A short review of the electrochemical technologies for pit arrays fabricated on the surfaces of indium phosphide wafer

Fabricating a pit array on the surface of indium phosphide wafer can change its photoelectric properties, improve its photoelectric conversion efficiency, and expand its application range. There are few reviews devoted to the fabrication of regular hole arrays on the surface of indium phosphide wafers by electrochemical methods. In this paper, twelve electrochemical approaches for assembling pit arrays on the surface of indium phosphide wafers were introduced, the structure and experimental process of the electrochemical device were highlighted, and the resulting top and section views were also shown by animation. It can provide a useful reference guide for the large-scale fabrication of regular hole arrays on the surface of indium phosphide wafers.

The nanostructure of surfactant-DNA complexes with different arrangements

The nanostructure of DNA with different cationic surfactant has been studied in order to elucidate the detailed arrangement concerning the position of DNA and surfactant domains in the complexes. Also, the orientation of the DNA cylinders in the thin films of the complexes was investigated. Attention was directed on the preparation methods of the complexes and to how the different surfactant structure affects the compaction of the DNA. The cationic surfactant-DNA complexes were investigated by X-ray scattering, polarized light microscopy and elemental microanalysis. It was observed that the molecular organization of the complexes between DNA and cationic surfactant corresponds to a hexagonal structure with different packing arrangements. The nanostructure of the complexes depends on the hydrophobic/hydrophilic balance of the cationic surfactant. In particular the use of arginine derived surfactants, with a large polar head group able to interact not only by electrostatics but also by hydrogen bonding, allows for the formation of more compact structures. The results suggest that the smaller the lattice parameter the more compact and stable is the complex implying slower DNA release.

Hexagonal geometric patterns formed by radial pore growth of InP based on Voronoi tessellation

To fabricate ordered geometric patterns consisting of InP nanoporous structures, a photoresist mask with periodic opening arrays was prepared by sphere photolithography. The diameter and interval of the openings of the photoresist mask could be controlled independently by adjusting the diameter of silica spheres used as a lens and the exposure time. Through this resist mask with a two-dimensional (2D) hexagonal array of openings, the pore growth of InP during anodic etching was investigated. The isolated openings could act as initiation sites for the radial growth of pores, resulting in the formation of hexagonal geometric patterns based on Voronoi tessellation in 2D space. With further anodic etching, inside the substrate, the growth direction of the pores changed from radial to perpendicular relative to the substrate. Moreover, by removing domains consisting of nanopores by anisotropic chemical etching, the fabrication of InP microhole arrays with circular and triangular cross sections was also achieved.

Macroporous Semiconductors

Pores in single crystalline semiconductors come in many forms (e.g., pore sizes from 2 nm to > 10 µm; morphologies from perfect pore crystal to fractal) and exhibit many unique properties directly or as nanocompounds if the pores are filled. The various kinds of pores obtained in semiconductors like Ge, Si, III-V, and II-VI compound semiconductors are systematically reviewed, emphasizing macropores. Essentials of pore formation mechanisms will be discussed, focusing on differences and some open questions but in particular on common properties. Possible applications of porous semiconductors, including for example high explosives, high efficiency electrodes for Li ion batteries, drug delivery systems, solar cells, thermoelectric elements and many novel electronic, optical or sensor devices, will be introduced and discussed.

Formation of uniform and square nanopore arrays on (100) InP surfaces by a two-step etching method

Uniform and square single-crystal InP nanopore arrays have been successfully fabricated on a (100) n-InP surface by a two-step etching method. The characteristic of slow etching rates in four equivalent crystalline (011) facets of (100) n-InP in a mixture of pure HCl and pure H(3)PO(4) has been found, which is the main reason for the formation of square single-crystal InP nanopores. The distribution of nanopores can be closely associated with the distribution of carriers in the semiconductor during the electrochemical etching process. An oscillating behaviour of current has been observed, which can probably be attributed to the oscillations in concentration of the electrolyte at the pore tips caused by diffusion of the electrolyte in the nanopore channels.