Spin-cast and patterned organophosphonate self-assembled monolayer dielectrics on metal-oxide-activated Si

Self-Assembled Monolayers for Interfacial Engineering in Solution-Processed Thin-Film Electronic Devices: Design, Fabrication, and Applications

Interfacial engineering has long been a vital means of improving thin-film device performance, especially for organic electronics, perovskites, and hybrid devices. It greatly facilitates the fabrication and performance of solution-processed thin-film devices, including organic field effect transistors (OFETs), organic solar cells (OSCs), perovskite solar cells (PVSCs), and organic light-emitting diodes (OLEDs). However, due to the limitation of traditional interfacial materials, further progress of these thin-film devices is hampered particularly in terms of stability, flexibility, and sensitivity. The deadlock has gradually been broken through the development of self-assembled monolayers (SAMs), which possess distinct benefits in transparency, diversity, stability, sensitivity, selectivity, and surface passivation ability. In this review, we first showed the evolution of SAMs, elucidating their working mechanisms and structure-property relationships by assessing a wide range of SAM materials reported to date. A comprehensive comparison of various SAM growth, fabrication, and characterization methods was presented to help readers interested in applying SAM to their works. Moreover, the recent progress of the SAM design and applications in mainstream thin-film electronic devices, including OFETs, OSCs, PVSCs and OLEDs, was summarized. Finally, an outlook and prospects section summarizes the major challenges for the further development of SAMs used in thin-film devices.

Rational molecular design of multifunctional self-assembled monolayers for efficient hole selection and buried interface passivation in inverted perovskite solar cells

Self-assembled monolayers (SAMs) have been widely employed as the bottom-contact hole-selective layer (HSL) in inverted perovskite solar cells (PSCs). Besides manipulating the electrical properties, molecularly engineering the SAM provides an opportunity to modulate the perovskite buried interface. Here, we successfully introduced Lewis-basic oxygen and sulfur heteroatoms through rational molecular design of asymmetric SAMs to obtain two novel multifunctional SAMs, CbzBF and CbzBT. Detailed characterization of single-crystal structures and device interfaces shows that enhanced packing, more effective ITO work function adjustment, and buried interface passivation were successfully achieved. Consequently, the champion PSC employing CbzBT showed an excellent power conversion efficiency (PCE) of 24.0% with a high fill factor of 84.41% and improved stability. This work demonstrates the feasibility of introducing defect-passivating heterocyclic groups into SAM molecules to help passivate the interfacial defects in PSCs. The insights gained from this molecular design strategy will accelerate the development of new multifunctional SAM HSLs for efficient PSCs.

Efficient Perovskite Light-Emitting Diodes by Buried Interface Modification with Triphenylphosphine Oxide

Metal halide perovskite films are prepared mainly by solution-based methods. However, the preparation process is prone to produce massive defects at the interface between the perovskite emitting layer and the charge transport layers, limiting the perovskite light-emitting diode device performance. Aiming at this problem, researchers have proposed many effective strategies to passivate these interface defects. However, most previous research studies only focus on modifying the perovskite top interface, and very few reports deal with the buried interface. Here, we deposited triphenylphosphine oxide (TPPO) molecules between the perovskite and the hole transport layer (HTL) and realized the buried interface modification. Adding TPPO avoids the contact recombination of the perovskite and HTL and improves the film quality by increasing the substrate wettability. Moreover, the lone pair electrons of P═O can interact with the uncoordinated lead (Pb²⁺) of the perovskite and passivate halogen vacancy defects, and the insulation property of TPPO helps to balance the injection of holes and electrons. As a result, a maximum external quantum efficiency (EQE_max) of 21.01% was obtained with an average of 18.4 ± 0.9% over 30 devices, and the device reproducibility was greatly enhanced.

π-Expanded Carbazoles as Hole-Selective Self-Assembled Monolayers for High-Performance Perovskite Solar Cells

Carbazole-derived self-assembled monolayers (SAMs) are promising hole-selective materials for inverted perovskite solar cells (PSCs). However, they often possess small dipoles which prohibit them from effectively modulating the workfunction of ITO substrate, limiting the PSC photovoltage. Moreover, their properties can be drastically affected by even subtle structural modifications, undermining the final PSC performance. Here, we designed two carbazole-derived SAMs, CbzPh and CbzNaph through asymmetric or helical π-expansion for improved molecular dipole moment and strengthened π-π interaction. The helical π-expanded CbzNaph has the largest dipole, forming densely packed and ordered monolayer, facilitated by the highly ordered assembly observed in its π-scaffold's single crystal. These synergistically modulate the perovskite crystallization atop and tune the ITO workfunction. Consequently, the champion PSC employing CbzNaph showed an excellent 24.1 % efficiency and improved stability.

