Frederick E, Campbell Q, Benavidez A, Wheeler DR, Misra S. Reaction of Dichlorophenylborane with H-Si(100).
ACS OMEGA 2021;
6:33645-33651. [PMID:
34926912 PMCID:
PMC8675003 DOI:
10.1021/acsomega.1c04619]
[Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 08/24/2021] [Accepted: 11/12/2021] [Indexed: 06/14/2023]
Abstract
Traditional approaches to achieving dopant functionalized Si involve grafting the dopant to the Si substrates through O-Si or C-Si bonds, resulting in indirect attachment of the dopant to the Si. Recently, ultrahigh vacuum work has demonstrated that high densities of direct B-Si bonds enable unprecedented electronic behaviors in Si that make it possible for Si to be used as a next-generation electronic material. As solvothermal approaches are inherently amenable to scale-up, there is currently a push to develop solvothermal approaches for the formation of direct dopant-Si bonds. Thus far, B-Si chemistries for next-generation electronic materials have been demonstrated with boron trichloride and bis(pinacolatodiboron). In this work, we use a combination of experimental work and computational studies to examine the reactivity of a phenyl derivatized boron trichloride, namely dichlorophenylborane, with H-Si(100). We determine that despite the stability and ease for the formation of C-Si bonds, the organic component, the phenyl group remains attached to the B and does not yield competitive formation of products via a Si-C bond. This reaction proved a new solvothermal method for the formation of direct B-Si bonds that, with further work, can be leveraged in developing next-generation electronic materials.
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