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Luo M, Chen R, Zhu Z, Cheng C, Ning X, Huang B. A Broadband Photodetector Based on PbS Quantum Dots and Graphene with High Responsivity and Detectivity. NANOMATERIALS (BASEL, SWITZERLAND) 2023; 13:1996. [PMID: 37446512 DOI: 10.3390/nano13131996] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/05/2023] [Revised: 06/24/2023] [Accepted: 06/27/2023] [Indexed: 07/15/2023]
Abstract
A high-efficiency photodetector consisting of colloidal PbS quantum dots (QDs) and single-layer graphene was prepared in this research. In the early stage, PbS QDs were synthesized and characterized, and the results showed that the product conformed with the characteristics of high-quality PbS QDs. Afterwards, the photodetector was derived through steps, including the photolithography and etching of indium tin oxide (ITO) electrodes and the graphene active region, as well as the spin coating and ligand substitution of the PbS QDs. After application testing, the photodetector, which was prepared in this research, exhibited outstanding properties. Under visible and near-infrared light, the highest responsivities were up to 202 A/W and 183 mA/W, respectively, and the highest detectivities were up to 2.24 × 1011 Jones and 2.47 × 108 Jones, respectively, with light densities of 0.56 mW/cm2 and 1.22 W/cm2, respectively. In addition to these results, the response of the device and the rise and fall times for the on/off illumination cycles showed its superior performance, and the fastest response times were approximately 0.03 s and 1.0 s for the rise and fall times, respectively. All the results illustrated that the photodetector based on PbS and graphene, which was prepared in this research, possesses the potential to be applied in reality.
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Affiliation(s)
- Mutan Luo
- State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
- Brain Machine Fusion Intelligence Institute, Suzhou 215133, China
| | - Run Chen
- State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
| | - Zhaowei Zhu
- College of Science, China Agricultural University, Beijing 100083, China
| | - Chuantong Cheng
- State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
- College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Xin Ning
- State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
- College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Beiju Huang
- State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
- College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 100049, China
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Dong C, Liu S, Barange N, Lee J, Pardue T, Yi X, Yin S, So F. Long-Wavelength Lead Sulfide Quantum Dots Sensing up to 2600 nm for Short-Wavelength Infrared Photodetectors. ACS APPLIED MATERIALS & INTERFACES 2019; 11:44451-44457. [PMID: 31689078 DOI: 10.1021/acsami.9b16539] [Citation(s) in RCA: 26] [Impact Index Per Article: 4.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Lead sulfide nanoparticles (PbS NPs) are used in the short-wavelength infrared photodetectors because of their excellent photosensitivity, band gap tunability, and solution processability. It has been a challenge to synthesize high-quality PbS NPs with an absorption peak beyond 2000 nm. In this work, using PbS seed crystals with an absorption peak at 1960 nm, we report a successful synthesis of very large monodispersed PbS NPs having a diameter up to 16 nm by multiple injections. The resulting NPs have an absorption peak over 2500 nm with a small full width at half-maximum of 24 meV. To demonstrate the applications of such large quantum dots (QDs), broadband heterojunction photodetectors are fabricated with the large PbS QDs of an absorption peak at 2100 nm. The resulting devices have an external quantum efficiency (EQE) of 25% (over 50% internal quantum efficiency) at 2100 nm corresponding to a responsivity of 0.385 A/W and an EQE of ∼60% in the visible range.
