Enhanced Band Convergence and Ultra-Low Thermal Conductivity Lead to High Thermoelectric Performance in SnTe

Zinc Doping Induces Enhanced Thermoelectric Performance of Solvothermal SnTe

The creation of hierarchical nanostructures can effectively strengthen phonon scattering to reduce lattice thermal conductivity for improving thermoelectric properties in inorganic solids. Here, we use Zn doping to induce a remarkable reduction in the lattice thermal conductivity in SnTe, approaching the theoretical minimum limit. Microstructure analysis reveals that ZnTe nanoprecipitates can embed within SnTe grains beyond the solubility limit of Zn in the Zn alloyed SnTe. These nanoprecipitates result in a substantial decrease of the lattice thermal conductivity in SnTe, leading to an ultralow lattice thermal conductivity of 0.50 W m-1 K-1 at 773 K and a peak ZT of ~0.48 at 773 K, marking an approximately 45 % enhancement compared to pristine SnTe. This study underscores the effectiveness of incorporating ZnTe nanoprecipitates in boosting the thermoelectric performance of SnTe-based materials.

Electron-Phonon Interaction Mediated Gigantic Enhancement of Thermoelectric Power Factor Induced by Topological Phase Transition

We propose an effective strategy to significantly enhance the thermoelectric power factor (PF) of a series of 2D semimetals and semiconductors by driving them toward a topological phase transition (TPT). Employing first-principles calculations with an explicit consideration of electron-phonon interactions, we analyze the electronic transport properties of germanene across the TPT by applying hydrogenation and biaxial strain. We reveal that the nontrivial semimetal phase, hydrogenated germanene with 8% biaxial strain, achieves a considerable 4-fold PF enhancement, attributed to the highly asymmetric electronic structure and semimetallic nature of the nontrivial phase. We extend the strategy to another two representative 2D materials (stanene and HgSe) and observe a similar trend, with a marked 7-fold and 5-fold increase in PF, respectively. The wide selection of functional groups, universal applicability of biaxial strain, and broad spectrum of 2D semimetals and semiconductors render our approach highly promising for designing novel 2D materials with superior thermoelectric performance.

Multifunctional GeMnTe2 Synergistically Optimizes Thermoelectric Properties of SnTe-In2Te3 Alloys

SnTe-In2Te3 alloys ensure excellent electrical properties in the whole temperature region due to the resonant level. Nevertheless, temperature-sensitive resonance states and single phonon scattering restrict further improvement of thermoelectric performance. Consequently, it is anticipated that additional electrically independent scattering sources should be introduced to impede phonon transport. Here, the SnTe-In2Te3-GeMnTe2 alloy is prepared by further solidifying cubic GeMnTe2, which demonstrates multiple modulation effects. The highly redissolved Mn2+ promotes the valence band convergence, enhances the Seebeck coefficient at higher temperature, and balances the possible weakened resonance level effect at higher carrier concentrations, and a high average power factor (1.94 mW m-1 K-2) is realized over the entire temperature range. Additionally, compensatory vacancies, substitutions, and Ge/Mn precipitates are easily constructed with GeMnTe2 alloying, leading to a further reduction in lattice thermal conductivity, which reaches κl ∼ 0.6 W m-1 K-1 at 850 K. Ultimately, a high peak zT of ∼1.25 (850 K) and a zTave of 0.72 (300-850 K) are realized in (SnTe)2.91(In2Te3)0.03(Ge0.5Mn0.5Te)1.2, and the maximum thermoelectric conversion efficiency of ∼2.8% (ΔT ∼ 450 K) is achieved. The present results indicate multiple effects of GeMnTe2 in enhancing the thermoelectric performance of SnTe-In2Te3 alloys.

Bottom-Up Synthesis of SnTe-Based Thermoelectric Composites

There is a need for the development of lead-free thermoelectric materials for medium-/high-temperature applications. Here, we report a thiol-free tin telluride (SnTe) precursor that can be thermally decomposed to produce SnTe crystals with sizes ranging from tens to several hundreds of nanometers. We further engineer SnTe-Cu₂SnTe₃ nanocomposites with a homogeneous phase distribution by decomposing the liquid SnTe precursor containing a dispersion of Cu_1.5Te colloidal nanoparticles. The presence of Cu within the SnTe and the segregated semimetallic Cu₂SnTe₃ phase effectively improves the electrical conductivity of SnTe while simultaneously reducing the lattice thermal conductivity without compromising the Seebeck coefficient. Overall, power factors up to 3.63 mW m^-1 K^-2 and thermoelectric figures of merit up to 1.04 are obtained at 823 K, which represent a 167% enhancement compared with pristine SnTe.

