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Mao X, Yang Y, Yang L, Qian H, Li W, Zhao W, Deng S, Jin S, Jiang L, Liu C, Li W, Yi M, Deng R, Zhu J. Orthogonal printing of uniform nanocomposite monolayer and oriented organic semiconductor crystals for high-performance nano-crystal floating gate memory. J Colloid Interface Sci 2024; 668:232-242. [PMID: 38677212 DOI: 10.1016/j.jcis.2024.04.160] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/06/2024] [Revised: 04/19/2024] [Accepted: 04/22/2024] [Indexed: 04/29/2024]
Abstract
Inkjet printing is of great interest in the preparation of optoelectronic and microelectronic devices due to its low cost, low process temperature, versatile material compatibility, and ability to precisely manufacture multi-layer devices on demand. However, interlayer solvent erosion is a typical problem that limits the printing of organic semiconductor devices with multi-layer structures. In this study, we proposed a solution to address this erosion problem by designing polystyrene-block-poly(4-vinyl pyridine)-grafted Au nanoparticles (Au@PS-b-P4VP NPs). With a colloidal ink containing the Au@PS-b-P4VP NPs, we obtained a uniform monolayer of Au nano-crystal floating gates (NCFGs) embedded in the PS-b-P4VP tunneling dielectric (TD) layer using direct-ink-writing (DIW). Significantly, PS-b-P4VP has high erosion resistance against the semiconductor ink solvent, which enables multi-layer printing. An active layer of semiconductor crystals with high crystallinity and well-orientation was obtained by DIW. Moreover, we developed a strategy to improve the quality of the TD/semiconductor interface by introducing a polystyrene intermediate layer. We show that the NCFG memory devices exhibit a low threshold voltage (<3 V), large memory window (66 V), stable endurance (>100 cycles), and long-term retention (>10 years). This study provides universal guidance for printing functional coatings and multi-layer devices.
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Affiliation(s)
- Xi Mao
- Key Laboratory of Material Chemistry for Energy Conversion and Storage of Ministry of Education (HUST), and State Key Laboratory of Materials Processing and Die & Mold Technology, School of Chemistry and Chemical Engineering, Huazhong University of Science and Technology (HUST), Wuhan 430074, China
| | - Yonghao Yang
- Key Laboratory for Organic Electronics and Information Displays, Institute of Advanced Materials (IAM) Nanjing University of Posts & Telecommunications (NUPT), Nanjing 210023, China
| | - Lisong Yang
- Department of Chemistry, Durham University, Stockholm Road, Durham DH1 3LE, UK
| | - Haowen Qian
- Key Laboratory for Organic Electronics and Information Displays, Institute of Advanced Materials (IAM) Nanjing University of Posts & Telecommunications (NUPT), Nanjing 210023, China
| | - Wang Li
- Key Laboratory of Material Chemistry for Energy Conversion and Storage of Ministry of Education (HUST), and State Key Laboratory of Materials Processing and Die & Mold Technology, School of Chemistry and Chemical Engineering, Huazhong University of Science and Technology (HUST), Wuhan 430074, China
| | - Wenqi Zhao
- Key Laboratory for Organic Electronics and Information Displays, Institute of Advanced Materials (IAM) Nanjing University of Posts & Telecommunications (NUPT), Nanjing 210023, China
| | - Shuai Deng
- Key Laboratory of Material Chemistry for Energy Conversion and Storage of Ministry of Education (HUST), and State Key Laboratory of Materials Processing and Die & Mold Technology, School of Chemistry and Chemical Engineering, Huazhong University of Science and Technology (HUST), Wuhan 430074, China
| | - Shaohong Jin
- Key Laboratory of Material Chemistry for Energy Conversion and Storage of Ministry of Education (HUST), and State Key Laboratory of Materials Processing and Die & Mold Technology, School of Chemistry and Chemical Engineering, Huazhong University of Science and Technology (HUST), Wuhan 430074, China
| | - Liangzhu Jiang
- Key Laboratory of Material Chemistry for Energy Conversion and Storage of Ministry of Education (HUST), and State Key Laboratory of Materials Processing and Die & Mold Technology, School of Chemistry and Chemical Engineering, Huazhong University of Science and Technology (HUST), Wuhan 430074, China
| | - Changxu Liu
- Key Laboratory of Material Chemistry for Energy Conversion and Storage of Ministry of Education (HUST), and State Key Laboratory of Materials Processing and Die & Mold Technology, School of Chemistry and Chemical Engineering, Huazhong University of Science and Technology (HUST), Wuhan 430074, China
| | - Wen Li
- Key Laboratory for Organic Electronics and Information Displays, Institute of Advanced Materials (IAM) Nanjing University of Posts & Telecommunications (NUPT), Nanjing 210023, China.
