1
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Manako H, Ohsumi S, Sato YJ, Okazaki R, Aoki D. Large transverse thermoelectric effect induced by the mixed-dimensionality of Fermi surfaces. Nat Commun 2024; 15:3907. [PMID: 38724529 PMCID: PMC11081953 DOI: 10.1038/s41467-024-48217-0] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/19/2023] [Accepted: 04/24/2024] [Indexed: 05/12/2024] Open
Abstract
Transverse thermoelectric effect, the conversion of longitudinal heat current into transverse electric current, or vice versa, offers a promising energy harvesting technology. Materials with axis-dependent conduction polarity, known as p × n-type conductors or goniopolar materials, are potential candidate, because the non-zero transverse elements of thermopower tensor appear under rotational operation, though the availability is highly limited. Here, we report that a ternary metal LaPt2B with unique crystal structure exhibits axis-dependent thermopower polarity, which is driven by mixed-dimensional Fermi surfaces consisting of quasi-one-dimensional hole sheet with out-of-plane velocity and quasi-two-dimensional electron sheets with in-plane velocity. The ideal mixed-dimensional conductor LaPt2B exhibits an extremely large transverse Peltier conductivity up to ∣αyx∣ = 130 A K-1 m-1, and its transverse thermoelectric performance surpasses those of topological magnets utilizing the anomalous Nernst effect. These results thus manifest the mixed-dimensionality as a key property for efficient transverse thermoelectric conversion.
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Affiliation(s)
- Hikari Manako
- Department of Physics and Astronomy, Tokyo University of Science, Noda, Japan
| | - Shoya Ohsumi
- Department of Physics and Astronomy, Tokyo University of Science, Noda, Japan
| | - Yoshiki J Sato
- Department of Physics and Astronomy, Tokyo University of Science, Noda, Japan.
- Graduate School of Science and Engineering, Saitama University, Saitama, Japan.
| | - R Okazaki
- Department of Physics and Astronomy, Tokyo University of Science, Noda, Japan
| | - D Aoki
- Institute for Materials Research, Tohoku University, Oarai, Ibaraki, Japan
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2
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Völkl T, Aharon-Steinberg A, Holder T, Alpern E, Banu N, Pariari AK, Myasoedov Y, Huber ME, Hücker M, Zeldov E. Demonstration and imaging of cryogenic magneto-thermoelectric cooling in a van der Waals semimetal. NATURE PHYSICS 2024; 20:976-983. [PMID: 38882521 PMCID: PMC11178502 DOI: 10.1038/s41567-024-02417-z] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 08/21/2023] [Accepted: 01/25/2024] [Indexed: 06/18/2024]
Abstract
Attaining viable thermoelectric cooling at cryogenic temperatures is of considerable fundamental and technological interest for electronics and quantum materials applications. In-device temperature control can provide more efficient and precise thermal environment management compared with conventional global cooling. The application of a current and perpendicular magnetic field gives rise to cooling by generating electron-hole pairs on one side of the sample and to heating due to their recombination on the opposite side, which is known as the Ettingshausen effect. Here we develop nanoscale cryogenic imaging of the magneto-thermoelectric effect and demonstrate absolute cooling and an Ettingshausen effect in exfoliated WTe2 Weyl semimetal flakes at liquid He temperatures. In contrast to bulk materials, the cooling is non-monotonic with respect to the magnetic field and device size. Our model of magneto-thermoelectricity in mesoscopic semimetal devices shows that the cooling efficiency and the induced temperature profiles are governed by the interplay between sample geometry, electron-hole recombination length, magnetic field, and flake and substrate heat conductivities. The observations open the way for the direct integration of microscopic thermoelectric cooling and for temperature landscape engineering in van der Waals devices.
