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Zhou X, Ye L, Yuan L, Zhang D, Zhang H, Pang D, Tang Y, Li H, Li W, Zeng H. Mg-doped α-Ga 2O 3 Nanorods for the Construction of Photoelectrochemical-Type Self-Powered Solar Blind UV Photodetectors and Underwater Imaging Application. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2025; 12:e2413074. [PMID: 40009523 PMCID: PMC12021088 DOI: 10.1002/advs.202413074] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/17/2024] [Revised: 12/10/2024] [Indexed: 02/28/2025]
Abstract
Underwater imaging technologies are increasingly crucial for environmental monitoring and resource exploration. However, the development of advanced photodetectors for such applications faces significant challenges, including interference from ambient visible and infrared light, adaptation to underwater environments, and cost-effectiveness. Photoelectrochemical-type solar-blind photodetectors (PEC-SBPDs) based on wide bandgap semiconductors have shown great promise in overcoming these challenges. Here, a novel approach to enhance the performance of α-Ga2O3-based PEC-SBPDs is presented for underwater imaging through Mg-doping. By employing a low-cost hydrothermal synthesis technique, Mg-doped α-Ga2O3 nanorod arrays are fabricated, which induces the formation of VO-MgGa complexes that enhances the interfacial catalytic activity and improves the transport of photogenerated carriers. The optimized PEC-SBPDs exhibits a remarkable 435% increase in photocurrent response compared to undoped α-Ga2O3, with a peak responsivity of 34.54 mA W-1. A 5 × 5 PEC-SBPD array based on Mg-doped α-Ga2O3 nanorods is successfully demonstrated for underwater solar-blind imaging, achieving clear and efficient imaging in challenging underwater conditions. This study not only highlights the superior performance of Mg-doped α-Ga2O3 in underwater environments but also opens new avenues for the development of high-performance self-powered photodetectors in imaging, sensing, and other related applications.
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Affiliation(s)
- Xin Zhou
- Guangyang Bay LaboratoryChongqing Institute for Brain and IntelligenceChongqing400064China
- College of Physics and Electronic EngineeringChongqing Normal UniversityChongqing401331China
| | - Lijuan Ye
- College of Physics and Electronic EngineeringChongqing Normal UniversityChongqing401331China
| | - Lai Yuan
- College of Physics and Electronic EngineeringChongqing Normal UniversityChongqing401331China
| | - Dan Zhang
- College of Physics and Electronic EngineeringChongqing Normal UniversityChongqing401331China
| | - Hong Zhang
- College of Physics and Electronic EngineeringChongqing Normal UniversityChongqing401331China
| | - Di Pang
- College of Physics and Electronic EngineeringChongqing Normal UniversityChongqing401331China
| | - Yan Tang
- College of Physics and Electronic EngineeringChongqing Normal UniversityChongqing401331China
| | - Honglin Li
- Guangyang Bay LaboratoryChongqing Institute for Brain and IntelligenceChongqing400064China
- College of Physics and Electronic EngineeringChongqing Normal UniversityChongqing401331China
- Chongqing Key Laboratory of Precision OpticsChongqing Institute of East China Normal UniversityChongqing401120China
| | - Wanjun Li
- College of Physics and Electronic EngineeringChongqing Normal UniversityChongqing401331China
| | - Heping Zeng
- Guangyang Bay LaboratoryChongqing Institute for Brain and IntelligenceChongqing400064China
- Chongqing Key Laboratory of Precision OpticsChongqing Institute of East China Normal UniversityChongqing401120China
- State Key Laboratory of Precision SpectroscopyEast China Normal UniversityShanghai200241China
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Li L, Qiao L, Liu D, Yu Z, An K, Yang J, Liu C, Cao Y, Pan H. High-Valence Metals Accelerate the Reaction Kinetics for Boosting Water Oxidation. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2025; 21:e2403992. [PMID: 39396371 DOI: 10.1002/smll.202403992] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/16/2024] [Revised: 10/03/2024] [Indexed: 10/15/2024]
Abstract
The transition metal with high valence state in oxyhydroxides can accelerate the reaction kinetics, enabling highly intrinsic OER activity. However, the formation of high-valence transition-metal ions is thermodynamically unfavorable in most cases. Here, a novel strategy is proposed to realize the purpose and reveal the mechanism by constructing amorphous phase and incorporating of elements with the characteristic of Lewis acid or variable charge state. A model catalyst, CeO2-NiFeOxHy, is presented to achieve the modulation of valence state of active site (Ni2+→Ni3+→Ni4+) for improved OER, leading to dominant active sites with high valence state. The CeO2-NiFeOxHy electrode exhibits superior OER performance with overpotential of 214 and 659 mV at 10 and 500 mA cm-2, respectively (without IR correction), and high stability, which are much better than those of NiOxHy, NiFeOxHy and CeO2-NiOxHy. These findings provide an effective strategy to achieve the active metals with high-valence state for highly efficient OER.
