Preparation and characterization of electrodeposited indium selenide thin films

Stress-induced phase-alteration in solution processed indium selenide thin films during annealing

This article demonstrates the successful synthesis of indium selenide thin films by a spin coating method in air using thiol-amine cosolvents. The synthesized films encountered a transformation from β-In3Se2 to γ-In2Se3 phase due to mechanical stress during annealing as confirmed from XRD and EDS analysis. The SEM study ensured the homogeneity and uniformity of surface morphology of both phases. The FTIR analysis also confirmed the In-Se stretching vibration bond for both β-In3Se2 and γ-In2Se3 thin films. The temperature dependent electrical conductivity indicated the semiconducting nature of both phases. The optical transmittance was found to increase with annealing temperatures for both phases. The optical band gaps were estimated to be in the range of 2.60-2.75 and 2.12-2.28 eV for β-In3Se2 and γ-In2Se3 phases, respectively consistent with the reported values. These results indicate that stress-induced phase transformation in solution-processed indium selenide could be useful in 2D optoelectronic devices in future.

Optical Investigations of In2Se2.7Sb0.3 Thin Films Prepared by Thermal Evaporation Technique

The III-VI compound semiconductors are important for the fabrication of ionizing radiation detectors, solid-state electrodes, and photosensitive heterostructures, solar cell as well as ionic batteries. In this paper, In2Se2.7Sb0.3thin films have been grown by thermal evaporation technique onto a with chemically clean glass substrate. Amorphous nature of the films has been discovered by UV-VIS spectrophotometer. The analysis by absorption spectra within the spectral range 200nm -900 nm has been used for the optical characterization of thin films. From these data the optical constants (absorption coefficient (α), refractive index (η), extinction coefficient (k)) and optical band gap (Eg) are studied. The results were discussed, and reported in detail.

Modification of WO(3) thin films by MeV N(+)-ion beam irradiation

In this paper, we report on modification of the structural, optical, vibrational, and surface morphological properties of 2 MeV N(+)-ion irradiated WO(3) thin films at different fluences (up to 1 × 10(15) ions cm(-2)). Although we observe irradiation induced grain growth, no structural phase transition takes place in the WO(3) films. These are accompanied by a systematic reduction in the optical band gap of the films. These observations are corroborated by our independent micro-Raman and optical absorption spectroscopy studies. We have made an attempt to correlate these results with MeV ion-matter interaction.

Synthesis and characterization of photoluminescent In-doped CdSe nanoparticles

Indium-doped CdSe nanoparticles have been synthesized and characterized. Their light absorption, photoluminescence, and structure are similar to undoped CdSe nanoparticles. The greater part of the In associated with the nanoparticles is removed when the nanoparticles undergo ligand exchange by pyridine. As observed with undoped nanoparticles, a ZnS capping layer on the indium-doped nanoparticles results in enhanced nanocrystal photoluminescence. Also, the ZnS cap enhances the retention of In by the nanoparticles. Elemental analysis shows ligand exchange causes CdSe to be lost and capping with ZnS results in the loss of Se. We conclude that In-doped nanoparticles have most of the In on their surface, capping helps the nanoparticles retain the In, and they do not have altered electronic properties.