Effects of high dose proton irradiation on the electrical performance of ZnO Schottky diodes

NMR Observation of Mobile Protons in Proton-Implanted ZnO Nanorods

The diffusion properties of H(+) in ZnO nanorods are investigated before and after 20 MeV proton beam irradiation by using (1)H nuclear magnetic resonance (NMR) spectroscopy. Herein, we unambiguously observe that the implanted protons occupy thermally unstable site of ZnO, giving rise to a narrow NMR line at 4.1 ppm. The activation barrier of the implanted protons was found to be 0.46 eV by means of the rotating-frame spin-lattice relaxation measurements, apparently being interstitial hydrogens. High-energy beam irradiation also leads to correlated jump diffusion of the surface hydroxyl group of multiple lines at ~1 ppm, implying the presence of structural disorder at the ZnO surface.

As a Whole: Crystalline Zinc Aluminate Nanotube Array−Nanonet

A large-area crystalline zinc aluminate nanotube array on its own nanonet was prepared by thermal replication on an anodized aluminum oxide template and through the gas-solid reaction between Zn vapor, Al2O3, and residual O2 or produced H2O. The free-standing nanotube array plus the nanonet structure, as a whole, was at least 900 mum2 in area. Each nanotube, 70-80 nm in diameter, was seamlessly connected to an underlying pore in the nanonet and was about 800 and 15 nm in length and wall thickness, respectively. The nanonet was about 20 nm thick. Both the ZnAl2O4 nanotube and nanonet were in face-centered cubic crystal form and grew along the [12] direction.