Oxidation of graphene 'bow tie' nanofuses for permanent, write-once-read-many data storage devices

We have fabricated nanoscale fuses from CVD graphene sheets with a 'bow tie' geometry for write-once-read-many data storage applications. The fuses are programmed using thermal oxidation driven by Joule heating. Fuses that were 250 nm wide with 2.5 μm between contact pads were programmed with average voltages and powers of 4.9 V and 2.1 mW, respectively. The required voltages and powers decrease with decreasing fuse sizes. Graphene shows extreme chemical and electronic stability; fuses require temperatures of about 400 °C for oxidation, indicating that they are excellent candidates for permanent data storage. To further demonstrate this stability, fuses were subjected to applied biases in excess of typical read voltages; stable currents were observed when a voltage of 10 V was applied to the devices in the off state and 1 V in the on state for 90 h each.

Complex dynamics and scale invariance of one-dimensional memristive networks

Memristive systems, namely, resistive systems with memory, are currently attracting considerable attention. Here we show that even the simplest one-dimensional network formed by the most common memristive elements with voltage threshold bears nontrivial physical properties. In particular, by taking into account the single element variability we find (1) dynamical acceleration and slowing down of the total resistance in adiabatic processes, (2) dependence of the final state on the history of the input signal with same initial conditions, (3) existence of switching avalanches in memristive ladders, and (4) independence of the dynamics voltage threshold with respect to the number of memristive elements in the network (scale invariance). An important criterion for this scale invariance is the presence of memristive systems with very small threshold voltages in the ensemble. These results elucidate the role of memory in complex networks and are relevant to technological applications of these systems.

Fluctuation-response relations for nonequilibrium diffusions with memory

Strong interaction with other particles or feedback from the medium on a Brownian particle entail memory effects in the effective dynamics. That motivates the extension of the fluctuation-dissipation theorem to nonequilibrium Langevin systems with memory. An important application is to the nonequilibrium modification of the Sutherland-Einstein relation between diffusion and mobility in the case of strong memory. Nonequilibrium corrections include the time correlation between the dynamical activity and the velocity of the particle, which in turn leads to information about the correlations between the driving force and the particle's displacement.

Hydrophobic nanoparticle-based nanocomposite films using in situ ligand exchange layer-by-layer assembly and their nonvolatile memory applications

A robust method for preparing nanocomposite multilayers was developed to facilitate the assembly of well-defined hydrophobic nanoparticles (i.e., metal and transition metal oxide NPs) with a wide range of functionalities. The resulting multilayers were stable in both organic and aqueous media and were characterized by a high NP packing density. For example, inorganic NPs (including Ag, Au, Pd, Fe₃O₄, MnO₂) dispersed in organic media [corrected]were shown to undergo layer-by-layer assembly with amine-functionalized polymers to form nanocomposite multilayers while incurring minimal physical and chemical degradation of the inorganic NPs. In addition, the nanocomposite multilayer films formed onto flat and colloidal substrates could directly induce the adsorption of the electrostatically charged layers without the need for additional surface treatments. This approach is applicable to the preparation of electronic film devices, such as nonvolatile memory devices requiring a high memory performance (ON/OFF current ratio >10(3) and good memory stability).

Fabrication of flexible, all-reduced graphene oxide non-volatile memory devices

A flexible, all reduced graphene oxide non-volatile memory device, with lightly reduced GO as an active layer and highly reduced GO as both top and bottom electrodes, is fabricated by a full-solution process and its performance is characterized. It provides a convenient method to construct other all-carbon devices.

Physical electro-thermal model of resistive switching in bi-layered resistance-change memory

Tantalum-oxide-based bi-layered resistance-change memories (RRAMs) have recently improved greatly with regard to their memory performances. The formation and rupture of conductive filaments is generally known to be the mechanism that underlies resistive switching. The nature of the filament has been studied intensively and several phenomenological models have consistently predicted the resistance-change behavior. However, a physics-based model that describes a complete bi-layered RRAM structure has not yet been demonstrated. Here, a complete electro-thermal resistive switching model based on the finite element method is proposed. The migration of oxygen vacancies is simulated by the local temperature and electric field derived from carrier continuity and heat equations fully coupled in a 3-D geometry, which considers a complete bi-layered structure that includes the top and bottom electrodes. The proposed model accurately accounts for the set/reset characteristics, which provides an in-depth understanding of the nature of resistive switching.