Hydrophobic AlOx Surfaces by Adsorption of a SAM on Large Areas for Application in Solar Cell Metallization Patterning

A resist-free metallization of copper-plated contacts is attractive to replace screen-printed silver contacts and is demonstrated on large-area silicon heterojunction (SHJ) solar cells. In our approach, a self-passivated Al layer is used as a mask during the plating process. In this study, Al/AlO_x or Al₂O₃ plating masks are further functionalized by a self-assembled monolayer (SAM) of octadecyl phosphonic acid (ODPA). The ODPA adsorption is characterized by X-ray photoelectron spectroscopy (XPS), Fourier transform infrared spectroscopy in attenuated total reflectance (FTIR-ATR) (in situ), and contact angle measurements to link the surface chemical composition to wetting properties. The SAM leads to homogeneous hydrophobic surfaces on large-area textured solar cells and planar flexible printed circuit boards (PCBs), which allows reproducible patterning of narrow lines by inkjet printing of an etchant. Selective copper plating is then performed to complete the metallization process and produce Cu contacts in the patterned areas. Silicon heterojunction (SHJ) solar cells metallized by the complete sequence reached up to 22.4% efficiency on a large area.

Interface Engineering in Organic Field-Effect Transistors: Principles, Applications, and Perspectives

Heterogeneous interfaces that are ubiquitous in optoelectronic devices play a key role in the device performance and have led to the prosperity of today's microelectronics. Interface engineering provides an effective and promising approach to enhancing the device performance of organic field-effect transistors (OFETs) and even developing new functions. In fact, researchers from different disciplines have devoted considerable attention to this concept, which has started to evolve from simple improvement of the device performance to sophisticated construction of novel functionalities, indicating great potential for further applications in broad areas ranging from integrated circuits and energy conversion to catalysis and chemical/biological sensors. In this review article, we provide a timely and comprehensive overview of current efficient approaches developed for building various delicate functional interfaces in OFETs, including interfaces within the semiconductor layers, semiconductor/electrode interfaces, semiconductor/dielectric interfaces, and semiconductor/environment interfaces. We also highlight the major contributions and new concepts of integrating molecular functionalities into electrical circuits, which have been neglected in most previous reviews. This review will provide a fundamental understanding of the interplay between the molecular structure, assembly, and emergent functions at the molecular level and consequently offer novel insights into designing a new generation of multifunctional integrated circuits and sensors toward practical applications.

Resonant Plasmon-Enhanced Upconversion in Monolayers of Core-Shell Nanocrystals: Role of Shell Thickness

The upconversion luminescence (UCL) of colloidal lanthanide-doped upconversion nanocrystals (UCNCs) can be improved either by precise encapsulation of the surface by optically inert shells around the core, by an alteration of the nearby environment via metal nanoparticles, or by a combination of both. Considering their potential importance in crystalline silicon photovoltaics, the present study investigates both effects for two-dimensional arrangements of UCNCs. Using excitation light of 1500 nm wavelength, we study the variation in the upconversion luminescence from an Er³⁺-doped NaYF₄ core as a function of the thickness of a NaLuF₄ shell in colloidal solutions as well as in spin-cast-assisted self-assembled monolayers of UCNCs. The observed UCL yields and decay times of Er³⁺ ions of the UCNCs increase with increasing shell thickness in both cases, and nearly no variation in decay times is observed in the transition of the UCNCs from solution to film configurations. The luminescence efficiency of the UCNC monolayers is further enhanced by electron-beam-lithographic-designed Au nanodiscs deposited either on top of or buried within the monolayer. It is observed that the improvement by the nanocrystal shells is greater than that of the Au nanodiscs.

Functional Organophosphonate Interfaces for Nanotechnology: A Review

Optimization of interfaces in inorganic-organic device systems depends strongly on understanding both the molecular processes that are involved in surface modification and the effects that such modifications have on the electronic states of the material. In particular, the last several years have seen passivation and functionalization of semiconductor surfaces to be strategies by which to realize devices with superior function by controlling Fermi level energies, band-gap magnitudes, and work functions of semiconducting substrates. Among all of the synthetic routes and deposition methods available for the optimization of functional interfaces in hybrid systems, organophosphonate chemistry has been found to be a powerful tool to control at the molecular level the properties of materials in many different applications. In this Review, we focus on the relevance of organophosphonate chemistry in nanotechnology, giving an overview about some recent advances in surface modification, interface engineering, nanostructure optimization, and biointegration.

