Electron diffraction and resistivity measurements on the one-dimensional orthorhombic and monoclinic structures of TaS3. comparison with NbSe3

Thermodynamics and Kinetics in Anisotropic Growth of One-Dimensional Midentropy Nanoribbons

One-dimensional (1D) materials demonstrate anisotropic in-plane physical properties that enable a wide range of functionalities in electronics, photonics, valleytronics, optoelectronics, and catalysis. Here, we undertake an in-depth study of the growth mechanism for equimolar midentropy alloy of (NbTaTi)_0.33S₃ nanoribbons as a model system for 1D transition metal trichalcogenide structures. To understand the thermodynamic and kinetic effects in the growth process, the energetically preferred phases at different synthesis temperatures and times are investigated, and the phase evolution is inspected at a sequence of growth steps. It is uncovered that the dynamics of the growth process occurs at four different stages via preferential incorporation of chemical species at high-surface-energy facets. Also, a sequence of temperature and time dependent nonuniform to uniform phase evolutions has emerged in the composition and structure of (NbTaTi)_0.33S₃ which is described based on an anisotropic vapor-solid (V-S) mechanism. Furthermore, direct evidence for the 3D structure of the charge density wave (CDW) phase (width less than 100 nm) is provided by three-dimensional electron diffraction (3DED) in individual nanoribbons at cryogenic temperature, and detailed comparisons are made between the phases obtained before and after CDW transformation. This study provides important fundamental information for the design and synthesis of future 1D alloy structures.

Quasi-One-Dimensional Transition-Metal Chalcogenide Semiconductor (Nb4Se15I2)I2

The discovery of new low-dimensional transition-metal chalcogenides is contributing to the already prosperous family of these materials. In this study, needle-shaped single crystals of a quasi-one-dimensional (1D) material, (Nb₄Se₁₅I₂)I₂, were grown by chemical vapor transport, and the structure was solved by single-crystal X-ray diffraction (XRD). The structure has 1D (Nb₄Se₁₅I₂)_n chains along the [101] direction, with two I^- ions per formula unit directly bonded to Nb⁵⁺. The other two I^- ions are loosely coordinated and intercalated between the chains. Individual chains are chiral and stack along the b axis in opposing directions, giving space group P2₁/c. The phase purity and crystal structure were verified by powder XRD. Density functional theory calculations show (Nb₄Se₁₅I₂)I₂ to be a semiconductor with a direct band gap of around 0.6 eV. Resistivity measurements of bulk crystals and micropatterned devices demonstrate that (Nb₄Se₁₅I₂)I₂ has an activation energy of around 0.1 eV, and no anomaly or transition was seen upon cooling. Low-temperature XRD shows that (Nb₄Se₁₅I₂)I₂ does not undergo a structural phase transformation from room temperature to 8.2 K, unlike related compounds (NbSe₄)_nI (n = 2, 3, or 3.33), which all exhibit charge-density waves. This compound represents a well-characterized and valence-precise member of a diverse family of anisotropic transition-metal chalcogenides.

Insulator-to-Superconductor Transition in Quasi-One-Dimensional HfS3 under Pressure

Various transition-metal trichalcogenides (TMTC) show unique electronic properties, such as metal-insulator transition, topological insulator, and even superconducting transition. Currently, almost all metallic TMTC compounds can show superconductivity either at ambient pressure or at high pressure. However, most TMTC compounds are semiconductors and even insulators. Does superconductivity exist in any non-metallic TMTC compound by artificial manipulation? In this work, the electronic behavior of highly insulating HfS₃ has been manipulated in terms of pressure. HfS₃ undergoes an insulator-to-semiconductor transition near 17 GPa with a band gap reduction of ∼1 eV. Optical absorption, Raman spectroscopy, and X-ray diffraction measurements provide consistent results, suggesting the structural origin of the electronic transition. Upon further compression, HfS₃ becomes a superconductor without further structural transition. The superconducting transition occurs as early as 50.6 GPa, and the T_c reaches 8.1 K at 121 GPa, which sets a new record for TMTCs. This work reveals that all TMTCs may be superconductors and opens a new avenue to explore the abundant emergent phenomena in the TMTC material family.

