Experimental Monte Carlo quantum process certification

Experimental implementations of quantum information processing have now reached a level of sophistication where quantum process tomography is impractical. The number of experimental settings as well as the computational cost of the data postprocessing now translates to days of effort to characterize even experiments with as few as 8 qubits. Recently a more practical approach to determine the fidelity of an experimental quantum process has been proposed, where the experimental data are compared directly with an ideal process using Monte Carlo sampling. Here, we present an experimental implementation of this scheme in a circuit quantum electrodynamics setup to determine the fidelity of 2-qubit gates, such as the CPHASE and the CNOT gate, and 3-qubit gates, such as the Toffoli gate and two sequential CPHASE gates.

Fast emission dynamics in droplet epitaxy GaAs ring-disk nanostructures integrated on Si

The emission dynamics in GaAs/AlGaAs coupled ring-disk (CRD) quantum structures fabricated on silicon substrates is presented. The CRD structures are self-assembled via droplet epitaxy, a growth technique which, due to its low thermal budget, is compatible with the monolithic integration of III-V devices on Si based electronic circuits. Continuous wave, time resolved photoluminescence and theoretical calculations in the effective mass approximations are presented for the assessment of the electronic and carrier properties of the CRDs. The CRDs show a fast carrier dynamics which is expected to be suitable for ultrafast optical switching applications integrated on silicon.

Benchmarking a quantum teleportation protocol in superconducting circuits using tomography and an entanglement witness

Teleportation of a quantum state may be used for distributing entanglement between distant qubits in quantum communication and for quantum computation. Here we demonstrate the implementation of a teleportation protocol, up to the single-shot measurement step, with superconducting qubits coupled to a microwave resonator. Using full quantum state tomography and evaluating an entanglement witness, we show that the protocol generates a genuine tripartite entangled state of all three qubits. Calculating the projection of the measured density matrix onto the basis states of two qubits allows us to reconstruct the teleported state. Repeating this procedure for a complete set of input states we find an average output state fidelity of 86%.

Nitrogen-doped graphene: efficient growth, structure, and electronic properties

A novel strategy for efficient growth of nitrogen-doped graphene (N-graphene) on a large scale from s-triazine molecules is presented. The growth process has been unveiled in situ using time-dependent photoemission. It has been established that a postannealing of N-graphene after gold intercalation causes a conversion of the N environment from pyridinic to graphitic, allowing to obtain more than 80% of all embedded nitrogen in graphitic form, which is essential for the electron doping in graphene. A band gap, a doping level of 300 meV, and a charge-carrier concentration of ∼8×10(12) electrons per cm2, induced by 0.4 atom % of graphitic nitrogen, have been detected by angle-resolved photoemission spectroscopy, which offers great promise for implementation of this system in next generation electronic devices.

Implementation of a Toffoli gate with superconducting circuits

The Toffoli gate is a three-quantum-bit (three-qubit) operation that inverts the state of a target qubit conditioned on the state of two control qubits. It makes universal reversible classical computation possible and, together with a Hadamard gate, forms a universal set of gates in quantum computation. It is also a key element in quantum error correction schemes. The Toffoli gate has been implemented in nuclear magnetic resonance, linear optics and ion trap systems. Experiments with superconducting qubits have also shown significant progress recently: two-qubit algorithms and two-qubit process tomography have been implemented, three-qubit entangled states have been prepared, first steps towards quantum teleportation have been taken and work on quantum computing architectures has been done. Implementation of the Toffoli gate with only single- and two-qubit gates requires six controlled-NOT gates and ten single-qubit operations, and has not been realized in any system owing to current limits on coherence. Here we implement a Toffoli gate with three superconducting transmon qubits coupled to a microwave resonator. By exploiting the third energy level of the transmon qubits, we have significantly reduced the number of elementary gates needed for the implementation of the Toffoli gate, relative to that required in theoretical proposals using only two-level systems. Using full process tomography and Monte Carlo process certification, we completely characterize the Toffoli gate acting on three independent qubits, measuring a fidelity of 68.5 ± 0.5 per cent. A similar approach to realizing characteristic features of a Toffoli-class gate has been demonstrated with two qubits and a resonator and achieved a limited characterization considering only the phase fidelity. Our results reinforce the potential of macroscopic superconducting qubits for the implementation of complex quantum operations with the possibility of quantum error correction.

