Synchronously wired infrared antennas for resonant single-quantum-well photodetection up to room temperature

Enhanced response over wavelength range of 7-12 µm for quantum wells in asymmetric micro-pillars

Efficient coupling in broad wavelength range is desirable for wide-spectrum infrared light detection, yet this is a challenge for intersubband transition in semiconductor quantum wells (QWs). High-Q cavities mostly intensify the absorption at peak wavelengths but with shrinking bandwidth. Here, we propose a novel approach to expand the operating spectral range of the Quantum Well Infrared Photodetectors (QWIPs). By processing the QWs into asymmetric micro-pillar array structure, the device demonstrates a substantial enhancement in spectral response across the wavelength from 7.1 µm to 12.3 µm with guided mode resonance (GMR) effects. The blackbody responsivity is then increased by 3 times compared to that of the 45° polished edge-coupled counterpart. Meanwhile, the dark current density remains unchanged after the deep etching process, which will benefit the electrical performance of the detector with reduced volume duty ratio. In contrast to the symmetric micro-pillar array that contains simple resonance mode, the detectivity of QWIP in asymmetric pillar structure is found to be improved by 2-4 times within the range of 9.5 µm to 15 µm.

Performance of long-wave infrared band of microstructured heavily doped InAsSb on type II superlattice layer part 1: the photonic study

This article deals with the optical study of nanostructured components which absorb light across the entire long-wave infrared (LWIR) spectral band. The components are made of type-II superlattice (T2SL) absorber and highly doped InAsSb, the latter being nanostructured to ensure multiple resonances. We studied two components: in the first one, the T2SL has a thickness of 1.6 μm, and in the second its thickness is 300 nm. The calculated absorption spectra were shown and the components revealed high absorption thanks to optical resonance and high angular acceptance. A fabrication process has been developed, and optical measurements have confirmed the reliability of the model.

Photogating-assisted tunneling boosts the responsivity and speed of heterogeneous WSe2/Ta2NiSe5 photodetectors

Photogating effect is the dominant mechanism of most high-responsivity two-dimensional (2D) material photodetectors. However, the ultrahigh responsivities in those devices are intrinsically at the cost of very slow response speed. In this work, we report a WSe2/Ta2NiSe5 heterostructure detector whose photodetection gain and response speed can be enhanced simultaneously, overcoming the trade-off between responsivity and speed. We reveal that photogating-assisted tunneling synergistically allows photocarrier multiplication and carrier acceleration through tunneling under an electrical field. The photogating effect in our device features low-power consumption (in the order of nW) and shows a dependence on the polarization states of incident light, which can be further tuned by source-drain voltages, allowing for wavelength discrimination with just a two-electrode planar structure. Our findings offer more opportunities for the long-sought next-generation photodetectors with high responsivity, fast speed, polarization detection, and multi-color sensing, simultaneously.

Low Dark Current Operation in InAs/GaAs(111)A Infrared Photodetectors: Role of Misfit Dislocations at the Interface

We demonstrate an extended short-wave infrared (e-SWIR) photodetector composed of an InAs/GaAs(111)A heterostructure with interface misfit dislocations. The layer structure of the photodetector consists simply of an n-InAs optical absorption layer directly grown with a thin undoped-GaAs spacer layer on n-GaAs by molecular beam epitaxy. The lattice mismatch was abruptly relaxed by forming a misfit dislocation network at the initial stage of the InAs growth. We found high-density threading dislocations (1.5 × 10⁹ cm^-2) in the InAs layer. The current-voltage characteristics of the photodetector at 77 K had a very low dark current density (<1 × 10^-9 A cm^-2) at a positive applied voltage (electrons flow from n-GaAs to n-InAs) of up to ∼+1 V. Simulation of the band structure revealed that the direct connection of GaAs and InAs and the formation of interfacial states by the misfit dislocations play significant positive roles in suppressing dark current. Under illumination with e-SWIR light at 77 K, a clear photocurrent signal was observed with a 2.6 μm cutoff wavelength, which is consistent with the bandgap of InAs. We also demonstrated e-SWIR detection at room temperature with a 3.2 μm cutoff wavelength. The maximum detectivity at 294 K exceeds 2 × 10⁸ cm Hz^0.5 W^-1 for the detection of e-SWIR light at 2 μm.

