1
|
Hu J, Gao WC, Zhao YD, Fan B, Sun X, Qiao J, Guan YS, Li Q. Broadband-Responsive Rubbery Stretchable Vertical-Structured Photodetectors Based on Rubbery Stretchable Transparent Conductors. ACS NANO 2025; 19:18347-18356. [PMID: 40326789 DOI: 10.1021/acsnano.5c01015] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/07/2025]
Abstract
A rubbery stretchable conductor with high conductivity and transparency is crucial for the development of rubbery stretchable vertical-structured photodetectors. However, the development of such a rubbery conductor is still nascent. Here, we report the scalable manufacturing of rubbery stretchable transparent conductors (RSTCs) and the development of a rubbery stretchable vertical-structured photodetector (RSVPD). The RSTC is fabricated into a specialized micromesh structure by utilizing a close-packed monolayer of polystyrene microspheres as a mask. The micromesh structure not only enhances the conductor's stretchability and transparency but also maintains its conductivity, making it ideal for various applications in stretchable electronics. The RSTCs are used to construct RSVPDs that have high response over a broad spectrum, and their electrical performances can be retained even when subjected to mechanical strains of up to 50%. Furthermore, a stretchable imager based on RSVPD was developed to detect the multipoint light distribution. Lastly, a photoplethysmography (PPG) sensor was also developed for real-time health monitoring.
Collapse
Affiliation(s)
- Junmei Hu
- Institute of Advanced Materials and School of Chemistry and Chemical Engineering,Southeast University, Nanjing 211189, China
| | - Wei-Chen Gao
- Institute of Advanced Materials and School of Chemistry and Chemical Engineering,Southeast University, Nanjing 211189, China
| | - Yu-Dong Zhao
- Institute of Advanced Materials and School of Chemistry and Chemical Engineering,Southeast University, Nanjing 211189, China
| | - Ben Fan
- Institute of Advanced Materials and School of Chemistry and Chemical Engineering,Southeast University, Nanjing 211189, China
| | - Xiang Sun
- Institute of Advanced Materials and School of Chemistry and Chemical Engineering,Southeast University, Nanjing 211189, China
| | - Jing Qiao
- Institute of Advanced Materials and School of Chemistry and Chemical Engineering,Southeast University, Nanjing 211189, China
| | - Ying-Shi Guan
- Institute of Advanced Materials and School of Chemistry and Chemical Engineering,Southeast University, Nanjing 211189, China
| | - Quan Li
- Institute of Advanced Materials and School of Chemistry and Chemical Engineering,Southeast University, Nanjing 211189, China
- Materials Science Graduate Program, Kent State University, Kent, Ohio 44242, United States
| |
Collapse
|
2
|
Li KH, Zhang XY, Hu LY, Su D, Liu ZG, Jin NX, Yang ZR, Li X, Bi XY, Wu JY, Song YJ, Zhang T. Wavelength-Controlled Triple-Mode Photoconductance-Polarity-Switching Field Effect Transistor for Secure Time-Variable Encrypted Optical Communication. ACS NANO 2025; 19:18607-18619. [PMID: 40349351 DOI: 10.1021/acsnano.5c02801] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/14/2025]
Abstract
The controllable polarity switch between positive photoconductance (PPC) and negative photoconductance (NPC) in a photodetector is essential for the realization of versatile, innovative applications. Incorporating polarity-switching photoconductance with other response states, yet still posing challenges, allows for encoding multidimensional distinguishable optical information within a single device, which holds great potential for broadening application scope. Herein, three wavelength-controlled photoresponse modes are present in MoS2-based field effect transistor with lightly doped Si substrate by combining positive/negative photocurrent polarities with slow/fast response speeds. Specifically, a slow PPC response at 520 nm, along with fast bipolar infrared responses (NPC at 980 nm, PPC at 1310 nm), is integrated within a single MoS2 device. The opposite sub-bandgap infrared photoresponses are ascribed to the synergism of the bolometric effect and interfacial photogating, influenced by electrons photogenerated in Si. Based on the triple polarity-switching characteristic of the MoS2 device, the triple-channel real-time secure optical communication system with time-variable encryption algorithms is demonstrated, exponentially increasing the difficulty of brute-force cracking by synchronizing the time-variable key channel with two information channels. This work not only enhances the understanding of sub-bandgap photoresponse mechanisms in 2D material photodetectors but also offers promising avenues for the development of optoelectronics-assisted wireless communication technologies.
