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For: Szymański T, Wośko M, Paszkiewicz B, Serafińczuk J, Drzik M, Paszkiewicz R. Stress control by micropits density variation in strained AlGaN/GaN/SiN/AlN/Si(111) heterostructures. Crystal Research and Technology 2015. [DOI: 10.1002/crat.201500276] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [What about the content of this article? (0)] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/09/2022]
Number Cited by Other Article(s)
1
Pokryszka P, Szymanski T, Paszkiewicz B. Light Influence on the Sheet Resistance of AlGaN/GaN Heterostructures Grown by MOVPE Technique. CRYSTAL RESEARCH AND TECHNOLOGY 2018. [DOI: 10.1002/crat.201800157] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/10/2022]
2
Szymański T, Wośko M, Wzorek M, Paszkiewicz B, Paszkiewicz R. Origin of surface defects and influence of an in situ deposited SiN nanomask on the properties of strained AlGaN/GaN heterostructures grown on Si(111) using metal–organic vapour phase epitaxy. CrystEngComm 2016. [DOI: 10.1039/c6ce01804a] [Citation(s) in RCA: 13] [Impact Index Per Article: 1.6] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
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