Mid-Infrared Intersubband Cavity Polaritons in Flexible Single Quantum Well

Strong and ultrastrong coupling between intersubband transitions in quantum wells and cavity photons have been realized in mid-infrared and terahertz spectral regions. However, most previous works employed a large number of quantum wells on rigid substrates to achieve coupling strengths reaching the strong or ultrastrong coupling regime. In this work, we experimentally demonstrate ultrastrong coupling between the intersubband transition in a single quantum well and the resonant mode of photonic nanocavity at room temperature. We also observe strong coupling between the nanocavity resonance and the second-order intersubband transition in a single quantum well. Furthermore, we implement for the first time such intersubband cavity polariton systems on soft and flexible substrates and demonstrate that bending of the single quantum well does not significantly affect the characteristics of the cavity polaritons. This work paves the way to broaden the range of potential applications of intersubband cavity polaritons including soft and wearable photonics.

Broadband long-wave infrared high-absorption of active materials through hybrid plasmonic resonance modes

Broadband high absorption of long-wavelength infrared light for rough submicron active material films is quite challenging to achieve. Unlike conventional infrared detection units, with over three-layer complex structures, a three-layer metamaterial with mercury cadmium telluride (MCT) film sandwiched between an Au cuboid array and Au mirror is studied through theory and simulations. The results show that propagated/localized surface plasmon resonance simultaneously contribute to broadband absorption under the TM wave of the absorber, while the Fabry-Perot (FP) cavity resonance causes absorption of the TE wave. As surface plasmon resonance concentrates most of the TM wave on the MCT film, 74% of the incident light energy is absorbed by the submicron thickness MCT film within the 8-12 μm waveband, which is approximately 10 times than that of the rough same thickness MCT film. In addition, by replacing the Au mirror with Au grating, the FP cavity along the y-axis direction was destroyed, and the absorber exhibited excellent polarization-sensitive and incident angle-insensitive properties. For the corresponding conceived metamaterial photodetector, as carrier transit time across the gap between Au cuboid is much less than that of other paths, the Au cuboids simultaneously act as microelectrodes to collect photocarriers generated in the gap. Thus the light absorption and photocarrier collection efficiency are hopefully improved simultaneously. Finally, the density of the Au cuboids is increased by adding the same arranged cuboids perpendicular to the original direction on the top surface or by replacing the cuboids with crisscross, which results in broadband polarization-insensitive high absorption by the absorber.

Enhanced absorption of infrared light for quantum wells in coupled pillar-cavity arrays

Periodic pillars of semiconductor in sub-wavelength size can serve multiple roles as diffracting, trapping and absorbing light for effective photoelectric conversion which has been intensively studied in the visible range. Here, we design and fabricate the micro-pillar arrays of AlGaAs/GaAs multi quantum wells(QWs) for high performance detection of long wavelength infrared light. Compared to its planar counterpart, the array offers 5.1 times intensified absorption at peak wavelength of 8.7 µm with 4 times shrinked electrical area. It's illustrated by simulation that the normal incident light is guided in the pillars by HE₁₁ resonant cavity mode to form strengthened Ez electrical field, which enables the inter-subband transition of n-type QWs. Moreover, the thick active region of dielectric cavity that contains 50 periods of QWs with fairly low doping concentration will be beneficial to the optical and electrical merits of the detectors. This study demonstrates an inclusive scheme to substantially raise the signal to ratio of infrared detection with all-semiconductor photonic structures.