Scaling effect on unipolar and bipolar resistive switching of metal oxides

Electrically driven resistance change in metal oxides opens up an interdisciplinary research field for next-generation non-volatile memory. Resistive switching exhibits an electrical polarity dependent "bipolar-switching" and a polarity independent "unipolar-switching", however tailoring the electrical polarity has been a challenging issue. Here we demonstrate a scaling effect on the emergence of the electrical polarity by examining the resistive switching behaviors of Pt/oxide/Pt junctions over 8 orders of magnitudes in the areas. We show that the emergence of two electrical polarities can be categorised as a diagram of an electric field and a cell area. This trend is qualitatively common for various oxides including NiOx, CoOx, and TiO(2-x). We reveal the intrinsic difference between unipolar switching and bipolar switching on the area dependence, which causes a diversity of an electrical polarity for various resistive switching devices with different geometries. This will provide a foundation for tailoring resistive switching behaviors of metal oxides.

Coexistence of high performance resistance and capacitance memory based on multilayered metal-oxide structures

The Au/DyMnO₃/Nb:SrTiO₃/Au stack was demonstrated to be not only a high performance memristor but also a good memcapacitor. The switching time is below 10 ns, the retention is longer than 10(5) s, and the change ratio of resistance (or capacitance) is larger than 100 over the 10(8) switching cycles. Moreover, this stack has a broad range of intermediate states that are tunable by the operating voltages. It is indicated that the memory effects originate from the Nb:SrTiO₃/Au junction where the barrier profile is electrically modulated. The serial connected Au/DyMnO₃/Nb:SrTiO₃ stack behaves as a high nonlinear resistor paralleling with a capacitor, which raises the capacitance change ratio and enhances the memory stability of the device.

Effects of crystallization and non-lattice oxygen atoms on Cu(x)O-based resistive switching memory

In this work, the effects of crystallization and non-lattice oxygen atoms on the Cu(x)O-based memory device are investigated. The 150 degrees C-deposited Cu(x)O film possesses a larger amount of non-lattice oxygen atoms than those deposited at the higher temperatures, leading to the formation of AIOy interface layer during the sputtering deposition of Al top electrode. Resistive switching occurring within the interface layer is easily controlled, so the set and reset voltages are decreased. In addition, it is demonstrated that the set and reset processes agree with the formation and rupture of a conductive filament in the Cu(x)O film. The 150 degrees C-deposited Cu(x)O-based memory device with good non-volatility is possibly used in the next-generation non-volatile memory.

CAFM investigations of filamentary conduction in Cu2O ReRAM devices fabricated using stencil lithography technique

With the objective of understanding the role of size and current level of filamentary regions on the resistive switching parameters, detailed conductive atomic force microscope investigations of resistive memory cells having different dimensions have been carried out in this study. Cu-Cu(2)O-Ti memory cells having dimensions of 150, 50 and 25 μm have been fabricated on the same substrate using a stencil lithography technique. The dependence of resistive switching parameters on the device dimensions can be directly related to the average size, current level of the filaments and difference in these parameters between the low resistance state (LRS) and high resistance state (HRS). It is observed that the large increase in the ratio of current in the two states in cells having lower dimensions is mainly due to the smaller number of conducting regions in the HRS, indicating efficient switching from the LRS to the HRS at lower dimensions.

File formats commonly used in mass spectrometry proteomics

The application of mass spectrometry (MS) to the analysis of proteomes has enabled the high-throughput identification and abundance measurement of hundreds to thousands of proteins per experiment. However, the formidable informatics challenge associated with analyzing MS data has required a wide variety of data file formats to encode the complex data types associated with MS workflows. These formats encompass the encoding of input instruction for instruments, output products of the instruments, and several levels of information and results used by and produced by the informatics analysis tools. A brief overview of the most common file formats in use today is presented here, along with a discussion of related topics.

