Semiconductor Surface Reconstruction: The Structural Chemistry of Two-Dimensional Surface Compounds

Homogenization of reconstructed crystal surfaces: Fick's law of diffusion

Fick's law for the diffusion of adsorbed atoms (adatoms) on crystal surfaces below roughening is generalized to account for surface reconstruction. In this case, material parameters vary spatially at the microscale, and the coarse graining for crystal steps via Taylor expansions is not strictly applicable. By invoking elements of the theory of composites in one independent space dimension, we homogenize the microscale description to derive the macroscopic adatom flux from step kinetics. This approach relies on a multiscale expansion for the adatom density. The effective surface diffusivity is determined through appropriate discrete averages of microscale kinetic parameters.

Anomalous bismuth-stabilized (2x1) reconstructions on GaAs(100) and InP(100) surfaces

First-principles phase diagrams of bismuth-stabilized GaAs- and InP(100) surfaces demonstrate for the first time the presence of anomalous (2x1) reconstructions, which disobey the common electron counting principle. Combining these theoretical results with our scanning-tunneling-microscopy and photoemission measurements, we identify novel (2x1) surface structures, which are composed of symmetric Bi-Bi and asymmetric mixed Bi-As and Bi-P dimers, and find that they are stabilized by stress relief and pseudogap formation.

Generalized electron counting in determination of metal-induced reconstruction of compound semiconductor surfaces

Based on theoretical analysis, first-principles calculations, and experimental observations, we establish a generic guiding principle, embodied in generalized electron counting (GEC), that governs the surface reconstruction of compound semiconductors induced by different metal adsorbates. Within the GEC model, the adsorbates serve as an electron bath, donating or accepting the right number of electrons as the host surface chooses a specific reconstruction that obeys the classic electron-counting model. The predictive power of the GEC model is illustrated for a wide range of metal adsorbates.

REACTIVITY OF THE GERMANIUM SURFACE: Chemical Passivation and Functionalization

With the rapidly changing materials needs of modern microelectronics, germanium provides an opportunity for future-generation devices. Controlling germanium interfaces will be essential for this purpose. We review germanium surface reactivity, beginning with a description of the most commonly used surfaces, Ge(100) and Ge(111). An analysis of oxide formation shows why the poor oxide properties have hindered practical use of germanium to date. This is followed by an examination of alternate means of surface passivation, with particular attention given to sulfide, chloride, and hydride termination. Specific tailoring of the interface properties is possible through organic functionalization. The few solution functionalization methods that have been studied are reviewed. Vacuum functionalization has been studied to a much greater extent, with dative bonding and cycloaddition reactions emerging as principle reaction mechanisms. These are reviewed through molecular reaction studies that demonstrate the versatility of the germanium surface.

Self assembled monolayers on silicon for molecular electronics

We present an overview of various aspects of the self-assembly of organic monolayers on silicon substrates for molecular electronics applications. Different chemical strategies employed for grafting the self-assembled monolayers (SAMs) of alkanes having different chain lengths on native oxide of Si or on bare Si have been reviewed. The utility of different characterization techniques in determination of the thickness, molecular ordering and orientation, surface coverage, growth kinetics and chemical composition of the SAMs has been discussed by choosing appropriate examples. The metal counterelectrodes are an integral part of SAMs for measuring their electrical properties as well as using them for molecular electronic devices. A brief discussion on the variety of options available for the deposition of metal counterelectrodes, that is, soft metal contacts, vapor deposition and soft lithography, has been presented. Various theoretical models, namely, tunneling (direct and Fowler-Nordheim), thermionic emission, Poole-Frenkel emission and hopping conduction, used for explaining the electronic transport in dielectric SAMs have been outlined and, some experimental data on alkane SAMs have been analyzed using these models. It has been found that short alkyl chains show excellent agreement with tunneling models; while more experimental data on long alkyl chains are required to understand their transport mechanism(s). Finally, the concepts and realization of various molecular electronic components, that is, diodes, resonant tunnel diodes, memories and transistors, based on appropriate architecture of SAMs comprising of alkyl chains (sigma- molecule) and conjugated molecules (pi-molecule) have been presented.