Metamaterial engineering for optimized photon absorption in unipolar quantum devices

Metamaterials have played a major role in the development of optoelectronic devices due to their capability of coupling free-space radiation with active materials at the nanometer scale. In particular, unipolar photodetectors display highly improved performances when implemented into patch-antenna arrays. We study light-coupling and absorption in patch-antenna metamaterials by combining an experimental investigation, an analytical approach based on coupled mode theory and numerical simulations in order to understand how the geometrical parameters influence the electromagnetic energy transfer from the free-space to the active material. Our findings are applied to the design of optimized unipolar photodetectors with improved quantum efficiency.

Time-Resolved FDTD and Experimental FTIR Study of Gold Micropatch Arrays for Wavelength-Selective Mid-Infrared Optical Coupling

Infrared radiation reflection and transmission of a single layer of gold micropatch two-dimensional arrays, of patch length ∼1.0 μm and width ∼0.2 μm, have been carefully studied by a finite-difference time-domain (FDTD) method, and Fourier-transform infrared spectroscopy (FTIR). Through precision design of the micropatch array structure geometry, we achieve a significantly enhanced reflectance (85%), a substantial diffraction (10%), and a much reduced transmittance (5%) for an array of only 15% surface metal coverage. This results in an efficient far-field optical coupling with promising practical implications for efficient mid-infrared photodetectors. Most importantly we find that the propagating electromagnetic fields are transiently concentrated around the gold micropatch array in a time duration of tens of ns, providing us with a novel efficient near-field optical coupling.

Strong coupling regime and bound states in the continuum between a quantum emitter and phonon-polariton modes

We investigate the population dynamics of a two-level quantum emitter (QE) placed near a hexagonal boron nitride (h-BN) layer. The h-BN layer supports two energy phonon-polariton bands. In the case that the transition energy of the QE is resonant to them, its relaxation rate is enhanced several orders of magnitude compared to its free-space value and the population of the QE excited state shows reversible dynamics. We further show that for specific parameters of the QE/h-BN layer system, the QE population can be trapped in the excited state, keeping a constant value over long periods of time, thus demonstrating that the h-BN layer is a platform that can provide the strong light-matter interaction conditions needed for the formation of bound states in the electromagnetic continuum of modes. Semi-analytical methods are employed for determining whether such a bound state can be formed for given coupling conditions, as well as for computing the amount of initial population trapped in it. The bound states in the continuum are important for designing practical future quantum applications.

Patchwork metasurface quantum well photodetectors with broadened photoresponse

Complex lightwave manipulation such as broadband absorption has been realized with metasurfaces based on laterally arranged metal-dielectric-metal cavities with different geometries. However, application of these metasurfaces for optoelectronic devices by incorporating functional dielectrics remains challenging. Here, we integrate a quantum well infrared photodetector (QWIP) with a metasurface made of a patchwork of square cavities with different dimensions arranged in a subwavelength unit cell. Our detector realizes wideband photoresponse approaching the entire responsivity spectrum of the QWIP-single-sized square cavities can utilize only 60% of the possible bandwidth-and external quantum efficiencies of up to 78% at 6.8 µm. Our highly flexible design scheme enables integration of photodetectors and metasurfaces with arbitrary arrangements of cavities selectively responding to incidence with a specific wavefront.

Silver nanoparticle on aluminum mirror: active spectroscopy and decay rate enhancement

Recent advances in nanotechnology and optics have paved the way for new plasmonic devices. One of them are nanopatch antennas that are simple and, at the same time, effective devices for localizing the electromagnetic field on a scale of less than 10 nm and can be used in photonic integrated circuits as effective sources of photons, including single-photon sources. In the present study, we investigate the radiative characteristics of a submonolayer of colloidal CdSe/CdS quantum dots that form island structures in a resonator: a cubic silver nanoparticle on an aluminum mirror. For detecting plasmonic nanoparticles on glass or metal surfaces, we propose a new technique involving a tunable laser and a confocal microscope. We provide a comparative study of the luminescence enhancement factors for QDs in the NPAs upon off-resonance excitation and at a wavelength close to the resonance; a significant difference in the luminescence enhancement factors (by order of magnitude) is demonstrated. A 60-fold reduction in the spontaneous emission time, as well as an increase in the radiation intensity by a factor of 330, has been obtained in the experiments. The increase in the spontaneous emission rate demonstrated for the quantum dots is explained by the Purcell effect. Full-wave simulations of electromagnetic fields were carried out for the model of the developed nanopatch antenna; luminescence enhancement factors and radiative efficiencies were calculated as well.