Collapse
Affiliation(s)
- Ke-Han Li
- Joint International Research Laboratory of Information Display and Visualization, School of Electronic Science and Engineering, Southeast University, Nanjing 210096, China
| | - Xiao-Yang Zhang
- Joint International Research Laboratory of Information Display and Visualization, School of Electronic Science and Engineering, Southeast University, Nanjing 210096, China
- Key Laboratory of Micro-Inertial Instrument and Advanced Navigation Technology, Ministry of Education, School of Instrument Science and Engineering, Southeast University, Nanjing 210096, China
- Suzhou Key Laboratory of Metal Nano-Optoelectronic Technology, Southeast University, Suzhou Campus, Suzhou 215123, China
| | - Li-Yu Hu
- Joint International Research Laboratory of Information Display and Visualization, School of Electronic Science and Engineering, Southeast University, Nanjing 210096, China
| | - Dan Su
- Joint International Research Laboratory of Information Display and Visualization, School of Electronic Science and Engineering, Southeast University, Nanjing 210096, China
| | - Zhao-Guo Liu
- Joint International Research Laboratory of Information Display and Visualization, School of Electronic Science and Engineering, Southeast University, Nanjing 210096, China
| | - Nan-Xi Jin
- Joint International Research Laboratory of Information Display and Visualization, School of Electronic Science and Engineering, Southeast University, Nanjing 210096, China
| | - Zong-Ru Yang
- Joint International Research Laboratory of Information Display and Visualization, School of Electronic Science and Engineering, Southeast University, Nanjing 210096, China
| | - Xuan Li
- Joint International Research Laboratory of Information Display and Visualization, School of Electronic Science and Engineering, Southeast University, Nanjing 210096, China
| | - Xiao-Ying Bi
- Joint International Research Laboratory of Information Display and Visualization, School of Electronic Science and Engineering, Southeast University, Nanjing 210096, China
| | - Jing-Yuan Wu
- Department of Optoelectronic Science and Engineering, College of Science, Donghua University, Shanghai 201620, China
| | - Yuan-Jun Song
- Joint International Research Laboratory of Information Display and Visualization, School of Electronic Science and Engineering, Southeast University, Nanjing 210096, China
| | - Tong Zhang
- Joint International Research Laboratory of Information Display and Visualization, School of Electronic Science and Engineering, Southeast University, Nanjing 210096, China
- Key Laboratory of Micro-Inertial Instrument and Advanced Navigation Technology, Ministry of Education, School of Instrument Science and Engineering, Southeast University, Nanjing 210096, China
- Suzhou Key Laboratory of Metal Nano-Optoelectronic Technology, Southeast University, Suzhou Campus, Suzhou 215123, China
| |
Collapse
|
3
|
Xing R, Zhang X, Fan X, Xie R, Wu L, Fang X. Coupling Strategies of Multi-Physical Fields in 2D Materials-Based Photodetectors. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2025; 37:e2501833. [PMID: 40059460 DOI: 10.1002/adma.202501833] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/25/2025] [Revised: 02/18/2025] [Indexed: 04/24/2025]
Abstract
2D materials possess exceptional carrier transport properties and mechanical stability despite their ultrathin nature. In this context, the coupling between polarization fields and photoelectric fields has been proposed to modulate the physical properties of 2D materials, including energy band structure, carrier mobility, as well as the dynamic processes of photoinduced carriers. These strategies have led to significant improvements in the performance, functionality, and integration density of 2D materials -based photodetectors. The present review introduces the coupling of photoelectric field with four fundamental polarization fields, delivered from dielectric, piezoelectric, pyroelectric, and ferroelectric effects, focusing on their synergistic coupling mechanisms, distinctive properties, and technological merits in advanced photodetection applications. More importantly, it sheds light on the new path of material synthesis and novel structure design to improve the efficiency of the coupling strategies in photodetectors. Then, research advances on the synergy of multi-polarization effects and photoelectric effect in the domain of bionic photodetectors are highlighted. Finally, the review outlines the future research perspectives of coupling strategies in 2D materials-based photodetectors and proposes potential solutions to address the challenges issues of this area. This comprehensive overview will guide futural fundamental and applied research that capitalizes on coupling strategies for sensitive and intelligent photodetection.