Carboxylic acid chemistry at the Ge(100)-2 x 1 interface: bidentate bridging structure formation on a semiconductor surface

The reactions of acetic acid, acetic-d3 acid-d, and formic acid with the Ge(100)-2 x 1 surface have been investigated using multiple internal reflection Fourier transform infrared (MIR-FTIR) spectroscopy, X-ray photoelectron spectroscopy (XPS), and density functional theory (DFT) calculations. The infrared and photoelectron data provide experimental evidence for an O-H dissociation product at 310 K. DFT calculations indicate that the O-H dissociation pathway is significantly favored, both kinetically and thermodynamically, over other potential reaction pathways. All of the carboxylic acids studied exhibit unexpected vibrational modes between 1400 and 1525 cm(-1), which are attributed to the presence of a bidentate bridging structure where both oxygen atoms interact directly with the surface.

First-Principles Modeling of Unpassivated and Surfactant-Passivated Bulk Facets of Wurtzite CdSe: A Model System for Studying the Anisotropic Growth of CdSe Nanocrystals

Equilibrium geometries, surface energies, and surfactant binding energies are calculated for selected bulk facets of wurtzite CdSe with a first-principles approach. Passivation of the surface Cd atoms with alkyl phosphonic acids or amines lowers the surface energy of all facets, except for the polar 000 facet. On the nonpolar facets, the most stable configuration corresponds to full coverage of surface Cd atoms with surfactants, while on the polar 0001 facet it corresponds only to a partial coverage. In addition, the passivated surface energies of the nonpolar facets are in general lower than the passivated polar 0001 facet. Therefore, the polar facets are less stable and less efficiently passivated than the nonpolar facets, and this can rationalize the observed anisotropic growth mechanism of wurtzite nanocrystals in the presence of suitable surfactants.

Atomic structure of the GaAs(001)-c(4x4) surface: first-principles evidence for diversity of heterodimer motifs

The GaAs(001)-c(4x4) surface was studied using ab initio atomistic thermodynamics based on density-functional theory calculations. We demonstrate that in a range of stoichiometries, between those of the conventional three As-dimer and the new three Ga-As-dimer models, there exists a diversity of atomic structures featuring Ga-As heterodimers. These results fully explain the experimental scanning tunneling microscopy images and are likely to be relevant also to the c(4x4)-reconstructed (001) surfaces of other III-V semiconductors.

Competition and selectivity in the reaction of nitriles on ge(100)-2x1

We have experimentally investigated bonding of the nitrile functional group (R-Ctbd1;N:) on the Ge(100)-2x1 surface with multiple internal reflection infrared spectroscopy. Density functional theory calculations are used to help explain trends in the data. Several probe molecules, including acetonitrile, 2-propenenitrile, 3-butenenitrile, and 4-pentenenitrile, were studied to elucidate the factors controlling selectivity and competition on this surface. It is found that acetonitrile does not react on the Ge(100)-2x1 surface at room temperature, a result that can be understood with thermodynamic and kinetic arguments. A [4+2] cycloaddition product through the conjugated pi system and a [2+2] C=C cycloaddition product through the alkene are found to be the dominant surface adducts for the multifunctional molecule 2-propenenitrile. These two surface products are evidenced, respectively, by an extremely intense nu(C=C=N), or ketenimine stretch, at 1954 cm(-)(1) and the nu(Ctbd1;N) stretch near 2210 cm(-)(1). While the non-conjugated molecules 3-butenenitrile and 4-pentenenitrile are not expected to form a [4+2] cycloaddition product, both show vibrational modes near 1954 cm(-)(1). Additional investigation suggests that 3-butenenitrile can isomerize to 2-butenenitrile, a conjugated nitrile, before introduction into the vacuum chamber, explaining the presence of the vibrational modes near 1954 cm(-)(1). Pathways directly involving only the nitrile functional group are thermodynamically unfavorable at room temperature on Ge(100)-2x1, demonstrating that this functional group may prove useful as a vacuum-compatible protecting group.

