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For: Ngo TD, Huynh T, Jung H, Ali F, Jeon J, Choi MS, Yoo WJ. Modulation of Contact Resistance of Dual-Gated MoS2 FETs Using Fermi-Level Pinning-Free Antimony Semi-Metal Contacts. Adv Sci (Weinh) 2023:e2301400. [PMID: 37144526 PMCID: PMC10375162 DOI: 10.1002/advs.202301400] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [What about the content of this article? (0)] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/25/2023] [Revised: 04/23/2023] [Indexed: 05/06/2023]
Number Cited by Other Article(s)
1
Moulick S, Maity D, Samanta G, Mandal K, Pal AN. Charge noise in low Schottky barrier multilayer tellurium field-effect transistors. NANOSCALE 2025;17:2259-2268. [PMID: 39663927 DOI: 10.1039/d4nr04176c] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 12/13/2024]
2
Yang Z, Peng X, Wang J, Lin J, Zhang C, Tang B, Zhang J, Yang W. Lowering the Schottky Barrier Height by Quasi-van der Waals Contacts for High-Performance p-Type MoTe2 Field-Effect Transistors. ACS APPLIED MATERIALS & INTERFACES 2024. [PMID: 38676636 DOI: 10.1021/acsami.4c02106] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/29/2024]
3
Song W, Dai J, Zou F, Niu Y, Cong Y, Li Q, Pan Y. Tunable ohmic van der Waals-type contacts in monolayer C3N field-effect transistors. RSC Adv 2024;14:3820-3833. [PMID: 38274169 PMCID: PMC10808999 DOI: 10.1039/d3ra08338a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/06/2023] [Accepted: 01/12/2024] [Indexed: 01/27/2024]  Open
4
Ngo TD, Huynh T, Moon I, Taniguchi T, Watanabe K, Choi MS, Yoo WJ. Self-Aligned Top-Gate Structure in High-Performance 2D p-FETs via van der Waals Integration and Contact Spacer Doping. NANO LETTERS 2023. [PMID: 37983163 DOI: 10.1021/acs.nanolett.3c04009] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/22/2023]
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