Manipulating the Migration of Iodine Ions via Reverse-Biasing for Boosting Photovoltaic Performance of Perovskite Solar Cells

Iodide Vacancy Defects Clustering in Pairs Rather Than in Isolation in a Lead Iodide Perovskite: Identification, Origin, and Implications

Iodide (I-) vacancy defects are strongly related to the stability of perovskite optoelectronic devices. The I- vacancy in lead iodide perovskites is normally considered to exist in the form of a single isolated defect. However, we determined that the I- vacancies cluster in pairs in specific ways in the typical perovskite of tetragonal CsPbI3. This I- vacancy-vacancy dimer is energetically more favorable than two isolated I- monovacancies. It breaks the symmetry of the Pb-I octahedron, resulting in lattice distortion. Its origin lies in the special lattice distortion effect caused by the electron orbital interaction of the perovskite material. Furthermore, the I- vacancy-vacancy dimer and the associated lattice distortion increase the carrier lifetime by 1.3 times compared to that of the system with two isolated I- monovacancies, but they also compromise its structural stability. This new insight into the I- vacancy defect will enhance our understanding of perovskite optoelectronic devices.

Multi-Functional Regulation on Buried Interface for Achieving Efficient Triple-Cation Perovskite Solar Cells

Mixed-cation perovskite solar cells (PSCs) have attracted much attention because of the advantages of suitable bandgap and stability. It is still a challenge to rationally design and modify the perovskite/tin oxide (SnO2 ) heterogeneous interface for achieving highly efficient and stable PSCs. Herein, a strategy of one-stone-for-three-birds is proposed to achieve multi-functional interface regulation via introducing N-Chlorosuccinimide (NCS) into the solution of SnO2 : i) C═O functional group in NCS can induces strong binding affinity to uncoordinated defects (oxygen vacancies, free lead ions, etc) at the buried interface and passivate them; ii) incomplete in situ hydrolysis reactions can occur spontaneously and adjust the pH value of the SnO2 solution to achieve a more matchable energy level; iii) effectively releasing the residual stress of the underlying perovskite. As a result, a champion power conversion efficiency (PCE) of 24.74% is achieved with a device structure of ITO/SnO2 /Perovskite/Spiro-OMeTAD/Ag, which is one of the highest values for cesium-formamidinium-methylammonium (CsFAMA) triple cation PSCs. Furthermore, the device without encapsulation can sustain 94.6% of its initial PCE after the storage at room temperature and relative humidity (RH) of 20% for 40 days. The research provides a versatile way to manipulate buried interface for achieving efficient and stable PSCs.

Mutually Tuned Dual Additive Engineering Synergistically Enhances the Photovoltaic Performance of Tin-Based Perovskite Solar Cells

Tin-based perovskite solar cells (T-PSCs) have become the star photovoltaic products in recent years due to their low environmental toxicity and superior photovoltaic performance. However, the easy oxidation of Sn2+ and the energy level mismatch between the perovskite film and charge transport layer limit its efficiency. In order to regulate the microstructure and photoelectric properties of tin-based perovskite films to enhance the efficiency and stability of T-PSCs, guanidinium bromide (GABr) and organic Lewis-based additive methylamine cyanate (MAOCN) are introduced into the FA0.9PEA0.1SnI3-based perovskite precursor. A series of characterizations show that the interactions between additive molecules and perovskite mutually reconcile to improve the photovoltaic performance of T-PSCs. The introduction of GABr can adjust the band gap of the perovskite film and energy level alignment of T-PSCs. They significantly increase the open-circuit voltage (Voc). The MAOCN material can form hydrogen bonds with SnI2 in the precursor, which can inhibit the oxidation of Sn2+ and significantly improve the short-circuit current density (Jsc). The synergistic modulation of the dual additives reduces the trap-state density and improves photovoltaic performance, resulting in an increased champion efficiency of 9.34 for 5.22% of the control PSCs. The unencapsulated T-PSCs with GABr and MAOCN dual additives prepared in the optimized process can retain more than 110% of their initial efficiency after aging for 1750 h in a nitrogen glovebox, but the control PSCs maintain only 50% of their initial efficiency kept in the same conditions. This work provides a new perspective to further improve the efficiency and stability of T-PSCs.

Defect Passivation Scheme toward High-Performance Halide Perovskite Solar Cells

Organic-inorganic halide perovskite solar cells (PSCs) have attracted much attention in recent years due to their simple manufacturing process, low cost, and high efficiency. So far, all efficient organic-inorganic halide PSCs are mainly made of polycrystalline perovskite films. There are transmission barriers and high-density defects on the surface, interface, and grain boundary of the films. Among them, the deep-level traps caused by specific charged defects are the main non-radiative recombination centers, which is the most important factor in limiting the photoelectric conversion efficiency of PSCs devices to the Shockley-Queisser (S-Q) theoretical efficiency limit. Therefore, it is imperative to select appropriate passivation materials and passivation strategies to effectively eliminate defects in perovskite films to improve their photovoltaic performance and stability. There are various passivation strategies for different components of PSCs, including interface engineering, additive engineering, antisolvent engineering, dopant engineering, etc. In this review, we summarize a large number of defect passivation work to illustrate the latest progress of different types of passivators in regulating the morphology, grain boundary, grain size, charge recombination, and defect density of states of perovskite films. In addition, we discuss the inherent defects of key materials in carrier transporting layers and the corresponding passivation strategies to further optimize PSCs components. Finally, some perspectives on the opportunities and challenges of PSCs in future development are highlighted.