Exciton Diffusion and Halo Effects in Monolayer Semiconductors

Imaging material functionality through three-dimensional nanoscale tracking of energy flow

The ability of energy carriers to move between atoms and molecules underlies biochemical and material function. Understanding and controlling energy flow, however, requires observing it on ultrasmall and ultrafast spatio-temporal scales, where energetic and structural roadblocks dictate the fate of energy carriers. Here, we developed a non-invasive optical scheme that leverages non-resonant interferometric scattering to track tiny changes in material polarizability created by energy carriers. We thus map evolving energy carrier distributions in four dimensions of spacetime with few-nanometre lateral precision and directly correlate them with material morphology. We visualize exciton, charge and heat transport in polyacene, silicon and perovskite semiconductors and elucidate how disorder affects energy flow in three dimensions. For example, we show that morphological boundaries in polycrystalline metal halide perovskites possess lateral- and depth-dependent resistivities, blocking lateral transport for surface but not bulk carriers. We also reveal strategies for interpreting energy transport in disordered environments that will direct the design of defect-tolerant materials for the semiconductor industry of tomorrow.

Valley-polarized exciton currents in a van der Waals heterostructure

Valleytronics is an appealing alternative to conventional charge-based electronics that aims at encoding data in the valley degree of freedom, that is, the information as to which extreme of the conduction or valence band carriers are occupying. The ability to create and control valley currents in solid-state devices could therefore enable new paradigms for information processing. Transition metal dichalcogenides (TMDCs) are a promising platform for valleytronics due to the presence of two inequivalent valleys with spin-valley locking1 and a direct bandgap2,3, which allows optical initialization and readout of the valley state4,5. Recent progress on the control of interlayer excitons in these materials6-8 could offer an effective way to realize optoelectronic devices based on the valley degree of freedom. Here, we show the generation and transport over mesoscopic distances of valley-polarized excitons in a device based on a type-II TMDC heterostructure. Engineering of the interlayer coupling results in enhanced diffusion of valley-polarized excitons, which can be controlled and switched electrically. Furthermore, using electrostatic traps, we can increase the exciton concentration by an order of magnitude, reaching densities in the order of 1012 cm-2, opening the route to achieving a coherent quantum state of valley-polarized excitons via Bose-Einstein condensation.

Spatially Resolved Photogenerated Exciton and Charge Transport in Emerging Semiconductors

We review recent advances in the characterization of electronic forms of energy transport in emerging semiconductors. The approaches described all temporally and spatially resolve the evolution of initially localized populations of photogenerated excitons or charge carriers. We first provide a comprehensive background for describing the physical origin and nature of electronic energy transport both microscopically and from the perspective of the observer. We introduce the new family of far-field, time-resolved optical microscopies developed to directly resolve not only the extent of this transport but also its potentially temporally and spatially dependent rate. We review a representation of examples from the recent literature, including investigation of energy flow in colloidal quantum dot solids, organic semiconductors, organic-inorganic metal halide perovskites, and 2D transition metal dichalcogenides. These examples illustrate how traditional parameters like diffusivity are applicable only within limited spatiotemporal ranges and how the techniques at the core of this review,especially when taken together, are revealing a more complete picture of the spatiotemporal evolution of energy transport in complex semiconductors, even as a function of their structural heterogeneities.

Electrical control of interlayer exciton dynamics in atomically thin heterostructures

A van der Waals heterostructure built from atomically thin semiconducting transition metal dichalcogenides (TMDs) enables the formation of excitons from electrons and holes in distinct layers, producing interlayer excitons with large binding energy and a long lifetime. By employing heterostructures of monolayer TMDs, we realize optical and electrical generation of long-lived neutral and charged interlayer excitons. We demonstrate that neutral interlayer excitons can propagate across the entire sample and that their propagation can be controlled by excitation power and gate electrodes. We also use devices with ohmic contacts to facilitate the drift motion of charged interlayer excitons. The electrical generation and control of excitons provide a route for achieving quantum manipulation of bosonic composite particles with complete electrical tunability.

Exciton Propagation and Halo Formation in Two-Dimensional Materials

The interplay of optics, dynamics, and transport is crucial for the design of novel optoelectronic devices, such as photodetectors and solar cells. In this context, transition-metal dichalcogenides (TMDs) have received much attention. Here, strongly bound excitons dominate optical excitation, carrier dynamics, and diffusion processes. While the first two have been intensively studied, there is a lack of fundamental understanding of nonequilibrium phenomena associated with exciton transport that is of central importance (e.g., for high-efficiency light harvesting). In this work, we provide microscopic insights into the interplay of exciton propagation and many-particle interactions in TMDs. On the basis of a fully quantum mechanical approach and in excellent agreement with photoluminescence measurements, we show that Auger recombination and emission of hot phonons act as a heating mechanism giving rise to strong spatial gradients in excitonic temperature. The resulting thermal drift leads to an unconventional exciton diffusion characterized by spatial exciton halos.

