Scalable Synthesis of Monolayer Hexagonal Boron Nitride on Graphene with Giant Bandgap Renormalization

In Situ Local Band Engineering of Monolayer Graphene Using Triboelectric Plasma

Graphene, a promising material with excellent properties, suffers from a major limitation in electronics due to its zero bandgap. The gas molecules adsorption has proven to be an effective approach for band regulation, which usually requires a harsh environment. Here, O2 - ions produced with triboelectric plasma are used for in situ regulation of graphene, and the switching ratio can reach 1010. The O2 - ions physical adsorption will reduce the Fermi-level (EF) of graphene. As the EF of graphene is lower than the lowest unoccupied molecular orbital (LUMO) level of O2-, the adsorption of O2 - changes from uniform physical adsorption to local chemical adsorption, thereby realizing the semiconductor properties of graphene. The local graphene bandgap is calculated to be 83.4 meV by the variable-temperature experiment. Furthermore, annealing treatment can restore to 1/10 of the initial conductance. The C─O bond formed by O2 - adsorption has low bond energy and is easy to desorb, while the C═O bond formed by adsorption on defects and edges has higher bond energy and is difficult to desorb. The study proposes a simple in situ method to investigate the microscopic process of O2 - adsorption on the graphene surface, demonstrating a new perspective for local energy band engineering of graphene.

Optical Absorption and Photoluminescence of Single-Layer Boron Nitride from a First-Principles Cumulant Approach

The photoluminescence spectrum of a single-layer boron nitride remains elusive, marked by enigmatic satellites that hint at significant but unidentified exciton-phonon coupling. Here, by employing a first-principles approach based on the many-body cumulant expansion of the charge response, we calculate the optical absorption and photoluminescence of a single-layer boron nitride. We identify the specific exciton-phonon scattering channels and unravel their impact on the optical absorption and photoluminescence spectra, thereby providing an interpretation of the experimental features. Finally, we show that, even in a strongly polar material such as h-BN monolayer, the electron-hole interaction responsible for the excitonic effect results in the cancellation of the Frölich interaction at small phonon momenta. This effect is captured only if the invariance of the exciton-phonon matrix elements under unitary transformations in the Bloch function manifold is preserved in the calculation.

Adsorption of NO2, NO, NH3, and CO on Noble Metal (Rh, Pd, Ag, Ir, Pt, Au)-Modified Hexagonal Boron Nitride Monolayers: A First-Principles Study

To investigate the application of modified hexagonal boron nitride (h-BN) in the detection and monitoring of harmful gases (NO2, NO, NH3, and CO), first-principles calculations are applied to study the geometric structure and electronic behavior of the adsorption system. In this paper, the four adsorption sites, namely, B, N, bridge, and hollow sites, are considered to explore the stable adsorption structure of metals (M = Rh, Pd, Ag, Ir, Pt, and Au) on the BN surface. The calculation results demonstrate that the geometric structures of metal at the N-site are relatively stable. Subsequently, the different adsorption structures of NO2, NO, NH3, and CO on M-BN are researched. The electron transfer, charge difference density, and work function of the stable adsorption structure are calculated. The results show that NO2, NO, and CO have the strongest adsorption capacity in the Ir-BN system, with adsorption energies of -2.705, -5.064, and -3.757 eV, respectively. The Pt-BN system has an excellent adsorption performance (-2.251 eV) for NH3. Compared with the M-BN system, the work function of the adsorption system increases after adsorbing NO2, while it decreases after adsorbing NH3. This work shows that h-BN with metal modification is a potential material for online monitoring of harmful gases.

