated high photocatalytic hydrogenation efficiency as well as efficient photocatalytic removal of Cr(VI) over 120 min. Because of the broad light absorption of CdS, the specific surface area, which is the reaction site, became very large. Second, it served as a transport medium for electron transfer from the conduction band (CB) of the SnS to the CB of the SnS2. Because of the composite, these electrons flowed into the CB of CdS, improving the separation efficiency of the photogenerated carriers even further. This material, which was easily composited, also effectively prevented mineral corrosion, which is a major issue with CdS.

High-Pressure Synthesis of Single-Crystalline SnS Nanoribbons

Two-dimensional tin monosulfide (SnS) is attractive for the development of electronic and optoelectronic devices with anisotropic characteristics. However, its shape-controlled synthesis with an atomic thickness and high quality remains challenging. Here, we show that highly crystalline SnS nanoribbons can be produced via high-pressure (0.5 GPa) and thermal treatment (400 °C). These SnS nanoribbons have a length of several tens of micrometers and a thickness down to 5.8 nm, giving an average aspect ratio of ∼30.6. The crystal orientation along the zigzag direction and the in-plane structural anisotropy of the SnS nanoribbons are identified by transmission electron microscopy and polarized Raman spectroscopy, respectively. An ionic liquid-gated field-effect transistor fabricated using the SnS nanoribbon exhibits an on/off current ratio of >103 and a field-effect mobility of ∼0.7 cm2 V-1 s-1. This work provides a unique way to achieve one-dimensional growth of SnS.

Phase-Controllable Growth of Air-Stable SnS Nanostructures for High-Performance Photodetectors with Ultralow Dark Current

The epitaxial growth of low-dimensional tin chalcogenides SnX (X = S, Se) with a controlled crystal phase is of particular interest since it can be utilized to tune optoelectronic properties and exploit potential applications. However, it still remains a great challenge to synthesize SnX nanostructures with the same composition but different crystal phases and morphologies. Herein, we report a phase-controlled growth of SnS nanostructures via physical vapor deposition on mica substrates. The phase transition from α-SnS (Pbnm) nanosheets to β-SnS (Cmcm) nanowires can be tailored by the reduction of growth temperature and precursor concentration, which originates from a delicate competition between SnS-mica interfacial coupling and phase cohesive energy. The phase transition from the α to β phase not only greatly improves the ambient stability of SnS nanostructures but also leads to the band gap reduction from 1.03 to 0.93 eV, which is responsible for fabricated β-SnS devices with an ultralow dark current of 21 pA at 1 V, an ultrafast response speed of ≤14 μs, and broadband spectra response from the visible to near-infrared range under ambient condition. A maximum detectivity of the β-SnS photodetector arrives at 2.01 × 108 Jones, which is about 1 or 2 orders of magnitude larger than that of α-SnS devices. This work provides a new strategy for the phase-controlled growth of SnX nanomaterials for the development of highly stable and high-performance optoelectronic devices.

Liquid Phase Isolation of SnS Monolayers with Enhanced Optoelectronic Properties

Recent advances in atomically thin two dimensional (2D) anisotropic group IVA -VI metal monochalcogenides (MMCs) and their fascinating intrinsic properties and potential applications are hampered due to an ongoing challenge of monolayer isolation. Among the most promising MMCs, tin (II) sulfide (SnS) is an earth-abundant layered material with tunable bandgap and anisotropic physical properties, which render it extraordinary for electronics and optoelectronics. To date, however, the successful isolation of atomically thin SnS single layers at large quantities has been challenging due to the presence of strong interlayer interactions, attributed to the lone-pair electrons of sulfur. Here, a novel liquid phase exfoliation approach is reported, which enables the overcome of such strong interlayer binding energy. Specifically, it demonstrates that the synergistic action of external thermal energy with the ultrasound energy-induced hydrodynamic force in solution gives rise to the systematic isolation of highly crystalline SnS monolayers (1L-SnS). It is shown that the exfoliated 1L-SnS crystals exhibit high carrier mobility and deep-UV spectral photodetection, featuring a fast carrier response time of 400 ms. At the same time, monolayer-based SnS transistor devices fabricated from solution present a high on/off ratio, complemented with a responsivity of 6.7 × 10-3 A W-1 and remarkable stability upon prolonged operation in ambient conditions. This study opens a new avenue for large-scale isolation of highly crystalline SnS and other MMC manolayers for a wide range of applications, including extended area nanoelectronic devices, printed from solution.

Geometry-asymmetric photodetectors from metal-semiconductor-metal van der Waals heterostructures

The functional diversities of two-dimensional (2D) material devices with simple architectures are ultimately limited by immature doping techniques. An alternative strategy is to use geometry-asymmetric metal-semiconductor-metal (GA-MSM) structures, which enable the basic functions of semiconductor junctions such as rectification and photovoltaics. Here, the mixed-dimensional van der Waals heterostructures (MDvdWHs) based on the separation and self-assembly of p-type SnS layered nanosheets (NSs) and n-type SnS₂ nanoparticles (NPs) are obtained using an aqueous phase exfoliation (APE) method. Due to the surface charge transfer doping, the carrier transport mechanism of devices based on MDvdWHs turns from thermionic field emission (TFE) to thermionic emission (TE), with the rectification factor (I_forward/I_reverse) changing from 0.7 to 3. To further illustrate the experimental results, the generic current transport models of GA-MSM devices have been established based on the TE and TFE mechanisms in which the TE and TFE mechanisms lead to opposite rectification phenomena in good agreement with the experimental results. The GA-MSM devices show a photovoltaic effect with a high responsivity of 35 A W^-1 and detectivity of 3.4 × 10¹¹ cm Hz^1/2 W^-1. This study not only provides a novel strategy to design photovoltaic devices with MDvdWHs, but more importantly, we have established fundamental models for the rectification behavior of GA-MSM devices.

