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Zhang Y, Feng Y, Zhang C, He G, Yu J, Zhu H. Dynamic Exciton Polarons Enabling Dual-Mode White-Light Emission with Tunable Color Temperatures in 2D Hybrid Lead Bromides. J Am Chem Soc 2025; 147:17152-17160. [PMID: 40329639 DOI: 10.1021/jacs.5c02446] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 05/08/2025]
Abstract
White-light emission (WLE) with tunable chromaticity and correlated color temperature (CCT) is critical for lighting, display, and sensing applications. While recent two-dimensional (2D) lead halide perovskites have emerged as promising single-component WLE materials, their application is hindered by constrained and low CCT due to dominant localized exciton (LE) emission. Here, we report a dynamic exciton polaron mechanism in ⟨100⟩-oriented 2D lead bromides, (CnH2n+4N2)PbBr4 (n = 5, 7, 9, 11), enabling intrinsic dual-mode WLE with widely tunable CCT. By combining ultrafast transient absorption spectroscopy and thermodynamic analyses, we reveal a double-well potential energy landscape driving the dynamic equilibrium between band-edge exciton (BE) and self-trapped LE states, and thus the formation of a dynamic exciton polaron. By elongating the ligand from n = 5 to 11, the self-trapping barrier decreases from 23.3 ± 1.3 to 10.1 ± 0.8 meV, and the trapping depth increases from 3.8 ± 0.4 to 14.7 ± 1.8 meV due to enhanced exciton-phonon coupling, which shifts the BE/LE emission ratio and tunes CCT from 21 000 K (bluish cold white) to 5100 K (reddish warm white). The dynamic exciton polaron with correlated BE and LE exhibits matched radiative lifetimes, ensuring stable dual-mode WLE without spectral distortion. Our work establishes that the dynamic exciton polaron, combined with ligand engineering, acts as a general principle for designing single-component multimode WLE materials with tailored chromatic properties, advancing their potential in efficient lighting and multifunctional optoelectronics.
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Affiliation(s)
- Yao Zhang
- State Key Laboratory of Extreme Photonics and Instrumentation, Zhejiang Key Laboratory of Excited-State Energy Conversion and Energy Storage, Department of Chemistry, Zhejiang University, Hangzhou, Zhejiang 310058, China
- ZJU-Hangzhou Global Scientific and Technological Innovation Center, Zhejiang University, Hangzhou, Zhejiang 311200, China
| | - Yuhang Feng
- State Key Laboratory of Extreme Photonics and Instrumentation, Zhejiang Key Laboratory of Excited-State Energy Conversion and Energy Storage, Department of Chemistry, Zhejiang University, Hangzhou, Zhejiang 310058, China
- ZJU-Hangzhou Global Scientific and Technological Innovation Center, Zhejiang University, Hangzhou, Zhejiang 311200, China
| | - Caiwei Zhang
- State Key Laboratory of Extreme Photonics and Instrumentation, Zhejiang Key Laboratory of Excited-State Energy Conversion and Energy Storage, Department of Chemistry, Zhejiang University, Hangzhou, Zhejiang 310058, China
- ZJU-Hangzhou Global Scientific and Technological Innovation Center, Zhejiang University, Hangzhou, Zhejiang 311200, China
| | - Guohua He
- State Key Laboratory of Extreme Photonics and Instrumentation, Zhejiang Key Laboratory of Excited-State Energy Conversion and Energy Storage, Department of Chemistry, Zhejiang University, Hangzhou, Zhejiang 310058, China
- ZJU-Hangzhou Global Scientific and Technological Innovation Center, Zhejiang University, Hangzhou, Zhejiang 311200, China
| | - Jinyang Yu
