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For: Gao L, Liao Q, Zhang X, Liu X, Gu L, Liu B, Du J, Ou Y, Xiao J, Kang Z, Zhang Z, Zhang Y. Defect-Engineered Atomically Thin MoS₂ Homogeneous Electronics for Logic Inverters. Adv Mater 2020;32:e1906646. [PMID: 31743525 DOI: 10.1002/adma.201906646] [Citation(s) in RCA: 47] [Impact Index Per Article: 9.4] [Reference Citation Analysis] [What about the content of this article? (0)] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/10/2019] [Revised: 10/28/2019] [Indexed: 06/10/2023]

For:	Gao L, Liao Q, Zhang X, Liu X, Gu L, Liu B, Du J, Ou Y, Xiao J, Kang Z, Zhang Z, Zhang Y. Defect-Engineered Atomically Thin MoS₂ Homogeneous Electronics for Logic Inverters. Adv Mater 2020;32:e1906646. [PMID: 31743525 DOI: 10.1002/adma.201906646] [Citation(s) in RCA: 47] [Impact Index Per Article: 9.4] [Reference Citation Analysis] [What about the content of this article? (0)] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/10/2019] [Revised: 10/28/2019] [Indexed: 06/10/2023]

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(The first 100,000 artilces are displayed in RCA.)