Flexible non-volatile ferroelectric polymer memory with gate-controlled multilevel operation

A flexible field-effect transistor with a poly(3-hexylthiophene) (P3HT) active channel and a ferroelectric poly(vinlyidene fluoride-co-trifluoro ethylene) (PVDF-TrFE) insulator exhibits gate-voltage-controllable multilevel non-volatile memory characteristics with highly reliable data retention and endurance.

Observation of nonvolatile resistive memory switching characteristics in Ag/graphene-oxide/Ag devices

In this paper, we report highly stable and bipolar resistive switching effects of Ag/Graphene oxide thinfilm/Ag devices. The graphene-oxide (GO) thinfilms were prepared on Ag/SiO2/Si substrates by spin-coating technique. The Ag/GO/Ag devices showed a steady and bipolar resistive switching characteristic. The resistance switching from low resistance state (LRS) and high resistance state (HRS) with the resistance ratio of HRS to LRS of about 10 which was attained at a voltage bias of 0.1 V. Based on the filamentary conduction model, the dominant conduction mechanism of switching effect was well explained. Our results show GO can be a promising candidate for future development of nonvolatile memory devices.

Photo-stimulated resistive switching of ZnO nanorods

Resistive switching memory devices are promising candidates for emerging memory technologies because they yield outstanding device performance. Storage mechanisms for achieving high-density memory applications have been developed; however, so far many of them exhibit typical resistive switching behavior from the limited controlling conditions. In this study, we introduce photons as an unconventional stimulus for activating resistive switching behaviors. First, we compare the resistive switching behavior in light and dark conditions to describe how resistive switching memories can benefit from photons. Second, we drive the switching of resistance not by the electrical stimulus but only by the modulation of photon. ZnO nanorods were employed as a model system to demonstrate photo-stimulated resistive switching in high-surface-area nanomaterials, in which photo-driven surface states strongly affect their photoconductivity and resistance states.

Transparent and flexible graphene charge-trap memory

A transparent and flexible graphene charge-trap memory (GCTM) composed of a single-layer graphene channel and a 3-dimensional gate stack was fabricated on a polyethylene naphtalate substrate below eutectic temperatures (~110 °C). The GCTM exhibits memory functionality of ~8.6 V memory window and 30% data retention per 10 years, while maintaining ~80% of transparency in the visible wavelength. Under both tensile and compressive stress, the GCTM shows minimal effect on the program/erase states and the on-state current. This can be utilized for transparent and flexible electronics that require integration of logic, memory, and display on a single substrate with high transparency and endurance under flex.

ZnO1-x nanorod arrays/ZnO thin film bilayer structure: from homojunction diode and high-performance memristor to complementary 1D1R application

We present a ZnO(1-x) nanorod array (NR)/ZnO thin film (TF) bilayer structure synthesized at a low temperature, exhibiting a uniquely rectifying characteristic as a homojunction diode and a resistive switching behavior as memory at different biases. The homojunction diode is due to asymmetric Schottky barriers at interfaces of the Pt/ZnO NRs and the ZnO TF/Pt, respectively. The ZnO(1-x) NRs/ZnO TF bilayer structure also shows an excellent resistive switching behavior, including a reduced operation power and enhanced performances resulting from supplements of confined oxygen vacancies by the ZnO(1-x) NRs for rupture and recovery of conducting filaments inside the ZnO TF layer. A hydrophobic behavior with a contact angle of ~125° can be found on the ZnO(1-x) NRs/ZnO TF bilayer structure, demonstrating a self-cleaning effect. Finally, a successful demonstration of complementary 1D1R configurations can be achieved by simply connecting two identical devices back to back in series, realizing the possibility of a low-temperature all-ZnO-based memory system.