Self-Assembled Monolayers as Patterning Tool for Organic Electronic Devices

The patterning of functional materials represents a crucial step for the implementation of organic semiconducting materials into functional devices. Classical patterning techniques such as photolithography or shadow masking exhibit certain limitations in terms of choice of materials, processing techniques and feasibility for large area fabrication. The use of self-assembled monolayers (SAMs) as a patterning tool offers a wide variety of opportunities, from the region-selective deposition of active components to guiding the crystallization direction. Here, we discuss general techniques and mechanisms for SAM-based patterning and show that all necessary components for organic electronic devices, i.e., conducting materials, dielectrics, organic semiconductors, and further functional layers can be patterned with the use of self-assembled monolayers. The advantages and limitations, and potential further applications of patterning approaches based on self-assembled monolayers are critically discussed.

Spatially Uniform Thin-Film Formation of Polymeric Organic Semiconductors on Lyophobic Gate Insulator Surfaces by Self-Assisted Flow-Coating

Surface hydrophobization by self-assembled monolayer formation is a powerful technique for improving the performance of organic field-effect transistors (OFETs). However, organic thin-film formation on such a surface by solution processing often fails due to the repellent property of the surface against common organic solvents. Here, a scalable unidirectional coating technique that can solve this problem, named self-assisted flow-coating, is reported. Producing a specially designed lyophobic-lyophilic pattern on the lyophobic surface enables organic thin-film formation in the lyophobic surface areas by flow-coating. To demonstrate the usefulness of this technique, OFET arrays with an active layer of poly(2,5-bis(3-hexadecylthiophene-2-yl)thieno[3,2-b]thiophene) are fabricated. The ideal transfer curves without hysteresis behavior are obtained for all OFETs. The average field-effect hole mobility in the saturation regime is 0.273 and 0.221 cm²·V^-1·s^-1 for the OFETs with the channels parallel and perpendicular to the flow-coating direction, respectively, and the device-to-device variation is less than 3% for each OFET set. Very small device-to-device variation is also obtained for the on-state current, threshold voltage, and subthreshold swing. These results indicate that the self-assisted flow-coating is a promising coating technique to form spatially uniform thin films of polymeric organic semiconductors on lyophobic gate insulator surfaces.

Flexible and low-voltage organic phototransistors

A stripping procedure was demonstrated to prepare ultra-smooth gate dielectric for flexible and low-voltage organic phototransistors.

Unencapsulated Air-stable Organic Field Effect Transistor by All Solution Processes for Low Power Vapor Sensing

With its excellent mechanical flexibility, low-cost and low-temperature processing, the solution processed organic field-effect transistor (OFET) is a promising platform technology for developing ubiquitous sensor applications in digital health, environment monitoring and Internet of Things. However, a contradiction between achieving low voltage operation and having stable performance severely hinder the technology to become commercially viable. This work shows that, by reducing the sub-gap density of states (DOS) at the channel for low operation voltage and using a proper low-k non-polar polymer dielectric layer, such an issue can be addressed. Stable electrical properties after either being placed for weeks or continuously prolonged bias stressing for hours in ambient air are achieved for all solution processed unencapsulated OFETs with the channel being exposed to the ambient air for analyte detection. The fabricated device presents a steep subthreshold swing less than 100 mV/decade, and an ON/OFF ratio of 10⁶ at a voltage swing of 3 V. The low voltage and stable operation allows the sensor made of the OFET to be incorporated into a battery-powered electronic system for continuously reliable sensing of ammonia vapor in ambient air with very small power consumption of about 50 nW.

Preparation and characterization of superhydrophobic composite coatings on a magnesium–lithium alloy

We report a superhydrophobic organophosphonate composite coating on a magnesium–lithium alloy surface, which exhibits excellent water-repellent and corrosion resistance properties.

Direct patterning of sol–gel metal oxide semiconductor and dielectric films via selective surface wetting

Simple, photolithography-free, direct patterning of solution-processed metal oxide materials was developed for fabricating all-solution low-voltage metal oxide thin-film transistor arrays.

