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Abbas M, Liang L, Jian Y, Ishaq M, Chen Y, Ahmad M, Su Z, Chen S, Hu J, Liang G. Charge Carrier Separation Enhancement Mechanism in Eco-Friendly CZTSSe/(Zn, Sn)O Thin-Film Photocathodes for Highly Efficient Solar-To-Hydrogen Evolution. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2025:e2500947. [PMID: 40326200 DOI: 10.1002/smll.202500947] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/22/2025] [Revised: 04/28/2025] [Indexed: 05/07/2025]
Abstract
Kesterite Cu2ZnSn(S,Se)4 (CZTSSe)-based photocathodes present promising solutions for solar hydrogen evolution, owing to their non-toxic, cost-effective nature and exceptional photoelectrochemical (PEC) properties. Traditionally, the development of CZTSSe-based photocathodes for PEC water splitting have utilized CdS as the electron transport layer (ETL) owing to its favorable band alignment with the CZTSSe light-absorbing thin film. However, its environmental concerns pose a significant challenge. Therefore, it is crucial to identifying an eco-friendly ETL that ensures effective band alignment with kesterite materials. In this study, the Zn/Sn ratio and the thickness of the (Zn,Sn)O buffer layer is optimized to fabricate a Cd-free CZTSSe/(Zn,Sn)O/TiO₂/Pt photocathode. This design not only promotes environmental safety but also establishes optimal spike-like band alignments with the CZTSSe thin film. The optimized photocathode demonstrates excellent charge carrier separation and transfer, resulting in a photocurrent density of 29.80 mA cm- 2 at 0 VRHE and a half-cell solar-to-hydrogen (HC-STH) conversion efficiency of 4.0% in a 0.5 M H₂SO₄ electrolyte. As research continues to optimize the alternative materials, Cd-free CZTSSe/(Zn, Sn)O-based photocathodes along with their eco-friendly nature hold great promise for achieving competitive efficiencies in sustainable solar-to-hydrogen energy applications.
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Affiliation(s)
- Muhammad Abbas
- Institute of Thin Film Physics and Applications, Shenzhen Key Laboratory of Advanced Thin Films and Applications, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, State Key Laboratory of Radio Frequency Heterogeneous Integration, College of Electronics and Information Engineering, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, Guangdong, 518060, China
| | - Lifeng Liang
- Institute of Thin Film Physics and Applications, Shenzhen Key Laboratory of Advanced Thin Films and Applications, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, State Key Laboratory of Radio Frequency Heterogeneous Integration, College of Electronics and Information Engineering, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, Guangdong, 518060, China
| | - Yue Jian
- Institute of Thin Film Physics and Applications, Shenzhen Key Laboratory of Advanced Thin Films and Applications, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, State Key Laboratory of Radio Frequency Heterogeneous Integration, College of Electronics and Information Engineering, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, Guangdong, 518060, China
| | - Muhammad Ishaq
- Institute of Thin Film Physics and Applications, Shenzhen Key Laboratory of Advanced Thin Films and Applications, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, State Key Laboratory of Radio Frequency Heterogeneous Integration, College of Electronics and Information Engineering, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, Guangdong, 518060, China
| | - Yong Chen
- Institute of Thin Film Physics and Applications, Shenzhen Key Laboratory of Advanced Thin Films and Applications, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, State Key Laboratory of Radio Frequency Heterogeneous Integration, College of Electronics and Information Engineering, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, Guangdong, 518060, China
| | - Munir Ahmad
- Institute of Thin Film Physics and Applications, Shenzhen Key Laboratory of Advanced Thin Films and Applications, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, State Key Laboratory of Radio Frequency Heterogeneous Integration, College of Electronics and Information Engineering, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, Guangdong, 518060, China
| | - Zhenghua Su
- Institute of Thin Film Physics and Applications, Shenzhen Key Laboratory of Advanced Thin Films and Applications, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, State Key Laboratory of Radio Frequency Heterogeneous Integration, College of Electronics and Information Engineering, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, Guangdong, 518060, China