Revealing the anisotropic phonon behaviours of layered SnS by angle/temperature-dependent Raman spectroscopy

Tin sulfide (SnS), a IV-VI group layered compound, has attracted much attention because of its excellent thermoelectric properties along the crystallographic b-axis. However, there are few reports on the identification of its in-plane orientation. We observe a strong anisotropy of the in-plane Raman signal in bulk SnS. With the help of ab initio calculations, the vibrational symmetry of each observed Raman mode in the cleaved (00l)-plane is consistent with the experimental values. The angle-resolved polarized Raman spectroscopy, combined with electron backscattered diffraction technology, is utilized to systematically investigate the in-plane anisotropy of the phonon response and then determine the in-plane orientation. Furthermore, the temperature-dependent and laser-power-dependent Raman scattering analyses reveal that the adjacent layers in the SnS crystals show a relatively weak van der Waals interaction. These findings could provide much-needed experimental information for future applications related to the anisotropic transport properties of SnS single crystals.

Spiers Memorial Lecture: Next generation chalcogenide-based absorbers for thin-film solar cells

Inorganic-based thin-film photovoltaics (TFPV) represents an important component of the growing low-carbon energy market and plays a vital role in the drive toward lower cost and increased penetration of solar energy. Yet, commercialized thin-film absorber technologies suffer from some non-ideal characteristics, such as toxic or non-abundant element use (e.g., CdTe and Cu(In,Ga)(S,Se)₂, which bring into question their suitability for terawatt deployment. Numerous promising chalcogenide, halide, pnictide and oxide semiconductors are being pursued to bridge these concerns for TFPV and several promising paths have emerged, both as prospective replacements for the entrenched technologies, and to serve as partner (i.e., higher bandgap) absorbers for tandem junction devices-e.g., to be used with a lower bandgap Si bottom cell. The current perspective will primarily focus on emerging chalcogenide-based technologies and provide both an overview of absorber candidates that have been of recent interest and a deeper dive into an exemplary Cu₂BaSnS₄-related family. Overall, considering the combined needs of high-performance, low-cost, and operational stability, as well as the experiences gained from existing commercialized thin-film absorber technologies, chalcogenide-based semiconductors represent a promising direction for future PV development and also serve to highlight common themes and needs among the broader TFPV materials family.

SnS Nanoflakes/Graphene Hybrid: Towards Broadband Spectral Response and Fast Photoresponse

High responsivity has been recently achieved in a graphene-based hybrid photogating mechanism photodetector using two-dimensional (2D) semiconductor nanosheets or quantum dots (QDs) sensitizers. However, there is a major challenge of obtaining photodetectors of fast photoresponse time and broad spectral photoresponse at room temperature due to the high trap density generated at the interface of nanostructure/graphene or the large band gap of QDs. The van der Waals interfacial coupling in small bandgap 2D/graphene heterostructures has enabled broadband photodetection. However, most of the photocarriers in the hybrid structure originate from the photoconductive effect, and it is still a challenge to achieve fast photodetection. Here, we directly grow SnS nanoflakes on graphene by the physical vapor deposition (PVD) method, which can avoid contamination between SnS absorbing layer and graphene and also ensures the high quality and low trap density of SnS. The results demonstrate the extended broad-spectrum photoresponse of the photodetector over a wide spectral range from 375 nm to 1550 nm. The broadband photodetecting mechanisms based on a photogating effect induced by the transferring of photo-induced carrier and photo-hot carrier are discussed in detail. More interestingly, the device also exhibits a large photoresponsivity of 41.3 AW-1 and a fast response time of around 19 ms at 1550 nm. This study reveals strategies for broadband response and sensitive photodetectors with SnS nanoflakes/graphene.

Doped 2D SnS materials derived from liquid metal-solution for tunable optoelectronic devices

Gas-liquid reaction phenomena on liquid-metal solvents can be used to form intriguing 2D materials with large lateral dimensions, where the free energies of formation determine the final product. A vast selection of elements can be incorporated into the liquid metal-based nanostructures, offering a versatile platform for fabricating novel optoelectronic devices. While conventional doping techniques of semiconductors present several challenges for 2D materials. Liquid metals provide a facile route for obtaining doped 2D semiconductors. In this work, we successfully demonstrate that the doping of 2D SnS can be realized in a glove box containing a diluted H₂S gas. Low melting point elements such as Bi and In are alloyed with base liquid Sn in varying concentrations, resulting in the doping of 2D SnS layers incorporating Bi and In sulphides. Optoelectronic properties for photodetectors and piezoelectronics can be fine-tuned through the controlled introduction of selective migration doping. The structural modification of 2D SnS results in a 22.6% enhancement of the d₁₁ piezoelectric coefficient. In addition, photodetector response times have increased by several orders of magnitude. Doping methods using liquid metals have significantly changed the photodiode and piezoelectric device performances, providing a powerful approach to tune optoelectronic device outputs.

First-Principles Study of the Structural, Electronic, and Enhanced Optical Properties of SnS/TaS2 Heterojunction

Although the electronics and optoelectronics based on two-dimensional (2D) SnS have attracted great interest, their development is hindered by the large contact resistance at the interface of the metal-semiconductor junction. In this work, using first-principles calculations, we evaluate the contact performance in a van der Waals heterostructure composed of 2D SnS and TaS₂. We demonstrate that holes can freely transfer from the electrode to the channel as a consequence of the Schottky-barrier-free interface as well as an upward band bending. Moreover, we show that the intrinsic properties of the SnS monolayer are well-preserved in the heterojunction, which is different from those of contact with metal surfaces. An enhanced optical response is also observed as compared with the freestanding sheet. Given the recent experimental synthesis of the SnS-TaS₂ superlattice, this study enhances the understanding of the interface properties of SnS-based metal contact, which is essential for future device applications.

