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Basnet R, Hu J. Understanding and tuning magnetism in van der Waals-type metal thiophosphates. NANOSCALE 2024; 16:15851-15883. [PMID: 39129678 DOI: 10.1039/d4nr01577k] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 08/13/2024]
Abstract
Over the past two decades, significant progress in two-dimensional (2D) materials has invigorated research in condensed matter and material physics in low dimensions. While traditionally studied in three-dimensional systems, magnetism has now been extended to the 2D realm. Recent breakthroughs in 2D magnetism have attracted substantial interest from the scientific community, owing to the stable magnetic order achievable in atomically thin layers of the van der Waals (vdW)-type layered magnetic materials. These advances offer an exciting platform for investigating related phenomena in low dimensions and hold promise for spintronic applications. Consequently, vdW magnetic materials with tunable magnetism have attracted significant attention. Specifically, antiferromagnetic metal thiophosphates MPX3 (M = transition metal, P = phosphorus, X = chalcogen) have been investigated extensively. These materials exhibit long-range magnetic order spanning from bulk to the 2D limit. The magnetism in MPX3 arises from localized moments associated with transition metal ions, making it tunable via substitutions and intercalations. In this review, we focus on such tuning by providing a comprehensive summary of various metal- and chalcogen-substitution and intercalation studies, along with the mechanism of magnetism modulation, and a perspective on the development of this emergent material family.
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Affiliation(s)
- Rabindra Basnet
- Department of Chemistry & Physics, University of Arkansas at Pine Bluff, Pine Bluff, AR, 71603 USA.
| | - Jin Hu
- Department of Physics, University of Arkansas, Fayetteville, Arkansas 72701, USA
- Materials Science and Engineering Program, Institute for Nanoscience and Engineering, University of Arkansas, Fayetteville, Arkansas 72701, USA.
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2
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Gong J, Ding G, Xie C, Wang W, Liu Y, Zhang G, Wang X. Genuine Dirac Half-Metals in Two-Dimensions. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2024; 11:e2307297. [PMID: 38044294 PMCID: PMC10853703 DOI: 10.1002/advs.202307297] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/02/2023] [Revised: 11/08/2023] [Indexed: 12/05/2023]
Abstract
When spin-orbit coupling (SOC) is absent, all proposed half-metals with twofold degenerate nodal points at the K (or K') point in 2D materials are classified as "Dirac half-metals" owing to the way graphene is utilized in the earliest studies. Actually, each band crossing point at the K or K' point is described by a 2D Weyl Hamiltonian with definite chirality; hence, it should be a Weyl point. To the best of its knowledge, there have not yet been any reports of a genuine (i.e., fourfold degenerate) 2D Dirac point half-metal. In this work, using first-principles calculations, it proposes for the first time that the 2D d0 -type ferromagnet Mg4 N4 is a genuine 2D Dirac half-metal candidate with a fourfold degenerate Dirac point at the S high-symmetry point, intrinsic magnetism, a high Curie temperature, 100% spin polarization, topology robust under the SOC and uniaxial and biaxial strains, and spin-polarized edge states. This work can serve as a starting point for future predictions of intrinsically magnetic materials with genuine 2D Dirac points, which will aid the frontier of topo-spintronics research in 2D systems.
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Affiliation(s)
- Jialin Gong
- Institute for Superconducting and Electronic Materials (ISEM)University of WollongongWollongong2500Australia
- School of Physical Science and TechnologySouthwest UniversityChongqing400715China
| | - Guangqian Ding
- School of ScienceChongqing University of Posts and TelecommunicationsChongqing400065China
| | - Chengwu Xie
- School of Electronics and Information EngineeringTiangong UniversityTianjin300387China
| | - Wenhong Wang
- School of Electronics and Information EngineeringTiangong UniversityTianjin300387China
| | - Ying Liu
- School of Materials Science and EngineeringHebei University of TechnologyTianjin300130China
| | - Gang Zhang
- Institute of High Performance ComputingAgency for ScienceTechnology and Research (A*STAR)Singapore138632Singapore
| | - Xiaotian Wang
- Institute for Superconducting and Electronic Materials (ISEM)University of WollongongWollongong2500Australia
- School of Physical Science and TechnologySouthwest UniversityChongqing400715China
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3
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Yan M, Jin Y, Voloshina E, Dedkov Y. Electronic Correlations in Fe xNi yPS 3 Van der Waals Materials: Insights from Angle-Resolved Photoelectron Spectroscopy and DFT. J Phys Chem Lett 2023; 14:9774-9779. [PMID: 37882477 DOI: 10.1021/acs.jpclett.3c02688] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/27/2023]
Abstract
Recently layered antiferromagnetic materials with different magnetic orderings attract increased attention. It was found that these properties can be preserved down to the monolayer limit opening large perspectives for their applications in (opto)spintronics and sensing, however, lacking the experimental results on electronic structure studies. Here the results of angle-resolved photoelectron spectroscopy (ARPES) studies accompanied by DFT calculations for FexNiyPS3 layered van der Waals (vdW) alloys are presented, addressing the effects of electronic correlations in these materials. It is demonstrated that in the case of FePS3 the top of the valence band is formed by the hybrid Fe 3d-S 3p states and is of pure S 3p character for NiPS3, respectively, whereas for the mixed Fe-Ni-based vdW alloy the electronic structure is a sum of contributions from the parent compounds. The obtained results give a clear understanding of the nature of the insulating state in studied MPX3 materials and pave the way on their applications in different areas.
