High-Performance Flexible Bottom-Gate Organic Field-Effect Transistors with Gravure Printed Thin Organic Dielectric

Doped bottom-contact organic field-effect transistors

The influence of doping on doped bottom-gate bottom-contact organic field-effect transistors (OFETs) is discussed. It is shown that the inclusion of a doped layer at the dielectric/organic semiconductor layer leads to a significant reduction in the contact resistances and a fine control of the threshold voltage. Through varying the thickness of the doped layer, a linear shift of threshold voltage V _T from -3.1 to -0.22 V is observed for increasing thickness of doped layer. Meanwhile, the contact resistance at the source and drain electrode is reduced from 138.8 MΩ at V _GS = -10 V for 3 nm to 0.3 MΩ for 7 nm thick doped layers. Furthermore, an increase of charge mobility is observed for increasing thickness of doped layer. Overall, it is shown that doping can minimize injection barriers in bottom-contact OFETs with channel lengths in the micro-meter regime, which has the potential to increase the performance of this technology further.

Proving Scalability of an Organic Semiconductor To Print a TFT-Active Matrix Using a Roll-to-Roll Gravure

Organic semiconductor-based thin-film transistors' (TFTs) charge-carrier mobility has been enhanced up to 25 cm²/V s through the improvement of fabrication methods and greater understanding of the microstructure charge-transport mechanism. To expand the practical feasibility of organic semiconductor-based TFTs, their electrical properties should be easily accessed from the fully printed devices through a scalable printing method, such as a roll-to-roll (R2R) gravure. In this study, four commercially available organic semiconductors were separately formulated into gravure inks. They were then employed in the R2R gravure system (silver ink for printing gate and drain-source electrodes and BaTiO₃ ink for printing dielectric layers) for printing 20 × 20 TFT-active matrix with the resolution of 10 pixels per inch on poly(ethylene terephthalate) (PET) foils to attain electrical properties of organic semiconductors a practical printing method. Electrical characteristics (mobility, on-off current ratio, threshold voltage, and transconductance) of the R2R gravure-printed 20 × 20 TFT-active matrices fabricated with organic semiconducting ink were analyzed statistically, and the results showed more than 98% device yield and 50 % electrical variations in the R2R gravure TFT-active matrices along the PET web.

Emergent Properties of an Organic Semiconductor Driven by its Molecular Chirality

Chiral molecules exist as pairs of nonsuperimposable mirror images; a fundamental symmetry property vastly underexplored in organic electronic devices. Here, we show that organic field-effect transistors (OFETs) made from the helically chiral molecule 1-aza[6]helicene can display up to an 80-fold difference in hole mobility, together with differences in thin-film photophysics and morphology, solely depending on whether a single handedness or a 1:1 mixture of left- and right-handed molecules is employed under analogous fabrication conditions. As the molecular properties of either mirror image isomer are identical, these changes must be a result of the different bulk packing induced by chiral composition. Such underlying structures are investigated using crystal structure prediction, a computational methodology rarely applied to molecular materials, and linked to the difference in charge transport. These results illustrate that chirality may be used as a key tuning parameter in future device applications.

Spatially modulated laser pulses for printing electronics

The use of a digital micromirror device (DMD) in laser-induced forward transfer (LIFT) is reviewed. Combining this technique with high-viscosity donor ink (silver nanopaste) results in laser-printed features that are highly congruent in shape and size to the incident laser beam spatial profile. The DMD empowers LIFT to become a highly parallel, rapidly reconfigurable direct-write technology. By adapting half-toning techniques to the DMD bitmap image, the laser transfer threshold fluence for 10 μm features can be reduced using an edge-enhanced beam profile. The integration of LIFT with this beam-shaping technique allows the printing of complex large-area patterns with a single laser pulse.

Quantitative analysis and optimization of gravure printed metal ink, dielectric, and organic semiconductor films

Here we demonstrate the optimization of gravure printed metal ink, dielectric, and semiconductor formulations. We present a technique for nondestructively imaging printed films using a commercially available flatbed scanner, combined with image analysis to quantify print behavior. Print speed, cliché screen density, nip pressure, the orientation of print structures, and doctor blade extension were found to have a significant impact on the quality of printed films, as characterized by the spreading of printed structures and variation in print homogeneity. Organic semiconductor prints were observed to exhibit multiple periodic modulations, which are correlated to the underlying cell structure.