- State Key Laboratory of Silicon and Advanced Semiconductor Materials, Department of Polymer Science and Engineering, Zhejiang University, Hangzhou 310058, China
| | - Haiming Zhu
- State Key Laboratory of Extreme Photonics and Instrumentation, Zhejiang Key Laboratory of Excited-State Energy Conversion and Energy Storage, Department of Chemistry, Zhejiang University, Hangzhou, Zhejiang 310058, China
- ZJU-Hangzhou Global Scientific and Technological Innovation Center, Zhejiang University, Hangzhou, Zhejiang 311200, China
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2
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Fu Y, Lohan H, Righetto M, Huang YT, Kavanagh SR, Cho CW, Zelewski SJ, Woo YW, Demetriou H, McLachlan MA, Heutz S, Piot BA, Scanlon DO, Rao A, Herz LM, Walsh A, Hoye RLZ. Structural and electronic features enabling delocalized charge-carriers in CuSbSe 2. Nat Commun 2025; 16:65. [PMID: 39747002 PMCID: PMC11697385 DOI: 10.1038/s41467-024-55254-2] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/13/2023] [Accepted: 12/04/2024] [Indexed: 01/04/2025] Open
Abstract
Inorganic semiconductors based on heavy pnictogen cations (Sb3+ and Bi3+) have gained significant attention as potential nontoxic and stable alternatives to lead-halide perovskites for solar cell applications. A limitation of these novel materials, which is being increasingly commonly found, is carrier localization, which substantially reduces mobilities and diffusion lengths. Herein, CuSbSe2 is investigated and discovered to have delocalized free carriers, as shown through optical pump terahertz probe spectroscopy and temperature-dependent mobility measurements. Using a combination of theory and experiment, the critical enabling factors are found to be: 1) having a layered structure, which allows distortions to the unit cell during the propagation of an acoustic wave to be relaxed in the interlayer gaps, with minimal changes in bond length, thus limiting deformation potentials; 2) favourable quasi-bonding interactions across the interlayer gap giving rise to higher electronic dimensionality; 3) Born effective charges not being anomalously high, which, combined with the small bandgap ( ≤ 1.2 eV), result in a low ionic contribution to the dielectric constant compared to the electronic contribution, thus reducing the strength of Fröhlich coupling. These insights can drive forward the rational discovery of perovskite-inspired materials that can avoid carrier localization.
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Affiliation(s)
- Yuchen Fu
- Inorganic Chemistry Laboratory, University of Oxford, South Parks Road, Oxford, OX1 3QR, United Kingdom
| | - Hugh Lohan
- Inorganic Chemistry Laboratory, University of Oxford, South Parks Road, Oxford, OX1 3QR, United Kingdom
- Department of Materials and Centre for Processable Electronics, Imperial College London, Exhibition Road, London, SW7 2AZ, United Kingdom
| | - Marcello Righetto
- Department of Physics, University of Oxford, Clarendon Laboratory, Parks Road, Oxford, OX1 3PU, United Kingdom
| | - Yi-Teng Huang
- Inorganic Chemistry Laboratory, University of Oxford, South Parks Road, Oxford, OX1 3QR, United Kingdom
- Cavendish Laboratory, University of Cambridge, JJ Thomson Ave, Cambridge, CB3 0HE, United Kingdom
| | - Seán R Kavanagh
- Harvard University Center for the Environment, Cambridge, Massachusetts, 02138, USA
| | - Chang-Woo Cho
- Laboratoire National des Champs Magnétiques Intenses, CNRS, LNCMI, Université Grenoble Alpes, Université Toulouse 3, INSA Toulouse, EMFL, F-38042, Grenoble, France