High-throughput analysis of molecular orientation on surfaces by NEXAFS imaging of curved sample arrays

Near-edge X-ray absorption fine structure (NEXAFS) spectroscopy provides detailed information about the orientation and alignment of thin films. NEXAFS is a synchrotron-based technique-the availability of beam-time per user is typically limited to no more than a few weeks per year. The limited availability is currently a true barrier for using NEXAFS in combinatorial studies of molecular alignment. We have recently demonstrated how large area full field NEXAFS imaging allows users to pursue combinatorial studies of surface chemistry. Now we report an extension of this approach which allows the acquisition of orientation information from a single NEXAFS image. An array with 80 elements (samples), containing eight series of different surface modifications, was mounted on a curved substrate allowing the collection of NEXAFS spectra with a range of orientations with respect to the X-ray beam. Images collected from this array show how hyperspectral NEXAFS data collected from curved surfaces can be used for high-throughput molecular orientation analysis.

Recent advances in organic transistor printing processes

Recent progress in organic field-effect transistor (OFET) printing processes is reviewed, and a perspective on the future of the field is discussed. The principles underlying the OFET printing techniques are introduced according to two categories: direct write printing and transfer printing. A comprehensive overview of the use of printing techniques in OFET production processes is also provided. Considerations for improving OFET device performance using printing processes are explored. Prior to OFET commercialization, the OFET printing techniques must satisfy several requirements, as discussed here.

Multifunctional phosphonic acid self-assembled monolayers on metal oxides as dielectrics, interface modification layers and semiconductors for low-voltage high-performance organic field-effect transistors

Insulating and semiconducting molecular phosphonic acid (PA) self-assembled monolayers (SAMs) have been developed for applications in organic field-effect transistors (OFETs) for low-power, low-cost flexible electronics. Multifunctional SAMs on ultrathin metal oxides, such as hafnium oxide and aluminum oxide, are shown to enable (1) low-voltage (sub 2 V) OFETs through dielectric and interface engineering on rigid and plastic substrates, (2) simultaneous one-component modification of source-drain and dielectric surfaces in bottom-contact OFETs, and (3) SAM-FETs based on molecular monolayer semiconductors. The combination of excellent dielectric and interfacial properties results in high-performance OFETs with low-subthreshold slopes down to 75 mV dec(-1), high I(on)/I(off) ratios of 10(5)-10(7), contact resistance down to 700 Ω cm, charge carrier mobilities of 0.1-4.6 cm(2) V(-1) s(-1), and general applicability to solution-processed and vacuum-deposited n-type and p-type organic and polymer semiconductors.

Effects of self-assembled monolayer structural order, surface homogeneity and surface energy on pentacene morphology and thin film transistor device performance

A systematic study of six phosphonic acid (PA) self-assembled monolayers (SAMs) with tailored molecular structures is performed to evaluate their effectiveness as dielectric modifying layers in organic field-effect transistors (OFETs) and determine the relationship between SAM structural order, surface homogeneity, and surface energy in dictating device performance. SAM structures and surface properties are examined by near edge X-ray absorption fine structure (NEXAFS) spectroscopy, contact angle goniometry, and atomic force microscopy (AFM). Top-contact pentacene OFET devices are fabricated on SAM modified Si with a thermally grown oxide layer as a dielectric. For less ordered methyl- and phenyl-terminated alkyl ~(CH₂)₁₂ PA SAMs of varying surface energies, pentacene OFETs show high charge carrier mobilities up to 4.1 cm² V^-1 s^-1. It is hypothesized that for these SAMs, mitigation of molecular scale roughness and subsequent control of surface homogeneity allow for large pentacene grain growth leading to high performance pentacene OFET devices. PA SAMs that contain bulky terminal groups or are highly crystalline in nature do not allow for a homogenous surface at a molecular level and result in charge carrier mobilities of 1.3 cm² V^-1 s^-1 or less. For all molecules used in this study, no causal relationship between SAM surface energy and charge carrier mobility in pentacene FET devices is observed.

Controlled, low-coverage metal oxide activation of silicon for organic functionalization: unraveling the phosphonate bond

Deposition of thin films and grafting of organic molecules on semiconductor surfaces, particularly oxide surfaces, are widely studied as means of passivation and functionalization for a variety of applications. However, organic functionalization of silicon oxide is challenging, as the currently used molecules (silanes and phosphonates) do not form layers that are stable in aqueous environments and present challenges during the grafting process. For instance, the chemical grafting of phosphonates requires high temperature (140 °C) to perform. Modification of SiO(2) surfaces with metal oxides is an attractive alternative since strong bonds can be established between metal oxides and relevant molecules (silanes, phosphonates). While such modification is possible using vapor-phase methods, such as atomic layer deposition and physical vapor-phase deposition, wet chemical processing is inexpensive and technologically very attractive. We describe here a simple wet chemical method to deposit an ultrathin layer of metal oxide/hydroxide groups. Further, using a model surface with exactly one-third monolayer OH groups on oxide-free Si surfaces, the precise adsorption geometry on single Al(OH)(3) groups is shown to be bidentate, and the distance between the Al and P atoms is determined to be the main influencing parameter for a thermodynamically stable formation of the Al-O-P bond.