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Affiliation(s)
- Mouhui Yan
- Department of Physics, Shanghai University, 99 Shangda Road, 200444 Shanghai, P. R. China
- State Key Laboratory of Advanced Special Steel & School of Materials Science and Engineering, Shanghai University, 99 Shangda Road, 200444 Shanghai, P. R. China
| | - Yichen Jin
- Department of Physics, Shanghai University, 99 Shangda Road, 200444 Shanghai, P. R. China
- Department of Physics, Humboldt-Universität zu Berlin, 12489 Berlin, Germany
| | - Elena Voloshina
- Department of Physics, Shanghai University, 99 Shangda Road, 200444 Shanghai, P. R. China
- Institut für Chemie und Biochemie, Freie Universität Berlin, Arnimallee 22, 14195 Berlin, Germany
| | - Yuriy Dedkov
- Department of Physics, Shanghai University, 99 Shangda Road, 200444 Shanghai, P. R. China
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4
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Dai J, Wang K, Voloshina E, Dedkov Y, Paulus B. Probing Active Sites on Pristine and Defective MnPX 3 (X: S and Se) Monolayers for Electrocatalytic Water Splitting. ACS OMEGA 2023; 8:33920-33927. [PMID: 37744796 PMCID: PMC10515393 DOI: 10.1021/acsomega.3c04677] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 06/30/2023] [Accepted: 08/11/2023] [Indexed: 09/26/2023]
Abstract
The state-of-the-art density functional theory approach was used to study the structural and electronic properties of pristine and defective MnPX3 monolayers as well as their activity toward water and hydrogen evolution reaction (HER) catalytic performance. The adsorption behavior of H2O on a pristine MnPX3 structure is of physisorption nature, whereas the adsorption energy is significantly increased for the defective structures. At the same time, the water dissociation process is more energetically favorable, and the reactivity of MnPX3 is determined by the vacancy configuration. Following Nørskov's approach, the HER catalytic performance is evaluated by calculating the hydrogen adsorption free energy on the respective MnPX3 surface. Our calculation results demonstrate that defective 2D MnPX3 with low coordinated P shows significantly higher HER performance compared to the pristine counterpart.
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Affiliation(s)
- Jiajun Dai
- Institut
für Chemie und Biochemie, Freie Universität
Berlin, Arnimallee 22, Berlin 14195, Germany
| | - Kangli Wang
- Physikalisch-Chemisches
Institut, Justus-Liebig-Universität
Gießen, Heinrich-Buff-Ring
17, Gießen 35392, Germany
| | - Elena Voloshina
- Institut
für Chemie und Biochemie, Freie Universität
Berlin, Arnimallee 22, Berlin 14195, Germany
- Department
of Physics, Shanghai University, 99 Shangda Road, 200444 Shanghai, P. R. China
| | - Yuriy Dedkov
- Department
of Physics, Shanghai University, 99 Shangda Road, 200444 Shanghai, P. R. China
| | - Beate Paulus
- Institut
für Chemie und Biochemie, Freie Universität
Berlin, Arnimallee 22, Berlin 14195, Germany
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5
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Li K, Yan M, Jin Y, Jin Y, Guo Y, Voloshina E, Dedkov Y. Dual Character of the Insulating State in the van der Waals Fe 1-xNi xPS 3 Alloyed Compounds. J Phys Chem Lett 2023; 14:57-65. [PMID: 36566431 DOI: 10.1021/acs.jpclett.2c03492] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/17/2023]
Abstract
The electronic structure of the alloyed transition-metal phosphorus trichalcogenide van der Waals Fe1-xNixPS3 compounds is studied using X-ray absorption spectroscopy and resonant photoelectron spectroscopy combined with intensive density functional theory calculations. Our systematic spectroscopic and theoretical data demonstrate the strong localization of the Fe- and Ni-ions-derived electronic states that leads to the description of the spectroscopic data as belonging simultaneously to Mott-Hubbard and charge-transfer insulators. These findings reveal Fe1-xNixPS3 as unique layered compounds with dual character of the insulating state, pointing to the importance of these results for the description and understanding of the functionality of this class of materials in different applications.