Collapse
Affiliation(s)
- Ruofei Xing
- Department of Materials Science and State Key Laboratory of Molecular Engineering of Polymers, Fudan University, Shanghai, 200438, P. R. China
| | - Xinglong Zhang
- Department of Materials Science and State Key Laboratory of Molecular Engineering of Polymers, Fudan University, Shanghai, 200438, P. R. China
| | - Xueshuo Fan
- Department of Materials Science and State Key Laboratory of Molecular Engineering of Polymers, Fudan University, Shanghai, 200438, P. R. China
| | - Ranran Xie
- Quantum Science Center of Guangdong-Hong Kong-Macao Greater Bay Area, Shenzhen, 518045, P. R. China
| | - Limin Wu
- College of Chemistry and Chemical Engineering, Inner Mongolia University, Hohhot, 010021, P. R. China
| | - Xiaosheng Fang
- Department of Materials Science and State Key Laboratory of Molecular Engineering of Polymers, Fudan University, Shanghai, 200438, P. R. China
| |
Collapse
|
4
|
Li J, Chen Q, Wang Q, Hao D, Zhang X, Chen X, Huang Q, Li L, Ma T, Jia B, Chen Z. Junction Field-Effect Transistors Based on MoSe 2/WSe 2 Heterostructures for High-Performance Photodetection. ACS APPLIED MATERIALS & INTERFACES 2025; 17:16970-16977. [PMID: 40063735 DOI: 10.1021/acsami.4c15167] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 03/21/2025]
Abstract
Two-dimensional (2D) materials show great potential in creating high-performance ultracompact photodetectors. Existing 2D photodetectors are usually designed based on a photogating effect or photovoltaic effect. However, achieving a balance between photodetectivity and photoresponsivity presents a significant challenge due to increased dark currents at trap level recombination or the lack of a gain mechanism. Herein, we rationally design a gate-tunable junction field-effect transistor photodetector based on MoSe2 and WSe2. With proper modulating the depletion layer and Schottky barrier using source-drain and gate bias, the device can effectively reduce dark current, resulting in an ultrahigh photodetectivity of 1.55 × 1013 Jones and an ultrahigh optical switching ratio of 104. Furthermore, our photodetector exhibits a high photoresponsivity of 476 A/W and an ultrafast response time of 50 μs under 635 nm laser irradiation with an extended detection capability to the 1550 nm band. These outstanding performances highlight the potential of 2D heterojunctions in addressing the growing demands of next-generation photonic sensors.
Collapse
Affiliation(s)
- Jialiang Li
- School of Electronic Science and Engineering (School of Microelectronics), South China Normal University, Foshan 528225, P. R. China
| | - Quan Chen
- School of Electronic Science and Engineering (School of Microelectronics), South China Normal University, Foshan 528225, P. R. China
| | - Qi Wang
- School of Electronic Science and Engineering (School of Microelectronics), South China Normal University, Foshan 528225, P. R. China
| | - Derek Hao
- Centre for Atomaterials and Nanomanufacturing, School of Science, STEM College, RMIT University, Melbourne 3000, Australia
| | - Xin Zhang
- School of Materials Science and Engineering, Henan Polytechnic University, JiaoZuo 454003, P. R. China
| | - Xuechen Chen
- School of Electronic Information, Central South University, Changsha 410083, P. R. China
| | - Qi Huang
- State Key Laboratory of Environmental Friendly Energy Materials, Southwest University of Science and Technology, Mianyang 621010, P. R. China
| | - Liang Li
- Institute of Solid State Physics Hefei Institutes of Physical Science, Chinese Academy of Sciences, Hefei 230601, P. R. China
| | - Tianyi Ma
- Centre for Atomaterials and Nanomanufacturing, School of Science, STEM College, RMIT University, Melbourne 3000, Australia
| | - Baohua Jia
- Centre for Atomaterials and Nanomanufacturing, School of Science, STEM College, RMIT University, Melbourne 3000, Australia
| | - Zuxin Chen
- School of Electronic Science and Engineering (School of Microelectronics), South China Normal University, Foshan 528225, P. R. China
| |
Collapse
|
5
|
Fang W, Liu C, Zhu Z, Wu C, Cheng Q, Song Q, Wang Y, Lai X, Song Y, Jiang L, Li M. Bioinspired single-shot polarization photodetector based on four-directional grating arrays capped perovskite single-crystal thin film. SCIENCE ADVANCES 2024; 10:eadr5375. [PMID: 39630894 PMCID: PMC11616686 DOI: 10.1126/sciadv.adr5375] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/05/2024] [Accepted: 10/30/2024] [Indexed: 12/07/2024]
Abstract