Bonding, structure, and mechanical stability of 2D materials: the predictive power of the periodic table

This tutorial review describes the ongoing effort to convert main-group elements of the periodic table and their combinations into stable 2D materials, which is sometimes called modern 'alchemy'. Theory is successfully approaching this goal, whereas experimental verification is lagging far behind in the synergistic interplay between theory and experiment. The data collected here gives a clear picture of the bonding, structure, and mechanical performance of the main-group elements and their binary compounds. This ranges from group II elements, with two valence electrons, to group VI elements with six valence electrons, which form not only 1D structures but also, owing to their variable oxidation states, low-symmetry 2D networks. Outside of these main groups reviewed here, predominantly ionic bonding may be observed, for example in group II-VII compounds. Besides high-symmetry graphene with its shortest and strongest bonds and outstanding mechanical properties, low-symmetry 2D structures such as various borophene and tellurene phases with intriguing properties are receiving increasing attention. The comprehensive discussion of data also includes bonding and structure of few-layer assemblies, because the electronic properties, e.g., the band gap, of these heterostructures vary with interlayer layer separation and interaction energy. The available data allows the identification of general relationships between bonding, structure, and mechanical stability. This enables the extraction of periodic trends and fundamental rules governing the 2D world, which help to clear up deviating results and to estimate unknown properties. For example, the observed change of the bond length by a factor of two alters the cohesive energy by a factor of four and the extremely sensitive Young's modulus and ultimate strength by more than a factor of 60. Since the stiffness and strength decrease with increasing atom size on going down the columns of the periodic table, it is important to look for suitable allotropes of elements and binaries in the upper rows of the periodic table when mechanical stability and robustness are issues. On the other hand, the heavy compounds are of particular interest because of their low-symmetry structures with exotic electronic properties.

Di-tert-butyltin(IV) 2-pyridyl and 4,6-dimethyl-2-pyrimidyl thiolates: versatile single source precursors for the preparation of SnS nanoplatelets as anode material for lithium ion batteries

New air and moisture stable di-tert-butyltin complexes derived from 2-mercaptopyridine (HSpy), [^tBu₂Sn(Spy)₂], [^tBu₂Sn(Cl)(Spy)] and 4,6-dimethyl-2-mercaptopyrimidine (HSpymMe₂) [^tBu₂Sn(Cl)(SpymMe₂)], have been prepared and utilized as single-source molecular precursors for the preparation of orthorhombic SnS nanoplatelets by a hot injection method and thin films by aerosol assisted chemical vapour deposition (AACVD). The complexes were characterized by NMR (¹H, ¹³C, ¹¹⁹Sn) and elemental analysis and their structures were unambiguously established by the single crystal X-ray diffraction technique. Thermolysis of these complexes in oleylamine (OAm) produced SnS nanoplatelets. The morphologies, elemental compositions, phase purity and crystal structures of the resulting Oam-capped nanoplatelets were determined by electron microscopy (SEM, TEM), energy dispersive X-ray spectroscopy (EDS) and pXRD, while the band gaps of the nanoplatelets were evaluated by diffuse reflectance spectroscopy (DRS) and were blue shifted relative to the bulk material. The morphology and preferential growth of the nanoplatelets were found to be significantly altered by the nature of the molecular precursor employed. The synthesized SnS nanoplatelets were evaluated for their performance as anode material for lithium ion batteries (LIBs). A cell comprised of an SnS electrode could be cycled for 50 cycles. The rate capability of SnS was investigated at different current densities in the range 0.1 to 0.7 A g^-1 which revealed that the initial capacity could be regained.

Preparation of solution processed photodetectors comprised of two-dimensional tin(ii) sulfide nanosheet thin films assembled via the Langmuir-Blodgett method

We report the manufacture of fully solution processed photodetectors based on two-dimensional tin(ii) sulfide assembled via the Langmuir-Blodgett method. The method we propose can coat a variety of substrates including paper, Si/SiO2 and flexible polymer allowing for a potentially wide range of applications in future optoelectronic devices.

δ-SnS: An Emerging Bidirectional Auxetic Direct Semiconductor with Desirable Carrier Mobility and High-Performance Catalytic Behavior toward the Water-Splitting Reaction

We propose a novel two-dimensional SnS allotrope (monolayer δ-SnS) based on an auxetic δ-phosphorene configuration using first-principles calculations. This monolayer appears to have outstanding stability as revealed by its energetic, kinetic, thermodynamic, and mechanic calculations, and it can withstand temperatures as high as 900 K. Monolayer δ-SnS is a wide direct-bandgap (2.354 eV) semiconductor, and its electron mobility is as high as ∼1.25 × 10³ cm² V^-1 s ^-1, higher than that of monolayer KTlO (∼450 cm² V^-1 s^-1) and MoS₂ (∼200 cm² V^-1 s^-1). Optical absorption spectra, reaching up to the order of ∼10⁵ cm^-1, are obviously excellent in the visible-light region, suggesting efficient harvesting of solar radiation. Because of its unique atomic motif, monolayer δ-SnS presents an unusual bidirectional auxetic effect: a high negative in-plane Poisson's ratio (-0.048 and -0.068), which is larger than those for many recently reported two-dimensional auxetic materials, e.g., black phosphorene (-0.027), borophene (-0.04), and monolayer penta-B₂N₄ (-0.02). The bandgap and band edge can be substantially manipulated under strain to meet the requirement of the water-splitting reaction. Particularly, when pH = 7, suitable band-edge alignments and small overpotentials of the photocatalytic OER (oxygen evolution reaction) and HER (hydrogen evolution reaction) appear, endowing monolayer δ-SnS with great potential as an efficient visible-light-driven bifunctional photocatalyst for water splitting.