The influence of nanoparticle architecture on latex film formation and healing properties

We present a study of chain interdiffusion in films formed by specially architectured PBMA nanoparticles by Förster Resonance Energy Transfer -FRET. Polymer nanoparticles contained linear chains with narrower molecular weight distributions than other previous reports, allowing a more detailed study. Apparent fractions of mixing and diffusion coefficients, determined from the quantum efficiency of energy transfer, were used to characterize the interdiffusion mechanism in the different films. The resistance of the films to dissolution by a good solvent was finally correlated with the interdiffusion results, in order to get information about film healing. We concluded that whenever interdiffusion occurs between nanoparticles containing linear chains and fully cross-linked nanoparticles, healing becomes more effective in spite of showing slower interdiffusion. We also observed that particles with longer chains are more effective for film healing. Finally, we concluded that interdiffusion occurs both ways across interfaces in blends formed by particles swollen with linear chains of different molecular weights.

Restoration of vision after optic nerve lesions with noninvasive transorbital alternating current stimulation: a clinical observational study

BACKGROUND

Non-invasive current stimulation can induce neuroplastic changes in the normal brain, including visual system structures. Because it is not known if such plasticity is of clinical value, we wished to learn if vision restoration can be induced after optic nerve damage.

METHODS

In an open-label, clinical observational study 446 patients with optic nerve lesions were treated with non-invasive repetitive transorbital alternating current stimulation (rtACS). Current bursts (<1000 μA, 5-20 Hz) were applied to induce phosphenes for one or two 10-day stimulation periods. Efficacy was assessed by monocular measurements of visual acuity and visual field (VF) size. EEG recordings at rest (n = 68) were made before and after treatment and global power spectra changes were analyzed.

RESULTS

rtACS improved VF size in the right and left eye by 7.1% and 9.3% (p < 0.001), respectively. VF enlargements were present in 40.4% of right and 49.5% of left eyes. Visual acuity (VA) significantly increased in both eyes (right = 0.02, left = 0.015; p < 0.001). A second 10-day course was conducted 6 months in a subset of 62 patients and resulted in additional significant improvements of VA. Analysis of EEG power spectra revealed that VA and VF improvements were associated with increased alpha power. Increased theta power was observed in patients that had only VF enlargements but no VA change. In contrast, non-responders had increased delta power spectra in frontal and occipital areas.

CONCLUSIONS

rtACS leads to long-lasting improvements in VA and VF size and after-effects in EEG power spectra. Because physiological and clinical parameters are correlated we hypothesize that rtACS enhances plasticity by inducing synchronization in different cortical regions, but the precise mechanisms needs further clarification. These encouraging results require confirmation by controlled clinical trials.

Tuned transition from quantum to classical for macroscopic quantum states

The boundary between the classical and quantum worlds has been intensely studied. It remains fascinating to explore how far the quantum concept can reach with use of specially fabricated elements. Here we employ a tunable flux qubit with basis states having persistent currents of 1  μA carried by a million pairs of electrons. By tuning the tunnel barrier between these states we see a crossover from quantum to classical. Released from nonequilibrium, the system exhibits spontaneous coherent oscillations. For high barriers the lifetime of the states increases dramatically while the tunneling period approaches the phase coherence time and the oscillations fade away.

Practical Work of Adhesion of Polymer Coatings Studied by Laser Induced Delamination

Laser Induced Delamination is a novel technique aimed at measuring the practical work of adhesion of thin polymer coatings on metal substrates. In this technique a laser pulse is used to create initial blisters which initiate further delamination of the film under the blister pressure. A simple elastic model is developed to describe the formation of the blisters. The model predicts the values for the blister height and pressure, which are in fair agreement with the experimental results. In order to account for possible plastic deformations, simulations using a finite element model with a mixed mode cohesive zone were carried out. The calculated stress fields are in agreement with those predicted by the elastic model suggesting that the contribution of plastic deformation to the measured work of fracture is rather limited.

Measurements are carried out on a number of samples, presenting ECCS steel substrate covered with 35 μm thick polyethylene terephthalate (PET) film. The tensile stresses created in the film at the interface required for delamination are estimated at 7-8 MPa, which corresponds to the practical work of adhesion G = (0.6± 0.1) J/m2.

Ge-rich islands grown on patterned Si substrates by low-energy plasma-enhanced chemical vapour deposition

Si(1-x)Ge(x) islands grown on Si patterned substrates have received considerable attention during the last decade for potential applications in microelectronics and optoelectronics. In this work we propose a new methodology to grow Ge-rich islands using a chemical vapour deposition technique. Electron-beam lithography is used to pre-pattern Si substrates, creating material traps. Epitaxial deposition of thin Ge films by low-energy plasma-enhanced chemical vapour deposition then leads to the formation of Ge-rich Si(1-x)Ge(x) islands (x > 0.8) with a homogeneous size distribution, precisely positioned with respect to the substrate pattern. The island morphology was characterized by atomic force microscopy, and the Ge content and strain in the islands was studied by μRaman spectroscopy. This characterization indicates a uniform distribution of islands with high Ge content and low strain: this suggests that the relatively high growth rate (0.1 nm s(-1)) and low temperature (650 °C) used is able to limit Si intermixing, while maintaining a long enough adatom diffusion length to prevent nucleation of islands outside pits. This offers the novel possibility of using these Ge-rich islands to induce strain in a Si cap.

