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Fan J, Han C, Yang G, Song B, Xu R, Xiang C, Zhang T, Qian L. Recent Progress of Quantum Dots Light-Emitting Diodes: Materials, Device Structures, and Display Applications. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024:e2312948. [PMID: 38813832 DOI: 10.1002/adma.202312948] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/30/2023] [Revised: 04/05/2024] [Indexed: 05/31/2024]
Abstract
Colloidal quantum dots (QDs), as a class of 0D semiconductor materials, have generated widespread interest due to their adjustable band gap, exceptional color purity, near-unity quantum yield, and solution-processability. With decades of dedicated research, the potential applications of quantum dots have garnered significant recognition in both the academic and industrial communities. Furthermore, the related quantum dot light-emitting diodes (QLEDs) stand out as one of the most promising contenders for the next-generation display technologies. Although QD-based color conversion films are applied to improve the color gamut of existing display technologies, the broader application of QLED devices remains in its nascent stages, facing many challenges on the path to commercialization. This review encapsulates the historical discovery and subsequent research advancements in QD materials and their synthesis methods. Additionally, the working mechanisms and architectural design of QLED prototype devices are discussed. Furthermore, the review surveys the latest advancements of QLED devices within the display industry. The narrative concludes with an examination of the challenges and perspectives of QLED technology in the foreseeable future.
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Affiliation(s)
- Junpeng Fan
- Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, P. R. China
- Laboratory of Advanced Nano-Optoelectronic Materials and Devices, Qianwan Institute of CNITECH, Ningbo, 315000, P. R. China
| | - Changfeng Han
- Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, P. R. China
- Laboratory of Advanced Nano-Optoelectronic Materials and Devices, Qianwan Institute of CNITECH, Ningbo, 315000, P. R. China
| | - Guojian Yang
- Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, P. R. China
- Laboratory of Advanced Nano-Optoelectronic Materials and Devices, Qianwan Institute of CNITECH, Ningbo, 315000, P. R. China
| | - Bin Song
- Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, P. R. China
- Department of Materials Science and Engineering, Xiamen University, Xiamen, 361005, P. R. China
| | - Rui Xu
- Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, P. R. China
- Department of Mechanical, Materials and Manufacturing Engineering, University of Nottingham Ningbo China, Ningbo, 315100, P. R. China
| | - Chaoyu Xiang
- Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, P. R. China
- Laboratory of Advanced Nano-Optoelectronic Materials and Devices, Qianwan Institute of CNITECH, Ningbo, 315000, P. R. China
| | - Ting Zhang
- Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, P. R. China
- Laboratory of Advanced Nano-Optoelectronic Materials and Devices, Qianwan Institute of CNITECH, Ningbo, 315000, P. R. China
| | - Lei Qian
- Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, P. R. China
- Laboratory of Advanced Nano-Optoelectronic Materials and Devices, Qianwan Institute of CNITECH, Ningbo, 315000, P. R. China
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Krishnamurthi M, Gottapu S, Velpuri VR. Single-step synthesis of ternary metal chalcogenides (sf-CuInS2 and sf-CuInSe2) stripped off the organic cover and their use as a catalyst for symmetric Glaser-Hay coupling reactions. Dalton Trans 2024; 53:8593-8603. [PMID: 38690592 DOI: 10.1039/d4dt00442f] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 05/02/2024]
Abstract
Generally, inorganic nano/microparticles produced by chemical routes are covered by organic surfactants or polymers to control their agglomeration during their synthesis. However, these surfactants and polymers negatively affect their catalytic activity because these molecules mask the surface. This work presents the synthesis of surfactant-free CuInS2 and CuInSe2 (sf-CuInS2 and sf-CuInSe2) nano/microparticles through simple reactions without surfactant or polymer coatings using LiBH4 under a thermodynamically favourable condition. These reactions are rare observations of a single-step process to produce ternary metal chalcogenides without any template assistance. We have also demonstrated efficient catalysis by sf-CuInS2 nanoparticles in the coupling reaction of substituted phenylacetylenes. We tested it as catalysts in dimerizing 1,3-diyne derivatives while using 8-diazabicyclo[5.4.0]undec-7-ene (DBU) as the base. These Glassar-Hay coupling reactions are conducted at room temperature in acetonitrile (4-7 h, depending on the substrate) using 10 mg of sf-CuInS2. The maximum yield obtained in these reactions is 97%, while the catalyst is reusable for five cycles with little difference in its ability to catalyse. The effectiveness of the catalyst is credited to the availability of a free catalytic surface.