Cathodoluminescence spectroscopy of monolayer hexagonal boron nitride

Cathodoluminescence (CL) spectroscopy is a suitable technique for studying the luminescent properties of optoelectronic materials because CL has no limitation on the excitable bandgap energy and eliminates ambiguous signals due to simple light scattering and resonant Raman scattering potentially involved in the photoluminescence spectra. However, direct CL measurements of atomically thin two-dimensional materials have been difficult due to the small excitation volume that interacts with high-energy electron beams. Herein, distinct CL signals from a monolayer hexagonal BN (hBN), namely mBN, epitaxial film grown on a graphite substrate are shown by using a CL system capable of large-area and surface-sensitive excitation. Spatially resolved CL spectra at 13 K exhibited a predominant 5.5-eV emission band, which has been ascribed to originate from multilayered aggregates of hBN, markedly at thicker areas formed on the step edges of the substrate. Conversely, a faint peak at 6.04 ± 0.01 eV was routinely observed from atomically flat areas, which is assigned as being due to the recombination of phonon-assisted direct excitons of mBN. The CL results support the transition from indirect bandgap in bulk hBN to direct bandgap in mBN. The results also encourage one to elucidate emission properties of other low-dimensional materials by using the present CL configuration.

Interfacial engineering of a vertically stacked graphene/h-BN heterostructure as an efficient electrocatalyst for hydrogen peroxide synthesis

Recently, it was reported that an in-plane graphene (G)/hexagonal boron nitride (h-BN) (G/h-BN) heterostructure provided the catalytic activity for H2O2 synthesis by the 2 e- oxygen reduction reaction (ORR). However, there are few reports on the vertically stacked G/h-BN heterostructure, which refers to the stacking of graphene domains on the surface of h-BN. Herein, a simulated chemical vapor deposition method is proposed for fabricating a heterostructure of abundant vertically stacked G/h-BN by in situ growing graphene quantum dots (GQDs) on porous h-BN sheets. The performance of our vertically stacked heterostructure catalyst is superior to that of reported carbon-based electrocatalysts under an alkaline environment, with an H2O2 selectivity of 90-99% in a wide potential range (0.35 V-0.7 V vs. RHE), over 90% faradaic efficiency, and high mass activity of 1167 mmol gcatalyst-1 h-1. The experimental results and density functional theory (DFT) simulation verified that the vertically stacked heterostructure exhibits an excellent catalytic performance for the 2 e- ORR, and the edge B atoms in the B-centered AB stacking model are the most active catalytic sites. This research adequately demonstrates the promising catalytic activity of the vertically stacked G/h-BN heterostructure and provides a facile route for fabricating other vertically stacked heterostructures.

Hexagonal Boron Nitride for Photonic Device Applications: A Review

Hexagonal boron nitride (hBN) has emerged as a key two-dimensional material. Its importance is linked to that of graphene because it provides an ideal substrate for graphene with minimal lattice mismatch and maintains its high carrier mobility. Moreover, hBN has unique properties in the deep ultraviolet (DUV) and infrared (IR) wavelength bands owing to its indirect bandgap structure and hyperbolic phonon polaritons (HPPs). This review examines the physical properties and applications of hBN-based photonic devices that operate in these bands. A brief background on BN is provided, and the theoretical background of the intrinsic nature of the indirect bandgap structure and HPPs is discussed. Subsequently, the development of DUV-based light-emitting diodes and photodetectors based on hBN's bandgap in the DUV wavelength band is reviewed. Thereafter, IR absorbers/emitters, hyperlenses, and surface-enhanced IR absorption microscopy applications using HPPs in the IR wavelength band are examined. Finally, future challenges related to hBN fabrication using chemical vapor deposition and techniques for transferring hBN to a substrate are discussed. Emerging techniques to control HPPs are also examined. This review is intended to assist researchers in both industry and academia in the design and development of unique hBN-based photonic devices operating in the DUV and IR wavelength regions.

Polytypes of sp2-Bonded Boron Nitride

The sp2-bonded layered compound boron nitride (BN) exists in more than a handful of different polytypes (i.e., different layer stacking sequences) with similar formation energies, which makes obtaining a pure monotype of single crystals extremely tricky. The co-existence of polytypes in a similar crystal leads to the formation of many interfaces and structural defects having a deleterious influence on the internal quantum efficiency of the light emission and on charge carrier mobility. However, despite this, lasing operation was reported at 215 nm, which has shifted interest in sp2- bonded BN from basic science laboratories to optoelectronic and electrical device applications. Here, we describe some of the known physical properties of a variety of BN polytypes and their performances for deep ultraviolet emission in the specific case of second harmonic generation of light.