Polarization photodetectors (pol-PDs) have widespread applications in geological remote sensing, machine vision, biological medicine, and so on. However, commercial pol-PDs use bulky and complicated optical systems with lenses, polarizers, and mechanical spools, which are complex and cumbersome, and respond slowly. Inspired by the desert ants' compound eyes, we developed a single-shot pol-PD based on four-directional grating arrays capped perovskite single-crystal thin film without other standard polarization optics. Our pol-PD has a high detectivity, two orders of magnitude greater than that of commercial photodetectors, and exhibits high polarization sensitivity. The high performance of our pol-PD is due to the highly crystalline perovskite single-crystal thin film and regular nanograting structure, made by a nanoimprinting crystallization method. Our single-shot pol-PD is a compact on-chip optoelectronic device that demonstrates excellent performance in a wide range of applications including accurate bionic navigation, sharp image restoration in hazy scenes, stress visualization of polymers, and detection of cancerous areas in tissues without histological staining.
Collapse
Affiliation(s)
- Wenzhong Fang
- CAS Key Laboratory of Bio-inspired Materials and Interface Science, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing 100190, P. R. China
- School of Transportation Science and Engineering, Beihang University, Beijing 100190, P. R. China
| | - Chengben Liu
- CAS Key Laboratory of Bio-inspired Materials and Interface Science, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing 100190, P. R. China
- School of Chemistry, Key Laboratory of Bio-inspired Smart Interfacial Science and Technology of Ministry of Education, Beihang University, Beijing 100190, P. R. China
| | - Zixin Zhu
- CAS Key Laboratory of Bio-inspired Materials and Interface Science, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing 100190, P. R. China
| | - Chao Wu
- Department of Civil and Environmental Engineering, Imperial College London, London SW7 2AZ, UK
| | - Qunfeng Cheng
- School of Chemistry, Key Laboratory of Bio-inspired Smart Interfacial Science and Technology of Ministry of Education, Beihang University, Beijing 100190, P. R. China
| | - Qian Song
- Key Laboratory of Green Printing, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, P. R. China
| | - Yang Wang
- Key Laboratory of Green Printing, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, P. R. China
| | - Xintao Lai
- Key Laboratory of Green Printing, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, P. R. China
| | - Yanlin Song
- Key Laboratory of Green Printing, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, P. R. China
| | - Lei Jiang
- CAS Key Laboratory of Bio-inspired Materials and Interface Science, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing 100190, P. R. China
| | - Mingzhu Li
- CAS Key Laboratory of Bio-inspired Materials and Interface Science, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing 100190, P. R. China
- University of Chinese Academy of Sciences, Beijing 100049, P. R. China
| |
Collapse
|
6
|
Ma T, Xue N, Muhammad A, Fang G, Yan J, Chen R, Sun J, Sun X. Recent Progress in Photodetectors: From Materials to Structures and Applications. MICROMACHINES 2024; 15:1249. [PMID: 39459123 PMCID: PMC11509732 DOI: 10.3390/mi15101249] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/14/2024] [Revised: 10/03/2024] [Accepted: 10/06/2024] [Indexed: 10/28/2024]
Abstract
Photodetectors are critical components in a wide range of applications, from imaging and sensing to communications and environmental monitoring. Recent advancements in material science have led to the development of emerging photodetecting materials, such as perovskites, polymers, novel two-dimensional materials, and quantum dots, which offer unique optoelectronic properties and high tunability. This review presents a comprehensive overview of the synthesis methodologies for these cutting-edge materials, highlighting their potential to enhance photodetection performance. Additionally, we explore the design and fabrication of photodetectors with novel structures and physics, emphasizing devices that achieve high figure-of-merit parameters, such as enhanced sensitivity, fast response times, and broad spectral detection. Finally, we discuss the demonstration of new applications enabled by these advanced photodetectors, including flexible and wearable devices, next-generation imaging systems, and environmental sensing technologies. Through this review, we aim to provide insights into the current trends and future directions in the field of photodetection, guiding further research and development in this rapidly evolving area.