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Affiliation(s)
| | - Sanyasinaidu Gottapu
- School of Chemistry, Univeristy of Hyderabad, Gachibowli, Hyderabad 500046, Telangana, India.
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Liu Z, Hao C, Sun Y, Wang J, Dube L, Chen M, Dang W, Hu J, Li X, Chen O. Rigid CuInS 2/ZnS Core/Shell Quantum Dots for High Performance Infrared Light-Emitting Diodes. NANO LETTERS 2024; 24:5342-5350. [PMID: 38630899 DOI: 10.1021/acs.nanolett.4c01249] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/19/2024]
Abstract
CuInS2 (CIS) quantum dots (QDs) represent an important class of colloidal materials with broad application potential, owing to their low toxicity and unique optical properties. Although coating with a ZnS shell has been identified as a crucial method to enhance optical performance, the occurrence of cation exchange has historically resulted in the unintended formation of Cu-In-Zn-S alloyed QDs, causing detrimental blueshifts in both absorption and photoluminescence (PL) spectral profiles. In this study, we present a facile one-pot synthetic strategy aimed at impeding the cation exchange process and promoting ZnS shell growth on CIS core QDs. The suppression of both electron-phonon interaction and Auger recombination by the rigid ZnS shell results in CIS/ZnS core/shell QDs that exhibit a wide near-infrared (NIR) emission coverage and a remarkable PL quantum yield of 92.1%. This effect boosts the fabrication of high-performance, QD-based NIR light-emitting diodes with the best stability of such materials so far.
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Affiliation(s)
- Zhenyang Liu
- Hebei Key Laboratory of Optic-Electronic Information and Materials, College of Physics Science and Technology, Hebei University, Baoding 071002, China
- Department of Chemistry, Brown University, Providence, Rhode Island 02912, United States
| | - Chaoqi Hao
- Hebei Key Laboratory of Optic-Electronic Information and Materials, College of Physics Science and Technology, Hebei University, Baoding 071002, China
| | - Yingying Sun
- Hebei Key Laboratory of Optic-Electronic Information and Materials, College of Physics Science and Technology, Hebei University, Baoding 071002, China
| | - Junyu Wang
- Department of Chemistry, Brown University, Providence, Rhode Island 02912, United States
| | - Lacie Dube
- Department of Chemistry, Brown University, Providence, Rhode Island 02912, United States
| | - Mingjun Chen
- Hebei Key Laboratory of Optic-Electronic Information and Materials, College of Physics Science and Technology, Hebei University, Baoding 071002, China
| | - Wei Dang
- Hebei Key Laboratory of Optic-Electronic Information and Materials, College of Physics Science and Technology, Hebei University, Baoding 071002, China
| | - Jinxiao Hu
- Hebei Key Laboratory of Optic-Electronic Information and Materials, College of Physics Science and Technology, Hebei University, Baoding 071002, China
| | - Xu Li
- Hebei Key Laboratory of Optic-Electronic Information and Materials, College of Physics Science and Technology, Hebei University, Baoding 071002, China
| | - Ou Chen
- Department of Chemistry, Brown University, Providence, Rhode Island 02912, United States
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Xiang X, Zhang M, Huang Q, Mao Y, Jia J, Zeng X, Dong Y, Liao J, Chen X, Yao X, Zheng Q, Chen W. Construction of S-scheme CuInS 2/ZnIn 2S 4 heterostructures for enhanced photocatalytic activity towards Cr(VI) removal and antibiotics degradation. CHEMOSPHERE 2024; 352:141351. [PMID: 38340997 DOI: 10.1016/j.chemosphere.2024.141351] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/31/2023] [Revised: 01/28/2024] [Accepted: 01/31/2024] [Indexed: 02/12/2024]
