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Validity of the kinematical approximation in transmission electron diffraction for surfaces, revisited. Ultramicroscopy 1991. [DOI: 10.1016/0304-3991(91)90168-6] [Citation(s) in RCA: 8] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
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Tong SY, Li H, Huang H. Energy extension in three-dimensional atomic imaging by electron emission holography. PHYSICAL REVIEW LETTERS 1991; 67:3102-3105. [PMID: 10044641 DOI: 10.1103/physrevlett.67.3102] [Citation(s) in RCA: 33] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/23/2023]
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Menon M, Allen RE. Dynamics of subsurface and surface chemisorption for B, C, and N on GaAs and InP. PHYSICAL REVIEW. B, CONDENSED MATTER 1991; 44:11293-11301. [PMID: 9999252 DOI: 10.1103/physrevb.44.11293] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Bozso F, Avouris P. Thermal and photochemical oxidation of Si(111): Doping effect and the reaction mechanism. PHYSICAL REVIEW. B, CONDENSED MATTER 1991; 44:9129-9132. [PMID: 9998891 DOI: 10.1103/physrevb.44.9129] [Citation(s) in RCA: 27] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Bensalah S, Lacharme J, Sébenne CA. Effect of vacuum annealings on the electronic properties of clean Si(111) surfaces. PHYSICAL REVIEW. B, CONDENSED MATTER 1991; 43:14441-14446. [PMID: 9997335 DOI: 10.1103/physrevb.43.14441] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Headrick RL, Levi AF, Luftman HS, Kovalchick J, Feldman LC. Electrical conduction in the Si(111):B-( sqrt 3 x sqrt 3 )R30 degrees/a-Si interface reconstruction. PHYSICAL REVIEW. B, CONDENSED MATTER 1991; 43:14711-14714. [PMID: 9997366 DOI: 10.1103/physrevb.43.14711] [Citation(s) in RCA: 9] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Bozso F, Avouris P. Adsorption of phosphorus on Si(111): Structure and chemical reactivity. PHYSICAL REVIEW. B, CONDENSED MATTER 1991; 43:1847-1850. [PMID: 9997448 DOI: 10.1103/physrevb.43.1847] [Citation(s) in RCA: 18] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Tong SY, Wei CM, Zhao TC, Huang H, Li H. Phase-shift correction in three-dimensional imaging using foward-scattering photoemission and Auger spectoscopies. PHYSICAL REVIEW LETTERS 1991; 66:60-63. [PMID: 10043142 DOI: 10.1103/physrevlett.66.60] [Citation(s) in RCA: 28] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/23/2023]
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Ma Y, Rowe JE, Chaban EE, Chen CT, Headrick RL, Meigs GM, Modesti S, Sette F. Surface states and alkali-to-semiconductor charge transfer in the K/Si(111)( sqrt 3 x sqrt 3 )R(30 degrees )-B system. PHYSICAL REVIEW LETTERS 1990; 65:2173-2176. [PMID: 10042472 DOI: 10.1103/physrevlett.65.2173] [Citation(s) in RCA: 10] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/23/2023]
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Headrick RL, Weir BE, Bevk J, Freer BS, Eaglesham DJ, Feldman LC. Influence of surface reconstruction on the orientation of homoepitaxial silicon films. PHYSICAL REVIEW LETTERS 1990; 65:1128-1131. [PMID: 10043112 DOI: 10.1103/physrevlett.65.1128] [Citation(s) in RCA: 8] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/23/2023]
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McLean AB, Terminello LJ, Himpsel FJ. Electronic structure of Si(111)-B( sqrt 3 x sqrt 3 )R30 degrees studied by Si 2p and B 1s core-level photoelectron spectroscopy. PHYSICAL REVIEW. B, CONDENSED MATTER 1990; 41:7694-7700. [PMID: 9993065 DOI: 10.1103/physrevb.41.7694] [Citation(s) in RCA: 13] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Bedrossian P, Mortensen K, Chen DM, Golovchenko JA. Adatom registry on Si(111)-( sqrt 3 x sqrt 3 )R30 degrees-B. PHYSICAL REVIEW. B, CONDENSED MATTER 1990; 41:7545-7548. [PMID: 9993046 DOI: 10.1103/physrevb.41.7545] [Citation(s) in RCA: 12] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Huang H, Tong SY, Quinn J, Jona F. Atomic structure of Si(111) ( sqrt 3-bar x sqrt 3-bar)R30 degrees-B by dynamical low-energy electron diffraction. PHYSICAL REVIEW. B, CONDENSED MATTER 1990; 41:3276-3279. [PMID: 9994116 DOI: 10.1103/physrevb.41.3276] [Citation(s) in RCA: 34] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Kaxiras E, Pandey KC, Himpsel FJ, Tromp RM. Electronic states due to surface doping: Si(111) sqrt 3 x sqrt 3B. PHYSICAL REVIEW. B, CONDENSED MATTER 1990; 41:1262-1265. [PMID: 9993836 DOI: 10.1103/physrevb.41.1262] [Citation(s) in RCA: 50] [Impact Index Per Article: 1.4] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Ogletree F, Salmeron M. Scanning tunneling microscopy and the atomic structure of solid surfaces. PROG SOLID STATE CH 1990. [DOI: 10.1016/0079-6786(90)90002-w] [Citation(s) in RCA: 19] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/27/2022]
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