| | - Mingdong Yi
- Key Laboratory for Organic Electronics and Information Displays, Institute of Advanced Materials (IAM) Nanjing University of Posts & Telecommunications (NUPT), Nanjing 210023, China
| | - Renhua Deng
- Key Laboratory of Material Chemistry for Energy Conversion and Storage of Ministry of Education (HUST), and State Key Laboratory of Materials Processing and Die & Mold Technology, School of Chemistry and Chemical Engineering, Huazhong University of Science and Technology (HUST), Wuhan 430074, China.
| | - Jintao Zhu
- Key Laboratory of Material Chemistry for Energy Conversion and Storage of Ministry of Education (HUST), and State Key Laboratory of Materials Processing and Die & Mold Technology, School of Chemistry and Chemical Engineering, Huazhong University of Science and Technology (HUST), Wuhan 430074, China.
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Samadder P, Naim K, Sahoo SC, Neelakandan PP. Surface coating induced room-temperature phosphorescence in flexible organic single crystals. Chem Sci 2024; 15:9258-9265. [PMID: 38903241 PMCID: PMC11186325 DOI: 10.1039/d4sc01708k] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/13/2024] [Accepted: 05/16/2024] [Indexed: 06/22/2024] Open
Abstract
Materials exhibiting room temperature phosphorescence (RTP) are in high demand for signage, information encryption, sensing, and biological imaging. Due to weak spin-orbit coupling and other non-radiative processes that effectively quench the triplet excited states, RTP is sparsely observed in organic materials. Although the incorporation of a heavy atom through covalent or non-covalent modification circumvents these drawbacks, heavy-atom-containing materials are undesirable because of their deleterious side effects. Here, we designed and synthesized a new naphthalidenimine-boron complex as a coating material for the single crystals of 4,4'-dimethoxybenzophenone. The coated surface was observed to exhibit yellowish-green phosphorescence with ms lifetimes at ambient conditions through Förster resonance energy transfer (FRET). Importantly, the mechanical flexibility of the single crystals was observed to be retained after coating. The fluorescence-phosphorescence dual emission was utilised for colour-tunable optical waveguiding and anti-counterfeiting applications. As organic single crystals that can sustain mechanical deformations are emerging as the next-generation materials for electronic device fabrication, the flexible RTP organic crystals showing colour-tuneable optical waveguiding could be omnipotent in electronics.
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Affiliation(s)
- Prodipta Samadder
- Institute of Nano Science and Technology (INST) Knowledge City, Sector 81 Mohali 140306 India
| | - Khalid Naim
- Institute of Nano Science and Technology (INST) Knowledge City, Sector 81 Mohali 140306 India
| | | | - Prakash P Neelakandan
- Institute of Nano Science and Technology (INST) Knowledge City, Sector 81 Mohali 140306 India
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Huang C, Li C, Geng B, Ding X, Zhang J, Tang W, Duan S, Ren X, Hu W. Tuning Electrode Work Function and Surface Energy for Solution Shearing High-Performance Organic Field-Effect Transistors. ACS APPLIED MATERIALS & INTERFACES 2024; 16:30228-30238. [PMID: 38810990 DOI: 10.1021/acsami.4c02012] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/31/2024]
Abstract
A bottom-contact organic field-effect transistor (OFET) is easily adaptable to the standard lithography process because the contact electrodes are deposited before the organic semiconductor (OSC). However, the low surface energy of bare electrodes limits utilizing solution-processed single-crystal OSCs. Additionally, the bare electrode usually leads to a significant charge injection barrier, owing to its relatively low work function (WF). Here, we simultaneously improved the surface energy and WF of gold electrodes by conducting oxygen plasma treatment to achieve high-performance OFET based on solution-processed organic single crystals. We cultivated a thin layer of gold oxide on Au electrodes to increase the WF by ∼0.7 eV. The surface energy of Au electrodes was enhanced to the same as AlOx dielectric surface, enabling the seamless growth of large-area C8-BTBT (2,7-dioctyl[1]benzothieno[3,2-b][1]benzothiophene) organic single-crystal thin films via solution shearing. This technique facilitates the production of high-performance OFETs with the highest carrier mobility of 6.7 cm2 V-1 s-1 and sharp switching characterized by a subthreshold swing of 63.6 mV dec-1. The bottom-contact OFETs exhibited a lower contact resistance of 1.19 kΩ cm than its F4-TCNQ-doped top-contact control device. This method offers a straightforward and effective strategy for producing high-quality single-crystal OFETs, which are potentially suitable for commercial applications.
