A hard oxide semiconductor with a direct and narrow bandgap and switchable p-n electrical conduction

Giant Room-Temperature Power Factor in p-Type Thermoelectric SnSe under High Pressure

Materials that can efficiently convert heat into electricity are widely utilized in energy conversion technologies. The existing thermoelectrics demonstrate rather limited performance characteristics at room temperature, and hence, alternative materials and approaches are very much in demand. Here, it is experimentally shown that manipulating an applied stress can greatly improve a thermoelectric power factor of layered p-type SnSe single crystals up to ≈180 µW K^-2 cm^-1 at room temperature. This giant enhancement is explained by a synergetic effect of three factors, such as: band-gap narrowing, Lifshitz transition, and strong sample deformation. Under applied pressure above 1 GPa, the SnSe crystals become more ductile, which can be related to changes in the prevailing chemical bonding type inside the layers, from covalent toward metavalent. Thus, the SnSe single crystals transform into a highly unconventional crystalline state in which their layered crystal stacking is largely preserved, while the layers themselves are strongly deformed. This results in a dramatic narrowing in a band gap, from E_g = 0.83 to 0.50 eV (at ambient conditions). Thus, the work demonstrates a novel strategy of improving the performance parameters of chalcogenide thermoelectrics via tuning their chemical bonding type, stimulating a sample deformation and a band-structure reconstruction.

An electrically conductive and ferromagnetic nano-structure manganese mono-boride with high Vickers hardness

The combination of various desired physical properties greatly extends the applicability of materials. Magnetic materials are generally mechanically soft, yet the combination of high mechanical hardness and ferromagnetic properties is highly sought after. Here, we report the synthesis and characterization of nanocrystalline manganese boride, CrB-type MnB, using the high-pressure and high-temperature method in a large volume press. CrB-type MnB shares the specificity of large numbers of unpaired electrons of manganese ions and strong covalent boron zigzag chains. Thus, manganese mono-boride exhibits "strong" ferromagnetic, magnetocaloric behavior, and possesses high Vickers hardness. We demonstrate that zigzag boron chains in this structure not only play a pivotal role in strengthening mechanical properties but also tuning the exchange correlations between manganese atoms. Nontoxic and Earth-abundant CrB-type MnB is much more incompressible and tougher than traditional ferromagnetic materials. The unique combination of high mechanical hardness, magnetism, and electrical conductivity properties makes it a particularly promising candidate for a wide range of applications.

Synthesis of Ilmenite-type ε-Mn2O3 and Its Properties

In contrast to the corundum-type A₂X₃ structure, which has only one crystallographic site available for trivalent cations (e.g., in hematite), the closely related ABX₃ ilmenite-type structure comprises two different octahedrally coordinated positions that are usually filled with differently charged ions (e.g., in Fe²⁺Ti⁴⁺O₃ ilmenite). Here, we report a synthesis of the first binary ilmenite-type compound fabricated from a simple transition-metal oxide (Mn₂O₃) at high-pressure high-temperature (HP-HT) conditions. We experimentally established that, at normal conditions, the ilmenite-type Mn²⁺Mn⁴⁺O₃ (ε-Mn₂O₃) is an n-type semiconductor with an indirect narrow band gap of E_g = 0.55 eV. Comparative investigations of the electronic properties of ε-Mn₂O₃ and previously discovered quadruple perovskite ζ-Mn₂O₃ phase were performed using X-ray absorption near edge spectroscopy. Magnetic susceptibility measurements reveal an antiferromagnetic ordering in ε-Mn₂O₃ below 210 K. The synthesis of ε-Mn₂O₃ indicates that HP-HT conditions can induce a charge disproportionation in simple transition-metal oxides A₂O₃, and potentially various mixed-valence polymorphs of these oxides, for example, with ilmenite-type, LiNbO₃-type, perovskite-type, and other structures, could be stabilized at HP-HT conditions.

