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Hernández-Gutiérrez CA, Casallas-Moreno YL, Rangel-Kuoppa VT, Cardona D, Hu Y, Kudriatsev Y, Zambrano-Serrano MA, Gallardo-Hernandez S, Lopez-Lopez M. Study of the heavily p-type doping of cubic GaN with Mg. Sci Rep 2020; 10:16858. [PMID: 33033291 PMCID: PMC7544912 DOI: 10.1038/s41598-020-73872-w] [Citation(s) in RCA: 12] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/25/2020] [Accepted: 09/23/2020] [Indexed: 11/09/2022] Open
Abstract
We have studied the Mg doping of cubic GaN grown by plasma-assisted Molecular Beam Epitaxy (PA-MBE) over GaAs (001) substrates. In particular, we concentrated on conditions to obtain heavy p-type doping to achieve low resistance films which can be used in bipolar devices. We simulated the Mg-doped GaN transport properties by density functional theory (DFT) to compare with the experimental data. Mg-doped GaN cubic epitaxial layers grown under optimized conditions show a free hole carrier concentration with a maximum value of 6 × 1019 cm-3 and mobility of 3 cm2/Vs. Deep level transient spectroscopy shows the presence of a trap with an activation energy of 114 meV presumably associated with nitrogen vacancies, which could be the cause for the observed self-compensation behavior in heavily Mg-doped GaN involving Mg-VN complexes. Furthermore, valence band analysis by X-ray photoelectron spectroscopy and photoluminescence spectroscopy revealed an Mg ionization energy of about 100 meV, which agrees quite well with the value of 99.6 meV obtained by DFT. Our results show that the cubic phase is a suitable alternative to generate a high free hole carrier concentration for GaN.
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Affiliation(s)
- C A Hernández-Gutiérrez
- Tecnológico Nacional de México/Instituto Tecnológico de Tuxtla Gutiérrez, Posgrado en Ingeniería Grupo de Opto-mecatrónica, Carretera Panamericana km 1080, 29050, Tuxtla Gutiérrez, Mexico.
| | - Y L Casallas-Moreno
- CONACYT, Instituto Politécnico Nacional - UPIITA, Av. IPN 2580 Col. Barrio La Laguna Ticomán, Ciudad de México, 07340, Mexico
| | - Victor-Tapio Rangel-Kuoppa
- Centro de Investigación en Dispositivos Semiconductores, Instituto de Ciencias, Universidad Autónoma de Puebla, Puebla, 72000, Mexico
| | - Dagoberto Cardona
- Facultad de Ciencias Físico-Matemáticas, UMSNH, Edificio L, Francisco J. Mujica S/N, Morelia, Michoacán, 58000, Mexico
| | - Yaoqiao Hu
- Department of Materials Science and Engineering, The University of Texas At Dallas, Richardson, TX, 75080, USA
| | - Yuri Kudriatsev
- Departamento de Ingeniería Eléctrica SEES, Cinvestav-IPN, Ciudad de México, 07360, Mexico
| | - M A Zambrano-Serrano
- Programa de Doctorado en Nanociencias Y Nanotecnología, Cinvestav-IPN, Ciudad de México, 07360, Mexico
| | | | - M Lopez-Lopez
- Departamento de Física, Cinvestav-IPN, Ciudad de México, 07360, Mexico.
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Taniyasu Y, Suzuki K, Lim D, Jia A, Shimotomai M, Kato Y, Kobayashi M, Yoshikawa A, Takahashi K. Cubic InGaN/GaN Double-Heterostructure Light Emitting Diodes Grown on GaAs (001) Substrates by MOVPE. ACTA ACUST UNITED AC 2000. [DOI: 10.1002/1521-396x(200007)180:1<241::aid-pssa241>3.0.co;2-a] [Citation(s) in RCA: 23] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/10/2022]
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