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For: Zha J, Shi S, Chaturvedi A, Huang H, Yang P, Yao Y, Li S, Xia Y, Zhang Z, Wang W, Wang H, Wang S, Yuan Z, Yang Z, He Q, Tai H, Teo EHT, Yu H, Ho JC, Wang Z, Zhang H, Tan C. Electronic/Optoelectronic Memory Device Enabled by Tellurium-based 2D van der Waals Heterostructure for in-Sensor Reservoir Computing at the Optical Communication Band. Adv Mater 2023;35:e2211598. [PMID: 36857506 DOI: 10.1002/adma.202211598] [Citation(s) in RCA: 32] [Impact Index Per Article: 16.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/12/2022] [Revised: 02/16/2023] [Indexed: 05/19/2023]

For:	Zha J, Shi S, Chaturvedi A, Huang H, Yang P, Yao Y, Li S, Xia Y, Zhang Z, Wang W, Wang H, Wang S, Yuan Z, Yang Z, He Q, Tai H, Teo EHT, Yu H, Ho JC, Wang Z, Zhang H, Tan C. Electronic/Optoelectronic Memory Device Enabled by Tellurium-based 2D van der Waals Heterostructure for in-Sensor Reservoir Computing at the Optical Communication Band. Adv Mater 2023;35:e2211598. [PMID: 36857506 DOI: 10.1002/adma.202211598] [Citation(s) in RCA: 32] [Impact Index Per Article: 16.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/12/2022] [Revised: 02/16/2023] [Indexed: 05/19/2023]

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