Structural Stability and Properties of Marokite-Type γ-Mn3O4

We synthesized single crystals of marokite (CaMn₂O₄)-type orthorhombic manganese (II,III) oxide, γ-Mn₃O₄, in a multianvil apparatus at pressures of 10-24 GPa. The magnetic, electronic, and optical properties of the crystals were investigated at ambient pressure. It was found that γ-Mn₃O₄ is a semiconductor with an indirect band gap E_g of 0.96 eV and two antiferromagnetic transitions (T_N) at ∼200 and ∼55 K. The phase stability of the γ-Mn₃O₄ crystals was examined in the pressure range of 0-60 GPa using single-crystal X-ray diffraction and Raman spectroscopy. A bulk modulus of γ-Mn₃O₄ was determined to be B₀ = 235.3(2) GPa with B' = 2.6(6). The γ-Mn₃O₄ phase persisted over the whole pressure range studied and did not transform or decompose upon laser heating of the sample to ∼3500 K at 60 GPa. This result seems surprising, given the high-pressure structural diversity of iron oxides with similar stoichiometries. With an increase in pressure, the degree of distortion of MnO₆ polyhedra decreased. Furthermore, there are signs indicating a limited charge transfer between the Mn³⁺ ions in the octahedra and the Mn²⁺ ions in the trigonal prisms. Our results demonstrate that the high-pressure behavior of the structural, electronic, and chemical properties of manganese oxides strongly differs from that of iron oxides with similar stoichiometries.

A Room-Temperature Verwey-type Transition in Iron Oxide, Fe5 O6

Functional oxides whose physicochemical properties may be reversibly changed at standard conditions are potential candidates for the use in next‐generation nanoelectronic devices. To date, vanadium dioxide (VO₂) is the only known simple transition‐metal oxide that demonstrates a near‐room‐temperature metal–insulator transition that may be used in such appliances. In this work, we synthesized and investigated the crystals of a novel mixed‐valent iron oxide with an unconventional Fe₅O₆ stoichiometry. Near 275 K, Fe₅O₆ undergoes a Verwey‐type charge‐ordering transition that is concurrent with a dimerization in the iron chains and a following formation of new Fe−Fe chemical bonds. This unique feature highlights Fe₅O₆ as a promising candidate for the use in innovative applications. We established that the minimal Fe−Fe distance in the octahedral chains is a key parameter that determines the type and temperature of charge ordering. This model provides new insights into charge‐ordering phenomena in transition‐metal oxides in general.

Controlling the thermoelectric power of silicon–germanium alloys in different crystalline phases by applying high pressure

Si–Ge crystals are promising materials for use in various stress-controlled electronic junctions for next-generation nanoelectronic devices.

Formation and Stability of Nontoxic Perovskite Precursor

Strontium, calcium, and magnesium silicate hydrate phases are synthesized by the reaction between silica and solution of metal hydroxides. The kinetics of the reaction is recorded using a quartz crystal microbalance (QCM), continuously monitoring the change in frequency and dissipation energy. Based on QCM results, it is shown that properties of solutions like the pH-value or the type of ions play a pivotal function on the rate-determining stage of the reaction, the thickness of the diffuse layer, the formation of carbonates, as well as the kinetics of the formed phases. Further properties of the reaction products are investigated using X-ray photoelectron spectroscopy (XPS), scanning electron microscopy (SEM), and infrared spectroscopy (IR). With the help of thermogravimetric analysis (TGA) and temperature-dependent X-ray diffraction (XRD), we investigate how our synthesized phases can be turned into MSiO₃ structures. Finally, the Goldschmidt rules for perovskites structures show that this might be an attractive way for new and nontoxic phases in the future.

Pressure-Induced Phase Transitions in Sesquioxides

Pressure is an important thermodynamic parameter, allowing the increase of matter density by reducing interatomic distances that result in a change of interatomic interactions. In this context, the long range in which pressure can be changed (over six orders of magnitude with respect to room pressure) may induce structural changes at a much larger extent than those found by changing temperature or chemical composition. In this article, we review the pressure-induced phase transitions of most sesquioxides, i.e., A2O3 compounds. Sesquioxides constitute a big subfamily of ABO3 compounds, due to their large diversity of chemical compositions. They are very important for Earth and Materials Sciences, thanks to their presence in our planet’s crust and mantle, and their wide variety of technological applications. Recent discoveries, hot spots, controversial questions, and future directions of research are highlighted.

