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Wang Z, Kalathingal V, Trushin M, Liu J, Wang J, Guo Y, Özyilmaz B, Nijhuis CA, Eda G. Upconversion electroluminescence in 2D semiconductors integrated with plasmonic tunnel junctions. NATURE NANOTECHNOLOGY 2024:10.1038/s41565-024-01650-0. [PMID: 38641642 DOI: 10.1038/s41565-024-01650-0] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/10/2023] [Accepted: 03/13/2024] [Indexed: 04/21/2024]
Abstract
Plasmonic tunnel junctions are a unique electroluminescent system in which light emission occurs via an interplay between tunnelling electrons and plasmonic fields instead of electron-hole recombination as in conventional light-emitting diodes. It was previously shown that placing luminescent molecules in the tunneling pathway of nanoscopic tunnel junctions results in peculiar upconversion electroluminescence where the energy of emitted photons exceeds that of excitation electrons. Here we report the observation of upconversion electroluminescence in macroscopic van der Waals plasmonic tunnel junctions comprising gold and few-layer graphene electrodes separated by a ~2-nm-thick hexagonal boron nitride tunnel barrier and a monolayer semiconductor. We find that the semiconductor ground exciton emission is triggered at excitation electron energies lower than the semiconductor optical gap. Interestingly, this upconversion is reached in devices operating at a low conductance (<10-6 S) and low power density regime (<102 W cm-2), defying explanation through existing proposed mechanisms. By examining the scaling relationship between plasmonic and excitonic emission intensities, we elucidate the role of inelastic electron tunnelling dipoles that induce optically forbidden transitions in the few-layer graphene electrode and ultrafast hot carrier transfer across the van der Waals interface.
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Affiliation(s)
- Zhe Wang
- Department of Chemistry, National University of Singapore, Singapore, Singapore
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore, Singapore
| | - Vijith Kalathingal
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore, Singapore
- Department of Physics, Kannur University, Swami Anandatheertha Campus-Payyanur, Kannur, India
| | - Maxim Trushin
- Institute for Functional Intelligent Materials, National University of Singapore, Singapore, Singapore
- Centre for Advanced 2D Materials and Graphene Research Centre, National University of Singapore, Singapore, Singapore
- Department of Material Science and Engineering, National University of Singapore, Singapore, Singapore
| | - Jiawei Liu
- Institute for Functional Intelligent Materials, National University of Singapore, Singapore, Singapore
- Centre for Advanced 2D Materials and Graphene Research Centre, National University of Singapore, Singapore, Singapore
- Department of Physics, National University of Singapore, Singapore, Singapore
| | - Junyong Wang
- CAS Key Laboratory of Nano-Bio Interface and Key Laboratory of Nanodevices and Applications, i-Lab, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, China
| | - Yongxin Guo
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore, Singapore
| | - Barbaros Özyilmaz
- Institute for Functional Intelligent Materials, National University of Singapore, Singapore, Singapore
- Centre for Advanced 2D Materials and Graphene Research Centre, National University of Singapore, Singapore, Singapore
- Department of Material Science and Engineering, National University of Singapore, Singapore, Singapore
- Department of Physics, National University of Singapore, Singapore, Singapore
| | - Christian A Nijhuis
- Hybrid Materials for Opto-Electronics Group, Department of Molecules and Materials, MESA+ Institute for Nanotechnology, Molecules Center and Center for Brain-Inspired Nano Systems, Faculty of Science and Technology, University of Twente, Enschede, the Netherlands.
| | - Goki Eda
- Department of Chemistry, National University of Singapore, Singapore, Singapore.
- Centre for Advanced 2D Materials and Graphene Research Centre, National University of Singapore, Singapore, Singapore.
- Department of Physics, National University of Singapore, Singapore, Singapore.
