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For: Paszkiewicz R, Paszkiewicz B, Korbutowicz R, Kozlowski J, Tlaczala M, Bryja L, Kudrawiec R, Misiewicz J. MOVPE GaN Grown on Alternative Substrates. Cryst Res Technol 2001. [DOI: 10.1002/1521-4079(200110)36:8/10<971::aid-crat971>3.0.co;2-b] [Citation(s) in RCA: 12] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [What about the content of this article? (0)] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/10/2022]
Number Cited by Other Article(s)
1
Lei Y, Xu J, Zhu K, He M, Zhou J, Gao Y, Zhang L, Chen Y. A GaN-Based LED With Perpendicular Structure Fabricated on a ZnO Substrate by MOCVD. ACTA ACUST UNITED AC 2013. [DOI: 10.1109/jdt.2012.2236300] [Citation(s) in RCA: 14] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/07/2022]
2
Wierzchowski W, Wieteska K, Graeff W, Sakowska H, ?ukasiewicz T, Paw?owska M. Synchrotron X-ray investigation of La0.3Sr0.7Al0.65Ta0.35O3 crystals. CRYSTAL RESEARCH AND TECHNOLOGY 2005. [DOI: 10.1002/crat.200410377] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/08/2022]
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