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Affiliation(s)
- Lun Li
- Institute of Applied Physics and Materials Engineering, University of Macau, Macao, SAR, 999078, China
| | - Lulu Qiao
- Institute of Applied Physics and Materials Engineering, University of Macau, Macao, SAR, 999078, China
| | - Di Liu
- Institute of Applied Physics and Materials Engineering, University of Macau, Macao, SAR, 999078, China
| | - Zhichao Yu
- Institute of Applied Physics and Materials Engineering, University of Macau, Macao, SAR, 999078, China
| | - Keyu An
- Institute of Applied Physics and Materials Engineering, University of Macau, Macao, SAR, 999078, China
| | - Jiao Yang
- Institute of Applied Physics and Materials Engineering, University of Macau, Macao, SAR, 999078, China
| | - Chunfa Liu
- Institute of Applied Physics and Materials Engineering, University of Macau, Macao, SAR, 999078, China
| | - Youpeng Cao
- Institute of Applied Physics and Materials Engineering, University of Macau, Macao, SAR, 999078, China
| | - Hui Pan
- Institute of Applied Physics and Materials Engineering, University of Macau, Macao, SAR, 999078, China
- Department of Physics and Chemistry, Faculty of Science and Technology, University of Macau, Macao, SAR, 999078, China
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Scalable, highly stable Si-based metal-insulator-semiconductor photoanodes for water oxidation fabricated using thin-film reactions and electrodeposition. Nat Commun 2021; 12:3982. [PMID: 34172754 PMCID: PMC8233328 DOI: 10.1038/s41467-021-24229-y] [Citation(s) in RCA: 13] [Impact Index Per Article: 3.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/05/2021] [Accepted: 06/07/2021] [Indexed: 12/02/2022] Open
Abstract
Metal-insulator-semiconductor (MIS) structures are widely used in Si-based solar water-splitting photoelectrodes to protect the Si layer from corrosion. Typically, there is a tradeoff between efficiency and stability when optimizing insulator thickness. Moreover, lithographic patterning is often required for fabricating MIS photoelectrodes. In this study, we demonstrate improved Si-based MIS photoanodes with thick insulating layers fabricated using thin-film reactions to create localized conduction paths through the insulator and electrodeposition to form metal catalyst islands. These fabrication approaches are low-cost and highly scalable, and yield MIS photoanodes with low onset potential, high saturation current density, and excellent stability. By combining this approach with a p+n-Si buried junction, further improved oxygen evolution reaction (OER) performance is achieved with an onset potential of 0.7 V versus reversible hydrogen electrode (RHE) and saturation current density of 32 mA/cm2 under simulated AM1.5G illumination. Moreover, in stability testing in 1 M KOH aqueous solution, a constant photocurrent density of ~22 mA/cm2 is maintained at 1.3 V versus RHE for 7 days. Authors demonstrate Si-based MIS photoanodes using Al thin-film reactions to create localized conduction paths through the insulator and Ni electrodeposition to form metal catalyst islands. These approaches yielded low onset potential, high saturation current density, and excellent stability.
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Rajendiran R, Chinnadurai D, Chen K, Selvaraj AR, Prabakar K, Li OL. Electrodeposited Trimetallic NiFeW Hydroxide Electrocatalysts for Efficient Water Oxidation. CHEMSUSCHEM 2021; 14:1324-1335. [PMID: 33381900 DOI: 10.1002/cssc.202002544] [Citation(s) in RCA: 9] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/31/2020] [Revised: 12/30/2020] [Indexed: 06/12/2023]
Abstract
Tungsten-doped Ni-Fe hydroxides fabricated on a three-dimensional nickel foam through cathodic electrodeposition are proposed as effective oxygen evolution reaction (OER) catalysts for alkaline water oxidation. Incorporating an adequate amount of W into Ni-Fe hydroxides modulates the electronic structure by changing the local environment of Ni and Fe and create oxygen vacancies, resulting in abundant active sites for the OER. The optimized electrocatalyst, with a substantial number of catalytic sites, is found to outperform the well-established 20 wt% Ir/C electrocatalyst. The catalyst only requires small overpotentials of 224 mV and 251 mV to generate current densities of 10 mA cm-2 and 50 mA cm-2 , respectively, at an extremely low Tafel slope. Surface study after long-term chronopotentiometry (ca. 30 h) reveals that the tungsten dopant undergoes reduction to stabilize the Ni and Fe active sites for predominant water oxidation. This research provides new insight to apply optimum amounts of tungsten doping to enable more significant electronic coupling within Ni-Fe for the chemisorption of hydroxy and oxygen intermediates and greatly improved OER activity.
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Affiliation(s)
- Rajmohan Rajendiran
- Department of Materials Science and Engineering, Pusan National University, 2 Busandaehak-ro 63beon-gil, Geumjeong-gu, Busan, 46241, Republic of Korea
- Materials Technology Institute, Pusan National University, 2 Busandaehak-ro 63beon-gil, Geumjeong-gu, Busan, 46241, Republic of Korea
| | - Deviprasath Chinnadurai
- Department of Electrical Engineering, Pusan National University, 2 Busandaehak-ro 63beon-gil, Geumjeong-gu, Busan, 46241, Republic of Korea
| | - Kai Chen
- Department of Materials Science and Engineering, Pusan National University, 2 Busandaehak-ro 63beon-gil, Geumjeong-gu, Busan, 46241, Republic of Korea
| | - Aravindha Raja Selvaraj
- Department of Electrical Engineering, Pusan National University, 2 Busandaehak-ro 63beon-gil, Geumjeong-gu, Busan, 46241, Republic of Korea
| | - Kandasamy Prabakar
- Department of Electrical Engineering, Pusan National University, 2 Busandaehak-ro 63beon-gil, Geumjeong-gu, Busan, 46241, Republic of Korea
| | - Oi Lun Li
- Department of Materials Science and Engineering, Pusan National University, 2 Busandaehak-ro 63beon-gil, Geumjeong-gu, Busan, 46241, Republic of Korea
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