Kirchhoff's Thermal Radiation from Lithography-Free Black Metals

Lithography-free black metals composed of a nano-layered stack of materials are attractive not only due to their optical properties but also by virtue of fabrication simplicity and the cost reduction of devices based on such structures. We demonstrate multi-layer black metal layered structures with engineered electromagnetic absorption in the mid-infrared (MIR) wavelength range. Characterization of thin SiO2 and Si films sandwiched between two Au layers by way of experimental electromagnetic radiation absorption and thermal radiation emission measurements as well as finite difference time domain (FDTD) numerical simulations is presented. Comparison of experimental and simulation data derived optical properties of multi-layer black metals provide guidelines for absorber/emitter structure design and potential applications. In addition, relatively simple lithography-free multi-layer structures are shown to exhibit absorber/emitter performance that is on par with what is reported in the literature for considerably more elaborate nano/micro-scale patterned metasurfaces.

Efficient absorption enhancement approaches for AlInAsSb avalanche photodiodes for 2-μm applications

Recently, advances in imaging and LIDAR applications have stimulated the development of high-sensitivity receivers that operate at wavelengths of ≥ 2 µm, which has driven research on avalanche photodiodes (APDs) that operate in that spectral region. High quantum efficiency is a key performance parameter for these photodetectors. Increasing the thickness of the absorption region is a straightforward approach to increase the quantum efficiency. However, the primary source of dark current is the narrow-bandgap material used for 2-µm detection. Increasing its thickness results in higher noise. In this paper, we describe two approaches to enhance the quantum efficiency, both of which are superior to a conventional anti-reflection (AR) coating. For normal incidence at 2 µm, finite-difference time-domain (FDTD) simulations show the absorption can be enhanced by more than 100% with a triangular-lattice photonic crystal, and nearly 400% by applying a metal grating. This is achieved by coupling normal incidence light into the laterally propagating modes in the device. Moreover, the significantly higher absorption of the metal grating compared to the photonic crystal is due to the high coupling efficiency provided by the metal grating. This work provides promising methods and physical understanding for enhancing the quantum efficiency for 2-µm detection without increasing absorber thickness, which also enables low dark current and high bandwidth.

Absorption enhancement in all-semiconductor plasmonic cavity integrated THz quantum well infrared photodetectors

The light coupling properties of all-semiconductor plasmonic cavity integrated THz quantum well infrared photodetectors were studied for absorption enhancement of the quantum wells. The all-semiconductor plasmonic cavity is constructed by heavily doped GaAs with a plasmonic behavior in the THz regime. The plasmonic behavior of GaAs was thoroughly studied by taking into account the carrier density dependent effective mass of electrons. An optimal doping level for GaAs to be the most metallic is selected since the plasma frequency of the doped GaAs varies nonmonotonically with the carrier density. By tuning the absorption competition between the quantum wells and the doped GaAs meanwhile keeping the system at a critical coupling status, the absorptance of the quantum wells is prominently enhanced by 13.2 times compared to that in a standard device. The all-semiconductor plasmonic cavity integrated quantum well photodetectors can be polarization sensitive (polarization extinction ratio > 900) when the plasmonic cavity is shaped into an anisotropic form. The good tolerance of the incident angle is favored for wide-field infrared detection. The GaAs plasmonic cavities are demonstrated to be effective when integrated at a pixel level, indicating a good compatibility with focal plane arrays.