Slip-Line-Guided Growth of Graphene

Premelted-Substrate-Promoted Selective Etching Strategy Realizing CVD Growth of High-Quality Graphene on Dielectric Substrates

Direct chemical vapor deposition growth of high-quality graphene on dielectric substrates is a great challenge. Graphene growth on dielectrics always suffers from the issues of a high nucleation density and poor quality. Herein, a premelted-substrate-promoted selective etching (PSE) strategy was proposed. The premelted substrate can promote charge transfer from the substrate to the nuclei near graphene domains, thus facilitating the reaction between the CO2 etchant and the nuclei. Consequently, the PSE strategy can realize selective etching of nuclei formed near graphene domains to evolve high-quality graphene with a uniform domain size of ∼1 μm and an ID/IG ratio of ∼0.13 on glass fiber, achieving the largest domain size and the lowest defect density in graphene grown on a noncatalytic substrate without metal assistance. The largely improved quality of graphene significantly increases the electrical conductivity by 3 times and improves the working life by 7 times when applied as an electric heater compared with that fabricated without the PSE strategy.

Fluid-Dynamics-Rectified Chemical Vapor Deposition (CVD) Preparing Graphene-Skinned Glass Fiber Fabric and Its Application in Natural Energy Harvest

Graphene chemical vapor deposition (CVD) growth directly on target using substrates presents a significant route toward graphene applications. However, the substrates are usually catalytic-inert and special-shaped; thus, large-scale, high-uniformity, and high-quality graphene growth is challenging. Herein, graphene-skinned glass fiber fabric (GGFF) was developed through graphene CVD growth on glass fiber fabric, a Widely used engineering material. A fluid dynamics rectification strategy was first proposed to synergistically regulate the distribution of carbon species in 3D space and their collisions with hierarchical-structured substrates, through which highly uniform deposition of high-quality graphene on fibers in large-scale 3D-woven fabric was realized. This strategy is universal and applicable to CVD systems using various carbon precursors. GGFF exhibits high electrical conductivity and photothermal conversion capability, based on which a natural energy harvester was first developed. It can harvest both solar and raindrop energy through solar heating and droplet-based electricity generating, presenting promising potentials to alleviate energy burdens.

Harnessing Smectic Ordering for Electric-Field-Driven Guided-Growth of Surface Topography in a Liquid Crystal Polymer

The guided-growth strategy has been widely explored and proved its efficacy in fabricating surface micro/nanostructures in a variety of systems. However, soft materials like polymers are much less investigated partly due to the lack of strong internal driving mechanisms. Herein, the possibility of utilizing liquid crystal (LC) ordering of smectic liquid crystal polymers (LCPs) to induce guided growth of surface topography during the formation of electrohydrodynamic (EHD) patterns is demonstrated. In a two-stage growth, regular stripes are first found to selectively emerge from the homogeneously aligned region of an initially flat LCP film, and then extend neatly along the normal direction of the boundary line between homogeneous and homeotropic alignments. The stripes can maintain their directions for quite a distance before deviating. Coupled with the advanced tools for controlling LC alignment, intricate surface topographies can be produced in LCP films starting from relatively simple designs. The regularity of grown pattern is determined by the LC ordering of the polymer material, and influenced by conditions of EHD growth. The proposed approach provides new opportunities to employ LCPs in optical and electrical applications.

Substrate Screening for the Epitaxial Growth of a Single-Crystal Graphene Wafer

Epitaxial growth of a two-dimensional (2D) single crystal necessitates the symmetry group of the substrate being a subgroup of that of the 2D material. As a consequence of the theory of 2D material epitaxy, high-index surfaces, which own very low symmetry, have been successfully used to grow various 2D single crystals, while the rule of selecting the best substrates for 2D single crystal growth is still absent. Here, extensive density functional theory calculations were conducted to investigate the growth of graphene on abundant high-index Cu substrates. Although step edges are commonly regarded as the most active sites for graphene nucleation, our study reveals that, in some cases, graphene nucleation on terraces is superior than that near a step edge. To achieve parallel alignments of graphene islands, it is essential to either suppress terrace nucleation or ensure consistent orientations templated by both the terrace and step edge. In agreement with most experimental observations, we show that Cu substrates for the growth of single-crystalline graphene include vicinal Cu(111) surfaces, vicinal Cu(110) surfaces with Miller indices of (nn1) (n > 3), and vicinal Cu(100) surfaces with Miller indices of (n11) (n > 3).

Epitaxial Growth of High-Quality Monolayer MoS2 Single Crystals on Low-Symmetry Vicinal Au(101) Facets with Different Miller Indices

Epitaxial growth of wafer-scale monolayer semiconducting transition metal dichalcogenide single crystals is essential for advancing their applications in next-generation transistors and highly integrated circuits. Several efforts have been made for the growth of monolayer MoS₂ single crystals on high-symmetry Au(111) and sapphire substrates, while more prototype growth systems still need to be discovered for clarifying the internal mechanisms. Herein, we report the epitaxial growth of unidirectionally aligned monolayer MoS₂ domains and single-crystal films on low-symmetry Au(101) vicinal facets via a facile chemical vapor deposition method. On-site scanning tunneling microscopy observations reveal the formation of a specific rectangular Moiré pattern along the [101̅] step edge of Au(101) and along its perpendicular direction. The perfect lattice constant matching of MoS₂/Au(101) along the substrate high-symmetry directions (i.e., Au[101̅], Au [010]) as well as the step-edge-guiding effect are proposed to facilitate the robust epitaxy. Multiscale characterizations further confirm the domain-boundary-free feature of the monolayer MoS₂ films merged by unidirectionally aligned monolayer domains. This work hereby puts forward a symmetry mismatched epitaxial system for the direct synthesis of monolayer MoS₂ single crystals, which should deepen our understanding about the epitaxy of 2D layered materials and propel their applications in various fields.

Engineering Grain Boundaries in Two-Dimensional Electronic Materials

Engineering the boundary structures in 2D materials provides an unprecedented opportunity to program the physical properties of the materials with extensive tunability and realize innovative devices with advanced functionalities. However, structural engineering technology is still in its infancy, and creating artificial boundary structures with high reproducibility remains difficult. In this review, various emergent properties of 2D materials with different grain boundaries, and the current techniques to control the structures, are introduced. The remaining challenges for scalable and reproducible structure control and the outlook on the future directions of the related techniques are also discussed.