Collapse
Affiliation(s)
- Tianjun Ma
- School of Electronics and Communication Engineering, Quanzhou University of Information Engineering, Quanzhou 362000, China; (T.M.)
| | - Ning Xue
- School of Electronics and Communication Engineering, Quanzhou University of Information Engineering, Quanzhou 362000, China; (T.M.)
| | - Abdul Muhammad
- School of Electronics and Communication Engineering, Quanzhou University of Information Engineering, Quanzhou 362000, China; (T.M.)
| | - Gang Fang
- School of Electronics and Communication Engineering, Quanzhou University of Information Engineering, Quanzhou 362000, China; (T.M.)
| | - Jinyao Yan
- School of Electronics and Communication Engineering, Quanzhou University of Information Engineering, Quanzhou 362000, China; (T.M.)
| | - Rongkun Chen
- School of Electronics and Communication Engineering, Quanzhou University of Information Engineering, Quanzhou 362000, China; (T.M.)
| | - Jianhai Sun
- State Key Laboratory of Transducer Technology Institute of Electronics, Chinese Academy of Sciences, Beijing 100190, China
| | - Xuguang Sun
- School of Electronics and Communication Engineering, Quanzhou University of Information Engineering, Quanzhou 362000, China; (T.M.)
| |
Collapse
|
7
|
Yue Y, Chai N, Li M, Zeng Z, Li S, Chen X, Zhou J, Wang H, Wang X. Ultrafast Photoexcitation Induced Passivation for Quasi-2D Perovskite Photodetectors. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2407347. [PMID: 38857569 DOI: 10.1002/adma.202407347] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/23/2024] [Indexed: 06/12/2024]
Abstract
Quasi-2D perovskites exhibit great potential in photodetectors due to their exceptional optoelectronic responsivity and stability, compared to their 3D counterparts. However, the defects are detrimental to the responsivity, response speed, and stability of perovskite photodetectors. Herein, an ultrafast photoexcitation-induced passivation technique is proposed to synergistically reduce the dimensionality at the surface and induce oxygen doping in the bulk, via tuning the photoexcitation intensity. At the optimal photoexcitation level, the excited electrons and holes generate stretching force on the Pb─I bonds at the interlayered [PbI6]-, resulting in low dimensional perovskite formation, and the absorptive oxygen is combined with I vacancies at the same time. These two induced processes synergistically boost the carrier transport and interface contact performance. The most outstanding device exhibits a fast response speed with rise/decay time of 201/627 ns, with a peak responsivity/detectivity of 163 mA W-1/4.52 × 1010 Jones at 325 nm and the enhanced cycling stability. This work suggests the possibility of a new passivation technique for high performance 2D perovskite optoelectronics.
Collapse
Affiliation(s)
- Yunfan Yue
- Center of Femtosecond Laser Manufacturing for Advanced Materials and Devices, State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan, 430070, P. R. China
- Foshan Xianhu Laboratory of the Advanced Energy Science and Technology Guangdong Laboratory, Foshan, 528216, P. R. China
- School of Materials Science and Engineering, Wuhan University of Technology, Wuhan, 430070, P. R. China
| | - NianYao Chai
- Center of Femtosecond Laser Manufacturing for Advanced Materials and Devices, State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan, 430070, P. R. China
- International School of Materials Science and Engineering, Wuhan University of Technology, Wuhan, 430070, P. R. China
| | - Mingyu Li
- School of Science, Wuhan University of Technology, Wuhan, Hubei, 430070, China
| | - Zhongle Zeng
- Center of Femtosecond Laser Manufacturing for Advanced Materials and Devices, State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan, 430070, P. R. China
- International School of Materials Science and Engineering, Wuhan University of Technology, Wuhan, 430070, P. R. China
| | - Sheng Li
- Center of Femtosecond Laser Manufacturing for Advanced Materials and Devices, State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan, 430070, P. R. China
- International School of Materials Science and Engineering, Wuhan University of Technology, Wuhan, 430070, P. R. China
| | - Xiangyu Chen
- Center of Femtosecond Laser Manufacturing for Advanced Materials and Devices, State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan, 430070, P. R. China
- School of Materials Science and Engineering, Wuhan University of Technology, Wuhan, 430070, P. R. China
| | - Jiakang Zhou
- Center of Femtosecond Laser Manufacturing for Advanced Materials and Devices, State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan, 430070, P. R. China
- International School of Materials Science and Engineering, Wuhan University of Technology, Wuhan, 430070, P. R. China
| | - Huan Wang
- Center of Femtosecond Laser Manufacturing for Advanced Materials and Devices, State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan, 430070, P. R. China
- School of Materials Science and Engineering, Wuhan University of Technology, Wuhan, 430070, P. R. China
| | - Xuewen Wang
- Center of Femtosecond Laser Manufacturing for Advanced Materials and Devices, State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan, 430070, P. R. China