Basic aspects of the charge density wave instability of transition metal trichalcogenides NbSe3and monoclinic-TaS3

NbSe₃and monoclinic-TaS₃(m-TaS₃) are quasi-1D metals containing three different types of chains and undergoing two different charge density wave Peierls transitions atTP1andTP2associated with type III and type I chains, respectively. The nature of these transitions is discussed on the basis of first-principles DFT calculation of their Fermi surface (FS) and electron-hole response function. Because of the stronger inter-chain interactions, the FS and electron-hole response function are considerably more complex for NbSe₃thanm-TaS₃; however a common scenario can be put forward to rationalize the results. The intra-chain inter-band nesting processes dominate the strongest response for both type I and type III chains of the two compounds. Two well-defined maxima of the electron-hole response for NbSe₃are found with the (0a^*, 0c^*) and (1/2a^*, 1/2c^*) transverse components atTP1andTP2, respectively, whereas the second maximum is not observed form-TaS₃atTP2. Analysis of the different inter-chain coupling mechanisms leads to the conclusion that FS nesting effects are only relevant to set the transversea^*components in NbSe₃. The strongest inter-chain Coulomb coupling mechanism must be taken into account for the transverse coupling alongc^*in NbSe₃and along botha^*andc^*form-TaS₃. Phonon spectrum calculations reveal the formation of a giant 2k_FKohn anomaly form-TaS₃. All these results support a weak coupling scenario for the Peierls transition of transition metal trichalcogenides.

Anisotropic quasi-one-dimensional layered transition-metal trichalcogenides: synthesis, properties and applications

The strong in-plane anisotropy and quasi-1D electronic structures of transition-metal trichalcogenides (MX3; M = group IV or V transition metal; X = S, Se, or Te) have pronounced influence on moulding the properties of MX3 materials. In particular, the infinite trigonal MX6 prismatic chains running parallel to the b-axis are responsible for the manifestation of anisotropy in these materials. Several marvellous properties, such as inherent electronic, optical, electrical, magnetic, superconductivity, and charge density wave (CDW) transport properties, make transition-metal trichalcogenides (TMTCs) stand out from other 2D materials in the fields of nanoscience and materials science. In addition, with the assistance of pressure, temperature, and tensile strain, these materials and their exceptional properties can be tuned to a superior extent. The robust anisotropy and incommensurable properties make the MX3 family fit for accomplishing quite a lot of compelling applications in the areas of field effect transistors (FETs), solar and fuel cells, lithium-ion batteries, thermoelectricity, etc. In this review article, a precise audit of the distinctive crystal structures, static and dynamic properties, efficacious synthesis schemes, and enthralling applications of quasi-1D MX3 materials is made.

Fast and controlled growth of two-dimensional layered ZrTe3 nanoribbons by chemical vapor deposition

We first demonstrated ZrTe₃ nanoribbons can be grown directly by chemical vapor deposition method, which exhibit intriguing magnetic properties.

TaS3 Nanofibers: Layered Trichalcogenide for High-Performance Electronic and Sensing Devices

Layered materials, like transition metal dichalcogenides, exhibit broad spectra with outstanding properties with huge application potential, whereas another group of related materials, layered transition metal trichalcogenides, remains unexplored. Here, we show the broad application potential of this interesting structural type of layered tantalum trisulfide prepared in a form of nanofibers. This material shows tailorable attractive electronic properties dependent on the tensile strain applied to it. Structure of this so-called orthorhombic phase of TaS₃ grown in a form of long nanofibers has been solved and refined. Taking advantage of these capabilities, we demonstrate a highly specific impedimetric NO gas sensor based on TaS₃ nanofibers as well as construction of photodetectors with excellent responsivity and field-effect transistors. Various flexible substrates were used for the construction of a NO gas sensor. Such a device exhibits a low limit of detection of 0.48 ppb, well under the allowed value set by environmental agencies for NO_x (50 ppb). Moreover, this NO gas sensor also showed excellent selectivity in the presence of common interferences formed during fuel combustion. TaS₃ nanofibers produced in large scale exhibited excellent broad application potential for various types of devices covering nanoelectronic, optoelectronic, and gas-sensing applications.

Charge density waves in individual nanoribbons of orthorhombic-TaS3

Electrical transport and noise measurements of individual orthorhombic-TaS₃ nanoribbons allow for examination of surface confinement effects on charge density waves.