Probing and Manipulating Carrier Interlayer Diffusion in van der Waals Multilayer by Constructing Type-I Heterostructure

van der Waals multilayer heterostructures have drawn increasing attention due to the potential for achieving high-performance photonic and optoelectronic devices. However, the carrier interlayer transportation behavior in multilayer structures, which is essential for determining the device performance, remains unrevealed. Here, we report a general strategy for studying and manipulating the carrier interlayer transportation in van der Waals multilayers by constructing type-I heterostructures, with a desired narrower bandgap monolayer acting as a carrier extraction layer. For heterostructures comprised of multilayer PbI₂ and monolayer WS₂, we find similar interlayer diffusion coefficients of ∼0.039 and ∼0.032 cm² s^-1 for electrons and holes in the PbI₂ multilayer by fitting the time-resolved carrier dynamics based on the diffusion model. Because of the balanced carrier interlayer diffusion and the injection process at the heterointerface, the photoluminescence emission of the bottom WS₂ monolayer is greatly enhanced by up to 106-fold at an optimized PbI₂ thickness of the heterostructure. Our results provide valuable information on carrier interlayer transportation in van der Waals multilayer structures and pave the way for utilizing carrier behaviors to improve device performances.

Dielectric disorder in two-dimensional materials

Understanding and controlling disorder is key to nanotechnology and materials science. Traditionally, disorder is attributed to local fluctuations of inherent material properties such as chemical and structural composition, doping or strain. Here, we present a fundamentally new source of disorder in nanoscale systems that is based entirely on the local changes of the Coulomb interaction due to fluctuations of the external dielectric environment. Using two-dimensional semiconductors as prototypes, we experimentally monitor dielectric disorder by probing the statistics and correlations of the exciton resonances, and theoretically analyse the influence of external screening and phonon scattering. Even moderate fluctuations of the dielectric environment are shown to induce large variations of the bandgap and exciton binding energies up to the 100 meV range, often making it a dominant source of inhomogeneities. As a consequence, dielectric disorder has strong implications for both the optical and transport properties of nanoscale materials and their heterostructures.

Optical valley Hall effect for highly valley-coherent exciton-polaritons in an atomically thin semiconductor

Spin-orbit coupling is a fundamental mechanism that connects the spin of a charge carrier with its momentum. In the optical domain, an analogous synthetic spin-orbit coupling is accessible by engineering optical anisotropies in photonic materials. Both yield the possibility of creating devices that directly harness spin and polarization as information carriers. Atomically thin transition metal dichalcogenides promise intrinsic spin-valley Hall features for free carriers, excitons and photons. Here we demonstrate spin- and valley-selective propagation of exciton-polaritons in a monolayer of MoSe₂ that is strongly coupled to a microcavity photon mode. In a wire-like device we trace the flow and helicity of exciton-polaritons expanding along its channel. By exciting a coherent superposition of K and K' tagged polaritons, we observe valley-selective expansion of the polariton cloud without either an external magnetic field or coherent Rayleigh scattering. The observed optical valley Hall effect occurs on a macroscopic scale, offering the potential for applications in spin-valley-locked photonic devices.

Effective detection of spatio-temporal carrier dynamics by carrier capture

The spatio-temporal dynamics of electrons moving in a 2D plane is challenging to detect when the required resolution shrinks simultaneously to nanometer length and subpicosecond time scale. We propose a detection scheme relying on phonon-induced carrier capture from 2D unbound states into the bound states of an embedded quantum dot. This capture process happens locally and here we explore if this locality is sufficient to use the carrier capture process as detection of the ultrafast diffraction of electrons from an obstacle in the 2D plane. As an example we consider an electronic wave packet traveling in a semiconducting monolayer of the transition metal dichalcogenide MoSe₂, and we study the scattering-induced dynamics using a single particle Lindblad approach. Our results offer a new way to high resolution detection of the spatio-temporal carrier dynamics.