- Foshan Xianhu Laboratory of the Advanced Energy Science and Technology Guangdong Laboratory, Foshan, 528216, P. R. China
- International School of Materials Science and Engineering, Wuhan University of Technology, Wuhan, 430070, P. R. China
| |
Collapse
|
8
|
Cao F, Liu Y, Liu M, Han Z, Xu X, Fan Q, Sun B. Wide Bandgap Semiconductors for Ultraviolet Photodetectors: Approaches, Applications, and Prospects. RESEARCH (WASHINGTON, D.C.) 2024; 7:0385. [PMID: 38803505 PMCID: PMC11128649 DOI: 10.34133/research.0385] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 03/20/2024] [Accepted: 04/21/2024] [Indexed: 05/29/2024]
Abstract
Ultraviolet (UV) light, invisible to the human eye, possesses both benefits and risks. To harness its potential, UV photodetectors (PDs) have been engineered. These devices can convert UV photons into detectable signals, such as electrical impulses or visible light, enabling their application in diverse fields like environmental monitoring, healthcare, and aerospace. Wide bandgap semiconductors, with their high-efficiency UV light absorption and stable opto-electronic properties, stand out as ideal materials for UV PDs. This review comprehensively summarizes recent advancements in both traditional and emerging wide bandgap-based UV PDs, highlighting their roles in UV imaging, communication, and alarming. Moreover, it examines methods employed to enhance UV PD performance, delving into the advantages, challenges, and future research prospects in this area. By doing so, this review aims to spark innovation and guide the future development and application of UV PDs.
Collapse
Affiliation(s)
- Fa Cao
- State Key Laboratory of Organic Electronics and Information Displays,
Institute of Advanced Materials (IAM), School of Material Science and Engineering, Nanjing University of Posts and Telecommunication (NJUPT), Nanjing210023, P. R. China
| | - Ying Liu
- State Key Laboratory of Organic Electronics and Information Displays,
Institute of Advanced Materials (IAM), School of Material Science and Engineering, Nanjing University of Posts and Telecommunication (NJUPT), Nanjing210023, P. R. China
| | - Mei Liu
- State Key Laboratory of Organic Electronics and Information Displays,
Institute of Advanced Materials (IAM), School of Material Science and Engineering, Nanjing University of Posts and Telecommunication (NJUPT), Nanjing210023, P. R. China
| | - Zeyao Han
- State Key Laboratory of Organic Electronics and Information Displays,
Institute of Advanced Materials (IAM), School of Material Science and Engineering, Nanjing University of Posts and Telecommunication (NJUPT), Nanjing210023, P. R. China
| | - Xiaobao Xu
- School of Electronic Science and Engineering,
Southeast University, Nanjing 210000, P. R. China
| | - Quli Fan
- State Key Laboratory of Organic Electronics and Information Displays,
Institute of Advanced Materials (IAM), School of Material Science and Engineering, Nanjing University of Posts and Telecommunication (NJUPT), Nanjing210023, P. R. China
| | - Bin Sun
- State Key Laboratory of Organic Electronics and Information Displays,
Institute of Advanced Materials (IAM), School of Material Science and Engineering, Nanjing University of Posts and Telecommunication (NJUPT), Nanjing210023, P. R. China
| |
Collapse
|
9
|
Chang S, Koo JH, Yoo J, Kim MS, Choi MK, Kim DH, Song YM. Flexible and Stretchable Light-Emitting Diodes and Photodetectors for Human-Centric Optoelectronics. Chem Rev 2024; 124:768-859. [PMID: 38241488 DOI: 10.1021/acs.chemrev.3c00548] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/21/2024]
Abstract
Optoelectronic devices with unconventional form factors, such as flexible and stretchable light-emitting or photoresponsive devices, are core elements for the next-generation human-centric optoelectronics. For instance, these deformable devices can be utilized as closely fitted wearable sensors to acquire precise biosignals that are subsequently uploaded to the cloud for immediate examination and diagnosis, and also can be used for vision systems for human-interactive robotics. Their inception was propelled by breakthroughs in novel optoelectronic material technologies and device blueprinting methodologies, endowing flexibility and mechanical resilience to conventional rigid optoelectronic devices. This paper reviews the advancements in such soft optoelectronic device technologies, honing in on various materials, manufacturing techniques, and device design strategies. We will first highlight the general approaches for flexible and stretchable device fabrication, including the appropriate material selection for the substrate, electrodes, and insulation layers. We will then focus on the materials for flexible and stretchable light-emitting diodes, their device integration strategies, and representative application examples. Next, we will move on to the materials for flexible and stretchable photodetectors, highlighting the state-of-the-art materials and device fabrication methods, followed by their representative application examples. At the end, a brief summary will be given, and the potential challenges for further development of functional devices will be discussed as a conclusion.