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2
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Ma L, Wang Y, Liu Y. van der Waals Contact for Two-Dimensional Transition Metal Dichalcogenides. Chem Rev 2024; 124:2583-2616. [PMID: 38427801 DOI: 10.1021/acs.chemrev.3c00697] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 03/03/2024]
Abstract
Two-dimensional (2D) transition metal dichalcogenides (TMDs) have emerged as highly promising candidates for next-generation electronics owing to their atomically thin structures and surfaces devoid of dangling bonds. However, establishing high-quality metal contacts with TMDs presents a critical challenge, primarily attributed to their ultrathin bodies and delicate lattices. These distinctive characteristics render them susceptible to physical damage and chemical reactions when conventional metallization approaches involving "high-energy" processes are implemented. To tackle this challenge, the concept of van der Waals (vdW) contacts has recently been proposed as a "low-energy" alternative. Within the vdW geometry, metal contacts can be physically laminated or gently deposited onto the 2D channel of TMDs, ensuring the formation of atomically clean and electronically sharp contact interfaces while preserving the inherent properties of the 2D TMDs. Consequently, a considerable number of vdW contact devices have been extensively investigated, revealing unprecedented transport physics or exceptional device performance that was previously unachievable. This review presents recent advancements in vdW contacts for TMD transistors, discussing the merits, limitations, and prospects associated with each device geometry. By doing so, our purpose is to offer a comprehensive understanding of the current research landscape and provide insights into future directions within this rapidly evolving field.
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Affiliation(s)
- Likuan Ma
- Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha 410082, China
| | - Yiliu Wang
- Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha 410082, China
| | - Yuan Liu
- Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha 410082, China
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Lei Y, Xie X, Ma H, Ma J. Vitality of Intralayer Vibration in hBN for Effective Long-Range Interlayer Hole Transfer across High Barriers in MoSe 2/hBN/WSe 2 Heterostructures. J Phys Chem Lett 2023:11190-11199. [PMID: 38055859 DOI: 10.1021/acs.jpclett.3c03040] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/08/2023]
Abstract
Introducing the two-dimensional (2D) hexagonal boron nitride (hBN) between 2D transition metal dichalcogenide (TMD) layers promises convenient manipulation of the interlayer exciton (IX) and interlayer charge transfer in TMD/hBN/TMD heterostructures, while the role of inserted hBN layers during IX formation is controversial. Employing ab initio nonadiabatic molecular dynamics (NAMD) simulations and the electron-phonon coupling model, we systematically investigate interlayer hole transfer in MoSe2/WSe2 bilayers intercalated by hBN layers with various thicknesses. The conventional direct hole transfer from MoSe2 to WSe2 is decelerated by 2-3 orders of magnitude after the hBN insertion. Meanwhile, a novel channel intermediated by a deeper hole of WSe2 becomes dominant, where the intralayer shear mode of hBN plays a crucial role by reducing the energy barriers for this new channel. The unique role of hBN layers is revealed for the first time, enriching the knowledge of the underlying microscopic mechanisms and providing instructive guidance to practical van der Waals optoelectronic devices.
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Affiliation(s)
- Yuli Lei
- Key Laboratory of Mesoscopic Chemistry of Ministry of Education, School of Chemistry and Chemical Engineering, Nanjing University, Nanjing 210023, China
| | - Xiaoyu Xie
- Qingdao Institute for Theoretical and Computational Sciences, Qingdao Institute of Frontier and Interdisciplinary Science, Shandong University, Qingdao 266237, China
| | - Haibo Ma
- Qingdao Institute for Theoretical and Computational Sciences, Qingdao Institute of Frontier and Interdisciplinary Science, Shandong University, Qingdao 266237, China
| | - Jing Ma
- Key Laboratory of Mesoscopic Chemistry of Ministry of Education, School of Chemistry and Chemical Engineering, Nanjing University, Nanjing 210023, China
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Kuznetsov IO, Kartsev PF. Method and computer library for calculation of the Boltzmann collision integrals on discrete momentum lattice. Phys Rev E 2023; 107:055304. [PMID: 37329067 DOI: 10.1103/physreve.107.055304] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/01/2020] [Accepted: 04/04/2023] [Indexed: 06/18/2023]
Abstract
We present a general and numerically efficient method for calculation of collision integrals for interacting quantum gases on a discrete momentum lattice. Here we employ the original analytical approach based on Fourier transform covering a wide spectrum of solid-state problems with various particle statistics and arbitrary interaction models, including the case of momentum-dependent interaction. The comprehensive set of the transformation principles is given in detail and realized as a computer Fortran 90 library FLBE (Fast Library for Boltzmann Equation).