- Department of Physics, Chungnam National University, Daejeon, 34134, Republic of Korea
| | - Szymon J Zelewski
- Cavendish Laboratory, University of Cambridge, JJ Thomson Ave, Cambridge, CB3 0HE, United Kingdom
- Department of Experimental Physics, Faculty of Fundamental Problems of Technology, Wrocław University of Science and Technology, Wybrzeże Wyspiańskiego 27, 50-370, Wrocław, Poland
| | - Young Won Woo
- Department of Materials and Centre for Processable Electronics, Imperial College London, Exhibition Road, London, SW7 2AZ, United Kingdom
- Department of Materials Science and Engineering, Yonsei University, Seoul, 03722, Republic of Korea
| | - Harry Demetriou
- Department of Materials and Centre for Processable Electronics, Imperial College London, Exhibition Road, London, SW7 2AZ, United Kingdom
- London Centre for Nanotechnology, Imperial College London, Prince Consort Road, London, SW7 2AZ, United Kingdom
| | - Martyn A McLachlan
- Department of Materials, Imperial College London, Molecular Sciences Research Hub, Wood Lane, W12 0BZ, London, United Kingdom
| | - Sandrine Heutz
- Department of Materials and Centre for Processable Electronics, Imperial College London, Exhibition Road, London, SW7 2AZ, United Kingdom
- London Centre for Nanotechnology, Imperial College London, Prince Consort Road, London, SW7 2AZ, United Kingdom
| | - Benjamin A Piot
- Laboratoire National des Champs Magnétiques Intenses, CNRS, LNCMI, Université Grenoble Alpes, Université Toulouse 3, INSA Toulouse, EMFL, F-38042, Grenoble, France
| | - David O Scanlon
- School of Chemistry, University of Birmingham, Birmingham, B15 2TT, United Kingdom
| | - Akshay Rao
- Cavendish Laboratory, University of Cambridge, JJ Thomson Ave, Cambridge, CB3 0HE, United Kingdom
| | - Laura M Herz
- Department of Physics, University of Oxford, Clarendon Laboratory, Parks Road, Oxford, OX1 3PU, United Kingdom
- Institute for Advanced Study, Technical University of Munich, Lichtenbergstrasse 2a, D-85748, Garching, Germany
| | - Aron Walsh
- Department of Materials and Centre for Processable Electronics, Imperial College London, Exhibition Road, London, SW7 2AZ, United Kingdom
| | - Robert L Z Hoye
- Inorganic Chemistry Laboratory, University of Oxford, South Parks Road, Oxford, OX1 3QR, United Kingdom.
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Yu J, Wang Y, Zhou Y, Fang W, Liu B, Xing J. Intrinsic Self-Trapped Excitons in Graphitic Carbon Nitride. NANO LETTERS 2024; 24:4439-4446. [PMID: 38498723 DOI: 10.1021/acs.nanolett.4c00238] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 03/20/2024]
Abstract
Graphitic carbon nitrides (g-C3N4) as low-cost, chemically stable, and ecofriendly layered semiconductors have attracted rapidly growing interest in optoelectronics and photocatalysis. However, the nature of photoexcited carriers in g-C3N4 is still controversial, and an independent charge-carrier picture based on the band theory is commonly adopted. Here, by performing transient spectroscopy studies, we show characteristics of self-trapped excitons (STEs) in g-C3N4 nanosheets including broad trapped exciton-induced absorption, picosecond exciton trapping without saturation at high photoexcitation density, and transient STE-induced stimulated emissions. These features, together with the ultrafast exciton trapping polarization memory, strongly suggest that STEs intrinsically define the nature of the photoexcited states in g-C3N4. These observations provide new insights into the fundamental photophysics of carbon nitrides, which may enlighten novel designs to boost energy conversion efficiency.