The birth and evolution of surface science: child of the union of science and technology

This article is an account of the birth and evolution of surface science as an interdisciplinary research area. Surface science emanated from the confluence of concepts and tools in physics and chemistry with technological innovations that made it possible to determine the structure and properties of surfaces and interfaces and the dynamics of chemical reactions at surfaces. The combination in the 1960s and 1970s of ultra-high-vacuum (i.e., P < 10(-7) Pascal or 10(-9) Torr) technology with the recognition that electrons in the energy range from 50 to 500 eV exhibited inelastic collision mean free paths of the order of a few angstroms fostered an explosion of activity. The results were a reformulation of the theory of electron solid scattering, the nearly universal use of electron spectroscopies for surface characterization, the rise of surface science as an independent interdisciplinary research area, and the emergence of the American Vacuum Society (AVS) as a major international scientific society. The rise of microelectronics in the 1970s and 1980s resulted in huge increases in computational power. These increases enabled more complex experiments and the utilization of density functional theory for the quantitative prediction of surface structure and dynamics. Development of scanning-probe microscopies in the 1990s led to atomic-resolution images of macroscopic surfaces and interfaces as well as videos of atoms moving about on surfaces during growth and diffusion. Scanning probes have since brought solid-liquid interfaces into the realm of atomic-level surface science, expanding its scope to more complex systems, including fragile biological materials and processes.

GaAs(2 5 11): a new stable surface within the stereographic triangle

The atomic structure of GaAs(2 5 11), a hitherto unknown stable surface, has been determined by in situ scanning tunneling microscopy and first-principles electronic structure calculations. This orientation is located within the stereographic triangle, i.e., far away from all low-index surfaces. A low-energy ( 1x1) reconstruction containing arsenic dimers forms on the surface. The analysis of the surface structure shows that, for semiconductor surfaces, the gain in stability due to minimization of the number of dangling bonds is more important than the gain from rendering a semiconducting ground state.

Atomic Structure of the Stoichiometric GaAs(114) Surface

The stoichiometric GaAs(114) surface has been prepared using molecular beam epitaxy followed by annealing in ultrahigh vacuum. Based on in situ scanning tunneling microscopy measurements and first-principles electronic-structure calculations, we determine the surface reconstruction which we call alpha2(2x1). Contrary to what is expected for a high-index surface, it is surprisingly elementary. The (2x1) unit cell contains two As dimers and two rebonded Ga atoms. The surface energy is calculated as 53 meV/Å(2), which falls well within the range of low-index GaAs surface energies.

GaAs(001) surface under conditions of low As pressure: evidence for a novel surface geometry

Using density-functional theory we identify a new low-energy structure for GaAs(001) in an As-poor environment. The discovered geometry is qualitatively different from the usual surface-dimer based reconstructions of III-V semiconductor (001) surfaces. The stability of the new structure, which has a c(8x2) periodicity, is explained in terms of bond saturation and favorable electrostatic interactions between surface atoms. Simulated scanning tunneling microscopy images are in good agreement with experimental data, and a low-energy electron diffraction analysis supports the theoretical prediction.

CONTROLLEDMOLECULARADSORPTION ONSILICON: Laying a Foundation for Molecular Devices

This review is about understanding and controlling organic molecular adsorption on silicon. The goal is to provide a microscopic picture of structure and bonding in covalently attached molecule-silicon surface systems. The bias here is that an unprecedented, detailed understanding of adsorbate-surface structures is required in order to gain the control necessary to incorporate organic function into existing technologies or, eventually, to make new molecule-scale devices. A discussion of recent studies of adsorbate structure is presented. This includes simple alkenes, polyenes, benzene, and carene adsorbed on Si(100). Also included is a discussion of wet chemical procedures for forming alkyl and alkoxy covalently functionalized silicon. These discussions are presented together with comments on the related issues of adsorption dynamics and nano-scale manipulation in an effort to point the way toward principles and procedures that will allow the hybrid properties of organic molecules and surfaces to be harnessed.