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The Effects of Annealing Temperature on the Structural Properties of ZrB2 Films Deposited via Pulsed DC Magnetron Sputtering. COATINGS 2019. [DOI: 10.3390/coatings9040253] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/16/2022]
Abstract
Zirconium diboride (ZrB2) thin films were deposited on a Si(100) substrate using pulsed direct current (dc) magnetron sputtering and then annealed in high vacuum. In addition, we discussed the effects of the vacuum annealing temperature in the range of 750 to 870 °C with flowing N2 on the physical properties of ZrB2 films. The structural properties of ZrB2 films were investigated with X-ray diffraction (XRD), field emission scanning electron microscopy (FE-SEM), transmission electron microscopy (TEM), atomic force microscopy (AFM), and X-ray photoelectron spectroscopy (XPS). The XRD patterns indicated that the ZrB2 films annealed at various temperatures exhibited a highly preferred orientation along the [0001] direction and that the residual stress could be relaxed by increasing the annealing temperature at 870 °C in a vacuum. The surface morphology was smooth, and the surface roughness slightly decreased with increasing annealing temperature. Cross-sectional TEM images of the ZrB2/Si(100) film annealed at 870 °C reveals the films were highly oriented in the direction of the c-axis of the Si substrate and the film structure was nearly stoichiometric in composition. The XPS results show the film surfaces slightly contain oxygen, which corresponds to the binding energy of Zr–O. Therefore, the obtained ZrB2 film seems to be quite suitable as a buffer layer for III-nitride growth.
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Magnetron Sputter Epitaxy of High-Quality GaN Nanorods on Functional and Cost-Effective Templates/Substrates. ENERGIES 2017. [DOI: 10.3390/en10091322] [Citation(s) in RCA: 6] [Impact Index Per Article: 0.9] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/16/2022]
Abstract
We demonstrate the versatility of magnetron sputter epitaxy by achieving high-quality GaN nanorods on different substrate/template combinations, specifically Si, SiC, TiN/Si, ZrB2/Si, ZrB2/SiC, Mo, and Ti. Growth temperature was optimized on Si, TiN/Si, and ZrB2/Si, resulting in increased nanorod aspect ratio with temperature. All nanorods exhibit high purity and quality, proved by the strong bandedge emission recorded with cathodoluminescence spectroscopy at room temperature as well as transmission electron microscopy. These substrates/templates are affordable compared to many conventional substrates, and the direct deposition onto them eliminates cumbersome post-processing steps in device fabrication. Thus, magnetron sputter epitaxy offers an attractive alternative for simple and affordable fabrication in optoelectronic device technology.
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Carenco S, Portehault D, Boissière C, Mézailles N, Sanchez C. Nanoscaled Metal Borides and Phosphides: Recent Developments and Perspectives. Chem Rev 2013; 113:7981-8065. [DOI: 10.1021/cr400020d] [Citation(s) in RCA: 756] [Impact Index Per Article: 68.7] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/12/2022]
Affiliation(s)
- Sophie Carenco
- Chimie de la Matière Condensée de Paris, UPMC Univ Paris 06, UMR 7574, Collège de France, 11 Place Marcelin Berthelot, 75231 Paris Cedex 05, France
- Chimie de la Matière Condensée de Paris, CNRS, UMR 77574, Collège de France, 11 Place Marcellin Berthelot, 75231 Paris Cedex 05, France
- Chimie de la Matière Condensée de Paris, Collège de France, 11 Place Marcellin Berthelot, 75231 Paris Cedex 05, France
- Laboratory Heteroelements and Coordination, Chemistry Department, Ecole Polytechnique, CNRS-UMR 7653, Palaiseau, France
| | - David Portehault
- Chimie de la Matière Condensée de Paris, UPMC Univ Paris 06, UMR 7574, Collège de France, 11 Place Marcelin Berthelot, 75231 Paris Cedex 05, France
- Chimie de la Matière Condensée de Paris, CNRS, UMR 77574, Collège de France, 11 Place Marcellin Berthelot, 75231 Paris Cedex 05, France
- Chimie de la Matière Condensée de Paris, Collège de France, 11 Place Marcellin Berthelot, 75231 Paris Cedex 05, France
| | - Cédric Boissière
- Chimie de la Matière Condensée de Paris, UPMC Univ Paris 06, UMR 7574, Collège de France, 11 Place Marcelin Berthelot, 75231 Paris Cedex 05, France
- Chimie de la Matière Condensée de Paris, CNRS, UMR 77574, Collège de France, 11 Place Marcellin Berthelot, 75231 Paris Cedex 05, France
- Chimie de la Matière Condensée de Paris, Collège de France, 11 Place Marcellin Berthelot, 75231 Paris Cedex 05, France
| | - Nicolas Mézailles
- Laboratory Heteroelements and Coordination, Chemistry Department, Ecole Polytechnique, CNRS-UMR 7653, Palaiseau, France
| | - Clément Sanchez
- Chimie de la Matière Condensée de Paris, UPMC Univ Paris 06, UMR 7574, Collège de France, 11 Place Marcelin Berthelot, 75231 Paris Cedex 05, France
- Chimie de la Matière Condensée de Paris, CNRS, UMR 77574, Collège de France, 11 Place Marcellin Berthelot, 75231 Paris Cedex 05, France
- Chimie de la Matière Condensée de Paris, Collège de France, 11 Place Marcellin Berthelot, 75231 Paris Cedex 05, France
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Yamada-Takamura Y, Wang ZT, Fujikawa Y, Sakurai T, Xue QK, Tolle J, Liu PL, Chizmeshya AVG, Kouvetakis J, Tsong IST. Surface and interface studies of GaN epitaxy on Si(111) via buffer layers. PHYSICAL REVIEW LETTERS 2005; 95:266105. [PMID: 16486376 DOI: 10.1103/physrevlett.95.266105] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/13/2005] [Indexed: 05/06/2023]
Abstract
Gallium nitride films, epitaxially grown on Si(111) via a lattice-matched ZrB(2) buffer layer by plasma-assisted molecular beam epitaxy, have been studied in situ by noncontact atomic force microscopy and also in real time by reflection high-energy electron diffraction. The grown films were determined to be always N-polar. First-principles theoretical calculations modeling the interface structure between GaN(0001) and ZrB(2)(0001) clarify the origin of the N polarity.
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