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Affiliation(s)
- Junhong Yu
- LUMINOUS! Centre of Excellence for Semiconductor Lighting and Displays, School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue 639798, Singapore
| | - Yunhu Wang
- Key Laboratory of Eco-Chemical Engineering, Ministry of Education, College of Chemistry and Molecular Engineering, Qingdao University of Science & Technology, 266042 Qingdao, China
| | - Yubu Zhou
- School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou 510275, China
| | - Wenhui Fang
- School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou 510275, China
| | - Baiquan Liu
- School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou 510275, China
| | - Jun Xing
- Key Laboratory of Eco-Chemical Engineering, Ministry of Education, College of Chemistry and Molecular Engineering, Qingdao University of Science & Technology, 266042 Qingdao, China
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4
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Zhang Y, Zhu L, Yang Z, Tao W, Chen Z, Li T, Lei H, Li C, Wang L, Tian W, Li Z, Shang H, Zhu H. Transient Photoinduced Pb 2+ Disproportionation for Exciton Self-Trapping and Broadband Emission in Low-Dimensional Lead Halide Perovskites. J Am Chem Soc 2024; 146:7831-7838. [PMID: 38445480 DOI: 10.1021/jacs.4c01115] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 03/07/2024]
Abstract
Low-dimensional lead halide perovskites with broadband emission hold great promise for single-component white-light-emitting (WLE) devices. The origin of their broadband emission has been commonly attributed to self-trapped excitons (STEs) composed of localized electronic polarization with a distorted lattice. Unfortunately, the exact electronic and structural nature of the STE species in these WLE materials remains elusive, hindering the rational design of high-efficiency WLE materials. In this study, by combining ultrafast transient absorption spectroscopy and ab initio calculations, we uncover surprisingly similar STE features in two prototypical low dimensional WLE perovskite single crystals: 1D (DMEDA)PbBr4 and 2D (EDBE)PbBr4, despite of their different dimensionalities. Photoexcited excitons rapidly localize to intrinsic STEs within ∼250 fs, contributing to the white light emission. Crucially, STEs in both systems exhibit characteristic absorption features akin to those of Pb+ and Pb3+. Further atomic level theoretical simulations confirm photoexcited electrons and holes are localized on the Pb2+ site to form Pb+- and Pb3+-like species, resembling transient photoinduced Pb2+ disproportionation. This study provides conclusive evidence on the key excited state species for exciton self-trapping and broadband emission in low dimensional lead halide WLE perovskites and paves the way for the rational design of high-efficiency WLE materials.
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Affiliation(s)
- Yao Zhang
- State Key Laboratory of Modern Optical Instrument, Key Laboratory of Excited-State Materials of Zhejiang Province, Department of Chemistry, Zhejiang University, Hangzhou, Zhejiang 310027, China
- ZJU-Hangzhou Global Scientific and Technological Innovation Center, Hangzhou, Zhejiang 311200, China
| | - Leilei Zhu
- Key Laboratory of Precision and Intelligent Chemistry, University of Science and Technology of China, Hefei, Anhui 230026, China
| | - Zhaoxia Yang
- State Key Laboratory of Molecular Reaction Dynamics, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, Dalian, Liaoning 116023, China
- University of Chinese Academy of Sciences, Beijing 100049, China
| | - Weijian Tao
- State Key Laboratory of Modern Optical Instrument, Key Laboratory of Excited-State Materials of Zhejiang Province, Department of Chemistry, Zhejiang University, Hangzhou, Zhejiang 310027, China
