ACTH expression in synovium of patients with rheumatoid arthritis and Lewis rats with adjuvant arthritis

Abstract Adrenocorticotropic hormone (ACTH) and another pro-opiomelanocortin-derived neuropeptide, β-endorphin (β-End), are stimulated by corticotropin-releasing hormone (CRH) at the anterior pituitary. CRH and β-End have predominantly proinflammatory effects in peripheral inflammatory sites. We have supposed that inflammatory stimuli develop ACTH as well as β-End. In this study, we investigated the expression of ACTH in inflamed synovial tissue from patients with rheumatoid arthritis (RA) and osteoarthritis (OA), and at inflammatory joints with adjuvant-induced arthritis (AA) in female Lewis (LEW/N) rats. The expression of ACTH immunostaining was significantly greater in synovium of RA patients than in that of OA patients (P < 0.0001), and correlated with the extent of inflammatory mononuclear cell infiltration. Extensive and intense intracellular ACTH immunostaining, which correlated with the advance in arthritis score, was observed in the synovial lining layer, inflammatory mononuclear cells, and fibroblast-like cells of synovium and chondrocytes in LEW/N rats with AA. In addition, we performed double immunostaining of the same sections from arthritic joints in rats with anti-ACTH and anti-CRH antibodies. ACTH and CRH colocalized in inflammatory mononuclear cells and fibroblast-like cells. ACTH may play a role in the pathogenesis of RA as well as CRH.

A vasodilating β1 blocker celiprolol inhibits muscular release of uric acid precursor in patients with essential hypertension

Although nonvasodilating β1 blockers increase the levels of uric acid in serum, it is not known whether vasodilating β1 blockers have a similar effect. In the present study, we evaluated the effect of celiprolol on the release of hypoxanthine, a uric acid precursor, from muscles after an exercise. We used the semi-ischemic forearm test to examine the release of lactate (ΔLAC), ammonia (ΔAmm), and hypoxanthine (ΔHX) before and 4, 10, and 60 min after an exercise in 18 hypertensive patients as well as 4 normotensive subjects. Before celiprolol treatment, all the levels of ΔHX and ΔAmm, and ΔLAC were increased by semi-ischemic exercise in hypertensive patients, and the increases were remarkably larger than those in normotensive subjects. Celiprolol decreased both systolic and diastolic pressure. It also decreased the levels of ΔHX and ΔAmm without changes in ΔLAC after an exercise. These findings also were confirmed by summation of each metabolite (ΣΔMetabolites). Celiprolol caused a marginal decrease of serum uric acid, but the difference was not statistically significant. On the other hand, nonvasodilating β1 blockers did not suppress the levels of ΔHX and ΔAmm, whereas they significantly increased ΔLAC after an exercise. Celiprolol improved energy metabolism in skeletal muscles. It suppressed HX production and consequently did not adversely affect serum uric acid levels.

Quantitative evaluation of cryptococcal pathogenesis and antifungal drugs using a silkworm infection model with Cryptococcus neoformans

AIMS

To develop an in vivo system that could quantitatively evaluate the therapeutic effects of antifungal drugs using a silkworm infection model with Cryptococcus neoformans.

METHODS AND RESULTS

Silkworms reared at 37°C died after an injection of viable serotype A C. neoformans fungus into the haemolymph. The serotype A C. neoformans, which is known to have higher mammal pathogenicity than the serotype D, was also more virulent against the silkworm. Furthermore, the deletion mutants of genes gpa1, pka1 and cna1, which are genes known to be necessary for the pathogenesis in mammals, showed an increase in the number of fungal cells necessary to kill half of the silkworm population (LD(50) value). Antifungal drugs, amphotericin B, flucytosine, fluconazole and ketoconazole, showed therapeutic effects in silkworms infected with C. neoformans. However, amphotericin B was not therapeutically effective when injected into the silkworm intestine, comparable to the fact that amphotericin B is not absorbed by the intestine in mammals.

CONCLUSIONS

The silkworm-C. neoformans infection model is useful for evaluating the therapeutic effects of antifungal drugs.

SIGNIFICANCE AND IMPACT OF THE STUDY

The silkworm infection model has various advantages for screening antifungal drug candidates. We can also elucidate the cryptococcal pathogenesis and evaluate the in vivo pharmacokinetics and toxicity of each drug.

The pH Dependent Uptake of Enoxacin by Rat Intestinal Brush-border Membrane Vesicles

The mechanism of the intestinal transport of enoxacin, an orally active fluoroquinolone antibiotic, has been investigated using brush-border membrane vesicles isolated from rat small intestine. The initial rate and time-course of enoxacin uptake were considerably dependent upon the medium pH (pH 5·5 &gt; pH 7·5) and upon the percent ionization of the carboxyl group (pKa 6·2, anionic charge), namely, the degree of uptake of cationic form was higher than that of the zwitterionic form. There was evidence of transport into the intravesicular space as shown by the effect of extravesicular medium osmolarity on enoxacin uptake at steady state (30 min). This transport across the brush-border membrane was stimulated by the valinomycin-induced K+-diffusion potential (interior negative) and an outward H+-diffusion potential. Furthermore, changing the pH of the medium from 5·5 to 7·5 significantly decreased the effect of valinomycin-induced K+-diffusion potential on the enoxacin uptake. These results suggest that the uptake behaviour of the cationic form of enoxacin plays an important role in the intestinal absorption process of enoxacin.

