Spin Ordering Induced Broadband Photodetection Based on Two-Dimensional Magnetic Semiconductor α-MnSe

The Multiferroic, Magnetic Exchange Bias Effect, and Photodetection Multifunction Characteristics in MnSe/Ga0.6Fe1.4O3 Heterostructure

Artificial heterostructures are typically created by layering distinct materials, thereby giving rise to unique characteristics different from their individual components. Herein, two-dimensional α-MnSe nanosheets with a non-layered structure were fabricated on Ga0.6Fe1.4O3 (GFO) films. The superior crystalline properties of MnSe/GFO heterostructures were confirmed through structural and morphological analyses. The remanent polarization is around 1.5 μC/cm2 and the leakage current density can reach 2 × 10-3 A/cm2 under 4 V. In addition, the piezo-response force microscopy amplitude and phase images further supported the ferroelectric property. The significant improvement of coercive field and saturated magnetization, along with the antiparallel signals of Mn and Fe ions observed through synchrotron X-ray analyses, suggest the presence of magnetic interaction within the MnSe/GFO heterostructure. Finally, the excellent photodetector with a photo detectivity of 6.3 × 108 Jones and a photoresponsivity of 2.8 × 10-3 A·W-1 was obtained under 532 nm in the MnSe/GFO heterostructure. The characteristics of this heterostructure, which include multiferroic, magnetic exchange bias effect, and photodetection capabilities, are highly beneficial for multifunctional devices.

Magnetic exchange coupling and photodetection multifunction characteristics of an MnSe/LaMnO3 heterostructure

Artificial heterostructures are often realized by stacking different materials to present new emerging properties that are not exhibited by their individual constituents. In this work, non-layered two-dimensional α-MnSe nanosheets were transferred onto LaMnO3 (LMO) films to obtain a multifunctional heterostructure. The high crystal quality of the MnSe/LMO heterostructure was revealed by X-ray diffraction, Raman spectroscopy, and scanning electron microscopy measurements. The enhancement of the saturated magnetization and coercive field and synchrotron X-ray measurements indicated the magnetic exchange coupling effect present in this MnSe/LMO heterostructure. The exchange bias field and coercive field reached 400 Oe and 1013 Oe under a positive 5k Oe field-cooling process. Thus, an outstanding photodetector with photoresponsivity of 4.1 × 10-4 A W-1 and photo detectivity of 2.6 × 108 jones was obtained with a luminescence of 532 nm for this MnSe/LMO heterostructure. The multifunction characteristics of magnetic exchange coupling and photodetection in this heterostructure are very useful for next-generation devices.

Low-Symmetry 2D t-InTe for Polarization-Sensitive UV-Vis-NIR Photodetection

Polarization-sensitive photodetection grounded on low-symmetry 2D materials has immense potential in improving detection accuracy, realizing intelligent detection, and enabling multidimensional visual perception, which has promising application prospects in bio-identification, optical communications, near-infrared imaging, radar, military, and security. However, the majority of the reported polarized photodetection are limited by UV-vis response range and low anisotropic photoresponsivity factor, limiting the achievement of high-performance anisotropic photodetection. Herein, 2D t-InTe crystal is introduced into anisotropic systems and developed to realize broadband-response and high-anisotropy-ratio polarized photodetection. Stemming from its narrow band gap and intrinsic low-symmetry lattice characteristic, 2D t-InTe-based photodetector exhibits a UV-vis-NIR broadband photoresponse and significant photoresponsivity anisotropy behavior, with an exceptional in-plane anisotropic factor of 1.81@808 nm laser, surpassing the performance of most reported 2D counterparts. This work expounds the anisotropic structure-activity relationship of 2D t-InTe crystal, and identifies 2D t-InTe as a prospective candidate for high-performance polarization-sensitive optoelectronics, laying the foundation for future multifunctional device applications.

High-Performance Broadband Image Sensing Photodetector Based on MnTe/WS2 van der Waals Epitaxial Heterostructures

Two-dimensional transition metal dichalcogenide (TMDC) heterostructure is receiving considerable attention due to its novel electronic, optoelectronic, and spintronic devices with design-oriented and functional features. However, direct design and synthesis of high-quality TMDC/MnTe heterostructures remain difficult, which severely impede further investigations of semiconductor/magnetic semiconductor devices. Herein, the synthesis of high-quality vertically stacked WS2/MnTe heterostructures is realized via a two-step chemical vapor deposition method. Raman, photoluminescence, and scanning transmission electron microscopy characterizations reveal the high-quality and atomically sharp interfaces of the WS2/MnTe heterostructure. WS2/MnTe-based van der Waals field effect transistors demonstrate high rectification behavior with rectification ratio up to 106, as well as a typical p-n electrical transport characteristic. Notably, the fabricated WS2/MnTe photodetector exhibits sensitive and broadband photoresponse ranging from UV to NIR with a maximum responsivity of 1.2 × 103 A/W, a high external quantum efficiency of 2.7 × 105%, and fast photoresponse time of ∼50 ms. Moreover, WS2/MnTe heterostructure photodetectors possess a broadband image sensing capability at room temperature, suggesting potential applications in next-generation high-performance and broadband image sensing photodetectors.

Broadband Polarization-Sensitive Photodetection of Magnetic Semiconducting MnTe Nanoribbons

2D materials with low symmetry are explored in recent years because of their anisotropic advantage in polarization-sensitive photodetection. Herein the controllably grown hexagonal magnetic semiconducting α-MnTe nanoribbons are reported with a highly anisotropic (100) surface and their high sensitivity to polarization in a broadband photodetection, whereas the hexagonal structure is highly symmetric. The outstanding photoresponse of α-MnTe nanoribbons occurs in a broadband range from ultraviolet (UV, 360 nm) to near infrared (NIR, 914 nm) with short response times of 46 ms (rise) and 37 ms (fall), excellent environmental stability, and repeatability. Furthermore, due to highly anisotropic (100) surface, the α-MnTe nanoribbons as photodetector exhibit attractive sensitivity to polarization and high dichroic ratios of up to 2.8 under light illumination of UV-to-NIR wavelengths. These results demonstrate that 2D magnetic semiconducting α-MnTe nanoribbons provide a promising platform to design the next-generation polarization-sensitive photodetectors in a broadband range.