Quasi-nonvolatile storage in Ru-doped Bi12SiO20 crystals by two-wavelength holography

Prolonged read-out process of a hologram recorded at near infrared with simultaneous green light exposure is measured in Ru-doped Bi12SiO20 crystal. The experimental results are confirmed by numerical simulations, suggesting two different traps involved in the space-charge transport mechanism. In addition, quasi-permanent holographic recording of image with fast updating speed by using two-wavelength recording is demonstrated.

Integrated head design using a nanobeak antenna for thermally assisted magnetic recording

We propose a near-field optical transducer using a triangular antenna and a thin film structure (wing) to efficiently generate an optical near-field near a magnetic head. A finite-difference time-domain calculation showed that the near-field was efficiently generated at the apex of the antenna when the dimensions of the wing were optimized for efficient delivery of the surface plasmon excited on the wing to the antenna. The calculated light utilization efficiency (ratio between the absorbed power in the recording medium and the input power) was 8%. The temperature distribution on the medium, magnetic field distribution, and magnetization pattern were calculated; the proposed recording head may be capable of an areal recording density of 2.5 Tb/in.(2).

Efficient and robust associative memory from a generalized Bloom filter

We develop a variant of a Bloom filter that is robust to hardware failure and show how it can be used as an efficient associative memory. We define a measure of the information recall and show that our new associative memory is able to recall more than twice as much information as a Hopfield network. The extra efficiency of our associative memory is all the more remarkable as it uses only bits while the Hopfield network uses integers.

Emerging memories: resistive switching mechanisms and current status

The resistance switching behaviour of several materials has recently attracted considerable attention for its application in non-volatile memory (NVM) devices, popularly described as resistive random access memories (RRAMs). RRAM is a type of NVM that uses a material(s) that changes the resistance when a voltage is applied. Resistive switching phenomena have been observed in many oxides: (i) binary transition metal oxides (TMOs), e.g. TiO(2), Cr(2)O(3), FeO(x) and NiO; (ii) perovskite-type complex TMOs that are variously functional, paraelectric, ferroelectric, multiferroic and magnetic, e.g. (Ba,Sr)TiO(3), Pb(Zr(x) Ti(1-x))O(3), BiFeO(3) and Pr(x)Ca(1-x)MnO(3); (iii) large band gap high-k dielectrics, e.g. Al(2)O(3) and Gd(2)O(3); (iv) graphene oxides. In the non-oxide category, higher chalcogenides are front runners, e.g. In(2)Se(3) and In(2)Te(3). Hence, the number of materials showing this technologically interesting behaviour for information storage is enormous. Resistive switching in these materials can form the basis for the next generation of NVM, i.e. RRAM, when current semiconductor memory technology reaches its limit in terms of density. RRAMs may be the high-density and low-cost NVMs of the future. A review on this topic is of importance to focus concentration on the most promising materials to accelerate application into the semiconductor industry. This review is a small effort to realize the ambitious goal of RRAMs. Its basic focus is on resistive switching in various materials with particular emphasis on binary TMOs. It also addresses the current understanding of resistive switching behaviour. Moreover, a brief comparison between RRAMs and memristors is included. The review ends with the current status of RRAMs in terms of stability, scalability and switching speed, which are three important aspects of integration onto semiconductors.

Modeling of the electrostatic coupling between nanocrystals of a disordered nanocrystal floating gate memory

This paper presents a realistic model that explicitly takes into account the electrostatic coupling between the nanocrystals of a disordered layer constituting the floating gate of a non-volatile memory. A statistical study of the neighborhood of a given nanocrystal is carried out, leading to the mean number of neighboring nanocrystals as a function of the radius of the central nanocrystal. We show that the empty neighborhood of every nanocrystal can be represented by an equivalent torus ring in the previous model of a single nanocrystal. Then the effects of charged nanocrystals are taken into account by an appropriate rigid shift of the energy levels of the central nanocrystal. The proposed model is validated by statistical comparisons with exact 3D computations, and the influence of the electrostatic coupling is analyzed and discussed.