Surface Functionalization of Surfactant-Free Particles: A Strategy to Tailor the Properties of Nanocomposites for Enhanced Thermoelectric Performance

The broad implementation of thermoelectricity requires high-performance and low-cost materials. One possibility is employing surfactant-free solution synthesis to produce nanopowders. We propose the strategy of functionalizing "naked" particles' surface by inorganic molecules to control the nanostructure and, consequently, thermoelectric performance. In particular, we use bismuth thiolates to functionalize surfactant-free SnTe particles' surfaces. Upon thermal processing, bismuth thiolates decomposition renders SnTe-Bi₂ S₃ nanocomposites with synergistic functions: 1) carrier concentration optimization by Bi doping; 2) Seebeck coefficient enhancement and bipolar effect suppression by energy filtering; and 3) lattice thermal conductivity reduction by small grain domains, grain boundaries and nanostructuration. Overall, the SnTe-Bi₂ S₃ nanocomposites exhibit peak z T up to 1.3 at 873 K and an average z T of ≈0.6 at 300-873 K, which is among the highest reported for solution-processed SnTe.

Surface Functionalization of Surfactant-Free Particles: A Strategy to Tailor the Properties of Nanocomposites for Enhanced Thermoelectric Performance

The broad implementation of thermoelectricity requires high-performance and low-cost materials. One possibility is employing surfactant-free solution synthesis to produce nanopowders. We propose the strategy of functionalizing "naked" particles' surface by inorganic molecules to control the nanostructure and, consequently, thermoelectric performance. In particular, we use bismuth thiolates to functionalize surfactant-free SnTe particles' surfaces. Upon thermal processing, bismuth thiolates decomposition renders SnTe-Bi2S3 nanocomposites with synergistic functions: 1) carrier concentration optimization by Bi doping; 2) Seebeck coefficient enhancement and bipolar effect suppression by energy filtering; and 3) lattice thermal conductivity reduction by small grain domains, grain boundaries and nanostructuration. Overall, the SnTe-Bi2S3 nanocomposites exhibit peak z  T up to 1.3 at 873 K and an average z  T of ≈0.6 at 300-873 K, which is among the highest reported for solution-processed SnTe.

Enabling High Quality Factor and Enhanced Thermoelectric Performance in BiBr3-Doped Sn0.93Mn0.1Te via Band Convergence and Band Sharpening

Lead-free SnTe-based materials are expected to replace PbTe and have gained much attention from the thermoelectric community. In this work, a maximum ZT of ∼1.31 at 873 K is attained in SnTe via promoting a high quality factor resulting from Mn alloying and BiBr₃ doping. The results show that Mn alloying in SnTe converges the L band and the ∑ band in valence bands to supply enhanced valley degeneracy and the density of states effective mass, giving rise to a high power factor of ∼21.67 μW cm^-1 K^-2 at 723 K in Sn_0.93Mn_0.1Te. In addition, the subsequent BiBr₃ doping can sharpen the top of the valence band to coordinate the contradiction between the band effective mass and the carrier mobility, thus enhancing the carrier mobility while maintaining a relatively large density of states effective mass. Consequently, a maximum power factor of 23.85 μW cm^-1 K^-2 at 873 K is achieved in Sn_0.93Mn_0.1Te-0.8 atom % BiBr₃. In addition to band sharpening, BiBr₃ doping can also effectively suppress the bipolar effect at elevated temperatures and reduce the lattice thermal conductivity by strengthening the point defect phonon scattering. Benefitting from doping BiBr₃ in Sn_0.93Mn_0.1Te optimizes the carrier mobility and suppresses the lattice thermal conductivity, resulting in a dramatically enhanced quality factor. Accordingly, an average ZT of ∼0.62 in the temperature range of 300-873 K is obtained in Sn_0.93Mn_0.1Te-0.8 atom % BiBr₃, ∼250% increase compared with that in Sn_1.03Te.

Insights into Low Thermal Conductivity in Inorganic Materials for Thermoelectrics

Efficient manipulation of thermal conductivity and fundamental understanding of the microscopic mechanisms of phonon scattering in crystalline solids are crucial to achieve high thermoelectric performance. Thermoelectric energy conversion directly and reversibly converts between heat and electricity and is a promising renewable technology to generate electricity by recovering waste heat and improve solid-state refrigeration. However, a unique challenge in thermal transport needs to be addressed to achieve high thermoelectric performance: the requirement of crystalline materials with ultralow lattice thermal conductivity (κ_L). A plethora of strategies have been developed to lower κ_L in crystalline solids by means of nanostructural modifications, introduction of intrinsic or extrinsic phonon scattering centers with tailored shape and dimension, and manipulation of defects and disorder. Recently, intrinsic local lattice distortion and lattice anharmonicity originating from various mechanisms such as rattling, bonding heterogeneity, and ferroelectric instability have found popularity. In this Perspective, we outline the role of manipulation of chemical bonding and structural chemistry on thermal transport in various high-performance thermoelectric materials. We first briefly outline the fundamental aspects of κ_L and discuss the current status of the popular phonon scattering mechanisms in brief. Then we discuss emerging new ideas with examples of crystal structure and lattice dynamics in exemplary materials. Finally, we present an outlook for focus areas of experimental and theoretical challenges, possible new directions, and integrations of novel techniques to achieve low κ_L in order to realize high-performance thermoelectric materials.