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Affiliation(s)
- Congcong Huang
- Key Laboratory of Organic Integrated Circuits, Ministry of Education & Tianjin Key Laboratory of Molecular Optoelectronic Sciences, Department of Chemistry, School of Science, Tianjin University, Collaborative Innovation Center of Chemical Science and Engineering (Tianjin), Tianjin 300072, China
| | - Chengtai Li
- Key Laboratory of Organic Integrated Circuits, Ministry of Education & Tianjin Key Laboratory of Molecular Optoelectronic Sciences, Department of Chemistry, School of Science, Tianjin University, Collaborative Innovation Center of Chemical Science and Engineering (Tianjin), Tianjin 300072, China
| | - Bowen Geng
- Key Laboratory of Organic Integrated Circuits, Ministry of Education & Tianjin Key Laboratory of Molecular Optoelectronic Sciences, Department of Chemistry, School of Science, Tianjin University, Collaborative Innovation Center of Chemical Science and Engineering (Tianjin), Tianjin 300072, China
| | - Xiaohai Ding
- Key Laboratory of Organic Integrated Circuits, Ministry of Education & Tianjin Key Laboratory of Molecular Optoelectronic Sciences, Department of Chemistry, School of Science, Tianjin University, Collaborative Innovation Center of Chemical Science and Engineering (Tianjin), Tianjin 300072, China
| | - Jing Zhang
- Department of Chemical and Biomolecular Engineering, National University of Singapore, Singapore 117585, Singapore
| | - Wei Tang
- School of Electronic Information and Electrical Engineering Shanghai Jiao Tong University, Shanghai 200240, China
| | - Shuming Duan
- Joint School of National University of Singapore and Tianjin University, International Campus of Tianjin University, Fuzhou 350207, China
| | - Xiaochen Ren
- Key Laboratory of Organic Integrated Circuits, Ministry of Education & Tianjin Key Laboratory of Molecular Optoelectronic Sciences, Department of Chemistry, School of Science, Tianjin University, Collaborative Innovation Center of Chemical Science and Engineering (Tianjin), Tianjin 300072, China
| | - Wenping Hu
- Key Laboratory of Organic Integrated Circuits, Ministry of Education & Tianjin Key Laboratory of Molecular Optoelectronic Sciences, Department of Chemistry, School of Science, Tianjin University, Collaborative Innovation Center of Chemical Science and Engineering (Tianjin), Tianjin 300072, China
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Sheng F, Deng W, Ren X, Liu X, Meng X, Shi J, Grigorian S, Jie J, Zhang X. Breaking Fundamental Limitation of Flow-Induced Anisotropic Growth for Large-Scale and Fast Printing of Organic Single-Crystal Films. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2401822. [PMID: 38555558 DOI: 10.1002/adma.202401822] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/02/2024] [Revised: 03/19/2024] [Indexed: 04/02/2024]
Abstract
Advanced organic electronic technologies have put forward a pressing demand for cost-effective and high-throughput fabrication of organic single-crystal films (OSCFs). However, solution-printed OSCFs are typically plagued by the existence of abundant structural defects, which pose a formidable challenge to achieving large-scale and high-performance organic electronics. Here, it is elucidated that these structural defects are mainly originated from printing flow-induced anisotropic growth, an important factor that is overlooked for too long. In light of this, a surfactant-additive printing method is proposed to effectively overcome the anisotropic growth, enabling the deposition of uniform OSCFs over the wafer scale at a high speed of 1.2 mm s-1 at room temperature. The resulting OSCF exhibits appealing performance with a high average mobility up to 10.7 cm2 V-1 s-1, which is one of the highest values for flexible organic field-effect transistor arrays. Moreover, large-scale OSCF-based flexible logic circuits, which can be bent without degradation to a radius as small as 4.0 mm and over 1000 cycles are realized. The work provides profound insights into breaking the limitation of flow-induced anisotropic growth and opens new avenues for printing large-scale organic single-crystal electronics.