Scanning Tunneling Microscope-Induced Excitonic Luminescence of a Two-Dimensional Semiconductor

The long sought-after goal of locally and spectroscopically probing the excitons of two-dimensional (2D) semiconductors is attained using a scanning tunneling microscope (STM). Excitonic luminescence from monolayer molybdenum diselenide (MoSe_{2}) on a transparent conducting substrate is electrically excited in the tunnel junction of an STM under ambient conditions. By comparing the results with photoluminescence measurements, the emission mechanism is identified as the radiative recombination of bright A excitons. STM-induced luminescence is observed at bias voltages as low as those that correspond to the energy of the optical band gap of MoSe_{2}. The proposed excitation mechanism is resonance energy transfer from the tunneling current to the excitons in the semiconductor, i.e., through virtual photon coupling. Additional mechanisms (e.g., charge injection) may come into play at bias voltages that are higher than the electronic band gap. Photon emission quantum efficiencies of up to 10^{-7} photons per electron are obtained, despite the lack of any participating plasmons. Our results demonstrate a new technique for investigating the excitonic and optoelectronic properties of 2D semiconductors and their heterostructures at the nanometer scale.

Spatio-temporal dynamics in graphene

Temporally and spectrally resolved dynamics of optically excited carriers in graphene has been intensively studied theoretically and experimentally, whereas carrier diffusion in space has attracted much less attention. Understanding the spatio-temporal carrier dynamics is of key importance for optoelectronic applications, where carrier transport phenomena play an important role. In this work, we provide a microscopic access to the time-, momentum-, and space-resolved dynamics of carriers in graphene. We determine the diffusion coefficient to be D≈ 360 cm² s^-1 and reveal the impact of carrier-phonon and carrier-carrier scattering on the diffusion process. In particular, we show that phonon-induced scattering across the Dirac cone gives rise to back-diffusion counteracting the spatial broadening of the carrier distribution.

Upconverted electroluminescence via Auger scattering of interlayer excitons in van der Waals heterostructures

The intriguing physics of carrier-carrier interactions, which likewise affect the operation of light emitting devices, stimulate the research on semiconductor structures at high densities of excited carriers, a limit reachable at large pumping rates or in systems with long-lived electron-hole pairs. By electrically injecting carriers into WSe₂/MoS₂ type-II heterostructures which are indirect in real and k-space, we establish a large population of typical optically silent interlayer excitons. Here, we reveal their emission spectra and show that the emission energy is tunable by an applied electric field. When the population is further increased by suppressing the radiative recombination rate with the introduction of an hBN spacer between WSe₂ and MoS₂, Auger-type and exciton-exciton annihilation processes become important. These processes are traced by the observation of an up-converted emission demonstrating that excitons gaining energy in non-radiative Auger processes can be recovered and recombine radiatively.

Electrical suppression of all nonradiative recombination pathways in monolayer semiconductors

Defects in conventional semiconductors substantially lower the photoluminescence (PL) quantum yield (QY), a key metric of optoelectronic performance that directly dictates the maximum device efficiency. Two-dimensional transition-metal dichalcogenides (TMDCs), such as monolayer MoS2, often exhibit low PL QY for as-processed samples, which has typically been attributed to a large native defect density. We show that the PL QY of as-processed MoS2 and WS2 monolayers reaches near-unity when they are made intrinsic through electrostatic doping, without any chemical passivation. Surprisingly, neutral exciton recombination is entirely radiative even in the presence of a high native defect density. This finding enables TMDC monolayers for optoelectronic device applications as the stringent requirement of low defect density is eased.

Quantitative optical assessment of photonic and electronic properties in halide perovskite

The development of high efficiency solar cells relies on the management of electronic and optical properties that need to be accurately measured. As the conversion efficiencies increase, there is a concomitant electronic and photonic contribution that affects the overall performances. Here we show an optical method to quantify several transport properties of semiconducting materials and the use of multidimensional imaging techniques allows decoupling and quantifying the electronic and photonic contributions. Example of application is shown on halide perovskite thin film for which a large range of transport properties is given in the literature. We therefore optically measure pure carrier diffusion properties and evidence the contribution of optical effects such as the photon recycling as well as the photon propagation where emitted light is laterally transported without being reabsorbed. This latter effect has to be considered to avoid overestimated transport properties such as carrier mobility, diffusion length or diffusion coefficient.

Bose Condensation of Long-Living Direct Excitons in an Off-Resonant Cavity

We propose a way to increase the lifetime of two-dimensional direct excitons and show the possibility to observe their macroscopically coherent state at temperatures much higher than that of indirect exciton condensation. For a single GaAs quantum well embedded in photonic layered heterostructures with subwavelength period, we predict the exciton radiative decay to be strongly suppressed. Quantum hydrodynamics joined with the Bogoliubov approach are used to study the Berezinskii-Kosterlitz-Thouless crossover in a finite exciton system with intermediate densities. Below the estimated critical temperatures, drastic growth of the correlation length is shown to be accompanied by a manyfold increase of the photoluminescence intensity.