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Affiliation(s)
- I O Kuznetsov
- National Research Nuclear University MEPhI (Moscow Engineering Physics Institute), 115409 Moscow, Russia
| | - P F Kartsev
- National Research Nuclear University MEPhI (Moscow Engineering Physics Institute), 115409 Moscow, Russia
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Cheng Z, Cao R, Wei K, Yao Y, Liu X, Kang J, Dong J, Shi Z, Zhang H, Zhang X. 2D Materials Enabled Next-Generation Integrated Optoelectronics: from Fabrication to Applications. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2021; 8:e2003834. [PMID: 34105275 PMCID: PMC8188205 DOI: 10.1002/advs.202003834] [Citation(s) in RCA: 34] [Impact Index Per Article: 11.3] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/08/2020] [Revised: 01/04/2021] [Indexed: 05/06/2023]
Abstract
2D materials, such as graphene, black phosphorous and transition metal dichalcogenides, have gained persistent attention in the past few years thanks to their unique properties for optoelectronics. More importantly, introducing 2D materials into silicon photonic devices will greatly promote the performance of optoelectronic devices, including improvement of response speed, reduction of energy consumption, and simplification of fabrication process. Moreover, 2D materials meet the requirements of complementary metal-oxide-semiconductor compatible silicon photonic manufacturing. A comprehensive overview and evaluation of state-of-the-art 2D photonic integrated devices for telecommunication applications is provided, including light sources, optical modulators, and photodetectors. Optimized by unique structures such as photonic crystal waveguide, slot waveguide, and microring resonator, these 2D material-based photonic devices can be further improved in light-matter interactions, providing a powerful design for silicon photonic integrated circuits.
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Affiliation(s)
- Zhao Cheng
- Wuhan National Laboratory for OptoelectronicsHuazhong University of Science and TechnologyWuhan430074P. R. China
| | - Rui Cao
- Institute of Microscale OptoelectronicsCollaborative Innovation Centre for Optoelectronic Science & TechnologyKey Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong ProvinceCollege of Physics and Optoelectronic EngineeringShenzhen Key Laboratory of Micro‐Nano Photonic Information TechnologyGuangdong Laboratory of Artificial Intelligence and Digital Economy (SZ)Shenzhen UniversityShenzhen518060P. R. China
| | - Kangkang Wei
- Wuhan National Laboratory for OptoelectronicsHuazhong University of Science and TechnologyWuhan430074P. R. China
| | - Yuhan Yao
- Wuhan National Laboratory for OptoelectronicsHuazhong University of Science and TechnologyWuhan430074P. R. China
| | - Xinyu Liu
- Wuhan National Laboratory for OptoelectronicsHuazhong University of Science and TechnologyWuhan430074P. R. China
| | - Jianlong Kang
- Institute of Microscale OptoelectronicsCollaborative Innovation Centre for Optoelectronic Science & TechnologyKey Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong ProvinceCollege of Physics and Optoelectronic EngineeringShenzhen Key Laboratory of Micro‐Nano Photonic Information TechnologyGuangdong Laboratory of Artificial Intelligence and Digital Economy (SZ)Shenzhen UniversityShenzhen518060P. R. China
| | - Jianji Dong
- Wuhan National Laboratory for OptoelectronicsHuazhong University of Science and TechnologyWuhan430074P. R. China
| | - Zhe Shi
- Institute of Microscale OptoelectronicsCollaborative Innovation Centre for Optoelectronic Science & TechnologyKey Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong ProvinceCollege of Physics and Optoelectronic EngineeringShenzhen Key Laboratory of Micro‐Nano Photonic Information TechnologyGuangdong Laboratory of Artificial Intelligence and Digital Economy (SZ)Shenzhen UniversityShenzhen518060P. R. China
| | - Han Zhang
