Synthesis and characterization of fluorinated benzoxazole polymers with highTg and low dielectric constant

Low-Temperature Solution-Processed Soluble Polyimide Gate Dielectrics: From Molecular-Level Design to Electrically Stable and Flexible Organic Transistors

Aromatic soluble polyimides (PIs) have been widely used in organic field-effect transistors (OFETs) as gate dielectric layers due to their promising features such as outstanding chemical resistance, thermal stability, low-temperature processability, and mechanical flexibility. However, the molecular structures of soluble PIs on the electrical characteristics of OFETs are not yet fully understood. In this work, the material, dielectric, and electrical properties are evaluated to systematically investigate the chemical structure effect of aromatic dianhydride and diamine monomers on the device performance. Four soluble PIs based on 4,4'-(Hexafluoroisopropylidene)diphthalic anhydride (6FDA) and 5-(2,5-Dioxotetrahydrofuryl)-3-methyl-3-cyclohexene-1,2-dicarboxylic anhydride, in which the monomeric precursors contain different backbones, side groups, and linkages, were employed to compare the chemical structure impact. The dielectric properties, which significantly affect the charge transport and crystallinity of OSC thin films, clearly depended on the soluble PI types as well as the surface energy and the thermal stability. Furthermore, the electrical characteristic measurement and parameter extraction of OFETs based on TIPS-pentacene revealed that the 6FDA-based soluble PIs, which lead to high field-effect mobility, near-zero threshold electric field, and outstanding electrical stability under bias stress, are the most promising gate dielectric candidates. Finally, low-temperature solution-processed OFETs are successfully integrated with ultrathin flexible substrates, and they exhibit no significant electrical performance loss after mechanical flexibility tests. This work presents a step forward in the development of soluble PI gate dielectrics for flexible electronic devices with high device performance.

Flame–retarded epoxy resin with high glass transition temperature cured by DOPO-containing H-benzimidazole

A halogen-free flame retardant of 9,10-dihydro-9-oxa-10-phosphaphenanthrene-10-oxide-containing H-benzimidazole (DHBI) was synthesized and subsequently used as co-curing agent of 4,4′-diamino-diphenylmethane for diglycidyl ether of bisphenol-A. The structure of DHBI was characterized by Fourier transform infrared (FTIR) spectroscopy, proton, carbon 13 and phosphorus-31 nuclear magnetic resonance, and mass spectroscopy. A series of cured epoxy resins (EPs) were prepared and their flame retardancy, thermal stability, flexibility, and dielectric properties were investigated. The resulting cured EP (EP-10) with 7.45 wt% of DHBI successfully achieved UL 94 V-0 rate with limited oxygen index of 35.6% and without dropping phenomenon. Compared with the cured pristine EP (EP-00), the glass transition temperature of EP-10 was increased by 6.9°C, accompanied with an enhancement of flexible strength by 13.1 MPa and a decrement of dielectric constant by 0.3 at the testing frequency of 1 MHz.

A new polymer with low dielectric constant based on trifluoromethyl-substituted arene: preparation and properties

A polymer based on trifluoromethyl-substituted arene was synthesized with high molecular weight (M_n) of 62 000 by the Scholl reaction. The polymer film showed low dielectric constants of about 2.56 in a range of frequencies from 1 to 25 MHz. Moreover, the polymer revealed high thermostability and good mechanical properties, suggesting that the polymer had potential applications in the electronics industry.

Electrostatic nanolithography in polymers using atomic force microscopy

The past decade has witnessed an explosion of techniques used to pattern polymers on the nano (1-100 nm) and submicrometre (100-1,000 nm) scale, driven by the extensive versatility of polymers for diverse applications, such as molecular electronics, data storage, optoelectronics, displays, sacrificial templates and all forms of sensors. Conceptually, most of the patterning techniques, including microcontact printing (soft lithography), photolithography, electron-beam lithography, block-copolymer templating and dip-pen lithography, are based on the spatially selective removal or formation/deposition of polymer. Here, we demonstrate an alternative and novel lithography technique--electrostatic nanolithography using atomic force microscopy--that generates features by mass transport of polymer within an initially uniform, planar film without chemical crosslinking, substantial polymer degradation or ablation. The combination of localized softening of attolitres (10(2)-10(5) nm3) of polymer by Joule heating, extremely non-uniform electric field gradients to polarize and manipulate the soften polymer, and single-step process methodology using conventional atomic force microscopy (AFM) equipment, establishes a new paradigm for polymer nanolithography, allowing rapid (of the order of milliseconds) creation of raised (or depressed) features without external heating of a polymer film or AFM tip-film contact.