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Affiliation(s)
- Kexin Li
- Department of Physics, Shanghai University, 99 Shangda Road, 200444Shanghai, P. R. China
| | - Mouhui Yan
- Department of Physics, Shanghai University, 99 Shangda Road, 200444Shanghai, P. R. China
- State Key Laboratory of Advanced Special Steel & School of Materials Science and Engineering, Shanghai University, 99 Shangda Road, Shanghai200444, P. R. China
| | - Yukun Jin
- Department of Physics, Shanghai University, 99 Shangda Road, 200444Shanghai, P. R. China
| | - Yichen Jin
- Department of Physics, Shanghai University, 99 Shangda Road, 200444Shanghai, P. R. China
| | - Yefei Guo
- Department of Physics, Shanghai University, 99 Shangda Road, 200444Shanghai, P. R. China
| | - Elena Voloshina
- Department of Physics, Shanghai University, 99 Shangda Road, 200444Shanghai, P. R. China
- Centre of Excellence ENSEMBLE3 Sp. z o.o., Wolczynska Str. 133, 01-919Warsaw, Poland
- Institut für Chemie und Biochemie, Freie Universität Berlin, Arnimallee 22, 14195Berlin, Germany
| | - Yuriy Dedkov
- Department of Physics, Shanghai University, 99 Shangda Road, 200444Shanghai, P. R. China
- Centre of Excellence ENSEMBLE3 Sp. z o.o., Wolczynska Str. 133, 01-919Warsaw, Poland
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6
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Autieri C, Cuono G, Noce C, Rybak M, Kotur KM, Agrapidis CE, Wohlfeld K, Birowska M. Limited Ferromagnetic Interactions in Monolayers of MPS 3 (M = Mn and Ni). THE JOURNAL OF PHYSICAL CHEMISTRY. C, NANOMATERIALS AND INTERFACES 2022; 126:6791-6802. [PMID: 35493696 PMCID: PMC9037203 DOI: 10.1021/acs.jpcc.2c00646] [Citation(s) in RCA: 10] [Impact Index Per Article: 3.3] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 01/26/2022] [Revised: 03/30/2022] [Indexed: 06/14/2023]
Abstract
We present a systematic study of the electronic and magnetic properties of two-dimensional ordered alloys, consisting of two representative hosts (MnPS3 and NiPS3) of transition metal phosphorus trichalcogenides doped with 3d elements. For both hosts, our DFT + U calculations are able to qualitatively reproduce the ratios and signs of all experimentally observed magnetic couplings. The relative strength of all antiferromagnetic exchange couplings, both in MnPS3 and in NiPS3, can successfully be explained using an effective direct exchange model: it reveals that the third-neighbor exchange dominates in NiPS3 due to the filling of the t2g subshell, whereas for MnPS3, the first-neighbor exchange prevails, owing to the presence of the t2g magnetism. On the other hand, the nearest neighbor ferromagnetic coupling in NiPS3 can only be explained using a more complex superexchange model and is (also) largely triggered by the absence of the t2g magnetism. For the doped systems, the DFT + U calculations revealed that magnetic impurities do not affect the magnetic ordering observed in the pure phases, and thus, in general in these systems, ferromagnetism may not be easily induced by such a kind of elemental doping. However, unlike for the hosts, the first and second (dopant-host) exchange couplings are of similar order of magnitude. This leads to frustration in the case of antiferromagnetic coupling and may be one of the reasons of the observed lower magnetic ordering temperature of the doped systems.