A defect-rich ultrathin MoS2/rGO nanosheet electrocatalyst for the oxygen reduction reaction

The structural properties such as high specific surface area, good electrical conductivity, rich-defects of the catalyst surface guarantee outstanding catalytic performance and durability of oxygen reduction reaction (ORR) electrocatalysts. It is still a challenging task to construct ORR catalysts with excellent performance. Herein, we have reported column-like MoS2/rGO with defect-rich ultrathin nanosheets prepared by a convenient solvothermal method. The structure and composition of MoS2/rGO are systematically investigated. MoS2/rGO shows a remarkable electrocatalytic performance, which is characterized by an outstanding onset potential of 0.97 V, a half-wave potential of 0.83 V, noticeable methanol tolerance, and durability of 93.7% current retention, superior to commercial Pt/C. The ORR process occurring on MoS2/rGO is a typical four electron pathway. Therefore, this study achieves the design of a low-cost, highly efficient and stable nonprecious metal ORR electrocatalyst in alkaline media.

Exceptionally high open circuit thermoelectric figure of merit in two-dimensional tin sulphide

Thermoelectric materials with high values of power factor and thermoelectric figure of merit (ZT) are in great demand to make efficient thermoelectric devices. In this work, we explore the thermoelectric transport properties of layered tin sulphide (SnS) using first-principles method combined with Boltzmann transport theory. Our calculations show that the two-dimensional (2D) SnS materials have exceptionally high charge carrier mobilities and low lattice thermal conductivities as compared to other 2D materials such as graphene, phosphorene, MoS₂, etc. Consequently, these 2D SnS materials have high power factor andZTvalues.

Engineering of bioactive metal sulfide nanomaterials for cancer therapy

Metal sulfide nanomaterials (MeSNs) are a novel class of metal-containing nanomaterials composed of metal ions and sulfur compounds. During the past decade, scientists found that the MeSNs engineered by specific approaches not only had high biocompatibility but also exhibited unique physicochemical properties for cancer therapy, such as Fenton catalysis, light conversion, radiation enhancement, and immune activation. To clarify the development and promote the clinical transformation of MeSNs, the first section of this paper describes the appropriate fabrication approaches of MeSNs for medical science and analyzes the features and limitations of each approach. Secondly, we sort out the mechanisms of functional MeSNs in cancer therapy, including drug delivery, phototherapy, radiotherapy, chemodynamic therapy, gas therapy, and immunotherapy. It is worth noting that the intact MeSNs and the degradation products of MeSNs can exert different types of anti-tumor activities. Thus, MeSNs usually exhibit synergistic antitumor properties. Finally, future expectations and challenges of MeSNs in the research of translational medicine are spotlighted.

Dispersion behaviour of two dimensional monochalcogenides

Solution processable two-dimensional (2D) materials have provided an ideal platform for both fundamental studies and wearable electronic applications. Apart from graphene and 2D dichalcogenides, IV_A-VI metal monochalcogenides (MMCs) has emerged recently as a promising candidate for next generation electronic applications. However, the dispersion behavior, which is crucial for the quality, solubility and stability of MMCs, has been quite unexplored. Here, the exfoliation and the dispersion behavior of Germanium (II) monosulfide (GeS) and Tin (II) monosulfide (SnS) nanosheets has been investigated in a wide range of organic solvents. Nine different organic solvents were examined and analyzed, considering the solvent polarity, surface tension, and Hansen solubility parameters. A significant yield of isolated GeS and SnS flakes, namely ~16.4 and ~23.08 μg/ml in 2-propanol and N-Methyl-2-pyrrolidone respectively were attained. The isolated flakes are few-layers nanosheets with lateral sizes over a few hundreds of nanometers. The MMC colloids exhibit long-term stability, suggesting the MMCs applicability for scalable solution processable printed electronic device applications.

A Review of the Synthesis, Properties, and Applications of Bulk and Two-Dimensional Tin (II) Sulfide (SnS)

Tin(II) sulfide (SnS) is an attractive semiconductor for solar energy conversion in thin film devices due to its bandgap of around 1.3 eV in its orthorhombic polymorph, and a band gap energy of 1.5–1.7 eV for the cubic polymorph—both of which are commensurate with efficient light harvesting, combined with a high absorption coefficient (10−4 cm−1) across the NIR–visible region of the electromagnetic spectrum, leading to theoretical power conversion efficiencies >30%. The high natural abundance and a relative lack of toxicity of its constituent elements means that such devices could potentially be inexpensive, sustainable, and accessible to most nations. SnS exists in its orthorhombic form as a layer structure similar to black phosphorus; therefore, the bandgap energy can be tuned by thinning the material to nanoscale dimensions. These and other properties enable SnS applications in optoelectronic devices (photovoltaics, photodetectors), lithium- and sodium-ion batteries, and sensors among others with a significant potential for a variety of future applications. The synthetic routes, structural, optical and electronic properties as well as their applications (in particular photonic applications and energy storage) of bulk and 2D tin(II) sulfide are reviewed herein.

An interlinked computational–experimental investigation into SnS nanoflakes for field emission applications

Layered binary semiconductor materials have attracted significant interest as field emitters due to their low work function, mechanical stability, and high thermal and electrical conductivity.

