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Ninno D, Gell MA, Jaros M. Electronic structure and optical transitions in GaAs-Ga1-xAlxAs(001) superlattices. ACTA ACUST UNITED AC 2000. [DOI: 10.1088/0022-3719/19/20/018] [Citation(s) in RCA: 23] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/11/2022]
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Morrison I, Jaros M, Wong KB. Strain-induced electron states in Si0.75Ge0.25(Si/Si0.5Ge0.5)(001) superlattices. ACTA ACUST UNITED AC 2000. [DOI: 10.1088/0022-3719/19/12/001] [Citation(s) in RCA: 12] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/11/2022]
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Qing Y, Chu-liang Y. The effect of complex band structure and non-parabolicity on sub-bands of GaAs-AlxGa1-xAs heterostructures: band offset. ACTA ACUST UNITED AC 2000. [DOI: 10.1088/0022-3719/20/31/014] [Citation(s) in RCA: 7] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/11/2022]
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Zhang FC, Dai N, Luo H, Samarth N, Dobrowolska M, Furdyna JK, Ram-Mohan LR. Observation of localized above-barrier excitons in type-I superlattices. PHYSICAL REVIEW LETTERS 1992; 68:3220-3223. [PMID: 10045644 DOI: 10.1103/physrevlett.68.3220] [Citation(s) in RCA: 11] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/23/2023]
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Ando T, Wakahara S, Akera H. Connection of envelope functions at semiconductor heterointerfaces. I. Interface matrix calculated in simplest models. PHYSICAL REVIEW. B, CONDENSED MATTER 1989; 40:11609-11618. [PMID: 9991761 DOI: 10.1103/physrevb.40.11609] [Citation(s) in RCA: 43] [Impact Index Per Article: 1.2] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Ando T, Akera H. Connection of envelope functions at semiconductor heterointerfaces. II. Mixings of Gamma and X valleys in GaAs/AlxGa1-xAs. PHYSICAL REVIEW. B, CONDENSED MATTER 1989; 40:11619-11633. [PMID: 9991762 DOI: 10.1103/physrevb.40.11619] [Citation(s) in RCA: 59] [Impact Index Per Article: 1.7] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Polatoglou HM, Kanellis G, Theodorou G. Calculation and interpretation of the electronic properties of superlattices. PHYSICAL REVIEW. B, CONDENSED MATTER 1989; 39:8483-8487. [PMID: 9947562 DOI: 10.1103/physrevb.39.8483] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/07/2022]
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Turton RJ, Jaros M, Morrison I. Electronic band structure and nonparabolicity in strained-layer Si-Si1-xGex superlattices. PHYSICAL REVIEW. B, CONDENSED MATTER 1988; 38:8397-8405. [PMID: 9945598 DOI: 10.1103/physrevb.38.8397] [Citation(s) in RCA: 7] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/11/2023]
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Wong KB, Jaros M, Morrison I, Hagon JP. Electronic structure and optical properties of Si-Ge superlattices. PHYSICAL REVIEW LETTERS 1988; 60:2221-2224. [PMID: 10038291 DOI: 10.1103/physrevlett.60.2221] [Citation(s) in RCA: 17] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/23/2023]
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Morrison I, Jaros M. Electronic and optical properties of ultrathin Si/Ge (001) superlattices. PHYSICAL REVIEW. B, CONDENSED MATTER 1988; 37:916-921. [PMID: 9944587 DOI: 10.1103/physrevb.37.916] [Citation(s) in RCA: 16] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/11/2023]
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Morrison I, Jaros M, Wong KB. Strain-induced confinement in Si0.75Ge0.25 (Si/Si0.5Ge0.5) (001) superlattice systems. PHYSICAL REVIEW. B, CONDENSED MATTER 1987; 35:9693-9707. [PMID: 9941395 DOI: 10.1103/physrevb.35.9693] [Citation(s) in RCA: 29] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/11/2023]
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Danan G, Etienne B, Mollot F, Planel R, Jean-Louis AM, Alexandre F, Jusserand B, Marzin JY, Savary H, Sermage B. Optical evidence of the direct-to-indirect-gap transition in GaAs-AlAs short-period superlattices. PHYSICAL REVIEW. B, CONDENSED MATTER 1987; 35:6207-6212. [PMID: 9940852 DOI: 10.1103/physrevb.35.6207] [Citation(s) in RCA: 93] [Impact Index Per Article: 2.5] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/11/2023]
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Wong KB, Jaros M, Hagon JP. Confined electron states in GaAs-Ga1-xAlxAs quantum wires. PHYSICAL REVIEW. B, CONDENSED MATTER 1987; 35:2463-2466. [PMID: 9941700 DOI: 10.1103/physrevb.35.2463] [Citation(s) in RCA: 15] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/11/2023]
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Song JJ, Yoon YS, Fedotowsky A, Kim YB, Schulman JN, Tu CW, Huang D, Morkoc H. Barrier-width dependence of optical transitions involving unconfined energy states in GaAs-AlxGa1-xAs superlattices. PHYSICAL REVIEW. B, CONDENSED MATTER 1986; 34:8958-8962. [PMID: 9939628 DOI: 10.1103/physrevb.34.8958] [Citation(s) in RCA: 20] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/11/2023]
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