Pressure-Driven Reversible Switching between n- and p-Type Conduction in Chalcopyrite CuFeS2

Temperature-dependent switching between p- and n-type conduction is a newly observed phenomenon in very few Ag-based semiconductors, which may promote fascinating applications in modern electronics. Pressure, as an efficient external stimulus that has driven collective phenomena such as spin-crossover and Mott transition, is also expected to initialize a conduction-type switching in transition metal-based semiconductors. Herein, we report the observation of a pressure-driven dramatic switching between p- and n-type conduction in chalcopyrite CuFeS₂ associated with a structural phase transition. Under compression around 8 GPa, CuFeS₂ undergoes a phase transition with symmetry breakdown from space group I-42 d to space group I-4 accompanying with a remarkable volume shrinkage of the FeS₄ tetrahedra. A high-to-low spin-crossover of Fe²⁺ ( S = 2 to S = 0) is manifested along with this phase transition. Instead of pressure-driven metallization, a surprising semiconductor-to-semiconductor transition is observed associated with the structural and electronic transformations. Significantly, both photocurrent and Hall coefficient measurements confirm that CuFeS₂ undergoes a reversible pressure-driven p- n conduction type switching accompanying with the structural phase transition. The absence of cationic charge transfer between copper and iron during the phase transition is confirmed by both X-ray absorption near-edge spectra (Cu/Fe, K-edge) and total-fluorescence-yield X-ray absorption spectra (Fe, K-edge) results, and the valence distribution maintains Cu²⁺Fe²⁺S₂ in the high-pressure phase. The observation of an abrupt pressure-driven p- n conduction type switching in a transition metal-based semiconductor paves the way to novel pressure-responsive switching devices.

Pressure tuning of charge ordering in iron oxide

A Verwey-type charge-ordering transition in magnetite at 120 K leads to the formation of linear units of three iron ions with one shared electron, called trimerons. The recently-discovered iron pentoxide (Fe₄O₅) comprising mixed-valent iron cations at octahedral chains, demonstrates another unusual charge-ordering transition at 150 K involving competing formation of iron trimerons and dimerons. Here, we experimentally show that applied pressure can tune the charge-ordering pattern in Fe₄O₅ and strongly affect the ordering temperature. We report two charge-ordered phases, the first of which may comprise both dimeron and trimeron units, whereas, the second exhibits an overall dimerization involving both the octahedral and trigonal-prismatic chains of iron in the crystal structure. We link the dramatic change in the charge-ordering pattern in the second phase to redistribution of electrons between the octahedral and prismatic iron chains, and propose that the average oxidation state of the iron cations can pre-determine a charge-ordering pattern.

The charge order transition of commonly known magnetite has only recently been unraveled. Here, the measurement of the low-temperature high-pressure phase diagram of a related material (Fe₄O₅) elucidates the interplay of average oxidation state and charge-ordering phenomena in the iron oxide family.

Spin-induced multiferroicity in the binary perovskite manganite Mn2O3

The ABO₃ perovskite oxides exhibit a wide range of interesting physical phenomena remaining in the focus of extensive scientific investigations and various industrial applications. In order to form a perovskite structure, the cations occupying the A and B positions in the lattice, as a rule, should be different. Nevertheless, the unique binary perovskite manganite Mn₂O₃ containing the same element in both A and B positions can be synthesized under high-pressure high-temperature conditions. Here, we show that this material exhibits magnetically driven ferroelectricity and a pronounced magnetoelectric effect at low temperatures. Neutron powder diffraction revealed two intricate antiferromagnetic structures below 100 K, driven by a strong interplay between spin, charge, and orbital degrees of freedom. The peculiar multiferroicity in the Mn₂O₃ perovskite is ascribed to a combined effect involving several mechanisms. Our work demonstrates the potential of binary perovskite oxides for creating materials with highly promising electric and magnetic properties.

Multiferroic binary oxides with the perovskite structure have been very rare. Here, Cong et al. report magnetically-driven ferroelectricity and a large magnetoelectric effect in a binary perovskite compound Mn₂O₃ at low temperatures.