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Affiliation(s)
- T Völkl
- Department of Condensed Matter Physics, Weizmann Institute of Science, Rehovot, Israel
| | - A Aharon-Steinberg
- Department of Condensed Matter Physics, Weizmann Institute of Science, Rehovot, Israel
| | - T Holder
- Department of Condensed Matter Physics, Weizmann Institute of Science, Rehovot, Israel
- School of Physics and Astronomy, Tel Aviv University, Tel Aviv, Israel
| | - E Alpern
- Department of Condensed Matter Physics, Weizmann Institute of Science, Rehovot, Israel
| | - N Banu
- Department of Condensed Matter Physics, Weizmann Institute of Science, Rehovot, Israel
| | - A K Pariari
- Department of Condensed Matter Physics, Weizmann Institute of Science, Rehovot, Israel
| | - Y Myasoedov
- Department of Condensed Matter Physics, Weizmann Institute of Science, Rehovot, Israel
| | - M E Huber
- Departments of Physics and Electrical Engineering, University of Colorado Denver, Denver, CO USA
| | - M Hücker
- Department of Condensed Matter Physics, Weizmann Institute of Science, Rehovot, Israel
| | - E Zeldov
- Department of Condensed Matter Physics, Weizmann Institute of Science, Rehovot, Israel
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3
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Zou X, Wang R, Xie M, Tian F, Sun Y, Wang C. Nonsaturating Linear Magnetoresistance Manifesting Two-Dimensional Transport in Wet-Chemical Patternable Bi 2O 2Te Thin Films. NANO LETTERS 2023; 23:11742-11748. [PMID: 38064584 DOI: 10.1021/acs.nanolett.3c03645] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 12/28/2023]
Abstract
Two-dimensional (2D) materials with exotic transport behaviors have attracted extensive interest in microelectronics and condensed matter physics, while scaled-up 2D thin films compatible with the efficient wet-chemical etching process represent realistic advancement toward new-generation integrated functional devices. Here, thickness-controllable growth and chemical patterning of high-quality Bi2O2Te continuous films are demonstrated. Noticeably, except for an ultrahigh mobility (∼45074 cm2 V-1 s-1 at 2 K) and obvious Shubnikov-de Hass quantum oscillations, a 2D transport channel and large linear magnetoresistance are revealed in the patterned Bi2O2Te films. Investigation implies that the linear magnetoresistance correlates with the inhomogeneity described by P. B. Littlewood's theory and EMT-RRN theory developed recently. These results not only reveal the nonsaturating linear magnetoresistance in high-quality Bi2O2Te but shed light on understanding the corresponding physical origin of linear magnetoresistance in 2D high-mobility semiconductors and providing a pathway for the potential application in multifunctional electronic devices.
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Affiliation(s)
- Xiaobin Zou
- School of Materials Science and Engineering, State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangzhou 510275, People's Republic of China
| | - Ruize Wang
- School of Materials Science and Engineering, State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangzhou 510275, People's Republic of China
| | - Mingyuan Xie
- School of Physics, State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangzhou 510275, People's Republic of China
| | - Fei Tian
- School of Materials Science and Engineering, State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangzhou 510275, People's Republic of China
| | - Yong Sun
- School of Materials Science and Engineering, State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangzhou 510275, People's Republic of China
| | - Chengxin Wang
- School of Materials Science and Engineering, State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangzhou 510275, People's Republic of China
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4
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Zivieri R, Lumetti S, Létang J. High-Mobility Topological Semimetals as Novel Materials for Huge Magnetoresistance Effect and New Type of Quantum Hall Effect. MATERIALS (BASEL, SWITZERLAND) 2023; 16:7579. [PMID: 38138720 PMCID: PMC10744697 DOI: 10.3390/ma16247579] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/09/2023] [Revised: 12/04/2023] [Accepted: 12/06/2023] [Indexed: 12/24/2023]
Abstract
The quantitative description of electrical and magnetotransport properties of solid-state materials has been a remarkable challenge in materials science over recent decades. Recently, the discovery of a novel class of materials-the topological semimetals-has led to a growing interest in the full understanding of their magnetotransport properties. In this review, the strong interplay among topology, band structure, and carrier mobility in recently discovered high carrier mobility topological semimetals is discussed and their effect on their magnetotransport properties is outlined. Their large magnetoresistance effect, especially in the Hall transverse configuration, and a new version of a three-dimensional quantum Hall effect observed in high-mobility Weyl and Dirac semimetals are reviewed. The possibility of designing novel quantum sensors and devices based on solid-state semimetals is also examined.