Recent Advances in 2D Metal Monochalcogenides

The family of emerging low-symmetry and structural in-plane anisotropic two-dimensional (2D) materials has been expanding rapidly in recent years. As an important emerging anisotropic 2D material, the black phosphorene analog group IVA-VI metal monochalcogenides (MMCs) have been surged recently due to their distinctive crystalline symmetries, exotic in-plane anisotropic electronic and optical response, earth abundance, and environmentally friendly characteristics. In this article, the recent research advancements in the field of anisotropic 2D MMCs are reviewed. At first, the unique wavy crystal structures together with the optical and electronic properties of such materials are discussed. The Review continues with the various methods adopted for the synthesis of layered MMCs including micromechanical and liquid phase exfoliation as well as physical vapor deposition. The last part of the article focuses on the application of the structural anisotropic response of 2D MMCs in field effect transistors, photovoltaic cells nonlinear optics, and valleytronic devices. Besides presenting the significant research in the field of this emerging class of 2D materials, this Review also delineates the existing limitations and discusses emerging possibilities and future prospects.

Liquid-Metal Synthesized Ultrathin SnS Layers for High-Performance Broadband Photodetectors

Atomically thin materials face an ongoing challenge of scalability, hampering practical deployment despite their fascinating properties. Tin monosulfide (SnS), a low-cost, naturally abundant layered material with a tunable bandgap, displays properties of superior carrier mobility and large absorption coefficient at atomic thicknesses, making it attractive for electronics and optoelectronics. However, the lack of successful synthesis techniques to prepare large-area and stoichiometric atomically thin SnS layers (mainly due to the strong interlayer interactions) has prevented exploration of these properties for versatile applications. Here, SnS layers are printed with thicknesses varying from a single unit cell (0.8 nm) to multiple stacked unit cells (≈1.8 nm) synthesized from metallic liquid tin, with lateral dimensions on the millimeter scale. It is reveal that these large-area SnS layers exhibit a broadband spectral response ranging from deep-ultraviolet (UV) to near-infrared (NIR) wavelengths (i.e., 280-850 nm) with fast photodetection capabilities. For single-unit-cell-thick layered SnS, the photodetectors show upto three orders of magnitude higher responsivity (927 A W^-1 ) than commercial photodetectors at a room-temperature operating wavelength of 660 nm. This study opens a new pathway to synthesize reproduceable nanosheets of large lateral sizes for broadband, high-performance photodetectors. It also provides important technological implications for scalable applications in integrated optoelectronic circuits, sensing, and biomedical imaging.

Computational Screening toward Hydrogen Evolution Reaction by the Introduction of Point Defects at the Edges of Group IVA Monochalcogenides: A First-Principles Study

Exploring materials with high hydrogen evolution reaction (HER) performance is of importance for the development of clean hydrogen energy, and the defects on the surfaces of catalysts are essential. In this work, we evaluate the HER performance among group IVA monochalcogenides MXs (M = Ge/Sn, X = S/Se) with M/X point defects on the edges. Compared with basal planes and bare edges, the GeS edge with Ge vacancy (ΔG_H* = 0.016 eV), GeSe edge with Se vacancy (ΔG_H* = 0.073 eV), and SnSe edge with Sn vacancy (ΔG_H* = -0.037 eV) hold the best HER performances, which are comparable to or even better than the value for Pt (-0.07 eV). Furthermore, the relationships between ΔG_H* and p-band centers of considered models are summarized. The stability of proposed electrocatalysts are analyzed by vacancy-formation energy and strain engineering. In summary, the HER performance of MXs is greatly improved by introduction of point defects at the edges, which is promising for their use as electrocatalysts for the conversion and storage of energy in the future.

Liquid-phase exfoliation of black sesame to create a nanoplatform for in vitro photoluminescence and photothermal therapy

Aim: The present study aims to apply the facile liquid-phase exfoliation (LPE) strategy to fabricate 2D organic materials and thus to broaden the family of biocompatible and multifunctional 2D materials. Materials & methods: 2D material-organic melanin and cellulose nanosheets were synthesized from black sesame hull using LPE. Photoluminescence and photothermal properties of the nanosheets were assessed, as well as stability and cell killing ability. Results: The prepared 2D nanoplatform exhibited broad and multiple photoluminescent emission bands. It also demonstrated efficient photothermal cancer therapy with excellent biocompatibility. Conclusion: The present study could open an avenue in exfoliating organic materials using the LPE strategy. This could make the fabrication of multifunctional 2D organic materials more efficient and broaden the family of biocompatible 2D nanomaterials.

Liquid metal-based synthesis of high performance monolayer SnS piezoelectric nanogenerators

The predicted strong piezoelectricity for monolayers of group IV monochalcogenides, together with their inherent flexibility, makes them likely candidates for developing flexible nanogenerators. Within this group, SnS is a potential choice for such nanogenerators due to its favourable semiconducting properties. To date, access to large-area and highly crystalline monolayer SnS has been challenging due to the presence of strong inter-layer interactions by the lone-pair electrons of S. Here we report single crystal across-the-plane and large-area monolayer SnS synthesis using a liquid metal-based technique. The characterisations confirm the formation of atomically thin SnS with a remarkable carrier mobility of ~35 cm² V⁻¹ s⁻¹ and piezoelectric coefficient of ~26 pm V⁻¹. Piezoelectric nanogenerators fabricated using the SnS monolayers demonstrate a peak output voltage of ~150 mV at 0.7% strain. The stable and flexible monolayer SnS can be implemented into a variety of systems for efficient energy harvesting.

The presence of strong inter-layer interactions has hindered the synthesis efforts towards large-area and highly crystalline monolayer SnS. Here, the authors report synthesis of large-area monolayer SnS using a liquid metal-based technique, and fabricate piezoelectric nano-generators with average peak output voltage of 150 mV at 0.7% strain.