Solid-State Densification of Spun-Cast Self-Assembled Monolayers for Use in Ultra-Thin Hybrid Dielectrics

Ultra-thin self-assembled monolayer (SAM)-oxide hybrid dielectrics have gained significant interest for their application in low-voltage organic thin film transistors (OTFTs). A [8-(11-phenoxy-undecyloxy)-octyl]phosphonic acid (PhO-19-PA) SAM on ultrathin AlOx (2.5 nm) has been developed to significantly enhance the dielectric performance of inorganic oxides through reduction of leakage current while maintaining similar capacitance to the underlying oxide structure. Rapid processing of this SAM in ambient conditions is achieved by spin coating, however, as-cast monolayer density is not sufficient for dielectric applications. Thermal annealing of a bulk spun-cast PhO-19-PA molecular film is explored as a mechanism for SAM densification. SAM density, or surface coverage, and order are examined as a function of annealing temperature. These SAM characteristics are probed through atomic force microscopy (AFM), X-ray photoelectron spectroscopy (XPS), and near edge X-ray absorption fine structure spectroscopy (NEXAFS). It is found that at temperatures sufficient to melt the as-cast bulk molecular film, SAM densification is achieved; leading to a rapid processing technique for high performance SAM-oxide hybrid dielectric systems utilizing a single wet processing step. To demonstrate low-voltage devices based on this hybrid dielectric (with leakage current density of 7.7×10-8 A cm-2 and capacitance density of 0.62 µF cm-2 at 3 V), pentacene thin-film transistors (OTFTs) are fabricated and yield sub 2 V operation and charge carrier mobilites of up to 1.1 cm2 V-1 s-1.

Environment-controlled tethering by aggregation and growth of phosphonic acid monolayers on silicon oxide

Phosphonic acid monolayers are being considered as versatile surface modification agents due to their unique ability to attach to surfaces in different configurations, including mono-, bi-, or even tridentate arrangements. Tethering by aggregation and growth (T-BAG) of octadecylphosphonic acid (ODPA) on silicon oxide surfaces has proven to be a robust method to establish a strong chemical bond. However, it requires a long processing time (> 48 h) that is a substantial drawback for industrial applications. We demonstrate here that the humidity level during processing is the most important parameter controlling the reaction. Using in situ Fourier Transform Infrared Spectroscopy (FTIR), we first show that the initially physisorbed layer obtained upon immersion in ODPA is composed of well-ordered bilayers and only reacts with the SiO(2) surface at 140 °C. Importantly, we show that the presence of water at the interface (determined by the humidity level) greatly influences the reaction time and completion. In humid environments (relative humidity, RH > 40%), there is no reaction, while in dry environments (RH < 16%), the reaction is essentially instantaneous at 140 °C. Ab initio calculations and modeling confirm that the degree of chemical reaction with the surface OH groups depends on the chemical potential (i.e., concentration) of interfacial water molecules. These findings provide a workable modification of the traditional T-BAG method consistent with many industrial applications.

Activation of surface hydroxyl groups by modification of H-terminated Si(111) surfaces

Chemical functionalization of semiconductor surfaces, particularly silicon oxide, has enabled many technologically important applications (e.g., sensing, photovoltaics, and catalysis). For such processes, hydroxyl groups terminating the oxide surface constitute the primary reaction sites. However, their reactivity is often poor, hindering technologically important processes, such as surface phosphonation requiring a lengthy postprocessing annealing step at 140 °C with poor control of the bonding geometry. Using a novel oxide-free surface featuring a well-defined nanopatterned OH coverage, we demonstrate that hydroxyl groups on oxide-free silicon are more reactive than on silicon oxide. On this model surface, we show that a perfectly ordered layer of monodentate phosphonic acid molecules is chemically grafted at room temperature, and explain why it remains completely stable in aqueous environments, in contrast to phosphonates grafted on silicon oxides. This fundamental understanding of chemical activity and surface stability suggests new directions to functionalize silicon for sensors, photovoltaic devices, and nanoelectronics.