Collapse
Affiliation(s)
- Sehui Chang
- School of Electrical Engineering and Computer Science, Gwangju Institute of Science and Technology (GIST), Gwangju 61005, Republic of Korea
| | - Ja Hoon Koo
- Department of Semiconductor Systems Engineering, Sejong University, Seoul 05006, Republic of Korea
- Institute of Semiconductor and System IC, Sejong University, Seoul 05006, Republic of Korea
| | - Jisu Yoo
- Department of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, Republic of Korea
| | - Min Seok Kim
- School of Electrical Engineering and Computer Science, Gwangju Institute of Science and Technology (GIST), Gwangju 61005, Republic of Korea
| | - Moon Kee Choi
- Department of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, Republic of Korea
- Graduate School of Semiconductor Materials and Devices Engineering, Center for Future Semiconductor Technology (FUST), UNIST, Ulsan 44919, Republic of Korea
- Center for Nanoparticle Research, Institute for Basic Science (IBS), Seoul 08826, Republic of Korea
| | - Dae-Hyeong Kim
- Center for Nanoparticle Research, Institute for Basic Science (IBS), Seoul 08826, Republic of Korea
- School of Chemical and Biological Engineering, Institute of Chemical Processes, Seoul National University (SNU), Seoul 08826, Republic of Korea
- Department of Materials Science and Engineering, SNU, Seoul 08826, Republic of Korea
- Interdisciplinary Program for Bioengineering, SNU, Seoul 08826, Republic of Korea
| | - Young Min Song
- School of Electrical Engineering and Computer Science, Gwangju Institute of Science and Technology (GIST), Gwangju 61005, Republic of Korea
- Department of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, Republic of Korea
- Artificial Intelligence (AI) Graduate School, GIST, Gwangju 61005, Republic of Korea
| |
Collapse
|
10
|
Ma R, Tan Q, Liu Y, Wang Q. High performance photodetector based on CdS/CdS 0.42Se 0.58nanobelts heterojunction. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2023; 36:125305. [PMID: 38081072 DOI: 10.1088/1361-648x/ad144f] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/21/2023] [Accepted: 12/11/2023] [Indexed: 12/21/2023]
Abstract
The ternary alloy CdSxSe1-xcombines the physical properties of CdS and CdSe, and its band gap can be adjusted by changing the element composition. The alloy has charming photoelectric properties as well as potential application value in photoelectric devices. In this work, the CdS/CdS0.42Se0.58nanobelt (NB) heterojunction device was prepared by chemical vapor deposition combined with a typical dry transfer technique. The heterojunction photodetector shows high light switching ratio of 6.79 × 104, large spectral responsivity of 1260 A W-1, high external quantum efficiency of 2.66 × 105% and large detectivity of 7.19 × 1015cm Hz1/2W-1under 590 nm illumination and 3 V bias. Its rise and decay time is about 45/90μs. The performance of the heterojunction photodetector was comparable or even better than that of other CdS(Se) based photodetector device. The results indicate that the CdS/CdS0.42Se0.58NB heterojunction possesses a promising potential application in high performance photodetectors.