High-Performance Phase-Pure SnS Photocathodes for Photoelectrochemical Water Splitting Obtained via Molecular Ink-Derived Seed-Assisted Growth of Nanoplates

Although tin monosulfide (SnS) is one of the promising earth-abundant semiconducting materials for photoelectrochemical water splitting, the performance of SnS photocathodes remains poor. Herein, we report a stepwise approach for the fabrication of highly efficient photocathodes based on SnS nanoplates via elaborate modulation of molecular solutions. It is demonstrated that phase-pure SnS nanoplates without detrimental secondary phases (such as SnS₂ and Sn₂S₃) can be readily obtained by adjusting the amounts of Sn and S in the precursor solution. Additionally, the orientation of SnS nanoplates is controlled by implementing different types of SnS seed layers. The orientations of the SnS seed layers are changed according to the molecular shapes of the Sn-S bonds in the molecular solutions, depending on the relative nucleophilicity of the molecular moieties formed by specific thiol-amine reactions. The molecular Sn-S sheets in the seed ink was obtained by the reaction in a solvent mixture of thiogylcolic acid and ethanolamine. By contrast, the short Sn-S molecular rods result from the reaction in a solvent mixture of 2-mercaptoethanol and ethylenediamine. Interestingly, the relatively short rodlike morphology of the SnS seed induces the growth of SnS nanostructures faceted by preferred (111) and (101) planes, leading to fast charge transport. With the formation of a proper band alignment with n-type CdS and TiO₂, the preferred (111)- and (101)-oriented SnS nanoplate-based photocathode exhibited a photocurrent density of -19 mA cm^-2 at 0 V versus a reversible hydrogen electrode, establishing a new benchmark for SnS photocathodes.

Enriching and Quantifying Porous Single Layer 2D Polymers by Exfoliation of Chemically Modified van der Waals Crystals

2D polymer sheets with six positively charged pyrylium groups at each pore edge in a stacked single crystal can be transformed into a 2D polymer with six pyridines per pore by exposure to gaseous ammonia. This reaction furnishes still a crystalline material with tunable protonation degree at regular nano-sized pores promising as separation membrane. The exfoliation is compared for both 2D polymers with the latter being superior. Its liquid phase exfoliation yields nanosheet dispersions, which can be size-selected using centrifugation cascades. Monolayer contents of ≈30 % are achieved with ≈130 nm sized sheets in mg quantities, corresponding to tens of trillions of monolayers. Quantification of nanosheet sizes, layer number and mass shows that this exfoliation is comparable to graphite. Thus, we expect that recent advances in exfoliation of graphite or inorganic crystals (e.g. scale-up, printing etc.) can be directly applied to this 2D polymer as well as to covalent organic frameworks.

Anisotropic circular photogalvanic effect in colloidal tin sulfide nanosheets

Tin sulfide promises very interesting properties such as a high optical absorption coefficient and a small band gap, while being less toxic compared to other metal chalcogenides. However, the limitations in growing atomically thin structures of tin sulfide hinder the experimental exploration of these properties. Due to the flexibility of the colloidal synthesis, it is possible to synthesize very thin and at the same time large nanosheets. Electrical transport measurements show that these nanosheets can function as field-effect transistors with an on/off ratio of more than 105 at low temperatures and p-type behavior. The temperature dependency of the charge transport reveals that defects in the crystal are responsible for the formation of holes as majority carriers. During illumination with circularly polarized light, these crystals generate a helicity dependent photocurrent at zero-volt bias, since their symmetry is broken by asymmetric interfaces (substrate and vacuum). Further, the observed circular photogalvanic effect shows a pronounced in-plane anisotropy, with a higher photocurrent along the armchair direction, originating from the higher absorption coefficient in this direction. Our new insights show the potential of tin sulfide for new functionalities in electronics and optoelectronics, for instance as polarization sensors.

Thickness of elemental and binary single atomic monolayers

The thickness of monolayers is a fundamental property of two-dimensional (2D) materials that has not found the necessary attention. It plays a crucial role in their mechanical behavior, the determination of related physical properties such as heat transfer, and especially the properties of multilayer systems. Measurements of the thickness of free-standing monolayers are widely lacking and notoriously too large. Consistent thicknesses have been reported for single layers of graphene, boronitrene, and SiC derived from interlayer spacing measured by X-ray diffraction in multilayer systems, first-principles calculations of the interlayer spacing, and tabulated van der Waals (vdW) diameters. Furthermore, the electron density-based volume model agrees with the geometric slab model for graphene and boronitrene. For other single-atom monolayers DFT calculations and molecular dynamics (MD) simulations deliver interlayer distances that are often much smaller than the vdW diameter, owing to further electrostatic and (weak) covalent interlayer interaction. Monolayers strongly bonded to a surface also show this effect. If only weak vdW forces exist, the vdW diameter delivers a reasonable thickness not only for free-standing monolayers but also for few-layer systems and adsorbed monolayers. Adding the usually known corrugation effect of buckled or puckered monolayers to the vdW diameter delivers an upper limit of the monolayer thickness. The study presents a reference database of thickness values for elemental and binary group-IV and group-V monolayers, as well as binary III-V and IV-VI compounds.

