Germanium Nanosheets with Dirac Characteristics as a Saturable Absorber for Ultrafast Pulse Generation

Stable Q-switched and femtosecond mode-locked erbium-doped fiber laser based on a CuSe nanosheets saturable absorber

Stable Q-switched and femtosecond mode-locked erbium-doped fiber laser (EDFL) have been achieved using CuSe nanosheets as novel saturable absorber (SA), where the CuSe nanosheets were prepared by a hydrothermal method. The nonlinear optical properties of CuSe nanosheets were measured using an Z-scan setup, revealing nonlinear absorption coefficients of -3.67 ± 0.22 cm GW-1 at 1560 nm. The prepared CuSe nanosheets were mixed with polyvinyl alcohol (PVA) to obtain a CuSe-PVA SA with a modulation depth of 3.8 ± 0.13%, and it was utilized to realize a Q-switched EDFL, obtaining the narrowest pulse duration of 1.29 µs and the maximum output power of 5.96 mW, which corresponds to a pulse energy of up to 103.7 nJ. In addition, CuSe nanosheets were deposited on a D-shaped fiber (DSF) to fabricate a CuSe-DSF SA with a modulation depth of 5.6 ± 0.17%, and it was utilized to realize a mode-locked EDFL. The mode-locked EDFL demonstrated a low threshold of only 42 mW, a pulse duration of 740 fs, and a maximum output power of 9.7 mW. Meanwhile, it exhibited a high signal-to-noise ratio of 72 dB. To the best of our knowledge, this is the first time of CuSe nanosheets as SA in EDFL. The results demonstrate that CuSe nanosheets are a highly promising nonlinear optical material with great potential for applications in ultrafast photonics.

Germanene saturable absorber for mode-locked operation in an all-fiber laser with multiple dispersion environments

In this paper, a high-quality germanene-polyvinyl alcohol (PVA) saturable absorber (SA) with a modulation depth of 3.05% and a saturation intensity of 17.95M W/c m 2 was prepared. Stable conventional mode-locking and harmonic mode-locking (HML) were achieved in germanene-based Er-doped fiber lasers (EDFL) using dispersion management techniques. In a cavity with a net dispersion value of -0.22p s 2, the conventional soliton had a center wavelength of 1558.2 nm, a repetition frequency of 19.09 MHz, and a maximum 3 dB spectrum bandwidth of 3.5 nm. The highest repetition frequencies achieved in cavities with net dispersion values of -2.81p s 2, -1.73p s 2, and -1.09p s 2 were 9.48 MHz, 12.75 MHz, and 12.10 MHz for HML, respectively. Furthermore, the effects of dispersion, power, and the polarization state on HML were systematically investigated. Our research results fully demonstrate the capability of germanene as an optical modulator in generating conventional mode-locked and harmonic mode-locked solitons. This provides meaningful references for promoting its application in ultrafast fiber lasers.

Optimization of the cavity length and pulse characterization based on germanene as a saturable absorber in an Er-doped fiber laser

In this study, germanene-nanosheets (NSs) were synthesized by liquid-phase exfoliation, followed by an experimental investigation into the nonlinear saturable absorption characteristics and morphological structure of germanene. The germanene-NSs were employed as saturable absorbers, exhibiting saturation intensity and modulation depth values of 22.64M W/c m 2 and 4.48%, respectively. This demonstrated the feasibility of utilizing germanene-NSs passively mode-locked in an erbium-doped fiber laser (EDFL). By optimizing the cavity length, improvements in the output of EDFL characteristics were achieved, resulting in 883 fs pulses with a maximum average output power of 19.74 mW. The aforementioned experimental outcomes underscore the significant potential of germanene in the realms of ultrafast photonics and nonlinear optics.