Contrasting roles of Bi-doping and Bi2Te3 alloying on the thermoelectric performance of SnTe

A step-by-step band convergence strategy contributes to the enhanced thermoelectric figure of merit ZT in SnTe.

Multiple Effects Promoting the Thermoelectric Performance of SnTe by Alloying with CuSbTe2 and CuBiTe2

In a SnTe-based thermoelectric material, the naturally high hole concentration caused by cation vacancies and high total thermal conductivity seriously hinder its thermoelectric performance. A recent work shows that alloying SnTe with other compounds from the I-V-VI2 family (I = Ag, Na; V = Sb, Bi; VI = Te) can be considered an effective strategy to boost the figure of merit efficiently via the synergy of manipulating hole concentration and lowering lattice thermal conductivity. Herein, we present a markedly enhanced thermoelectric performance in p-type SnTe through CuPnTe2 (Pn = Sb, Bi) alloying. Moreover, we found that the alloying with both CuSbTe2 and CuBiTe2 can facilitate the valence band convergence of SnTe, but their relative influence is different. Interestingly, compared to CuBiTe2, alloying with CuSbTe2 increases the carrier concentration of SnTe, which suppresses the bipolar effect. Ultimately, under the positive effect of valence band convergence, increased vacancy concentration, and decreased lattice thermal conductivity, compounds with a nominal composition of (SnTe)0.90(CuSbTe2)0.10 attains a peak zT of ∼1.26 at 823 K. In contrast, the thermoelectric performance of (SnTe)1-x(CuBiTe2)x is restricted by the reduced carrier concentration and diminished band gap, showing only a humble maximum zT value of ∼0.91 at 823 K in the sample with a nominal composition of (SnTe)0.96(CuBiTe2)0.04. These results demonstrate the multiple effects on thermoelectric transport during the formation of complex solid solutions.

Surprisingly good thermoelectric performance of monolayer C3N

The rapid emergence of graphene has attracted numerous efforts to explore other two-dimensional materials. Here, we combine first-principles calculations and Boltzmann theory to investigate the structural, electronic, and thermoelectric transport properties of monolayer C₃N, which exhibits a honeycomb structure very similar to graphene. It is found that the system is both dynamically and thermally stable even at high temperature. Unlike graphene, the monolayer has an indirect band gap of 0.38 eV and much lower lattice thermal conductivity. Moreover, the system exhibits obviously larger electrical conductivity and Seebeck coefficients for the hole carriers. Consequently, theZTvalue ofp-type C₃N can reach 1.4 at 1200 K when a constant relaxation time is predicted by the simple deformation potential theory. However, such a largerZTis reduced to 0.6 if we fully consider the electron-phonon coupling. Even so, the thermoelectric performance of monolayer C₃N is still significantly enhanced compared with that of graphene, and is surprisingly good for low-dimensional thermoelectric materials consisting of very light elements.

Local ferroelectric polarization switching driven by nanoscale distortions in thermoelectric [Formula: see text]

A remarkable decrease in the lattice thermal conductivity and enhancement of thermoelectric figure of merit were recently observed in rock-salt cubic SnTe, when doped with germanium (Ge). Primarily, based on theoretical analysis, the decrease in lattice thermal conductivity was attributed to local ferroelectric fluctuations induced softening of the optical phonons which may strongly scatter the heat carrying acoustic phonons. Although the previous structural analysis indicated that the local ferroelectric transition temperature would be near room temperature in [Formula: see text], a direct evidence of local ferroelectricity remained elusive. Here we report a direct evidence of local nanoscale ferroelectric domains and their switching in [Formula: see text] using piezoeresponse force microscopy(PFM) and switching spectroscopy over a range of temperatures near the room temperature. From temperature dependent (250-300 K) synchrotron X-ray pair distribution function (PDF) analysis, we show the presence of local off-centering distortion of Ge along the rhombohedral direction in global cubic [Formula: see text]. The length scale of the [Formula: see text] off-centering is 0.25-0.10 Å near the room temperatures (250-300 K). This local emphatic behaviour of cation is the cause for the observed local ferroelectric instability, thereby low lattice thermal conductivity in [Formula: see text].

Anion exchanged Cl doping achieving band sharpening and low lattice thermal conductivity for improving thermoelectric performance in SnTe

Cl doping achieves band sharpening as a potential strategy for improving the power factor in SnTe thermoelectrics.