| | - Zeng Chen
- State Key Laboratory of Modern Optical Instrument, Key Laboratory of Excited-State Materials of Zhejiang Province, Department of Chemistry, Zhejiang University, Hangzhou, Zhejiang 310027, China
| | - Tianjing Li
- State Key Laboratory of Modern Optical Instrument, Key Laboratory of Excited-State Materials of Zhejiang Province, Department of Chemistry, Zhejiang University, Hangzhou, Zhejiang 310027, China
- ZJU-Hangzhou Global Scientific and Technological Innovation Center, Hangzhou, Zhejiang 311200, China
| | - Haixin Lei
- State Key Laboratory of Modern Optical Instrument, Key Laboratory of Excited-State Materials of Zhejiang Province, Department of Chemistry, Zhejiang University, Hangzhou, Zhejiang 310027, China
- ZJU-Hangzhou Global Scientific and Technological Innovation Center, Hangzhou, Zhejiang 311200, China
| | - Congzhou Li
- Key Laboratory of Flexible Electronics and Institute of Advanced Materials, School of Physical and Mathematical Sciences, Nanjing Tech University, Nanjing, Jiangsu 211816, China
| | - Lin Wang
- Key Laboratory of Flexible Electronics and Institute of Advanced Materials, School of Physical and Mathematical Sciences, Nanjing Tech University, Nanjing, Jiangsu 211816, China
| | - Wenming Tian
- State Key Laboratory of Molecular Reaction Dynamics, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, Dalian, Liaoning 116023, China
| | - Zhenyu Li
- Key Laboratory of Precision and Intelligent Chemistry, University of Science and Technology of China, Hefei, Anhui 230026, China
- Hefei National Laboratory, University of Science and Technology of China, Hefei 230088, China
| | - Honghui Shang
- Key Laboratory of Precision and Intelligent Chemistry, University of Science and Technology of China, Hefei, Anhui 230026, China
| | - Haiming Zhu
- State Key Laboratory of Modern Optical Instrument, Key Laboratory of Excited-State Materials of Zhejiang Province, Department of Chemistry, Zhejiang University, Hangzhou, Zhejiang 310027, China
- ZJU-Hangzhou Global Scientific and Technological Innovation Center, Hangzhou, Zhejiang 311200, China
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5
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Li X, Wang A, Chen H, Tao W, Chen Z, Zhang C, Li Y, Zhang Y, Shang H, Weng YX, Zhao J, Zhu H. Ultrafast Spontaneous Localization of a Jahn-Teller Exciton Polaron in Two-Dimensional Semiconducting CrI 3 by Symmetry Breaking. NANO LETTERS 2022; 22:8755-8762. [PMID: 36305523 DOI: 10.1021/acs.nanolett.2c03689] [Citation(s) in RCA: 9] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/16/2023]
Abstract
The excited state species and properties in low-dimensional semiconductors can be completely redefined by electron-lattice coupling or a polaronic effect. Here, by combining ultrafast broadband pump-probe spectroscopy and first-principles GW and Bethe-Salpeter equation calculations, we show semiconducting CrI3 as a prototypical 2D polaronic system with characteristic Jahn-Teller exciton polaron induced by symmetry breaking. A photogenerated electron and hole in CrI3 localize spontaneously in ∼0.9 ps and pair geminately to a Jahn-Teller exciton polaron with elongated Cr-I octahedra, large binding energy, and an unprecedentedly small exciton-exciton annihilation rate constant (∼10-20 cm3 s-1). Coherent phonon dynamics indicates the localization is mainly triggered by the coherent nuclear vibration of the I-Cr-I out-of-plane stretch mode at 128.5 ± 0.1 cm-1. The excited state Jahn-Teller exciton polaron in CrI3 broadens the realm of 2D polaron systems and reveals the decisive role of coupled electron-lattice motion on excited state properties and exciton physics in 2D semiconductors.