| | - Shuo Chen
- Institute of Thin Film Physics and Applications, Shenzhen Key Laboratory of Advanced Thin Films and Applications, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, State Key Laboratory of Radio Frequency Heterogeneous Integration, College of Electronics and Information Engineering, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, Guangdong, 518060, China
| | - Juguang Hu
- Institute of Thin Film Physics and Applications, Shenzhen Key Laboratory of Advanced Thin Films and Applications, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, State Key Laboratory of Radio Frequency Heterogeneous Integration, College of Electronics and Information Engineering, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, Guangdong, 518060, China
| | - Guangxing Liang
- Institute of Thin Film Physics and Applications, Shenzhen Key Laboratory of Advanced Thin Films and Applications, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, State Key Laboratory of Radio Frequency Heterogeneous Integration, College of Electronics and Information Engineering, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, Guangdong, 518060, China
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Yeung CWS, Andrei V, Lee TH, Durrant JR, Reisner E. Organic Semiconductor-BiVO 4 Tandem Devices for Solar-Driven H 2O and CO 2 Splitting. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2404110. [PMID: 38943473 DOI: 10.1002/adma.202404110] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/20/2024] [Revised: 06/17/2024] [Indexed: 07/01/2024]
Abstract
Photoelectrochemical (PEC) devices offer a promising platform toward direct solar light harvesting and chemical storage through artificial photosynthesis. However, most prototypes employ wide bandgap semiconductors, moisture-sensitive inorganic light absorbers, or corrosive electrolytes. Here, the design and assembly of PEC devices based on an organic donor-acceptor bulk heterojunction (BHJ) using a carbon-based encapsulant are introduced, which demonstrate long-term H2 evolution and CO2 reduction in benign aqueous media. Accordingly, PCE10:EH-IDTBR photocathodes display long-term H2 production for 300 h in a near-neutral pH solution, whereas photocathodes with a molecular CO2 reduction catalyst attain a CO:H2 selectivity of 5.41±0.53 under 0.1 sun irradiation. Their early onset potential enables the construction of tandem PCE10:EH-IDTBR - BiVO4 artificial leaves, which couple unassisted syngas production with O2 evolution in a reactor completely powered by sunlight, sustaining a 1:1 ratio of CO to H2 over 96 h of operation.
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Affiliation(s)
- Celine Wing See Yeung
- Yusuf Hamied Department of Chemistry, University of Cambridge, Lensfield Road, Cambridge, CB2 1EW, UK
| | - Virgil Andrei
- Yusuf Hamied Department of Chemistry, University of Cambridge, Lensfield Road, Cambridge, CB2 1EW, UK
- Optoelectronics Group, Cavendish Laboratory, University of Cambridge, JJ Thomson Avenue, Cambridge, CB3 0HE, UK
| | - Tack Ho Lee
- Department of Chemistry and Centre for Processable Electronics, Imperial College London, London, W12 0BZ, UK
- Department of Chemistry Education, Graduate Department of Chemical Materials, Institute for Plastic Information and Energy Materials, Sustainable Utilization of Photovoltaic Energy Research Center, Pusan National University, Busan, 46241, Republic of Korea
| | - James Robert Durrant
- Department of Chemistry and Centre for Processable Electronics, Imperial College London, London, W12 0BZ, UK
| | - Erwin Reisner
- Yusuf Hamied Department of Chemistry, University of Cambridge, Lensfield Road, Cambridge, CB2 1EW, UK
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Chihi A. Gamma-irradiated stibnite thin films set a remarkable benchmark performance for photoelectrochemical water splitting. RSC Adv 2024; 14:12475-12495. [PMID: 38633490 PMCID: PMC11022282 DOI: 10.1039/d4ra01382d] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/22/2024] [Accepted: 04/11/2024] [Indexed: 04/19/2024] Open
Abstract