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Affiliation(s)
| | | | - Jérémy Létang
- Silicon Austria Labs, 9524 Villach, Austria; (S.L.); (J.L.)
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5
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Zheng S, Xiao S, Peng K, Pan Y, Yang X, Lu X, Han G, Zhang B, Zhou Z, Wang G, Zhou X. Symmetry-Guaranteed High Carrier Mobility in Quasi-2D Thermoelectric Semiconductors. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2210380. [PMID: 36527338 DOI: 10.1002/adma.202210380] [Citation(s) in RCA: 7] [Impact Index Per Article: 7.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/08/2022] [Revised: 12/07/2022] [Indexed: 06/17/2023]
Abstract
Quasi-2D semiconductors have garnered immense research interest for next-generation electronics and thermoelectrics due to their unique structural, mechanical, and transport properties. However, most quasi-2D semiconductors experimentally synthesized so far have relatively low carrier mobility, preventing the achievement of exceptional power output. To break through this obstacle, a route is proposed based on the crystal symmetry arguments to facilitate the charge transport of quasi-2D semiconductors, in which the horizontal mirror symmetry is found to vanish the electron-phonon coupling strength mediated by phonons with purely out-of-plane vibrational vectors. This is demonstrated in ZrBeSi-type quasi-2D systems, where the representative sample Ba1.01 AgSb shows a high room-temperature hole mobility of 344 cm2 V-1 S-1 , a record value among quasi-2D polycrystalline thermoelectrics. Accompanied by intrinsically low thermal conductivity, an excellent p-type zT of ≈1.3 is reached at 1012 K, which is the highest value in ZrBeSi-type compounds. This work uncovers the relation between electron-phonon coupling and crystal symmetry in quasi-2D systems, which broadens the horizon to develop high mobility semiconductors for electronic and energy conversion applications.
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Affiliation(s)
- Sikang Zheng
- College of Physics and Center of Quantum Materials & Devices, Chongqing University, Chongqing, 401331, P. R. China
| | - Shijuan Xiao
- College of Physics and Center of Quantum Materials & Devices, Chongqing University, Chongqing, 401331, P. R. China
| | - Kunling Peng
- Interdisciplinary Center for Fundamental and Frontier Sciences, Nanjing University of Science and Technology, Jiangyin, 214443, P. R. China
| | - Yu Pan
- Max Planck Institute for Chemical Physics of Solids, 01187, Dresden, Germany
| | - Xiaolong Yang
- College of Physics and Center of Quantum Materials & Devices, Chongqing University, Chongqing, 401331, P. R. China
| | - Xu Lu
- College of Physics and Center of Quantum Materials & Devices, Chongqing University, Chongqing, 401331, P. R. China
| | - Guang Han
- College of Materials Science and Engineering and Center of Quantum Materials & Devices, Chongqing University, Chongqing, 401331, P. R. China
| | - Bin Zhang
- College of Physics and Center of Quantum Materials & Devices, Chongqing University, Chongqing, 401331, P. R. China
- Analytical and Testing Center, Chongqing University, Chongqing, 401331, P. R. China
| | - Zizhen Zhou
- College of Physics and Center of Quantum Materials & Devices, Chongqing University, Chongqing, 401331, P. R. China
| | - Guoyu Wang
- College of Materials Science and Engineering and Center of Quantum Materials & Devices, Chongqing University, Chongqing, 401331, P. R. China
| | - Xiaoyuan Zhou
- College of Physics and Center of Quantum Materials & Devices, Chongqing University, Chongqing, 401331, P. R. China
- Analytical and Testing Center, Chongqing University, Chongqing, 401331, P. R. China
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6
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Chen D, Wang B, Cui X, Yang H, Lu M, Cai D, Han W. Intercalation-induced amorphous hydrated vanadium oxide for boosted aqueous Zn 2+ storage. Chem Commun (Camb) 2023; 59:1365-1368. [PMID: 36649100 DOI: 10.1039/d2cc06667j] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/29/2022]
Abstract
An amorphous hydrated vanadium oxide induced by Zn2+ intercalation in Mg-ion inserted V2O5·nH2O (MgVOH) is developed as a high-performance cathode for ZIBs. In particular, zinc pyrovanadate as the product of the second phase transition is found to suppress the dissolution issue of the vanadium species for the cathode to facilitate long lifespan.