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Affiliation(s)
- Fangming Sheng
- Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, Suzhou, Jiangsu, 215123, China
| | - Wei Deng
- Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, Suzhou, Jiangsu, 215123, China
| | - Xiaobin Ren
- Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, Suzhou, Jiangsu, 215123, China
| | - Xinyue Liu
- Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, Suzhou, Jiangsu, 215123, China
| | - Xinghan Meng
- Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, Suzhou, Jiangsu, 215123, China
| | - Jialin Shi
- Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, Suzhou, Jiangsu, 215123, China
| | - Souren Grigorian
- Department of Physics, University of Siegen, 57072, Siegen, Germany
| | - Jiansheng Jie
- Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, Suzhou, Jiangsu, 215123, China
- Macao Institute of Materials Science and Engineering (MIMSE), MUST-SUDA Joint Research Center for Advanced Functional Materials, Macau University of Science and Technology, Taipa, Macau SAR, 999078, China
| | - Xiujuan Zhang
- Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, Suzhou, Jiangsu, 215123, China
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Wei C, Li L, Zheng Y, Wang L, Ma J, Xu M, Lin J, Xie L, Naumov P, Ding X, Feng Q, Huang W. Flexible molecular crystals for optoelectronic applications. Chem Soc Rev 2024; 53:3687-3713. [PMID: 38411997 DOI: 10.1039/d3cs00116d] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 02/28/2024]
Abstract
The cornerstones of the advancement of flexible optoelectronics are the design, preparation, and utilization of novel materials with favorable mechanical and advanced optoelectronic properties. Molecular crystalline materials have emerged as a class of underexplored yet promising materials due to the reduced grain boundaries and defects anticipated to provide enhanced photoelectric characteristics. An inherent drawback that has precluded wider implementation of molecular crystals thus far, however, has been their brittleness, which renders them incapable of ensuring mechanical compliance required for even simple elastic or plastic deformation of the device. It is perplexing that despite a plethora of reports that have in the meantime become available underpinning the flexibility of molecular crystals, the "discovery" of elastically or plastically deformable crystals remains limited to cases of serendipitous and laborious trial-and-error approaches, a situation that calls for a systematic and thorough assessment of these properties and their correlation with the structure. This review provides a comprehensive and concise overview of the current understanding of the origins of crystal flexibility, the working mechanisms of deformations such as plastic and elastic bending behaviors, and insights into the examples of flexible molecular crystals, specifically concerning photoelectronic changes that occur in deformed crystals. We hope this summary will provide a reference for future experimental and computational efforts with flexible molecular crystals aimed towards improving their mechanical behavior and optoelectronic properties, ultimately intending to advance the flexible optoelectronic technology.
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Affiliation(s)
- Chuanxin Wei
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications, 9 Wenyuan Road, Nanjing 210023, China.
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing 211816, China.
| | - Liang Li
- Smart Materials Lab, New York University Abu Dhabi, PO Box 129188, Abu Dhabi, United Arab Emirates.
| | - Yingying Zheng
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing 211816, China.
| | - Lizhi Wang
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing 211816, China.
| | - Jingyao Ma
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications, 9 Wenyuan Road, Nanjing 210023, China.
| | - Man Xu
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications, 9 Wenyuan Road, Nanjing 210023, China.
| | - Jinyi Lin
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing 211816, China.
| | - Linghai Xie
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications, 9 Wenyuan Road, Nanjing 210023, China.
- School of Flexible Electronics (SoFE) and Henan Institute of Flexible Electronics (HIFE), Henan University, 379 Mingli Road, Zhengzhou 450046, China
| | - Panče Naumov
- Smart Materials Lab, New York University Abu Dhabi, PO Box 129188, Abu Dhabi, United Arab Emirates.
- Center for Smart Engineering Materials, New York University Abu Dhabi, PO Box 129188, Abu Dhabi, United Arab Emirates
- Research Center for Environment and Materials, Macedonian Academy of Sciences and Arts, Bul. Krste Misirkov 2, Skopje MK-1000, Macedonia
- Molecular Design Institute, Department of Chemistry, New York University, 100 Washington Square East, New York, NY 10003, USA
| | - Xuehua Ding
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing 211816, China.
| | - Quanyou Feng
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications, 9 Wenyuan Road, Nanjing 210023, China.
| | - Wei Huang
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications, 9 Wenyuan Road, Nanjing 210023, China.
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing 211816, China.