The study sets out to show the positive impact of sulfur vacancy engineering on the structural, morphological, optical, electrical, and photoelectrochemical (PEC) properties of Sb2S3 films synthesized using the spin coating technique. The produced films were exposed to γ-irradiation with different doses from 0 to 20 kGy. We have demonstrated the formation of sulfur vacancies and loss of oxygen content in the irradiated samples. XRD measurements revealed that all films exhibit a polycrystalline structure, and the crystallite size increases with the rising radiation dose, reaching the highest value of 87.4 nm measured for the Sb2S3 film irradiated with 15 kGy. The surface roughness of the irradiated samples increases with increasing γ-irradiation dose. The increase in surface roughness not only raises the active sites but enhances the conductivity of the Sb2S3 material as well. The wettability properties of the irradiated films were affected by γ-irradiation doses and the sample irradiated with 15 kGy exhibited the lowest hydrophobicity compared to others. The Hall measurements reveal that irradiated samples exhibit p-type semiconductor behavior. The optical band gap decreased progressively from 1.78 eV to 1.60 eV up to the irradiation dose of 15 kGy and slightly increased thereafter. The irradiated sample with 15 kGy showed a maximum photocurrent density of ca. 1.62 mA cm-2 at 0 V vs. reverse hydrogen electrode (RHE) under AM 1.5 G illumination with applied bias photon-to-current efficiency (ABPE) of 0.82% at 0.47 V vs. RHE, suggesting superior PEC water splitting performance compared to other samples. At 0 V vs. RHE and 648 nm, the incident photon current efficiency (IPCE) and absorbed photon current efficiency (APCE) of the photocathode irradiated with 15 kGy are significantly higher than those of the other photocathodes with values of 9.35% and 14.47%, respectively. Finally, Mott-Schottky measurement was also performed on all photocathodes to estimate their acceptor density and flat band potential.
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Affiliation(s)
- Adel Chihi
- Photovoltaic Laboratory, Research and Technology Centre of Energy Borj-Cedria Science, and Technology Park, BP 95 2050 Hammam Lif Tunisia
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Ghasemian MB, Wang Y, Allioux FM, Zavabeti A, Kalantar-Zadeh K. Coating of gallium-based liquid metal particles with molybdenum oxide and oxysulfide for electronic band structure modulation. NANOSCALE 2023; 15:5891-5898. [PMID: 36876581 DOI: 10.1039/d2nr06733a] [Citation(s) in RCA: 5] [Impact Index Per Article: 2.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/18/2023]
Abstract
Liquid metal (LM) droplets are now used in many applications including catalysis, sensing, and flexible electronics. Consequently, the introduction of methods for on-demand alternating electronic properties of LMs is necessary. The active surface of LMs provides a unique environment for spontaneous chemical reactions that enable the formation of thin layers of functional materials for such modulations. Here, we showed the deposition of n-type MoOx and MoOxSy semiconductors on the surface of EGaIn LM droplets under mechanical agitation to successfully modulate their electronic structures. The "liquid solution"-"liquid metal" interaction resulted in the formation of oxide and oxysulfide layers on the surface of LM droplets. The comprehensive study of electronic and optical properties revealed a decrease in the band gap of the droplets after surface decoration with MoOx and MoOxSy, leading to deeper n-type doping of the materials. This method provides a facile procedure for engineering the electronic band structure of LM-based composites when they are necessary for various applications.
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Affiliation(s)
- Mohammad B Ghasemian
- School of Chemical and Biomolecular Engineering, University of Sydney, Sydney, NSW, Australia.
- School of Chemical Engineering, University of New South Wales (UNSW), Sydney, NSW, Australia
| | - Yifang Wang
- School of Chemical Engineering, University of New South Wales (UNSW), Sydney, NSW, Australia
| | - Francois-Marie Allioux
- School of Chemical and Biomolecular Engineering, University of Sydney, Sydney, NSW, Australia.
- School of Chemical Engineering, University of New South Wales (UNSW), Sydney, NSW, Australia
| | - Ali Zavabeti
- Department of Chemical Engineering, The University of Melbourne, Parkville, VIC, Australia
- School of Science, RMIT University, Melbourne, VIC, Australia
| | - Kourosh Kalantar-Zadeh
- School of Chemical and Biomolecular Engineering, University of Sydney, Sydney, NSW, Australia.
- School of Chemical Engineering, University of New South Wales (UNSW), Sydney, NSW, Australia
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