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Affiliation(s)
- Duo Chen
- Jiangsu Key Laboratory of Electrochemical Energy Storage Technologies, College of Materials Science and Technology, Nanjing University of Aeronautics and Astronautics, Nanjing 210016, China. .,College of Physics, State Key Laboratory of Inorganic Synthesis and Preparative Chemistry, International Center of Future Science, Jilin university, Changchun, 130012, P. R. China.
| | - Boran Wang
- Shenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute & Tsinghua Shenzhen International Graduate School, Tsinghua University, Shenzhen, 518055, P. R. China
| | - Xueliang Cui
- Jiangsu Key Laboratory of Electrochemical Energy Storage Technologies, College of Materials Science and Technology, Nanjing University of Aeronautics and Astronautics, Nanjing 210016, China.
| | - Hang Yang
- College of Physics, State Key Laboratory of Inorganic Synthesis and Preparative Chemistry, International Center of Future Science, Jilin university, Changchun, 130012, P. R. China.
| | - Mengjie Lu
- College of Physics, State Key Laboratory of Inorganic Synthesis and Preparative Chemistry, International Center of Future Science, Jilin university, Changchun, 130012, P. R. China.
| | - Dong Cai
- Key Laboratory of Carbon Materials of Zhejiang Province, Wenzhou University, Wenzhou, 325035, P. R. China
| | - Wei Han
- College of Physics, State Key Laboratory of Inorganic Synthesis and Preparative Chemistry, International Center of Future Science, Jilin university, Changchun, 130012, P. R. China.
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7
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Wang H, Zhou Z, Ying J, Xiang Z, Wang R, Wang A, Chai Y, He M, Lu X, Han G, Pan Y, Wang G, Zhou X, Chen X. Large Magneto-Transverse and Longitudinal Thermoelectric Effects in the Magnetic Weyl Semimetal TbPtBi. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2206941. [PMID: 36300801 DOI: 10.1002/adma.202206941] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/30/2022] [Revised: 10/04/2022] [Indexed: 06/16/2023]
Abstract
Magnetic topological semimetals provide new opportunities for power generation and solid-state cooling based on thermoelectric (TE) effect. The interplay between magnetism and nontrivial band topology prompts the magnetic topological semimetals to yield strong transverse TE effect, while the longitudinal TE performance is usually poor. Herein, it is demonstrated that the magnetic Weyl semimetal TbPtBi has high value for both transverse and longitudinal thermopower with large power factor (PF). At 300 K and 13.5 Tesla, the transverse thermopower and PF reach up to 214 µV K-1 and 35 µW cm-1 K-2 , respectively, which are comparable to those of state-of-the-art TE materials. Combining first-principles calculations, longitudinal magnetoresistance and planar Hall resistance measurements, and two-band model fitting, the large transverse thermopower and PF are attributed to both bipolar effect and large Hall angle. Moreover, the imperfectly compensated charge carriers and large transverse magnetoresistance induce the maximum magneto-longitudinal thermopower of 251 µV K-1 with a PF of 24 µW cm-1 K-2 at 150 K and 13.5 Tesla, which is two times higher than that at zero magnetic field. This work demonstrates the great potential of topological semimetals for TEs and offers a new excellent candidate for magneto-TEs.