Abstract
The efficient and ecofriendly removal of pharmaceutical antibiotics and heavy metal Cr(VI) from water sources is a crucial challenge in current environmental management. Photocatalysis presents a viable environmentally friendly solution for eliminating organic contaminants and heavy-metal ions. In this study, a novel S-scheme CuInS2/ZnIn2S4 (CIS/ZIS) heterojunction was developed using a one-pot solvothermal method. The optimized CIS/ZIS heterojunction exhibited considerably improved photocatalytic activity for the removal of antibiotics and Cr(VI), achieving over 90% removal for both tetracycline hydrochloride (TC) (20 mg/L) and Cr(VI) (20 mg/L) under visible light irradiation. The study also delved into the effect of coexisting inorganic anions and assessed the cyclic stability of the composite photocatalysts. This enhancement mechanism can be delineated into three key elements. First, the incorporation of the narrow-gap semiconductor CuInS2 effectively augmented the photoabsorption capacity. Second, the inclusion of ZnIn2S4 caused an increase in surface active sites. Most importantly, the internal electric field at the interface between CuInS2 and ZnIn2S4 expedited the separation of photogenerated carriers. Furthermore, the results revealed that superoxide radical and photogenerated holes are the primary active substance responsible for TC removal, while photogenerated electrons play a central role in the photoreduction of Cr(VI). To gain insights into the transport pathways of photogenerated carriers, we conducted experiments with nitrotetrazolium blue chloride (NBT) and photodeposited gold. This study offers an innovative approach to enhancing the photocatalytic performance of ternary In-based materials by constructing S-scheme heterojunctions.
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Affiliation(s)
- Xiaokang Xiang
- College of Chemical and Material Engineering, Quzhou University, Quzhou, Zhejiang, 324000, China
| | - Min Zhang
- College of Chemical and Material Engineering, Quzhou University, Quzhou, Zhejiang, 324000, China; East China University of Science and Technology Changshu Research Institute Co., Suzhou, Jiangsu Province, 215000, China.
| | - Qitao Huang
- College of Chemical and Material Engineering, Quzhou University, Quzhou, Zhejiang, 324000, China
| | - Yue Mao
- Key Laboratory of Education Ministry for Soft Chemistry and Functional Materials, Nanjing University of Science and Technology, Nanjing 210094, China
| | - Junhao Jia
- College of Chemical and Material Engineering, Quzhou University, Quzhou, Zhejiang, 324000, China
| | - Xiantao Zeng
- College of Chemical and Material Engineering, Quzhou University, Quzhou, Zhejiang, 324000, China
| | - Yunyuan Dong
- College of Chemical and Material Engineering, Quzhou University, Quzhou, Zhejiang, 324000, China
| | - Jianming Liao
- College of Chemical and Material Engineering, Quzhou University, Quzhou, Zhejiang, 324000, China
| | - Xiaobin Chen
- College of Chemical and Material Engineering, Quzhou University, Quzhou, Zhejiang, 324000, China
| | - Xiaxi Yao
- East China University of Science and Technology Changshu Research Institute Co., Suzhou, Jiangsu Province, 215000, China
| | - Qifu Zheng
- College of Chemical and Material Engineering, Quzhou University, Quzhou, Zhejiang, 324000, China.
| | - Wei Chen
- School of Pharmaceutical and Chemical Engineering, Taizhou University, Jiaojiang 318000, Zhejiang Province, China.