Chemical Structure of Native Oxide Grown on Hydrogenterminated Silicon Surfaces

Chemical bonding features and suboxide compositions in native oxide grown on chemically-cleaned hydrogen-terminated Si(100) surfaces stored in pure water have been studied by using surface sensitive infrared spectroscopy and x-ray photoelectron spectroscopy. The LO phonon peak for the native oxide is located at 1210cm−1, which is shifted to a significantly lower wavenumber side than the ultrathin thermal oxide peak at 1250cm−1. This is because an appreciable amount of SiHx bonds are incorporated in the native oxide/Si interface and such hydrogen termination in the network dramatically reduces strained bonds in the interface. Very weak Si2+ suboxide signal from the oxide grown in pure water is also explained by the incorporated SiHx bonds which interrupt the Si2+ suboxide formation in the interface.

Cleaning and Oxidation of Heavily Doped Si Surfaces

HF-treated Si surfaces and the oxidation kinetics in pure water or in clean room air have systematically been studied by x-ray photoelectron spectroscopy (XPS). The oxidation of heavily-doped n-type Si appears to proceed parallel to the surface, resulting in the layer-by-layer oxidation. The oxide growth rate in pure water for heavily-doped n-type Si is significantly higher than that of heavily-doped ptype Si. This is explained by the electron tunneling from the Si conduction band to adsorbed O2 molecules to form the O2 state. O2 ions easily decompose and induce a surface electric field, enhancing the oxidation rate. The growth rate of native oxide on heavily-doped n-type Si is less sensitive to the crystallographic orientations than the case of lightly doped Si where the steric hindrance against oxygen molecules significantly lowers the oxidation rate of the (110) and (111) surfaces. We suggest that the decomposed oxygen can penetrate into Si without steric hindrance. It is also found that the oxidation of heavily-doped n-type Si in pure water is effectively suppressed by adding a small amount (10 ∼ 3600 ppm) of HCI.

Layer-by-Layer Oxidation of Silicon

Growth kinetics of native oxide on HF-treated Si surfaces terminated with Si-H bonds has been studied by angle-resolved x-ray photoelectron spectroscopy. The oxide growth rate in pure water for an n+ Si(100) surface is significantly high compared to that of p+, and the n or p type Si oxidation rate is in between. This is explained by the formation of ions through electron transfer from Si to adsorbed O2 molecules and the resulting enhancement of the oxidation rate. The oxide growth on Si(100) is faster than (110) and (111) as interpreted in terms of the steric hindrance for molecular oxygen adsorption on the hydrogen terminated silicon 1×1 surface structures.

Shape Memory Behavior of Ti-Ni Thin Films Annealed at Various Temperatures

Ti-Ni thin films with three different types of compositions, titanium-rich Ti-Ni, near equiatomic TiNi and nickel-rich Ti-Ni were prepared by sputtering. The sputter-deposited films were annealed at various temperatures between 773 and 973K in order to crystallize. After the heat treatment, the shape memory behavior was examined with a thermomechanical tester. The shape memory behavior of the near equiatomic composition films was not affected by the heat treatment. On the other hand, the shape memory behavior of the other composition films strongly depended on the annealing temperature. As the annealing temperature increases, the martensitic and reverse martensitic transformation temperatures of the nickel-rich films decreased and those of the titanium-rich films increased. These opposite behaviors of the transformation temperatures can be explained by the opposite dependence of the precipitation of the second phase on the annealing temperature. All the nickel-rich films exhibited good shape memory effect over a wide range of stress, while all the titanium-rich films exhibited a small plastic strain only in the stress range where the shape changes associated with both the R-phase and the martensitic transformations were observed.

Self-Assembling Formation of Silicon Quantum Dots by Low Pressure Chemical Vapor Deposition

The growth of Si dots on thermally-grown SiO2/c-Si from a thermal decomposition of pure silane has been systematically studied in the temperature range from 500 to 650°C. It has been suggested mat the Si dot height and dot diameter on as-grown SiO2 are rate-limited by the cohesive action of adsorbed precursors and the thermal decomposition of silane on Si nucleation sites, respectively. The nucleation site on as-grown SiO2 is likely to be generated by the thermal dissociation of surface Si-O bonds. It has been also found that in Si dot formation on OH-terminated SiO2 surface the nucleation density is dramatically enhanced and consequently the dot size and its distribution become small. This implies that surface OH bonds can provide the nucleation sites.

Structural Characterization of Porous Silicon Fabricated by Electrochemical and Chemical Dissolution of Si Wafers

The structure of porous silicon exhibiting efficient visible photoluminescence has been characterized by using Fourier transformed infrared absorption, Raman scattering and x-ray diffraction. It is shown that the lattice spacing in the porous Si layer expands by about 0.3% in the direction perpendicular to the surface and also a partially disordered structure is existing. Electron beam irradiation causes desorption of hydrogen and fluorine bonds which terminate the surface, resulting in the quenching of the visible luminescence. The chemical etching of such layer has led to complete recovery of the luminescence intensity as well as the hydrogen and fluorine bonds termination.