Polymer-Embedding Germanium Nanostrip Waveguide of High Polarization Extinction

Germanium (Ge) nanostrip was embedded in a polymer and studied as a waveguide. The measurements reveal that this new type of semiconductor/polymer heterogeneous waveguide exhibits strong absorption for the TE mode from 1500 nm to 2004 nm, while the propagation loss for the TM mode declines from 20.56 dB/cm at 1500 nm to 4.89 dB/cm at 2004 nm. The transmission characteristics serve as an essential tool for verifying the optical parameters (n-κ, refractive index, and extinction coefficient) of the strip, addressing the ambiguity raised by spectroscopic ellipsometry regarding highly absorbing materials. Furthermore, the observed strong absorption for the TE mode at 2004 nm is well beyond the cut-off wavelength of the crystalline bulk Ge (~1850 nm at room temperature). This redshift is modeled to manifest the narrowing of the Tauc-fitted bandgap due to the grain order effect in the amorphous Ge layer. The accurate measurement of the nanometer-scale light-absorbing strips in a waveguide form is a crucial step toward the accurate design of integrated photonic devices that utilize such components.

The Ground State of Epitaxial Germanene on Ag(111)

Two-dimensional (2D) honeycomb lattices beyond graphene, such as germanene, appear very promising due to their outstanding electronic properties, such as the quantum spin Hall effects. While there have been many claims of germanene monolayers up to now, no experimental evidence of a honeycomb structure has been provided up to now for these grown monolayers. Using scanning tunneling microscopy (STM), surface X-ray diffraction (SXRD), and density functional theory, we have elucidated the Ge-induced ( 109 × 109 ) R ± 24.5 ° reconstruction on Ag(111). We demonstrate that a powerful algorithm combining SXRD with STM allows us to solve a giant surface reconstruction with more than a hundred atoms per unit cell. Its extensive unit cell indeed consists of 98 2-fold or 3-fold coordinated Ge atoms, forming a periodic arrangement of pentagons, hexagons, and heptagons, with the inclusion of six dispersed Ag atoms. By analogy, we show that the ( 7 7 × 7 7 ) R ± 19.1 ° reconstruction obtained by segregation of Ge through an epitaxial Ag/Ge(111) film possesses a similar structure, i.e., Ge pentagons/hexagons/heptagons with a few Ag atoms. Such an organization is more stable than that of pure Ge monolayers and can be assigned to the ground state of epitaxial germanene.

InSb-based saturable absorbers for ultrafast photonic applications

Sb-related III-V compounds have recently gained great research interest owing to their excellent optical and electrical characteristics, which provide many possibilities in photonics and electronics. This study investigated the application of InSb films in ultrafast photonics. An InSb film was fabricated on the tapered zone of a microfiber, and its saturation intensity, modulation depth, and non-saturable loss were determined as 119.8 MW cm^-2, 23.5%, and 27.3%, respectively. The structure of the electronic band and density of states of InSb were theoretically calculated. Notably, mode-locked and Q-switched fiber lasers were realised by incorporating the InSb-microfiber device into two different Er-doped fiber cavities. In the Q-switching state, the narrowest pulse duration was measured as 1.756 μs with a maximum single-pulse energy of 221.95 nJ and a signal-to-noise ratio of 60 dB. In the mode-locking operation, ultrafast lasers with a high signal-to-noise ratio (70 dB), a pulse width as narrow as 265 fs and a repetition rate of 49.51 MHz were acquired. Besides, the second-harmonic mode-locked state was built with an output power of 13.22 mW. In comparison with the reported laser performance with 2D materials as saturable absorbers, the InSb-based mode-locked and Q-switched fiber lasers proposed herein exhibit better comprehensive performance.