Two-dimensional silicon bismotide (SiBi) monolayer with a honeycomb-like lattice: first-principles study of tuning the electronic properties

Using density functional theory, we investigate a novel two-dimensional silicon bismotide (SiBi) that has a layered GaSe-like crystal structure. Ab initio molecular dynamic simulations and phonon dispersion calculations suggest its good thermal and dynamical stability. The SiBi monolayer is a semiconductor with a narrow indirect bandgap of 0.4 eV. Our results show that the indirect bandgap decreases as the number of layers increases, and when the number of layers is more than six layers, direct-to-indirect bandgap switching occurs. The SiBi bilayer is found to be very sensitive to an E-field. The bandgap monotonically decreases in response to uniaxial and biaxial compressive strain, and reaches 0.2 eV at 5%, while at 6%, the semiconductor becomes a metal. For both uniaxial and biaxial tensile strains, the material remains a semiconductor and indirect-to-direct bandgap transition occurs at a strain of 3%. Compared to a SiBi monolayer with a layer thickness of 4.89 Å, the bandgap decreases with either increasing or decreasing layer thickness, and at a thicknesses of 4.59 to 5.01 Å, the semiconductor-to-metal transition happens. In addition, under pressure, the semiconducting character of the SiBi bilayer with a 0.25 eV direct bandgap is preserved. Our results demonstrate that the SiBi nanosheet is a promising candidate for designing high-speed low-dissipation devices.

The modulation of the electronic properties of SiBi monolayer via external means, including layer thickness, electric field and mechanical strain are explored with DFT method.

Synthesis, local structure and optical property studies of α-SnS microrods by synchrotron X-ray pair distribution function and micro-Raman shift

The PDF refinement shows layer structure of SnS-A with two distinct bond lengths, one nearly parallel to the ‘a’ axis and another perpendicular to the ‘a’ axis, it corresponds to bond lengths of 2.62528 (38) Å and 2.66204 (03) Å.

Sub-10 nm tunneling field-effect transistors based on monolayer group IV mono-chalcogenides

The development of air-stable channels with a high on-state current (I_on) is in high demand for the feasible application of TFETs. Monolayer group IV mono-chalcogenides (i.e., GeS, GeSe, SnS, and SnSe), as emerging air-stable atomic-thin semiconductors, are potential channels for sub-10 nm tunneling field-effect transistors due to their high carrier mobility and anisotropic electronic properties. Herein, we investigated the performances of sub-10 nm monolayer (ML) group IV mono-chalcogenide TFETs using ab initio quantum transport simulation. The ML GeSe TFET exhibited the best performance with regards to both high I_on and low leakage current (I_leak) among the four devices, followed by the ML SnSe TFET with a high I_on. The I_on of the optimal ML GeSe TFET with a physical gate length of L_g = 10 nm surpasses the International Technology Roadmap for Semiconductors (ITRS, 2013 Edition) requirements for high-performance (HP) and low-power (LP) devices, simultaneously, and that of the ML SnSe TFET with L_g = 10 nm surpasses the requirement of ITRS HP devices. In combination with our former works, we suggest an E_g of 0.77-1.19 eV and of 0.11-0.15m₀ to search for competitive 2D channels with a high I_on for HP application in TFET devices with a planar homogeneous p-i-n architecture.

Raman Spectra Shift of Few-Layer IV-VI 2D Materials

Raman spectroscopy is the most commonly used method to investigate structures of materials. Recently, few-layered IV-VI 2D materials (SnS, SnSe, GeS, and GeSe) have been found and ignited significant interest in electronic and optical applications. However, unlike few-layer graphene, in which its interlayer structures such as the number of its layers are confirmed through measurement of the Raman scattering, few-layer IV-VI 2D materials have not yet been developed to the point of understanding their interlayer structure. Here we performed first-principles calculations on Raman spectroscopy for few-layer IV-VI 2D materials. In addition to achieving consistent results with measurements of bulk structures, we revealed significant red and blue shifts of characteristic Raman modes up to 100 cm-1 associated with the layer number. These shifts of lattice vibrational modes originate from the change of the bond lengths between the metal atoms and chalcogen atoms through the change of the interlayer interactions. Particularly, our study shows weak covalent bonding between interlayers, making the evolution of Raman signals according to the thickness different from other vdW materials. Our results suggest a new way for obtaining information of layer structure of few-layer IV-VI 2D materials through Raman spectroscopy.

Biocompatible Two-Dimensional Titanium Nanosheets for Multimodal Imaging-Guided Cancer Theranostics

Photothermal therapy (PTT) based on two-dimensional (2D) nanomaterials has shown significant potential in cancer treatment. However, developing 2D nanomaterial-based theranostic agents with good biocompatibility and high therapeutic efficiency remains a key challenge. Bulk titanium (Ti) has been widely used as biomedical materials for their reputable biocompatibility, whereas nanosized Ti with a biological function remains unexplored. In this work, the 2D Ti nanosheets (NSs) are successfully exfoliated from nonlayer bulk Ti and utilized as an efficient theranostic nanoplatform for dual-modal computed tomography/photoacoustic (CT/PA) imaging-navigated PTT. Besides the excellent biocompatibility obtained by TiNSs as expected, they are found to show strong absorption ability with an extinction coefficient of 20.8 L g^-1 cm^-1 and high photothermal conversion ability with an efficiency of 61.5% owing to localized surface plasmon resonances, which exceeds most of other well-known photothermal agents, making it quite promising for PTT against cancer. Furthermore, the metallic property and light-heat-acoustic transformation endow 2D Ti with the strong CT/PA imaging signal and efficient cancer therapy, simultaneously. This work highlights the enormous potential of nanosized Ti in both the diagnosis and treatment of cancer. As a paradigm, this study also paves a new avenue for the elemental transition-metal-based cancer theranostics.

Recent progress in 2D group IV-IV monochalcogenides: synthesis, properties and applications

Coordination-related, 2D structural phase transitions are a fascinating facet of 2D materials with structural degeneracy. Phosphorene and its new phases, exhibiting unique electronic properties, have received considerable attention. The 2D group IV-IV monochalcogenides (i.e. GeS, GeSe, SnS and SnSe) like black phosphorous possess puckered layered orthorhombic structure. The 2D group IV-IV monochalcogenides with advantages of earth-abundance, less toxicity, environmental compatibility and chemical stability, can be widely used in optoelectronics, piezoelectrics, photodetectors, sensors, Li-batteries and thermoelectrics. In this review, we summarized recent research progress in theory and experiment, which studies the fundamental properties, applications and fabrication of 2D group IV-IV monochalcogenides and their new phases, and brings new perspectives and challenges for the future of this emerging field.

