Topologically tuned terahertz confinement in a nonlinear photonic chip

Engineering topological interface states in metal-wire waveguides for broadband terahertz signal processing

Innovative terahertz waveguides are in high demand to serve as a versatile platform for transporting and manipulating terahertz signals for the full deployment of future six-generation (6G) communication systems. Metal-wire waveguides have emerged as promising candidates, offering the crucial advantage of sustaining low-loss and low-dispersion propagation of broadband terahertz pulses. Recent advances have opened up new avenues for implementing signal-processing functionalities within metal-wire waveguides by directly engraving grooves along the wire surfaces. However, the challenge remains to design novel groove structures to unlock unprecedented signal-processing functionalities. In this study, we report a plasmonic signal processor by engineering topological interface states within a terahertz two-wire waveguide. We construct the interface by connecting two multiscale groove structures with distinct topological invariants, i.e., featuring a π-shift difference in the Zak phases. The existence of this topological interface within the waveguide is experimentally validated by investigating the transmission spectrum, revealing a prominent transmission peak in the center of the topological bandgap. Remarkably, we show that this resonance is highly robust against structural disorders, and its quality factor can be flexibly controlled. This unique feature not only facilitates essential functions such as band filtering and isolating but also promises to serve as a linear differential equation solver. Our approach paves the way for the development of new-generation all-optical analog signal processors tailored for future terahertz networks, featuring remarkable structural simplicity, ultrafast processing speeds, as well as highly reliable performance.

Applications of remote epitaxy and van der Waals epitaxy

Epitaxy technology produces high-quality material building blocks that underpin various fields of applications. However, fundamental limitations exist for conventional epitaxy, such as the lattice matching constraints that have greatly narrowed down the choices of available epitaxial material combinations. Recent emerging epitaxy techniques such as remote and van der Waals epitaxy have shown exciting perspectives to overcome these limitations and provide freestanding nanomembranes for massive novel applications. Here, we review the mechanism and fundamentals for van der Waals and remote epitaxy to produce freestanding nanomembranes. Key benefits that are exclusive to these two growth strategies are comprehensively summarized. A number of original applications have also been discussed, highlighting the advantages of these freestanding films-based designs. Finally, we discuss the current limitations with possible solutions and potential future directions towards nanomembranes-based advanced heterogeneous integration.

Topological plasmons in stacked graphene nanoribbons

In this Letter, we theoretically study the topological plasmons in Su-Schrieffer-Heeger (SSH) model-based graphene nanoribbon (GNR) layers. We find that for the one-dimensional (1D) stacked case, only two topological modes with the field localized in the top or bottom layer are predicted to exist by the Zak phase. When we further expand the stacked 1D GNR layers to two-dimensional (2D) arrays in the in-plane direction, the topology is then characterized by the 2D Zak phase, which predicts the emergence of three kinds of topological modes: topological edge, surface, and corner modes. For a 2D ribbon array with Nx × Ny units, there are 4(Ny - 1), 4(Nx - 1), and 4 topological edge, surface, and corner modes, and the field is highly localized at the edge/surface/corner ribbons. This work offers a platform to realize topological modes in GNRs and could be important for the design of topological photonic devices such as lasers and sensors.

Terahertz waveform synthesis in integrated thin-film lithium niobate platform

Bridging the "terahertz gap" relies upon synthesizing arbitrary waveforms in the terahertz domain enabling applications that require both narrow band sources for sensing and few-cycle drives for classical and quantum objects. However, realization of custom-tailored waveforms needed for these applications is currently hindered due to limited flexibility for optical rectification of femtosecond pulses in bulk crystals. Here, we experimentally demonstrate that thin-film lithium niobate circuits provide a versatile solution for such waveform synthesis by combining the merits of complex integrated architectures, low-loss distribution of pump pulses on-chip, and an efficient optical rectification. Our distributed pulse phase-matching scheme grants shaping the temporal, spectral, phase, amplitude, and farfield characteristics of the emitted terahertz field through designer on-chip components. This strictly circumvents prior limitations caused by the phase-delay mismatch in conventional systems and relaxes the requirement for cumbersome spectral pre-engineering of the pumping light. We propose a toolbox of basic blocks that produce broadband emission up to 680 GHz and far-field amplitudes of a few V m-1 with adaptable phase and coherence properties by using near-infrared pump pulse energies below 100 pJ.