High performance 1.9 µm passively Q-switched bulk laser with germanene as a saturable absorber

Germanene is an analog of graphene, and its independent novel low-bending honeycomb structure gives outstanding advantages such as environmental stability and significant low-frequency optical absorbance. In this paper, the few-layer germanene was successfully prepared by the liquid phase exfoliation method. The saturable absorption characteristics of germanene in the infrared waveband were detected by the open-aperture Z-scan method. With germanene as a saturable absorber, a high-performance passively Q-switched bulk laser was realized at 1.9 µm. The shortest pulse width of 60.5 ns was obtained from continuous-wave pumping, corresponding to a single pulse energy of 6.7 µJ and peak power of 110 W. By utilizing the pulse pumping style with a repletion rate of 10 Hz, the single pulse energy and peak power increased to 45.8 µJ and 328 W, respectively, which exceeded all two-dimensional SA materials reported before. This research manifests that germanene is an excellent SA material for mid-infrared solid-state lasers.

Two types of ultrafast mode-locking operations from an Er-doped fiber laser based on germanene nanosheets

As a member of Xenes family, germanene has excellent nonlinear saturable absorption characteristics. In this work, we prepared germanene nanosheets by liquid phase exfoliation and measured their saturation intensity as 0.6 GW/cm² with a modulation depth of 8%. Then, conventional solitons with a pulse width of 946 fs and high-energy noise-like pulses with a pulse width of 784 fs were obtained by using germanene nanosheet as a saturable absorber for a mode-locked Erbium-doped fiber laser. The characteristics of the two types of pulses were investigated experimentally. The results reveal that germanene has great potential for modulation devices in ultrafast lasers and can be used as a material for creation of excellent nonlinear optical devices to explore richer applications in ultrafast photonics.

Symmetry-Guaranteed High Carrier Mobility in Quasi-2D Thermoelectric Semiconductors

Quasi-2D semiconductors have garnered immense research interest for next-generation electronics and thermoelectrics due to their unique structural, mechanical, and transport properties. However, most quasi-2D semiconductors experimentally synthesized so far have relatively low carrier mobility, preventing the achievement of exceptional power output. To break through this obstacle, a route is proposed based on the crystal symmetry arguments to facilitate the charge transport of quasi-2D semiconductors, in which the horizontal mirror symmetry is found to vanish the electron-phonon coupling strength mediated by phonons with purely out-of-plane vibrational vectors. This is demonstrated in ZrBeSi-type quasi-2D systems, where the representative sample Ba_1.01 AgSb shows a high room-temperature hole mobility of 344 cm² V^-1 S^-1 , a record value among quasi-2D polycrystalline thermoelectrics. Accompanied by intrinsically low thermal conductivity, an excellent p-type zT of ≈1.3 is reached at 1012 K, which is the highest value in ZrBeSi-type compounds. This work uncovers the relation between electron-phonon coupling and crystal symmetry in quasi-2D systems, which broadens the horizon to develop high mobility semiconductors for electronic and energy conversion applications.

2D BP/InSe Heterostructures as a Nonlinear Optical Material for Ultrafast Photonics

The BP/InSe heterojunction has attracted the attention of many fields in successful combined high hole mobility of black phosphorus (BP) and high electron mobility of indium selenide (InSe), and enhanced the environmental stability of BP. Nevertheless, photonics research on the BP/InSe heterostructure was insufficient, while both components are considered promising in the field. In this work, a two-dimensional (2D) BP/InSe heterostructure was fabricated using the liquid-phase exfoliation method. Its linear and non-linear optical (NLO) absorption was characterized by ultraviolet−visible−infrared and Open-aperture Z-scan technology. On account of the revealed superior NLO properties, an SA based on 2D BP/InSe was prepared and embedded into an erbium-doped fiber laser, traditional soliton pulses were observed at 1.5 μm with the pulse duration of 881 fs. Furthermore, harmonic mode locking of bound solitons and dark-bright soliton pairs were also obtained in the same laser cavity due to the cross-coupling effect. The stable mode-locked operation can be maintained for several days, which overcome the low air stability of BP. This contribution further proves the excellent optical properties of 2D BP/InSe heterostructure and provides new probability of developing nano-photonics devices for the applications of double pulses laser source and long-distance information transmission.