Ordered Arrays of SiGe Islands from Low-Energy PECVD

SiGe islands have been proposed for applications in the fields of microelectronics, optoelectronics and thermoelectrics. Although most of the works in literature are based on MBE, one of the possible advantages of low-energy plasma-enhanced chemical vapor deposition (LEPECVD) is a wider range of deposition rates, which in turn results in the possibility of growing islands with a high Ge concentration. We will show that LEPECVD can be effectively used for the controlled growth of ordered arrays of SiGe islands. In order to control the nucleation of the islands, patterned Si (001) substrates were obtained by e-beam lithography (EBL) and dry etching. We realized periodic circular pits with diameters ranging from 80 to 300 nm and depths from 65 to 75 nm. Subsequently, thin films (0.8-3.2 nm) of pure Ge were deposited by LEPECVD, resulting in regular and uniform arrays of Ge-rich islands. LEPECVD allowed the use of a wide range of growth rates (0.01-0.1 nm s(-1)) and substrates temperatures (600-750°C), so that the Ge content of the islands could be varied. Island morphology was characterized by AFM, while μ-Raman was used to analyze the Ge content inside the islands and the composition differences between islands on patterned and unpatterned areas of the substrate.

Growth Interruption Effect on the Fabrication of GaAs Concentric Multiple Rings by Droplet Epitaxy

WE PRESENT THE MOLECULAR BEAM EPITAXY FABRICATION AND OPTICAL PROPERTIES OF COMPLEX GAAS NANOSTRUCTURES BY DROPLET EPITAXY: concentric triple quantum rings. A significant difference was found between the volumes of the original droplets and the final GaAs structures. By means of atomic force microscopy and photoluminescence spectroscopy, we found that a thin GaAs quantum well-like layer is developed all over the substrate during the growth interruption times, caused by the migration of Ga in a low As background.

Strong coupling of a quantum oscillator to a flux qubit at its symmetry point

A flux qubit biased at its symmetry point shows a minimum in the energy splitting (the gap), providing protection against flux noise. We have fabricated a qubit of which the gap can be tuned fast and have coupled this qubit strongly to an LC oscillator. We show full spectroscopy of the qubit-oscillator system and generate vacuum Rabi oscillations. When the gap is made equal to the oscillator frequency ν(osc) we find the largest vacuum Rabi splitting of ∼0.1 ν(osc). Here being at resonance coincides with the optimal coherence of the symmetry point.

Concentric Multiple Rings by Droplet Epitaxy: Fabrication and Study of the Morphological Anisotropy

We present the Molecular Beam Epitaxy fabrication of complex GaAs/AlGaAs nanostructures by Droplet Epitaxy, characterized by the presence of concentric multiple rings. We propose an innovative experimental procedure that allows the fabrication of individual portions of the structure, controlling their diameter by only changing the substrate temperature. The obtained nanocrystals show a significant anisotropy between [110] and [1-10] crystallographic directions, which can be ascribed to different activation energies for the Ga atoms migration processes.

Photoluminescence Study of Low Thermal Budget III-V Nanostructures on Silicon by Droplet Epitaxy

We present of a detailed photoluminescence characterization of high efficiency GaAs/AlGaAs quantum nanostructures grown on silicon substrates. The whole process of formation of the GaAs/AlGaAs active layer was realized via droplet epitaxy and migration enhanced epitaxy maintaining the growth temperature ≤350°C, thus resulting in a low thermal budget procedure compatible with back-end integration of the fabricated materials on integrated circuits.

Self-assembled GaAs/AlGaAs coupled quantum ring-disk structures by droplet epitaxy

The fabrication, by droplet epitaxy, of a class of quantum nanostructures characterized by a regular, nanometres high, flat disks with a diameter of hundreds of nanometres and a hole at the centre encircled by a ring a few nanometres high, is presented here. A detailed analysis of the growth kinetics performed via in situ and ex situ probes allows us to propose a working model for the formation of these structures.

Tuning the gap of a superconducting flux qubit

We experimentally demonstrate the in situ tunability of the minimum energy splitting (gap) of a superconducting flux qubit by means of an additional flux loop. Pulses applied via a local control line allow us to tune the gap over a range of several GHz on a nanosecond time scale. The strong flux sensitivity of the gap (up to approximately 0.7 GHz/mPhi0) opens up the possibility to create different types of tunable couplings that are effective at the degeneracy point of the qubit. We investigate the dependence of the relaxation time and the Rabi frequency on the qubit gap.