- School of Flexible Electronics (SoFE) and Henan Institute of Flexible Electronics (HIFE), Henan University, 379 Mingli Road, Zhengzhou 450046, China
- Frontiers Science Center for Flexible Electronics (FSCFE), Shaanxi Institute of Flexible Electronics (SIFE), MIIT Key Laboratory of Flexible Electronics (KLoFE), Northwestern Polytechnical University (NPU), 127 West Youyi Road, Xi'an 710072, China
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Qin GY, Sun XQ, Wang R, Guo JF, Fan JX, Li H, Zou LY, Ren AM. In-depth theoretical analysis of the influence of an external electric field on charge transport parameters. Chem Sci 2024; 15:4403-4415. [PMID: 38516067 PMCID: PMC10952071 DOI: 10.1039/d3sc06728a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/14/2023] [Accepted: 02/02/2024] [Indexed: 03/23/2024] Open
Abstract
It is important to develop materials with environmental stability and long device shelf life for use in organic field-effect transistors (OFETs). The microscopic, molecular-level nature of the organic layer in OFETs is not yet well understood. The stability of geometric and electronic structures and the regulation of the external electric field (EEF) on the charge transport properties of four typical homogeneous organic semiconductors (OSCs) were investigated by density functional theory (DFT). The results showed that under the EEF, the structural changes in single-bond linked oligomers were more sensitive and complex than those of condensed molecules, and there were non-monotonic changes in their reorganization energy (λ) during charge transport under an EEF consisting of decreases and then increases (Series D). The change in λ under an EEF can be preliminarily and qualitatively determined by the change in the frontier molecular orbitals (FMOs) - the number of C-atoms with nonbonding characteristics. For single-bonded molecules, the transfer integral is basically unchanged under a low EEF, but it will greatly change at a high EEF. Because the structure and properties of the molecule will greatly change under different EEFs, the effect of an EEF should be fully considered when determining the intrinsic mobility of OSCs, which could cause a deviation 0.3-20 times in mobility. According to detailed calculations, one heterogeneous oligomer, TH-BTz, was designed. Its λ can be greatly reduced under an EEF, and the change in the energy level of FMOs can be adjusted to different degrees. This study provides a reasonable idea for verification of the experimental mobility value and also provides guidance for the directional design of stable high-mobility OSCs.
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Affiliation(s)
- Gui-Ya Qin
- College of Chemistry, Jilin University Changchun 130023 China
| | - Xiao-Qi Sun
- School of Physics, Northeast Normal University Changchun 130024 China
| | - Rui Wang
- College of Chemistry, Jilin University Changchun 130023 China
| | - Jing-Fu Guo
- School of Physics, Northeast Normal University Changchun 130024 China
| | - Jian-Xun Fan
- College of Chemistry and Materials Science, Weinan Normal University Weinan 714000 China
| | - Hui Li
- College of Chemistry, Jilin University Changchun 130023 China
| | - Lu-Yi Zou
- College of Chemistry, Jilin University Changchun 130023 China
| | - Ai-Min Ren
- College of Chemistry, Jilin University Changchun 130023 China
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Zhao X, Zhang H, Zhang J, Liu J, Lei M, Jiang L. Organic Semiconductor Single Crystal Arrays: Preparation and Applications. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2023; 10:e2300483. [PMID: 36967565 DOI: 10.1002/advs.202300483] [Citation(s) in RCA: 4] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/20/2023] [Revised: 02/20/2023] [Indexed: 05/27/2023]
Abstract
The study of organic semiconductor single crystal (OSSC) arrays has recently attracted considerable interest given their potential applications in flexible displays, smart wearable devices, biochemical sensors, etc. Patterning of OSSCs is the prerequisite for the realization of organic integrated circuits. Patterned OSSCs can not only decrease the crosstalk between adjacent organic field-effect transistors (OFETs), but also can be conveniently integrated with other device elements which facilitate circuits application. Tremendous efforts have been devoted in the controllable preparation of OSSC arrays, and great progress has been achieved. In this review, the general strategies for patterning OSSCs are summarized, along with the discussion of the advantages and limitations of different patterning methods. Given the identical thickness of monolayer molecular crystals (MMCs) which is beneficial to achieve super uniformity of OSSC arrays and devices, patterning of MMCs is also emphasized. Then, OFET performance is summarized with comparison of the mobility and coefficient of variation based on the OSSC arrays prepared by different methods. Furthermore, advances of OSSC array-based circuits and flexible devices of different functions are highlighted. Finally, the challenges that need to be tackled in the future are presented.
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Affiliation(s)
- Xiaotong Zhao
- State Key Laboratory of Information Photonics and Optical Communications & School of Integrated Circuits, Beijing University of Posts and Telecommunications, Beijing, 100876, China
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing, 100190, China
| | - Hantang Zhang
- College of Chemistry and Material Science, Shandong Agricultural University, Taian, 271018, China
| | - Jing Zhang
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing, 100190, China
- School of Chemistry and Materials Science of Shanxi Normal University & Key Laboratory of Magnetic Molecules and Magnetic Information Materials of Ministry of Education, Taiyuan, 031000, China
| | - Jie Liu
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing, 100190, China
| | - Ming Lei
- State Key Laboratory of Information Photonics and Optical Communications & School of Integrated Circuits, Beijing University of Posts and Telecommunications, Beijing, 100876, China
| | - Lang Jiang
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing, 100190, China
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