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Affiliation(s)
- Honghui Wang
- College of Physics and Center of Quantum Materials & Devices, Chongqing University, Chongqing, 401331, P. R. China
| | - Zizhen Zhou
- College of Physics and Center of Quantum Materials & Devices, Chongqing University, Chongqing, 401331, P. R. China
| | - Jianjun Ying
- CAS Key Laboratory of Strongly-coupled Quantum Matter Physics, and Department of Physics, University of Science and Technology of China, Hefei, Anhui, 230026, P. R. China
| | - Ziji Xiang
- CAS Key Laboratory of Strongly-coupled Quantum Matter Physics, and Department of Physics, University of Science and Technology of China, Hefei, Anhui, 230026, P. R. China
| | - Rui Wang
- College of Physics and Center of Quantum Materials & Devices, Chongqing University, Chongqing, 401331, P. R. China
| | - Aifeng Wang
- College of Physics and Center of Quantum Materials & Devices, Chongqing University, Chongqing, 401331, P. R. China
| | - Yisheng Chai
- College of Physics and Center of Quantum Materials & Devices, Chongqing University, Chongqing, 401331, P. R. China
| | - Mingquan He
- College of Physics and Center of Quantum Materials & Devices, Chongqing University, Chongqing, 401331, P. R. China
| | - Xu Lu
- College of Physics and Center of Quantum Materials & Devices, Chongqing University, Chongqing, 401331, P. R. China
| | - Guang Han
- College of Materials Science and Engineering, Chongqing University, Chongqing, 400044, P. R. China
| | - Yu Pan
- Max Planck Institute for Chemical Physics of Solids, Dresden, Germany
| | - Guoyu Wang
- College of Materials Science and Engineering, Chongqing University, Chongqing, 400044, P. R. China
| | - Xiaoyuan Zhou
- College of Physics and Center of Quantum Materials & Devices, Chongqing University, Chongqing, 401331, P. R. China
- Analytical and Testing Center, Chongqing University, Chongqing, 401331, P. R. China
| | - Xianhui Chen
- CAS Key Laboratory of Strongly-coupled Quantum Matter Physics, and Department of Physics, University of Science and Technology of China, Hefei, Anhui, 230026, P. R. China
- High Magnetic Field Laboratory of the Chinese Academy of Sciences, Hefei, Anhui, 230031, P. R. China
- Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, P. R. China
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8
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Bora M, Deb P. Proximity induced longitudinal and transverse thermoelectric response in graphene-ferromagnetic CrBr 3vdW heterostructure. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2022; 35:055402. [PMID: 36395505 DOI: 10.1088/1361-648x/aca3e9] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/11/2022] [Accepted: 11/17/2022] [Indexed: 06/16/2023]
Abstract
The integration of longitudinal and transverse thermoelectric (TE) fosters various new opportunities in tuning the charge transport behaviour and opens a platform for efficient thermopower devices. The presence of asymmetric electronic structure supposed to accomplish large thermopower and electronic figure of merit. Herein, we investigate magnetic proximity coupled longitudinal and transverse TE behaviour in heterostructure of monolayer semimetal, graphene and a monolayer ferromagnet, CrBr3under the framework ofab initio-based calculations and employed constant relaxation time approximation (CRTA).The integrated density of states is elevated and asymmetric near Fermi energy region due to seamless proximity integration, depicting mixed character of graphene and CrBr3. The asymmetric nature of electronic structure significantly affects the Seebeck coefficients (S) and electrical conductivity (σ/τ) of heterostructure. The consistent step-like conductance spectrum influences interfacial polarization due to agile proximity integration. The magnitude of Seebeck coefficient (S) is found to be 653µV K-1near Fermi level. The heterostructure observes higher electrical conductivity and power factor in n-type region of the order of 106S m-1and 1020cm-3at room temperature. The dimensionless electronic figure of merit (zTe) advocates the heterostructure system to be an ideal TE material. Alongside longitudinal TE, we also find the heterostructure system is sensitive to anomalous Nernst effect (ANE) (transverse TE) with oscillatory nature. The Seebeck and ANE shows high degree of tunability with applied external electric field. The synergistic existence of Seebeck and ANE due to proximity integration in van der Waals atomic crystal at room temperature will provide realistic approach to experimentally fabricate and develop real-time thermopower devices.