- Institute of Microscale OptoelectronicsCollaborative Innovation Centre for Optoelectronic Science & TechnologyKey Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong ProvinceCollege of Physics and Optoelectronic EngineeringShenzhen Key Laboratory of Micro‐Nano Photonic Information TechnologyGuangdong Laboratory of Artificial Intelligence and Digital Economy (SZ)Shenzhen UniversityShenzhen518060P. R. China
| | - Xinliang Zhang
- Wuhan National Laboratory for OptoelectronicsHuazhong University of Science and TechnologyWuhan430074P. R. China
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Wang Q, Wee ATS. Photoluminescence upconversion of 2D materials and applications. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2021; 33:223001. [PMID: 33784662 DOI: 10.1088/1361-648x/abf37f] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/06/2021] [Accepted: 03/30/2021] [Indexed: 06/12/2023]
Abstract
Photoluminescence (PL) upconversion is a phenomenon involving light-matter interactions, where the energy of emitted photons is higher than that of the incident photons. PL upconversion is an intriguing process in two-dimensional materials and specifically designed 2D heterostructures, which have potential upconversion applications in optoelectronic devices, bioimaging, and semiconductor cooling. In this review, we focus on the recent advances in photoluminescence upconversion in two-dimensional materials and their heterostructures. We discuss the upconversion mechanisms, applications, and future outlook of upconversion in two-dimensional materials.
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Affiliation(s)
- Qixing Wang
- Max Planck Institute for Solid State Research, Stuttgart D-70569, Germany
| | - Andrew T S Wee
- Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore 117551, Singapore
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7
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Qin X, Carneiro Neto AN, Longo RL, Wu Y, Malta OL, Liu X. Surface Plasmon-Photon Coupling in Lanthanide-Doped Nanoparticles. J Phys Chem Lett 2021; 12:1520-1541. [PMID: 33534586 DOI: 10.1021/acs.jpclett.0c03613] [Citation(s) in RCA: 21] [Impact Index Per Article: 7.0] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Lanthanide-doped nanoparticles have great potential for energy conversion applications, as their optical properties can be precisely controlled by varying the doping composition, concentration, and surface structures, as well as through plasmonic coupling. In this Perspective we highlight recent advances in upconversion emission modulation enabled by coupling upconversion nanoparticles with well-defined plasmonic nanostructures. We emphasize fundamental understanding of luminescence enhancement, monochromatic emission amplification, lifetime tuning, and polarization control at nanoscale. The interplay between localized surface plasmons and absorbed photons at the plasmonic metal-lanthanide interface substantially enriches the interpretation of plasmon-coupled nonlinear photophysical processes. These studies will enable novel functional nanomaterials or nanostructures to be designed for a multitude of technological applications, including biomedicine, lasing, optogenetics, super-resolution imaging, photovoltaics, and photocatalysis.
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Affiliation(s)
- Xian Qin
- Department of Chemistry, National University of Singapore, 3 Science Drive 3, Singapore 117543, Singapore
| | - Albano N Carneiro Neto
- Phantom-g, CICECO-Aveiro Institute of Materials, Department of Physics, University of Aveiro, Aveiro 3810-193, Portugal
| | - Ricardo L Longo
- Departamento de Química Fundamental, Universidade Federal de Pernambuco, Recife 50740-560, Brazil
| | - Yiming Wu
- Department of Chemistry, National University of Singapore, 3 Science Drive 3, Singapore 117543, Singapore
| | - Oscar L Malta
- Departamento de Química Fundamental, Universidade Federal de Pernambuco, Recife 50740-560, Brazil
| | - Xiaogang Liu
- Department of Chemistry, National University of Singapore, 3 Science Drive 3, Singapore 117543, Singapore
- Center for Functional Materials, National University of Singapore Suzhou Research Institute, Suzhou 215123, China
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