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Lin X, Chen T. A Review of in vivo Toxicity of Quantum Dots in Animal Models. Int J Nanomedicine 2023; 18:8143-8168. [PMID: 38170122 PMCID: PMC10759915 DOI: 10.2147/ijn.s434842] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/10/2023] [Accepted: 12/15/2023] [Indexed: 01/05/2024] Open
Abstract
Tremendous research efforts have been devoted to nanoparticles for applications in optoelectronics and biomedicine. Over the past decade, quantum dots (QDs) have become one of the fastest growing areas of research in nanotechnology because of outstanding photophysical properties, including narrow and symmetrical emission spectrum, broad fluorescence excitation spectrum, the tenability of the emission wavelength with the particle size and composition, anti-photobleaching ability and stable fluorescence. These characteristics are suitable for optical imaging, drug delivery and other biomedical applications. Research on QDs toxicology has demonstrated QDs affect or damage the biological system to some extent, and this situation is generally caused by the metal ions and some special properties in QDs, which hinders the further application of QDs in the biomedical field. The toxicological mechanism mainly stems from the release of heavy metal ions and generation of reactive oxygen species (ROS). At the same time, the contact reaction with QDs also cause disorders in organelles and changes in gene expression profiles. In this review, we try to present an overview of the toxicity and related toxicity mechanisms of QDs in different target organs. It is believed that the evaluation of toxicity and the synthesis of environmentally friendly QDs are the primary issues to be addressed for future widespread applications. However, considering the many different types and potential modifications, this review on the potential toxicity of QDs is still not clearly elucidated, and further research is needed on this meaningful topic.
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Affiliation(s)
- Xiaotan Lin
- School of Basic Medicine, Guangdong Medical University, DongGuan, People’s Republic of China
- Department of Family Planning, Second Clinical Medical College of Jinan University, Shenzhen People’s Hospital, Shenzhen, People’s Republic of China
| | - Tingting Chen
- School of Basic Medicine, Guangdong Medical University, DongGuan, People’s Republic of China
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Lee GH, Kim K, Kim Y, Yang J, Choi MK. Recent Advances in Patterning Strategies for Full-Color Perovskite Light-Emitting Diodes. NANO-MICRO LETTERS 2023; 16:45. [PMID: 38060071 DOI: 10.1007/s40820-023-01254-8] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/30/2023] [Accepted: 10/19/2023] [Indexed: 12/08/2023]
Abstract
Metal halide perovskites have emerged as promising light-emitting materials for next-generation displays owing to their remarkable material characteristics including broad color tunability, pure color emission with remarkably narrow bandwidths, high quantum yield, and solution processability. Despite recent advances have pushed the luminance efficiency of monochromic perovskite light-emitting diodes (PeLEDs) to their theoretical limits, their current fabrication using the spin-coating process poses limitations for fabrication of full-color displays. To integrate PeLEDs into full-color display panels, it is crucial to pattern red-green-blue (RGB) perovskite pixels, while mitigating issues such as cross-contamination and reductions in luminous efficiency. Herein, we present state-of-the-art patterning technologies for the development of full-color PeLEDs. First, we highlight recent advances in the development of efficient PeLEDs. Second, we discuss various patterning techniques of MPHs (i.e., photolithography, inkjet printing, electron beam lithography and laser-assisted lithography, electrohydrodynamic jet printing, thermal evaporation, and transfer printing) for fabrication of RGB pixelated displays. These patterning techniques can be classified into two distinct approaches: in situ crystallization patterning using perovskite precursors and patterning of colloidal perovskite nanocrystals. This review highlights advancements and limitations in patterning techniques for PeLEDs, paving the way for integrating PeLEDs into full-color panels.
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Affiliation(s)
- Gwang Heon Lee
- Graduate School of Semiconductor Materials and Devices Engineering, Center for Future Semiconductor Technology (FUST), Ulsan National Institute of Science and Technology (UNIST), Ulsan, 44919, Republic of Korea
| | - Kiwook Kim
- Department of Energy Science and Engineering, Daegu Gyeongbuk Institute of Science and Technology (DGIST), Daegu, 42988, Republic of Korea
| | - Yunho Kim
- Graduate School of Semiconductor Materials and Devices Engineering, Center for Future Semiconductor Technology (FUST), Ulsan National Institute of Science and Technology (UNIST), Ulsan, 44919, Republic of Korea
| | - Jiwoong Yang
- Department of Energy Science and Engineering, Daegu Gyeongbuk Institute of Science and Technology (DGIST), Daegu, 42988, Republic of Korea.