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Affiliation(s)
- Mayuri Bora
- Advanced Functional Material Laboratory (AFML), Department of Physics, Tezpur University (Central University), Tezpur 784028, India
| | - Pritam Deb
- Advanced Functional Material Laboratory (AFML), Department of Physics, Tezpur University (Central University), Tezpur 784028, India
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Li P, Qiu P, Xu Q, Luo J, Xiong Y, Xiao J, Aryal N, Li Q, Chen L, Shi X. Colossal Nernst power factor in topological semimetal NbSb 2. Nat Commun 2022; 13:7612. [PMID: 36494353 PMCID: PMC9734562 DOI: 10.1038/s41467-022-35289-z] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/20/2022] [Accepted: 11/22/2022] [Indexed: 12/13/2022] Open
Abstract
Today solid-state cooling technologies below liquid nitrogen boiling temperature (77 K), crucial to quantum information technology and probing quantum state of matter, are greatly limited due to the lack of good thermoelectric and/or thermomagnetic materials. Here, we report the discovery of colossal Nernst power factor of 3800 × 10-4 W m-1 K-2 under 5 T at 25 K and high Nernst figure-of-merit of 71 × 10-4 K-1 under 5 T at 20 K in topological semimetal NbSb2 single crystals. The observed high thermomagnetic performance is attributed to large Nernst thermopower and longitudinal electrical conductivity, and relatively low transverse thermal conductivity. The large and unsaturated Nernst thermopower is the result of the combination of highly desirable electronic structures of NbSb2 having compensated high mobility electrons and holes near Fermi level and strong phonon-drag effect. This discovery opens an avenue for exploring material option for the solid-state heat pumping below liquid nitrogen temperature.
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Affiliation(s)
- Peng Li
- grid.9227.e0000000119573309State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, 200050 Shanghai, China ,grid.410726.60000 0004 1797 8419Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, 100049 Beijing, China
| | - Pengfei Qiu
- grid.9227.e0000000119573309State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, 200050 Shanghai, China ,grid.410726.60000 0004 1797 8419Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, 100049 Beijing, China
| | - Qing Xu
- grid.9227.e0000000119573309Key Laboratory of Infrared Imaging Materials and Devices, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 200083 Shanghai, China
| | - Jun Luo
- grid.9227.e0000000119573309State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, 200050 Shanghai, China ,grid.410726.60000 0004 1797 8419Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, 100049 Beijing, China
| | - Yifei Xiong
- grid.9227.e0000000119573309State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, 200050 Shanghai, China ,grid.410726.60000 0004 1797 8419Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, 100049 Beijing, China
| | - Jie Xiao
- grid.9227.e0000000119573309State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, 200050 Shanghai, China
| | - Niraj Aryal
- grid.202665.50000 0001 2188 4229Condensed Matter Physics and Materials Science Division, Brookhaven National Laboratory, Upton, NY 11973-5000 USA
| | - Qiang Li
- grid.202665.50000 0001 2188 4229Condensed Matter Physics and Materials Science Division, Brookhaven National Laboratory, Upton, NY 11973-5000 USA ,grid.36425.360000 0001 2216 9681Department of Physics and Astronomy, Stony Brook University, Stony Brook, NY 11794−3800 USA
| | - Lidong Chen
- grid.9227.e0000000119573309State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, 200050 Shanghai, China ,grid.410726.60000 0004 1797 8419Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, 100049 Beijing, China
| | - Xun Shi
- grid.9227.e0000000119573309State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, 200050 Shanghai, China ,grid.410726.60000 0004 1797 8419Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, 100049 Beijing, China
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