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Affiliation(s)
- Chen Dong
- Department of Materials Science and Engineering , North Carolina State University , Raleigh , North Carolina 27695 , United States
| | - Shuyi Liu
- Department of Materials Science and Engineering , North Carolina State University , Raleigh , North Carolina 27695 , United States
| | - Nilesh Barange
- Department of Materials Science and Engineering , North Carolina State University , Raleigh , North Carolina 27695 , United States
| | - Jaewoong Lee
- Department of Materials Science and Engineering , North Carolina State University , Raleigh , North Carolina 27695 , United States
| | - Tyler Pardue
- Department of Materials Science and Engineering , North Carolina State University , Raleigh , North Carolina 27695 , United States
| | - Xueping Yi
- Department of Materials Science and Engineering , North Carolina State University , Raleigh , North Carolina 27695 , United States
| | - Shichen Yin
- Department of Materials Science and Engineering , North Carolina State University , Raleigh , North Carolina 27695 , United States
| | - Franky So
- Department of Materials Science and Engineering , North Carolina State University , Raleigh , North Carolina 27695 , United States
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Lu H, Carroll GM, Neale NR, Beard MC. Infrared Quantum Dots: Progress, Challenges, and Opportunities. ACS NANO 2019; 13:939-953. [PMID: 30648854 DOI: 10.1021/acsnano.8b09815] [Citation(s) in RCA: 77] [Impact Index Per Article: 12.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
Infrared technologies provide tremendous value to our modern-day society. The need for easy-to-fabricate, solution-processable, tunable infrared active optoelectronic materials has driven the development of infrared colloidal quantum dots, whose band gaps can readily be tuned by dimensional constraints due to the quantum confinement effect. In this Perspective, we summarize recent progress in the development of infrared quantum dots both as infrared light emitters ( e.g., in light-emitting diodes, biological imaging, etc.) as well as infrared absorbers ( e.g., in photovoltaics, solar fuels, photon up-conversion, etc.), focusing on how fundamental breakthroughs in synthesis, surface chemistry, and characterization techniques are facilitating the implementation of these nanostructures into exploratory device architectures as well as in emerging applications. We discuss the ongoing challenges and opportunities associated with infrared colloidal quantum dots.
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Affiliation(s)
- Haipeng Lu
- Chemistry & Nanoscience Center , National Renewable Energy Laboratory , Golden , Colorado 80401 , United States
| | - Gerard M Carroll
- Chemistry & Nanoscience Center , National Renewable Energy Laboratory , Golden , Colorado 80401 , United States
| | - Nathan R Neale
- Chemistry & Nanoscience Center , National Renewable Energy Laboratory , Golden , Colorado 80401 , United States
| | - Matthew C Beard
- Chemistry & Nanoscience Center , National Renewable Energy Laboratory , Golden , Colorado 80401 , United States
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Frenette LC, Krauss TD. Uncovering active precursors in colloidal quantum dot synthesis. Nat Commun 2017; 8:2082. [PMID: 29233976 PMCID: PMC5727186 DOI: 10.1038/s41467-017-01936-z] [Citation(s) in RCA: 22] [Impact Index Per Article: 2.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/03/2017] [Accepted: 10/26/2017] [Indexed: 11/09/2022] Open
Abstract
Studies of the fundamental physics and chemistry of colloidal semiconductor nanocrystal quantum dots (QDs) have been central to the field for over 30 years. Although the photophysics of QDs has been intensely studied, much less is understood about the underlying chemical reaction mechanism leading to monomer formation and subsequent QD growth. Here we investigate the reaction mechanism behind CdSe QD synthesis, the most widely studied QD system. Remarkably, we find that it is not necessary for chemical precursors used in the most common synthetic methods to directly react to form QD monomers, but rather they can generate in situ the same highly reactive Cd and Se precursors that were used in some of the original II-VI QD syntheses decades ago, i.e., hydrogen chalcogenide gas and alkyl cadmium. Appreciating this surprising finding may allow for directed manipulation of these reactive intermediates, leading to more controlled syntheses with improved reproducibility. Little is understood about the chemical evolution of precursors to quantum dots. Here, the authors find that under the high temperature conditions typical of CdSe quantum dot synthesis, precursors decompose into highly reactive species in a critical first step before forming monomers and finally nanocrystals.
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Affiliation(s)
- Leah C Frenette
- Department of Chemistry, University of Rochester, Rochester, NY, 14627-0216, USA
| | - Todd D Krauss
- Department of Chemistry, University of Rochester, Rochester, NY, 14627-0216, USA. .,Institute of Optics, University of Rochester, Rochester, NY, 14627-0216, USA.
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