Collapse
Affiliation(s)
- Ran Ma
- College of Physics and Electronic Information, Yunnan Normal University, Yunnan, Kunming 650500, People's Republic of China
| | - Qiuhong Tan
- College of Physics and Electronic Information, Yunnan Normal University, Yunnan, Kunming 650500, People's Republic of China
- Yunnan Provincial Key Laboratory for Photoelectric Information Technology, Yunnan Normal University, Yunnan, Kunming 650500, People's Republic of China
| | - Yingkai Liu
- College of Physics and Electronic Information, Yunnan Normal University, Yunnan, Kunming 650500, People's Republic of China
- Yunnan Provincial Key Laboratory for Photoelectric Information Technology, Yunnan Normal University, Yunnan, Kunming 650500, People's Republic of China
| | - Qianjin Wang
- College of Physics and Electronic Information, Yunnan Normal University, Yunnan, Kunming 650500, People's Republic of China
- Yunnan Provincial Key Laboratory for Photoelectric Information Technology, Yunnan Normal University, Yunnan, Kunming 650500, People's Republic of China
| |
Collapse
|
11
|
Xiong J, Zhang ZH, Li Z, Zheng P, Li J, Zhang X, Gao Z, Wei Z, Zheng G, Wang SP, Liu HC. Perovskite single-pixel detector for dual-color metasurface imaging recognition in complex environment. LIGHT, SCIENCE & APPLICATIONS 2023; 12:286. [PMID: 38008796 PMCID: PMC10679139 DOI: 10.1038/s41377-023-01311-2] [Citation(s) in RCA: 6] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/14/2023] [Revised: 10/10/2023] [Accepted: 10/16/2023] [Indexed: 11/28/2023]
Abstract
Highly efficient multi-dimensional data storage and extraction are two primary ends for the design and fabrication of emerging optical materials. Although metasurfaces show great potential in information storage due to their modulation for different degrees of freedom of light, a compact and efficient detector for relevant multi-dimensional data retrieval is still a challenge, especially in complex environments. Here, we demonstrate a multi-dimensional image storage and retrieval process by using a dual-color metasurface and a double-layer integrated perovskite single-pixel detector (DIP-SPD). Benefitting from the photoelectric response characteristics of the FAPbBr2.4I0.6 and FAPbI3 films and their stacked structure, our filter-free DIP-SPD can accurately reconstruct different colorful images stored in a metasurface within a single-round measurement, even in complex environments with scattering media or strong background noise. Our work not only provides a compact, filter-free, and noise-robust detector for colorful image extraction in a metasurface, but also paves the way for color imaging application of perovskite-like bandgap tunable materials.
Collapse
Affiliation(s)
- Jiahao Xiong
- Institute of Applied Physics and Materials Engineering, University of Macau, Taipa, Macao SAR, China
| | - Zhi-Hong Zhang
- Institute of Applied Physics and Materials Engineering, University of Macau, Taipa, Macao SAR, China
- State Key Laboratory of High Power Semiconductor Lasers, Changchun University of Science and Technology, Changchun, China
| | - Zile Li
- Electronic Information School, and School of Microelectronics, Wuhan University, Wuhan, China
- Peng Cheng Laboratory, Shenzhen, China
| | - Peixia Zheng
- Institute of Applied Physics and Materials Engineering, University of Macau, Taipa, Macao SAR, China
| | - Jiaxin Li
- Electronic Information School, and School of Microelectronics, Wuhan University, Wuhan, China
| | - Xuan Zhang
- Institute of Applied Physics and Materials Engineering, University of Macau, Taipa, Macao SAR, China
| | - Zihan Gao
- Institute of Applied Physics and Materials Engineering, University of Macau, Taipa, Macao SAR, China
| | - Zhipeng Wei
- State Key Laboratory of High Power Semiconductor Lasers, Changchun University of Science and Technology, Changchun, China
| | - Guoxing Zheng
- Electronic Information School, and School of Microelectronics, Wuhan University, Wuhan, China.
- Peng Cheng Laboratory, Shenzhen, China.
| | - Shuang-Peng Wang
- Institute of Applied Physics and Materials Engineering, University of Macau, Taipa, Macao SAR, China.
| | - Hong-Chao Liu
- Institute of Applied Physics and Materials Engineering, University of Macau, Taipa, Macao SAR, China.
| |
Collapse
|