Structural and Magnetic Transitions in CaCo3V4O12 Perovskite at Extreme Conditions

We investigated the structural, vibrational, magnetic, and electronic properties of the recently synthesized CaCo₃V₄O₁₂ double perovskite with the high-spin (HS) Co²⁺ ions in a square-planar oxygen coordination at extreme conditions of high pressures and low temperatures. The single-crystal X-ray diffraction and Raman spectroscopy studies up to 60 GPa showed a conservation of its cubic crystal structure but indicated a crossover near 30 GPa. Above 30 GPa, we observed both an abnormally high "compressibility" of the Co-O bonds in the square-planar oxygen coordination and a huge anisotropic displacement of HS-Co²⁺ ions in the direction perpendicular to the oxygen planes. Although this effect is reminiscent of a continuous HS → LS transformation of the Co²⁺ ions, it did not result in the anticipated shrinkage of the cell volume because of a certain "stiffing" of the bonds of the Ca and V cations. We verified that the oxidation states of all the cations did not change across this crossover, and hence, no charge-transfer effects were involved. Consequently, we proposed that CaCo₃V₄O₁₂ could undergo a phase transition at which the large HS-Co²⁺ ions were pushed out of the oxygen planes because of lattice compression. The antiferromagnetic transition in CaCo₃V₄O₁₂ at 100 K was investigated by neutron powder diffraction at ambient pressure. We established that the magnetic moments of the Co²⁺ ions were aligned along one of the cubic axes, and the magnetic structure had a 2-fold periodicity along this axis, compared to the crystallographic one.

Dramatic Changes in Thermoelectric Power of Germanium under Pressure: Printing n-p Junctions by Applied Stress

Controlled tuning the electrical, optical, magnetic, mechanical and other characteristics of the leading semiconducting materials is one of the primary technological challenges. Here, we demonstrate that the electronic transport properties of conventional single-crystalline wafers of germanium may be dramatically tuned by application of moderate pressures. We investigated the thermoelectric power (Seebeck coefficient) of p– and n–type germanium under high pressure to 20 GPa. We established that an applied pressure of several GPa drastically shifts the electrical conduction to p–type. The p–type conduction is conserved across the semiconductor-metal phase transition at near 10 GPa. Upon pressure releasing, germanium transformed to a metastable st12 phase (Ge-III) with n–type semiconducting conductivity. We proposed that the unusual electronic properties of germanium in the original cubic-diamond-structured phase could result from a splitting of the “heavy” and “light” holes bands, and a related charge transfer between them. We suggested new innovative applications of germanium, e.g., in technologies of printing of n–p and n–p–n junctions by applied stress. Thus, our work has uncovered a new face of germanium as a ‘smart’ material.

Significant improvement in Mn2O3 transition metal oxide electrical conductivity via high pressure

Highly efficient energy storage is in high demand for next-generation clean energy applications. As a promising energy storage material, the application of Mn₂O₃ is limited due to its poor electrical conductivity. Here, high-pressure techniques enhanced the electrical conductivity of Mn₂O₃ significantly. In situ synchrotron micro X-Ray diffraction, Raman spectroscopy and resistivity measurement revealed that resistivity decreased with pressure and dramatically dropped near the phase transition. At the highest pressure, resistivity reduced by five orders of magnitude and the sample showed metal-like behavior. More importantly, resistivity remained much lower than its original value, even when the pressure was fully released. This work provides a new method to enhance the electronic properties of Mn₂O₃ using high-pressure treatment, benefiting its applications in energy-related fields.

Tuning the electronic and vibrational properties of Sn2P2Se6and Pb2P2S6crystals and their metallization under high pressure

Ferroelectric Sn₂P₂Se₆and paraelectric Pb₂P₂S₆demonstrate the remarkable responses of their electronic band structures to applied high pressures.

Charge-ordering transition in iron oxide Fe4O5 involving competing dimer and trimer formation

Phase transitions that occur in materials, driven, for instance, by changes in temperature or pressure, can dramatically change the materials' properties. Discovering new types of transitions and understanding their mechanisms is important not only from a fundamental perspective, but also for practical applications. Here we investigate a recently discovered Fe4O5 that adopts an orthorhombic CaFe3O5-type crystal structure that features linear chains of Fe ions. On cooling below ∼150 K, Fe4O5 undergoes an unusual charge-ordering transition that involves competing dimeric and trimeric ordering within the chains of Fe ions. This transition is concurrent with a significant increase in electrical resistivity. Magnetic-susceptibility measurements and neutron diffraction establish the formation of a collinear antiferromagnetic order above room temperature and a spin canting at 85 K that gives rise to spontaneous magnetization. We discuss possible mechanisms of this transition and compare it with the trimeronic charge ordering observed in magnetite below the Verwey transition temperature.