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Affiliation(s)
- Xufeng Li
- State Key Laboratory of Modern Optical Instrumentation, Key Laboratory of Excited-State Materials of Zhejiang Province, Department of Chemistry, Zhejiang University, Hangzhou, Zhejiang310027, China
| | - Aolei Wang
- Department of Physics, CAS Key Laboratory of Strongly-Coupled Quantum Matter Physics, and ICQD/Hefei National Laboratory for Physical Sciences at Microscale, University of Science and Technology of China, Hefei, Anhui230026, China
| | - Hailong Chen
- Beijing National Laboratory for Condensed Matter Physics, The Laboratory of Soft Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing100190, China
| | - Weijian Tao
- State Key Laboratory of Modern Optical Instrumentation, Key Laboratory of Excited-State Materials of Zhejiang Province, Department of Chemistry, Zhejiang University, Hangzhou, Zhejiang310027, China
| | - Zeng Chen
- State Key Laboratory of Modern Optical Instrumentation, Key Laboratory of Excited-State Materials of Zhejiang Province, Department of Chemistry, Zhejiang University, Hangzhou, Zhejiang310027, China
| | - Chi Zhang
- State Key Laboratory of Modern Optical Instrumentation, Key Laboratory of Excited-State Materials of Zhejiang Province, Department of Chemistry, Zhejiang University, Hangzhou, Zhejiang310027, China
| | - Yujie Li
- State Key Laboratory of Modern Optical Instrumentation, Key Laboratory of Excited-State Materials of Zhejiang Province, Department of Chemistry, Zhejiang University, Hangzhou, Zhejiang310027, China
| | - Yiran Zhang
- State Key Laboratory of Modern Optical Instrumentation, Key Laboratory of Excited-State Materials of Zhejiang Province, Department of Chemistry, Zhejiang University, Hangzhou, Zhejiang310027, China
| | - Honghui Shang
- Department of Physics, CAS Key Laboratory of Strongly-Coupled Quantum Matter Physics, and ICQD/Hefei National Laboratory for Physical Sciences at Microscale, University of Science and Technology of China, Hefei, Anhui230026, China
| | - Yu-Xiang Weng
- Beijing National Laboratory for Condensed Matter Physics, The Laboratory of Soft Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing100190, China
| | - Jin Zhao
- Department of Physics, CAS Key Laboratory of Strongly-Coupled Quantum Matter Physics, and ICQD/Hefei National Laboratory for Physical Sciences at Microscale, University of Science and Technology of China, Hefei, Anhui230026, China
| | - Haiming Zhu
- State Key Laboratory of Modern Optical Instrumentation, Key Laboratory of Excited-State Materials of Zhejiang Province, Department of Chemistry, Zhejiang University, Hangzhou, Zhejiang310027, China
- ZJU-Hangzhou Global Scientific and Technological Innovation Center, Hangzhou, Zhejiang311200, China
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6
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Wang X, Ganose AM, Kavanagh SR, Walsh A. Band versus Polaron: Charge Transport in Antimony Chalcogenides. ACS ENERGY LETTERS 2022; 7:2954-2960. [PMID: 36120662 PMCID: PMC9469203 DOI: 10.1021/acsenergylett.2c01464] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 06/27/2022] [Accepted: 08/09/2022] [Indexed: 06/15/2023]
Abstract
Antimony sulfide (Sb2S3) and selenide (Sb2Se3) are emerging earth-abundant absorbers for photovoltaic applications. Solar cell performance depends strongly on charge-carrier transport properties, but these remain poorly understood in Sb2X3 (X = S, Se). Here we report band-like transport in Sb2X3, determined by investigating the electron-lattice interaction and theoretical limits of carrier mobility using first-principles density functional theory and Boltzmann transport calculations. We demonstrate that transport in Sb2X3 is governed by large polarons with moderate Fröhlich coupling constants (α ≈ 2), large polaron radii (extending over several unit cells), and high carrier mobility (an isotropic average of >10 cm2 V-1 s-1 for both electrons and holes). The room-temperature mobility is intrinsically limited by scattering from polar phonon modes and is further reduced in highly defective samples. Our study confirms that the performance of Sb2X3 solar cells is not limited by intrinsic self-trapping.
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Affiliation(s)
- Xinwei Wang
- Department
of Materials, Imperial College London, Exhibition Road, London SW7 2AZ, U.K.
| | - Alex M. Ganose
- Department
of Materials, Imperial College London, Exhibition Road, London SW7 2AZ, U.K.
| | - Seán R. Kavanagh
- Department
of Materials, Imperial College London, Exhibition Road, London SW7 2AZ, U.K.
- Thomas
Young Centre and Department of Chemistry, University College London, 20 Gordon Street, London WC1H 0AJ, U.K.
| | - Aron Walsh
- Department
of Materials, Imperial College London, Exhibition Road, London SW7 2AZ, U.K.
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