- Energy Science and Engineering Research Center, Daegu Gyeongbuk Institute of Science and Technology (DGIST), Daegu, 42988, Republic of Korea.
| | - Moon Kee Choi
- Graduate School of Semiconductor Materials and Devices Engineering, Center for Future Semiconductor Technology (FUST), Ulsan National Institute of Science and Technology (UNIST), Ulsan, 44919, Republic of Korea.
- Department of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan, 44919, Republic of Korea.
- Center for Nanoparticle Research, Institute for Basic Science (IBS), Seoul, 08826, Republic of Korea.
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Chen B, Zheng W, Chun F, Xu X, Zhao Q, Wang F. Synthesis and hybridization of CuInS 2 nanocrystals for emerging applications. Chem Soc Rev 2023; 52:8374-8409. [PMID: 37947021 DOI: 10.1039/d3cs00611e] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/12/2023]
Abstract
Copper indium sulfide (CuInS2) is a ternary A(I)B(III)X(VI)2-type semiconductor featuring a direct bandgap with a high absorption coefficient. In attempts to explore their practical applications, nanoscale CuInS2 has been synthesized with crystal sizes down to the quantum confinement regime. The merits of CuInS2 nanocrystals (NCs) include wide emission tunability, a large Stokes shift, long decay time, and eco-friendliness, making them promising candidates in photoelectronics and photovoltaics. Over the past two decades, advances in wet-chemistry synthesis have achieved rational control over cation-anion reactivity during the preparation of colloidal CuInS2 NCs and post-synthesis cation exchange. The precise nano-synthesis coupled with a series of hybridization strategies has given birth to a library of CuInS2 NCs with highly customizable photophysical properties. This review article focuses on the recent development of CuInS2 NCs enabled by advanced synthetic and hybridization techniques. We show that the state-of-the-art CuInS2 NCs play significant roles in optoelectronic and biomedical applications.
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Affiliation(s)
- Bing Chen
- College of Electronic and Optical Engineering & College of Flexible Electronics (Future Technology), Nanjing University of Posts and Telecommunications, 9 Wenyuan Road, Nanjing, Jiangsu 210023, China.
- Department of Materials Science and Engineering, City University of Hong Kong, 83 Tat Chee Avenue, Kowloon 999077, Hong Kong SAR, China.
| | - Weilin Zheng
- Department of Materials Science and Engineering, City University of Hong Kong, 83 Tat Chee Avenue, Kowloon 999077, Hong Kong SAR, China.
- City University of Hong Kong Shenzhen Research Institute, Shenzhen 518057, China
| | - Fengjun Chun
- Department of Materials Science and Engineering, City University of Hong Kong, 83 Tat Chee Avenue, Kowloon 999077, Hong Kong SAR, China.
- City University of Hong Kong Shenzhen Research Institute, Shenzhen 518057, China
| | - Xiuwen Xu
- College of Electronic and Optical Engineering & College of Flexible Electronics (Future Technology), Nanjing University of Posts and Telecommunications, 9 Wenyuan Road, Nanjing, Jiangsu 210023, China.
| | - Qiang Zhao
- College of Electronic and Optical Engineering & College of Flexible Electronics (Future Technology), Nanjing University of Posts and Telecommunications, 9 Wenyuan Road, Nanjing, Jiangsu 210023, China.
- State Key Laboratory of Organic Electronics and Information Displays, Nanjing University of Posts and Telecommunications, 9 Wenyuan Road, Nanjing, Jiangsu 210023, China
| | - Feng Wang
- Department of Materials Science and Engineering, City University of Hong Kong, 83 Tat Chee Avenue, Kowloon 999077, Hong Kong SAR, China.
- City University of Hong Kong Shenzhen Research Institute, Shenzhen 518057, China
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