Effects of 50 MeV Si ion irradiation on nonlinear optical benzimidazole single crystals

Effects of γ-ray irradiation on optical absorption and laser damage performance of KDP crystals containing arsenic impurities

The effects of γ-irradiation on potassium dihydrogen phosphate crystals containing arsenic impurities are investigated with different optical diagnostics, including UV-VIS absorption spectroscopy, photo-thermal common-path interferometer and photoluminescence spectroscopy. The optical absorption spectra indicate that a new broad absorption band near 260 nm appears after γ-irradiation. It is found that the intensity of absorption band increases with the increasing irradiation dose and arsenic impurity concentration. The simulation of radiation defects show that this absorption is assigned to the formation of AsO₄⁴⁻ centers due to arsenic ions substituting for phosphorus ions. Laser-induced damage threshold test is conducted by using 355 nm nanosecond laser pulses. The correlations between arsenic impurity concentration and laser induced damage threshold are presented. The results indicate that the damage performance of the material decreases with the increasing arsenic impurity concentration. Possible mechanisms of the irradiation-induced defects formation under γ-irradiation of KDP crystals are discussed.

Electron irradiation effects on optical properties of semiorganic antimony thiourea tetra chloride single crystals

Antimony thiourea tetra chloride single crystals were grown by solution growth technique at room temperature. The UV-visible, fourier transform infrared and fluorescence spectra were recorded and electron irradiation effects on these properties were studied. The optical absorption edge of the UV-visible spectrum slightly shifts towards longer wavelength with the increase of irradiation dose. The fluorescence quantum yield is decreased for electron irradiated antimony thiourea tetra chloride crystals. The presence of functional group of the as-grown and electron irradiated complex was confirmed by fourier transform infrared spectral study.

The effect of nitric acid (HNO3) on growth, spectral, thermal and dielectric properties of triglycine sulphate (TGS) crystal

The effect of nitric acid (HNO(3)) addition on the growth of triglycine sulphate (TGS) crystal has been studied from the aqueous solution for various concentrations of nitric acid. Significant changes in the crystal size and morphology have been observed in all the grown samples. Single crystal and powder X-ray diffraction analyses confirm the structure and cell parameter values of pure and HNO(3) doped TGS crystals. FT-Raman and FTIR spectra confirm the characteristics absorption bands of pure and HNO(3) doped TGS crystals. The composition of TGS crystals have been confirmed by CHNS analysis. Physical properties such as thermal, dielectric and mechanical studies have been performed for the pure and HNO(3) doped TGS crystals. The dielectric constants of the crystals have been studied as a function of frequency. The results suggest that the HNO(3) is doped into TGS crystal and that the doping increases its dielectric constant.