Quantum confinement in few layer SnS nanosheets

Orthorhombic tin monosulfide (SnS) consists of layers of covalently bound Sn and S atoms held together by weak van der Waals forces and is a stable two-dimensional material with potentially useful properties in emerging applications such as valleytronics. Large-scale sustainable synthesis of few-layer (e.g., 1-10 layers) SnS is a challenge, which also slows progress in understanding their properties as a function of number of layers. Herein we describe solvothermal synthesis of SnS in water or ethylene glycol. The latter yields a flower-like morphology where the petals are SnS nanoplates and sonication and separation of these flowers via differential centrifugation yields 1-10 layer SnS nanoplates. The direct optical absorption edges of these SnS nanoplates blue-shift due to quantum confinement from 1.33 to 1.88 eV as the thickness (number of layers) is decreased from ∼5 nm (10 layers) to ∼2 nm (4 layers).

Designing a Novel Monolayer β-CSe for High Performance Photovoltaic Device: An Isoelectronic Counterpart of Blue Phosphorene

Using the first-principles method, an unmanufactured structure of blue-phosphorus-like monolayer CSe (β-CSe) was predicted to be stable. Slightly anisotropic mechanical characteristics in β-CSe sheet were discovered: it can endure an ultimate stress of 5.6 N/m at 0.1 along an armchair direction, and 5.9 N/m at 0.14 along a zigzag direction. A strain-sensitive transport direction was found in β-CSe, since β-CSe, as an isoelectronic counterpart of blue phosphorene (β-P), also possesses a wide indirect bandgap that is sensitive to the in-plane strain, and its carrier effective mass is strain-dependent. Its indirect bandgap character is robust, except that armchair-dominant strain can drive the indirect-direct transition. We designed a heterojunction by the β-CSe sheet covering α-CSe sheet. The band alignment of the α-CSe/β-CSe interface is a type-II van der Waals p-n heterojunction. An appreciable built-in electric field across the interface, which is caused by the charges transfering from β-CSe slab to α-CSe, renders energy bands bending, and it makes photo-generated carriers spatially well-separated. Accordingly, as a metal-free photocatalyst, α-CSe/β-CSe heterojunction was endued an enhanced solar-driven redox ability for photocatalytic water splitting via lessening the electron-hole-pair recombination. This study provides a fundamental insight regarding the designing of the novel structural phase for high-performance light-emitting devices, and it bodes well for application in photocatalysis.

One-Dimensional-Sn2X3 (X = S, Se) as Promising Optoelectronic and Thermoelectronic Materials: A Comparison with Three-Dimensional-Sn2X3

Ever since the discovery of two-dimensional (2D) material graphene, there has been huge interest in the exploration of low-dimensional materials that can be exfoliated from their three-dimensional counterpart with enriched properties due to quantum confinement. Two members of the Sn-S family, Pnma-SnS and P3̅ m1-SnS₂ that possess a layered structure with 2D nanosheets stacked via weak van der Waals (vdW) interactions, have widely been studied in this regard. The other member, Pnma-Sn₂S₃, comprising one-dimensional (1D) nanochains bound via vdW interactions, has never been investigated in the view of exfoliated 1D analogue. In this work, we therefore comprehensively studied 1D-Sn₂X₃ (X = S and Se) nanochains and demonstrated them to be stable and exfoliable from their bulk counterpart. Further, it is also shown that the exfoliated 1D nanochains can easily be identified from their bulk counterpart using Raman, infrared, and X-ray spectroscopies. Our calculations predict a direct band gap of 2.35 eV (1.67 eV) for 1D-Sn₂S₃ (1D-Sn₂Se₃) nanochains under the Heyd, Scuseria, and Ernzerhof functional, with a broad absorption region lying between 2 and 8 eV, lower reflection, high charge-carrier mobility with ambipolar characteristics, as well as a larger value of the Seebeck coefficient and a smaller value of the thermal conductivity, resulting in a better thermoelectric figure of merit. These interesting electronic, optical, transport, and thermoelectric properties make 1D-Sn₂X₃ nanochains a potential candidate for the application in future optoelectronic and thermoelectronic devices, in fact, better than three-dimensional (3D)-Sn₂X₃ for few of the applications. Moreover, 3D-Sn₂Se₃ is also investigated in detail in this work, which to the best of our knowledge has not been done before.

In-Plane Anisotropic Faceting of Ultralarge and Thin Single-Crystalline Colloidal SnS Nanosheets

The colloidal synthesis of large, thin two-dimensional (2D) nanosheets is fascinating but challenging, since the growth along the lateral and vertical dimensions needs to be controlled independently. In-plane anisotropy in 2D nanosheets is attracting more attention as well. We present a new synthesis for large colloidal single-crystalline SnS nanosheets with the thicknesses down to 7 nm and lateral sizes up to 8 μm. The synthesis uses trioctylphosphine-S (TOP-S) as sulfur source and oleic acid (with or without trioctylphosphine, TOP) as ligands. Upon adjusting the capping ligand amount, the growth direction can be switched between anisotropic directions (armchair and zigzag) and isotropic directions ("ladder" directions), leading to an edge-morphology anisotropy. This is the first report on solution-phase synthesis of large thin tin(II) sulfide (SnS) nanosheets (NSs) with tunable edge faceting. Furthermore, electronic transport measurements show strong dependency on the crystallographic directions confirming structural anisotropy.