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Affiliation(s)
- Carmine Autieri
- International
Research Centre Magtop, Institute of Physics, Polish Academy of Sciences, Aleja Lotników 32/46, PL-02668 Warsaw, Poland
- Consiglio
Nazionale delle Ricerche CNR-SPIN, UOS Salerno, I-84084 Fisciano, Salerno, Italy
| | - Giuseppe Cuono
- International
Research Centre Magtop, Institute of Physics, Polish Academy of Sciences, Aleja Lotników 32/46, PL-02668 Warsaw, Poland
| | - Canio Noce
- Dipartimento
di Fisica “E.R. Caianiello”, Università degli Studi di Salerno, I-84084 Fisciano, Salerno, Italy
- Consiglio
Nazionale delle Ricerche CNR-SPIN, UOS Salerno, I-84084 Fisciano, Salerno, Italy
| | - Milosz Rybak
- Department
of Semiconductor Materials Engineering, Faculty of Fundamental Problems
of Technology, Wrocław University
of Science and Technology, Wybrzeże Wyspiańskiego 27, PL-50370 Wrocław, Poland
| | - Kamila M. Kotur
- Faculty
of Physics, University of Warsaw, Pasteura 5, PL-02093 Warsaw, Poland
| | | | - Krzysztof Wohlfeld
- Faculty
of Physics, University of Warsaw, Pasteura 5, PL-02093 Warsaw, Poland
| | - Magdalena Birowska
- Faculty
of Physics, University of Warsaw, Pasteura 5, PL-02093 Warsaw, Poland
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7
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Wu Z, Xu S, Zhou Y, Guo Q, Dedkov Y, Voloshina E. Adsorption of Water Molecules on Pristine and Defective NiPX
3
(X: S, Se) Monolayers. ADVANCED THEORY AND SIMULATIONS 2021. [DOI: 10.1002/adts.202100182] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/10/2022]
Affiliation(s)
- Zhicheng Wu
- Department of Physics Shanghai University Shanghai, Shangda Road 99 Shanghai 200444 China
| | - Sifan Xu
- Department of Physics Shanghai University Shanghai, Shangda Road 99 Shanghai 200444 China
| | - Yong Zhou
- Department of Physics Shanghai University Shanghai, Shangda Road 99 Shanghai 200444 China
| | - Qilin Guo
- Department of Physics Shanghai University Shanghai, Shangda Road 99 Shanghai 200444 China
| | - Yuriy Dedkov
- Department of Physics Shanghai University Shanghai, Shangda Road 99 Shanghai 200444 China
- Centre of Excellence ENSEMBLE3 Sp. z o. o. ul. Wolczynska 133 Warsaw 01‐919 Poland
- Institut für Chemie und Biochemie Freie Universität BerlinArnimallee 22 Berlin 14195 Germany
| | - Elena Voloshina
- Department of Physics Shanghai University Shanghai, Shangda Road 99 Shanghai 200444 China
- Centre of Excellence ENSEMBLE3 Sp. z o. o. ul. Wolczynska 133 Warsaw 01‐919 Poland
- Institut für Chemie und Biochemie Freie Universität BerlinArnimallee 22 Berlin 14195 Germany
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8
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Yan M, Jin Y, Wu Z, Tsaturyan A, Makarova A, Smirnov D, Voloshina E, Dedkov Y. Correlations in the Electronic Structure of van der Waals NiPS 3 Crystals: An X-ray Absorption and Resonant Photoelectron Spectroscopy Study. J Phys Chem Lett 2021; 12:2400-2405. [PMID: 33661001 DOI: 10.1021/acs.jpclett.1c00394] [Citation(s) in RCA: 11] [Impact Index Per Article: 2.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
The electronic structure of high-quality van der Waals NiPS3 crystals was studied using near-edge X-ray absorption spectroscopy (NEXAFS) and resonant photoelectron spectroscopy (ResPES) in combination with density functional theory (DFT) approach. The experimental spectroscopic methods, being element specific, allow one to discriminate between atomic contributions in the valence and conduction band density of states and give direct comparison with the results of DFT calculations. Analysis of the NEXAFS and ResPES data allows one to identify the NiPS3 material as a charge-transfer insulator. Obtained spectroscopic and theoretical data are very important for the consideration of possible correlated-electron phenomena in such transition-metal layered materials, where the interplay between different degrees of freedom for electrons defines their electronic properties, allowing one to understand their optical and transport properties and to propose further possible applications in electronics, spintronics, and catalysis.
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Affiliation(s)
- Mouhui Yan
- Department of Physics, Shanghai University, 200444 Shanghai, China
| | - Yichen Jin
- Department of Physics, Shanghai University, 200444 Shanghai, China
| | - Zhicheng Wu
- Department of Physics, Shanghai University, 200444 Shanghai, China
| | - Arshak Tsaturyan
- Institute of Physical and Organic Chemistry, Southern Federal University, 344090 Rostov on Don, Russia
| | - Anna Makarova
- Institut für Chemie und Biochemie, Freie Universität Berlin, Arnimallee 22, 14195 Berlin, Germany
| | - Dmitry Smirnov
- Institut für Festkörper-und Materialphysik, Technische Universität Dresden, 01069 Dresden, Germany
| | - Elena Voloshina
- Department of Physics, Shanghai University, 200444 Shanghai, China
- Institut für Chemie und Biochemie, Freie Universität Berlin, Arnimallee 22, 14195 Berlin, Germany
| | - Yuriy Dedkov
- Department of Physics, Shanghai University, 200444 Shanghai, China
- Institut für Chemie und Biochemie, Freie Universität Berlin, Arnimallee 22, 14195 Berlin, Germany
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