Low-Temperature PECVD Growth of Germanium for Mode-Locking of Er-Doped Fiber Laser

A low-temperature plasma-enhanced chemical vapor deposition grown germanium (Ge) thin-film is employed as a nonlinear saturable absorber (SA). This Ge SA can passively mode-lock the erbium-doped fiber laser (EDFL) for soliton generation at a central wavelength of 1600 nm. The lift-off and transfer of the Ge film synthesized upon the SiO₂/Si substrate are performed by buffered oxide etching and direct imprinting. The Ge film with a thickness of 200 nm exhibits its Raman peak at 297 cm⁻¹, which both the nanocrystalline and polycrystalline Ge phases contribute to. In addition, the Ge thin-film is somewhat oxidized but still provides two primary crystal phases at the (111) and (311) orientations with corresponding diffraction ring radii of 0.317 and 0.173 nm, respectively. The nanocrystalline structure at (111) orientation with a corresponding d-spacing of 0.319 nm is also observed. The linear and nonlinear transmittances of the Ge thin-film are measured to show its self-amplitude modulation coefficient of 0.016. This is better than nano-scale charcoal and carbon-black SA particles for initiating the mode-locking at the first stage. After the Ge-based saturable absorber into the L-band EDFL system without using any polarized components, the narrowest pulsewidth and broadest linewidth of the soliton pulse are determined as 654.4 fs and 4.2 nm, respectively, with a corresponding time–bandwidth product of 0.32 under high pumping conditions.

Switching the Nonlinear Optical Absorption of Titanium Carbide MXene by Modulation of the Surface Terminations

Surface terminations of two-dimensional materials should have a strong influence on the nonlinear optical (NLO) properties, but the relationship between surface terminations and NLO properties has not yet been reported. In this work, switching the NLO properties of MXenes (Ti₃C₂T_x) via "surface terminations modulation" is explored. The surface terminations of Ti₃C₂T_x are modulated by electrochemical treatment, resulting in different states (viz., Ti₃C₂T_x(pristine), Ti₃C₂T_x(═O rich), and Ti₃C₂T_x(-OH rich)). The sign and magnitude of the effective NLO absorption coefficient (β_eff) change with the surface terminations. Ti₃C₂T_x(═O rich) shows a relatively large saturable absorption (SA) with laser excitation at 515 nm (β_eff = -1020 ± 136.2 cm GW^-1), while reverse saturable absorption (RSA) is found in Ti₃C₂T_x(pristine) and Ti₃C₂T_x(-OH rich). The RSA of Ti₃C₂T_x(pristine) and Ti₃C₂T_x(-OH rich) is attributed to excited-state absorption, while the SA of Ti₃C₂T_x(═O rich) is associated with Pauli blocking. With laser excitation at 800 nm, the β_eff of Ti₃C₂T_x(-OH rich) is 113 ± 3.2 cm GW^-1, 1.68 times that of Ti₃C₂T_x(pristine); the RSA is caused by photon-induced absorption. Our results reveal a correlation between surface terminations and NLO properties, highlighting the potential of MXenes in photoelectronics.

Saturable absorption and self-defocusing response of 2D monoelemental germanium nanosheets in broadband spectra

Germanium has caused a research boom in recent years due to its high carrier mobility and good stability. Although germanium has been proven to have application potential in photodetectors and other fields, its nonlinear optical properties are rarely reported. Herein, we prepared 2D germanium nanosheets by liquid phase-exfoliation (LPE) method and studied its third-order nonlinear optical response. It is found that the germanium nanosheets exhibit a broadband nonlinear optical response such as it has a large nonlinear absorption coefficient α_NL ≈ -0.87 cm GW^-1 and a negative nonlinear refractive index n₂ ≈ -6.30 × 10^-13 cm² W^-1 at 1064 nm wavelength. The experimental results show the excellent nonlinear optical performance of germanium nanosheets and indicate that 2D germanium nanosheets have promising potential in a wide range of photonics device applications.