Robertson JL, Moss SC, Lifshitz Y, Kasi SR, Rabalais JW, Lempert GD, Rapoport E. Epitaxial Growth of Diamond Films on Si(111) at Room Temperature by Mass-Selected Low-Energy C
+
Beams.
Science 1989;
243:1047-50. [PMID:
17734807 DOI:
10.1126/science.243.4894.1047]
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Abstract
Diamond films ( approximately 0.7 micrometer thick) have been epitaxially grown on Si(111) substrates at room temperature with mass-selected 120-electronvolt C(+) ions. The diamond reflections observed in x-ray diffraction are well localized at their predicted positions, indicating that (i) the diamond(111) and (220) planes are parallel to the Si(111) and (220), respectively; (ii) the diamond rotational spread around its (111) normal is approximately 1.7 degrees ; and (iii) the mosaic block size is approximately 150 A. The film growth is discussed in terms of subplantation-a shallow subsurface implantation model. This discovery is an important step toward diamond semiconductor devices.
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